JP2005524000A - カーボンナノチューブ膜、層、ファブリック、リボン、素子及び製品を製造するために予備成形ナノチューブを使用する方法 - Google Patents
カーボンナノチューブ膜、層、ファブリック、リボン、素子及び製品を製造するために予備成形ナノチューブを使用する方法 Download PDFInfo
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Images
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Abstract
Description
ナノファブリックの生長
はじめに
カーボンナノチューブは、その表面に特定の金属性の層または酸化被膜を含む基板上で生長させることができる。金属性の層または酸化被膜は、金属を含有するナノ粒子を基板表面に塗布できるようにする。例示的なナノ粒子は鉄、コバルト、ニッケル、タングステン、モリブデン、レニウム、及び他の遷移金属などの金属、または金属酸化物を含む。これらの方法における金属または金属酸化物ははカーボンナノチューブの生長触媒として働く。
ナノファブリックを生長させる1つの好ましい方法は、基板表面に金属触媒の薄い層を有する基板とともにCVD技法を使用する。薄い層は、以後の工程段階で触媒を容易に除去できるようにする。より厚い触媒層はさらに難しい工程段階を必要とする場合がある。
アルミニウム、鉄及びモリブデンの薄い金属層(それぞれ15nm、1nm及び2nm)は、連続して基板上に付着される。基板は、温度が500℃まで高められる環状炉の中に設置され、空気の環境に30分間保持される。それから、温度は、100:400sccm AR:H2のアルゴンガスと水素ガスの流れの中で850℃のCVD温度まで高められる。CVD温度に達すると、500sccmという流量のメタンガスが、約1分間の生長時間の間炉の中に入れられる。CVDを完了すると、炉はアルゴン大気中で200℃未満まで下げられる。図1Cはこの手順から作られるファブリックの顕微鏡写真である。
メタンの代わりにエチレンが5.0sccmの流量で約10分間使用され、CVD温度が800℃である点を除き、例1のすべてのパラメータが再現される。同じ種類の金属層が利用される。しかしながら、使用される金属層の厚さは、アルミニウム5nm、鉄1nm、及びモリブデン2nmである。図1Dは、エチレンのこのような使用から生じるナノチューブの生長の顕微鏡写真である。
例3から6は、メタンガスの流れの速度が、典型的なCVD方法でのナノチューブファブリックの製造に影響を及ぼすことを示している。顕微鏡写真から、ガス流量の725sccmから500sccmへ、250scmへの変化が生長の量にどのように影響を及ぼすのかが分かる。これらの例は、生長したナノチューブの多孔性と種類が、生長プロセスにおける特定のパラメータを変更することにより制御されてよいことを示している。ナノチューブの生長はこの範囲で抑制され、おもに多層ファブリック(750sccm)からおもに単分子層のファブリック(250sccm)までを生成するために細かく制御できる。ガス流れのさらに低いレベルへの還元も、おもに単分子層のファブリックを保証するために可能である。濃度の上昇により、多層のファブリックの生長も可能になるであろう。生長時間と温度などの他のパラメータは、ファブリックの特性にさらに多くの制御を与えるために供給原料のガスの流れにあわせて制御できる。
例5:メタンガス流量が250sccmである点を除き、すべてのパラメータは例3と同じに保たれる。図1Gは、この手順から生じた膜の顕微鏡写真である。
例6:メタンガス流量が100sccmである点を除き、すべてのパラメータは例3と同じに保たれる。図1Hは、この手順から生じた膜の顕微鏡写真である。
例7から9は、他のすべての変数を一定に保つ一方で、使用されているエチレンガスの流量が連続CVDプロセスで減少するという点で例3から6に酷似している。前述のように、これらの例のすべては、生長密度、ナノチューブ多孔性、ナノチューブ長、及び1平方あたり抵抗値に対して細かな制御が達成できることを示している(1平方あたり抵抗は、ナノチューブの多孔性及び/またはそれらの全体的な導電品質を一般的に評価するために使用される)。例えば図7から図9は、それぞれ、ガス流量の減少に対応するファブリックを示している。流量が減少するにつれて、ファブリック密度は減少し、抵抗は高まる。
例10から12は、他のすべてのパラメータを一定に保つ一方でCVD温度を削減する影響を示す。CVD方法は、それ以外の場合例1とほぼ同じである。これらの例は、ナノファブリック及びナノチューブの多孔性、厚さ及び長さで細かな制御が達成されてよいことも示す。それぞれ例10から12の図は、減少するCVD温度に対応するファブリックを示している。温度が減少するにつれて、ファブリック密度は減少し、抵抗が高まる。
例12:CVD温度が800℃に減少される点を除き、すべてのパラメータは例10と同じに保たれる。図1Nは、この手順から生じた膜の顕微鏡写真である。
