JP2005524000A5 - - Google Patents
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- JP2005524000A5 JP2005524000A5 JP2003588004A JP2003588004A JP2005524000A5 JP 2005524000 A5 JP2005524000 A5 JP 2005524000A5 JP 2003588004 A JP2003588004 A JP 2003588004A JP 2003588004 A JP2003588004 A JP 2003588004A JP 2005524000 A5 JP2005524000 A5 JP 2005524000A5
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- nanotubes
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- nanotube
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Claims (82)
- 基板を提供することと、
基板の表面に予備形成されたナノチューブを塗布し、カーボンナノチューブの不織布を作成することと、
不織布の部分を定められたパターンに従って選択的に除去し、製品を作成することと、
を備えることを特徴とする製品を製造する方法。 - 基板の表面に対する予備形成したナノチューブの接着を促進するために表面を機能化することを含むことを特徴とする請求項1に記載の方法。
- 表面を機能化する行為が表面状態を化学的に変換するために表面を誘導体化することを含むことを特徴とする請求項1に記載の方法。
- 炭素及び他の不純物を除去するために表面を酸化することをさらに含む請求項2の方法。
- 表面がシランと反応させられることを特徴とする請求項1に記載の方法。
- 表面が3−アミノプロピルトリエトキシシラン(APTS)にさらされることを特徴とする請求項1に記載の方法。
- 表面がAPTSの約1から50モル溶液にさらされることを特徴とする請求項6に記載の方法。
- 表面がAPTSの約13から28モル溶液にさらされることを特徴とする請求項6に記載の方法。
- APTSの溶液がヘキサンを含むことを特徴とする請求項8に記載の方法。
- 基板が所定の時間APTSの溶液に浸漬されることを特徴とする請求項7に記載の方法。
- シランが実質的に単分子層として表面に付着されることを特徴とする請求項5に記載の方法。
- 基板が予備形成されたナノチューブの塗布の前にヘキサンの中で保管されることを特徴とする請求項9に記載の方法。
- 表面へのナノチューブの塗布が、予備形成されたナノチューブを分散するために基板を回転することを含むことを特徴とする請求項1に記載の方法。
- 予備形成されたナノチューブがレーザアブレーションされたナノチューブであることを特徴とする請求項1に記載の方法。
- 予備形成されたナノチューブが高圧一酸化炭素分解ナノチューブであることを特徴とする請求項1に記載の方法。
- 予備形成されたナノチューブが単壁ナノチューブであることを特徴とする請求項1に記載の方法。
- 予備形成されたナノチューブが多壁ナノチューブであることを特徴とする請求項1に記載の方法。
- ナノチューブが約100から500μg/mLという濃度で溶媒と混合されることを特徴とする請求項14に記載の方法。
- 溶媒が1,2ジクロロベンジンであることを特徴とする請求項18に記載の方法。
- 溶媒の中のナノチューブが分散させられることを特徴とする請求項18に記載の方法。
- ナノチューブの溶液及び溶媒が超音波処理にさらされることを特徴とする請求項20に記載の方法。
- ナノチューブが約10から200μg/mLという濃度で溶媒と混合されることを特徴とする請求項15に記載の方法。
- 溶媒が1,2ジクロロベンジンであることを特徴とする請求項22に記載の方法。
- 溶媒中のナノチューブが分散させられることを特徴とする請求項22に記載の方法。
- ナノチューブの溶液と溶媒が超音波処理にさらされることを特徴とする請求項24に記載の方法。
- 基板が、ナノチューブを含む溶液が基板に付着されるにつれて所定の速度で回転させられ、表面が所定の期間回転し続けることを特徴とする請求項13に記載の方法。
- 所定の速度が約1000rpmであり、定められた期間が約30秒であることを特徴とする請求項26に記載の方法。
- 基板がナノチューブの塗布に続いて乾燥されることを特徴とする請求項26に記載の方法。
- 基板が以後の回転動作により乾燥されることを特徴とする請求項28に記載の方法。
- ナノチューブの塗布が、予備形成されたナノチューブの溶液の複数のスピンコート動作により達成されることを特徴とする請求項13に記載の方法。
- スピンコート動作の間で基板が溶媒から乾燥されることを特徴とする請求項30に記載の方法。
- ナノチューブを塗布すると、約1から1000kΩ/□という抵抗により特徴付けられる不織布を生じさせるために十分なナノチューブの密度が生じることを特徴とする請求項1に記載の方法。
- 不織布付きの基板が焼きなまされることを特徴とする請求項1に記載の方法。
- 不織布のカーボンナノチューブが金属性ナノチューブ及び半導体ナノチューブを含み、ファブリック内での金属性ナノチューブと半導体ナノチューブの相対的な組成が制御されることを特徴とする請求項1に記載の方法。
- 不織布のカーボンナノチューブが金属性のナノチューブと半導体ナノチューブを含み、方法が金属性ナノチューブを選択的に除去することをさらに含むことを特徴とする請求項1に記載の方法。
- 不織布のカーボンナノチューブが金属性ナノチューブと半導体ナノチューブを含み、方法が半導体ナノチューブを選択的に除去することをさらに含む請求項1に記載の方法。
- 選択的に金属性のナノチューブを除去した後に、予備形成されたナノチューブの以後の塗布が行われることを特徴とする請求項35に記載の方法。
- 選択的に半導体ナノチューブを除去した後に、予備形成されたナノチューブの以後の塗布が行われることを特徴とする請求項36に記載の方法。
- 不織布が基板の表面を覆い、実質的に一様な密度となることを特徴とする請求項1に記載の方法。
- 不織布が、基板の表面を覆い、厚さが約2nm以下になるように作られることを特徴とする請求項1に記載の方法。
- ウェハ基板を提供することと、
ウェハ基板の表面に予備形成されたナノチューブを塗布し、接触しているカーボンナノチューブの不織布を作成し、不織布が実質的に一様な密度であることと、
を備えることを特徴するウェハ基板に対してナノチューブの不織布を作る方法。 - ファブリックがおもにナノチューブの単分子層であることを特徴とする請求項41に記載の方法。
- ファブリックの厚さが約2nm以下であることを特徴とする請求項41に記載の方法。
- 予備形成されたナノチューブが単壁ナノチューブであることを特徴とする請求項41に記載の方法。
- 予備形成されたナノチューブのウェハ基板の表面への接着を促進するために表面を機能化することを特徴とする請求項41に記載の方法。
- 表面を機能化する行為が表面状態を化学的に変換するために表面を誘導体化することを含むことを特徴とする請求項43に記載の方法。
- 炭素及び他の不純物を除去するために表面を酸化することをさらに含む請求項43に記載の方法。
- 表面がシランと反応させられることを特徴とする請求項41に記載の方法。
- 表面が3−アミノプロピルトリエトキシシラン(APTS)にさらされることを特徴とする請求項41に記載の方法。
- 表面がAPTSの約1から50モルの溶液にさらされることを特徴とする請求項47に記載の方法。
- 表面がAPTSの約13から28モルの溶液にさらされることを特徴とする請求項47に記載の方法。
- APTSの溶液がヘキサンを含むことを特徴とする請求項49に記載の方法。
- 基板が所定の時間APTSの溶液の中に浸漬されることを特徴とする請求項48に記載の方法。
- シランが実質的に単分子層として表面上に付着されることを特徴とする請求項46に記載の方法。
- 基板に塗布される予備形成されたナノチューブが半導体ナノチューブを基準にして金属性ナノチューブの制御された組成を有することを特徴とする請求項41に記載の方法。
- ナノチューブの表面への塗布が予備形成されたナノチューブを分散するために基板を回転することを含む請求項41に記載の方法。
- 予備形成されたナノチューブがレーザアブレーションされたナノチューブであることを特徴とする請求項41に記載の方法。
- 予備形成されたナノチューブが高圧一酸化分解ナノチューブであることを特徴とする請求項41に記載の方法。
- 予備形成されたナノチューブがカーボン単壁ナノチューブであることを特徴とする請求項41に記載の方法。
- 事前に形成されたナノチューブが多壁ナノチューブであることを特徴とする請求項41に記載の方法。
- ナノチューブが約100から500μg/mLという濃度で溶媒と混合されることを特徴とする請求項55に記載の方法。
- 溶媒が1,2ジクロロベンジンであることを特徴とする請求項59に記載の方法。
- 溶媒中のナノチューブが分散させられることを特徴とする請求項59に記載の方法。
- ナノチューブの溶液と溶媒が超音波処理にさらされることを特徴とする請求項61に記載の方法。
- ナノチューブが約10から200μg/mlの濃度で溶媒と混合されることを特徴とする請求項56に記載の方法。
- 溶媒が1,2ジクロロベンジンであることを特徴とする請求項63に記載の方法。
- 溶媒中のナノチューブが分散させられることを特徴とする請求項63に記載の方法。
- ナノチューブの溶液及び溶媒が超音波処理にさらされることを特徴とする請求項65に記載の方法。
- ナノチューブを含む溶液が表面に付着されるにつれて基板が溶液として所定の速度で回転され、表面が所定の期間回転し続けることを特徴とする請求項54に記載の方法。
- 所定の速度が約1000rpmであり、所定期間が約30秒であることを特徴とする請求項67に記載の方法。
- 基板がナノチューブの塗布に続いて乾燥されることを特徴とする請求項67に記載の方法。
- 基板が以後の回転動作により乾燥されることを特徴とする請求項69に記載の方法。
- ナノチューブの塗布が、予備形成されたナノチューブの溶液の複数のスピンコート動作によって達成されることを特徴とする請求項54に記載の方法。
- スピンコート動作の間で基板が溶液から乾燥されることを特徴とする請求項71に記載の方法。
- ナノチューブの塗布が約1から1000kΩ/□という抵抗により特徴付けられる不織布を生じさせるほどナノチューブの十分な密度を生じさせることを特徴とする請求項41に記載の方法。
- 不織布を備える基板が焼きなまされることを特徴とする請求項41に記載の方法。
- 不織布のカーボンナノチューブが金属性のナノチューブと半導体ナノチューブを含み、ファブリックの中の金属性のナノチューブと半導体ナノチューブの相対的な組成が制御されることを特徴とする請求項41に記載の方法。
- 不織布のカーボンナノチューブが金属性のナノチューブと半導体ナノチューブを含み、方法が金属性のナノチューブを選択的に除去することをさらに含むことを特徴とする請求項41に記載の方法。