例えば図13から16は、それぞれ減少するCVD実行時間に対応するファブリックを示している。実行時間が減少するにつれて、ファブリック密度は減少し、抵抗は高まる。
例14:CVD実行時間が5分に減少される点を除き、すべてのパラメータは例13と同じに保たれる。図1Pは、この手順から生じた膜の顕微鏡写真である。
例15:CVD実行時間が2分に減少される点を除き、すべてのパラメータは例13と同じに保たれる。図1Qは、この手順から生じた膜の顕微鏡写真である。
例16:CVD実行時間が1分に減少される点を除き、すべてのパラメータは例13と同じに保たれる。図1Rは、この手順から生じた膜の顕微鏡写真である。
例17から20は、アルミニウム金属層の厚さを変えることが、結果として生じる膜に与える影響を示す。前記のように、これらの例のすべては、生長密度、ナノチューブ多孔性、ナノチューブ長さ、及び1平方あたりの抵抗値に対して細かな制御が達成されてよいことを示している。例えば図17から20は、それぞれ、金属層触媒の減少する厚さに対応するファブリックを示している。厚さが減少するに従って、ファブリック密度が減少し、抵抗が高まる。
例21から22は、薄い金属層の厚さを改変し、基板としてニ酸化珪素を使用した結果を示している。金属層の厚さを改変すると、多孔性、特にナノチューブの種類の調整が可能になる。それらはナノチューブ生長の高温で気化されるため、薄い層ほどSWNTをよく生長させ、残留金属が少なくなるが、厚い層ほど生長するMWNTに対してより導電性である。例えば図21から22は、それぞれ金属層触媒の減少する厚さに対応するファブリックを示している。厚さが減少するにつれて、ファブリック密度は減少し、抵抗が高まる。
例23と24は、シリコン基板とニ酸化珪素基板上でCVDにより生長される膜を示す。これらの例は異なる基板上での多孔性に対する制御も示している。ここでは、半導体基板と絶縁基板の例を有する。生長は、典型的な半導体プロセスフローへの容易な統合、及び製造の容易さを可能にする多岐に渡る基板層で達成可能である。例えば図23と24は、基板の種類に伴なうファブリック密度変化を示し、このようにして抵抗は変化する。
ナノ粒子を含むナノファブリックの生長
ナノファブリックを生長させる別の好ましい方法は、カーボンナノチューブ生長触媒として金属性ナノ粒子または金属酸化物ナノ粒子(例えば酸化鉄)を使用する。金属性ナノ粒子または金属酸化物ナノ粒子は狭い範囲の直径を有する。この狭い範囲が最終的なナノファブリックを形成するナノチューブの直径と種類に対するより効果的な制御につながる。使用される基板の表面は触媒粒子のよりよい接着を促進するためにさらに疎水性の環境またはさらに親水性の環境を生じさせるために誘導体化できる。基板の性質が、単分子層ナノチューブファブリックを生成するほど十分な精度までナノ粒子の分散のレベルに対する制御を可能にする。
これは、金属−配位子先駆物質分子を使用するナノ粒子の例である。HMDS(ヘキサメチルジシラン)は、接着層として1分間4000rpmでニ酸化珪素基板上に回転される。鉄ナノ粒子は1:3.3Fe:ラウリン酸という比率でメタノールの中でラウリン酸の溶液内のFe(NO3)3を溶解することにより作られる。硝酸塩溶液は硝酸及び溶媒を噴出させるために排出される。次に乾燥した鉄ナノ粒子が10mLトルエンと10mLイソプロパノールに添加され、溶液中でナノ粒子を再懸濁する。Feナノ粒子溶液は次にイソプロパノールの中で1:25で希釈される。それから、イソプロパノールの中の1:25の鉄ナノ粒子溶液中の鉄ナノ粒子が30秒間1000rpmで、次に20秒間4000rpmで高速回転することによりウェハの上に付着される。2回のFeナノ粒子の塗布が付着され、回転される。基板は溶媒を除去するために100℃で焼かれ、次にO2プラズマの中で30分間灰化され、メタンの500sccm流量で10分間850℃で、及びAr:H2の100:400sccm流量でCVDが実行される。図3Dはこの手順から生じたナノファブリックの顕微鏡写真である。この実施形態におけるナノファブリックは金属に結合される(フェリチンのタンパク性のシェルに類似する)有機配位子を変更することにより特定のサイズに調整できる。さらに、さまざまな金属または金属酸化物の種のナノ粒子が溶液中でいっしょに混合され、例えば50%のFeと50%のCO、または33%のFe、33%のCo及び33%のAl、あるいは他の適切な組み合わせで触媒として使用するために塗布されてよい。
これは、二酸化珪素基板上に分散され、表面上にスピンコートされない溶液中の鉄ナノ粒子の例である。触媒が表面上に分散された後、基板は5分間放置され、覆われ、溶媒を除去するために100℃で焼かれ、灰化される。CVDは500sccm流量のメタンと100:400sccm流量のAr:H2の中で10分間850℃で実行される。図3Eはこの手順から生じたナノファブリックの顕微鏡写真である。