- 不織布のカーボンナノチューブが金属性のナノチューブと半導体のナノチューブを含み、方法が半導体ナノチューブを選択的に除去することをさらに含むことを特徴とする請求項41に記載の方法。
- 金属性のナノチューブを選択的に除去したのに続き、予備形成されたナノチューブの以後の塗布が行われることを特徴とする請求項78に記載の方法。
- 半導体ナノチューブを選択的に除去したのに続き、予備形成されたナノチューブの以後の塗布が行われることを特徴とする請求項79に記載の方法。
- 基板に塗布される予備形成されたナノチューブが、半導体ナノチューブを基準にして金属性のナノチューブの制御された組成を有することを特徴とする請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/128,118 | 2002-04-23 | ||
US10/128,118 US6706402B2 (en) | 2001-07-25 | 2002-04-23 | Nanotube films and articles |
PCT/US2003/000991 WO2003091486A1 (en) | 2002-04-23 | 2003-01-13 | Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005524000A JP2005524000A (ja) | 2005-08-11 |
JP2005524000A5 true JP2005524000A5 (ja) | 2006-03-02 |
JP5878679B2 JP5878679B2 (ja) | 2016-03-08 |
Family
ID=29215412
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003588004A Expired - Lifetime JP5878679B2 (ja) | 2002-04-23 | 2003-01-13 | 基板製品を製造する方法 |
Country Status (8)
Country | Link |
---|---|
US (5) | US6706402B2 (ja) |
EP (2) | EP1677373A3 (ja) |
JP (1) | JP5878679B2 (ja) |
KR (1) | KR100956832B1 (ja) |
AU (1) | AU2003214832A1 (ja) |
CA (1) | CA2483009A1 (ja) |
TW (1) | TWI298709B (ja) |
WO (1) | WO2003091486A1 (ja) |
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2002
- 2002-04-23 US US10/128,118 patent/US6706402B2/en not_active Expired - Lifetime
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2003
- 2003-01-10 TW TW092100449A patent/TWI298709B/zh not_active IP Right Cessation
- 2003-01-13 AU AU2003214832A patent/AU2003214832A1/en not_active Abandoned
- 2003-01-13 KR KR1020047016888A patent/KR100956832B1/ko active IP Right Grant
- 2003-01-13 JP JP2003588004A patent/JP5878679B2/ja not_active Expired - Lifetime
- 2003-01-13 WO PCT/US2003/000991 patent/WO2003091486A1/en active Application Filing
- 2003-01-13 EP EP06008240A patent/EP1677373A3/en not_active Withdrawn
- 2003-01-13 EP EP03710664A patent/EP1497485A4/en not_active Withdrawn
- 2003-01-13 CA CA002483009A patent/CA2483009A1/en not_active Abandoned
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2004
- 2004-02-09 US US10/774,682 patent/US7745810B2/en not_active Expired - Fee Related
- 2004-02-11 US US10/776,573 patent/US6942921B2/en not_active Expired - Lifetime
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2005
- 2005-04-21 US US11/111,582 patent/US20050191495A1/en not_active Abandoned
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2016
- 2016-01-25 US US15/005,091 patent/US10096363B2/en not_active Expired - Fee Related
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