例27は表面上でのフェリチンによる基板からのカーボンナノチューブの生成を示している。プロセスは触媒先駆物質としてフェリチンを使用することを必要とする。純水中のフェリチンの1:10の混合物がウェハのシリカ表面に塗布される。ウェハは乾燥し、基板の表面上にフェリチンの分散されたコーティングを残す。基板は、すべての非鉄、有機物質を除去するために酸化され、炉の中に置かれる。炉はAr:H2で10分間700℃まで高められ、次にそれはAr:H2で7分間800℃まで高められる。CVDは600:400sccm Ar:H2で40分間、10sccm流量のエチレンを用いて800℃で実行される。図3Eは触媒先駆物質としてフェリチンを使用するカーボンナノチューブ生長のFESEM顕微鏡写真を示している。
ナノファブリックを生長させる別の好ましい方法は、基板表面上の薄い金属層とともにナノ粒子を使用する。該方法により、人はナノチューブを生長させるプロセスを補助する上で薄い層の付着とそれらの特性を利用する一方で、触媒粒子を容易に分散できる。アルミニウムとモリブデンがナノチューブを生長させる表面炭素先駆物質を生成する上で有効であることを思い出すこと。
はじめに
ナノファブリックを形成する1つの好ましい方法は、予め形成されたナノチューブとともにスピンコート技法を使用する。ナノチューブは電子的要素として使用される場合にはナノチューブは無定形炭素から十分に解放されていなければならない。他の優位点の中で、この技法は、それが標準的なCMOS工程または半導体製造方法の熱的な予算に貢献しない室温のプロセスを使用するため、CVDによるナノチューブの生長以上に半導体製造環境に役立つ。さらに、ナノチューブのこの統合の全体的なコストは非常に安価である。
図5Bは、機能化されたカーボンナノチューブ生長基板表面52上でナノチューブのファブリックを作る方法を示している。基板表面52は表面を機能化することによりスピンコードに備えられてよい。具体的には、ウェハ/基板表面の機能化は基板の表面の誘導体化を必要とする。例えば、人は親水性状態から疎水性状態へ化学的に変換できる、あるいはアミン、カルボン酸、チオールまたはスルボン酸塩などの官能基を提供し、基盤の表面特性を改変できるであろう。機能化は基板表面から炭素または他の不純物を取り除くため、及び次にシランと反応される、一律に反応が速い酸化した表面を提供するために酸素プラズマ内で基板を酸化するあるいは灰化するオプションの一次ステップ510を含んでよい。使用されてよい1つのこのようなポリマーは3−アミノプロピルトリエトキシシラン(APTS)である。基板表面52はナノチューブの結合を改善するためのナノチューブ懸濁液の塗布の前に誘導体化されてよい520。発明者は、反応の早いシランがこのような表面の機能化で使用できると予想する。特定の非限定的な実施形態においては、基板表面52は、灰化にさらされるかどうかに関係なく、ヘキサンなどの適切な有機溶媒の中で約1から50ミリモルのAPTSであるが、さらに好ましくはヘキサンの中の13から28ミリモルのAPTSの溶液にさらされ、その結果APTSのだいたい単分子層が基板表面上に付着される。APTSのこのような単分子層を形成するために、基板は通常30分間APTS溶液に浸漬される。いったん表面52がスピンコートのために準備されると、カーボンナノチューブが表面530上で分散され、表面はナノチューブを分散するために高速回転にさらされ、ナノチューブファブリック(例えば図5Aのファブリック54)を形成する。基板は次に(要すれば)焼きなまされる540。
適切に分散されたナノチューブはスピンコートによって基板表面上に塗布されてよい530。このような表面は、保管後、または表面の機能化などの基板準備ステップの後に残る残留物から相対的に解放されていなければならない。ヘキサンなどの溶媒が基板の表面に存在する場合には、それは例えば1分間110℃から115℃で焼くことによって除去されてよい。保管溶媒の除去後、ナノチューブは基板表面上に回転される。
非機能化基板表面はスピンコートによってナノチューブを塗布されてよい。表面は、表面不純物を除去するために、例えば酸素プラズマの中での灰化によって酸化されてよい、あるいはそれはコーティングされず、酸化されない可能性がある。使用されるナノチューブは、レーザアブレーションされたSWNTまたはHiPco(登録商標)ナノチューブであってよいがそれがすべてではない。
ウェハ基板は最初に酸素プラズマの中で15分間灰化される。灰化の後、基板は、30から60μLのAPTS対10mLのヘキサンという比率で、3−アミノプロピルトリエトキシシラン(APTS)、機能化剤、及びヘキサンの溶液中に30分間浸される。表面機能化ステップの間、ナノチューブ溶液が準備される。HiPcoTMSWNTは1mgのナノチューブと50mlの1,2ジクロロベンジンを備える溶液中で混合される。ナノチューブ溶液は、次に1時間超音波をあてて分解され、溶媒溶液中でナノチューブを適切に分散する。ナノチューブ付着の前、基板はヘキサン浴から取り除かれ、溶媒残留物を除去するために1分間100℃から115℃で焼かれる。ナノチューブは焼かれた後、ナノチューブを分散するために30秒間1000rpmでウェハ上に回転され、次にウェハを乾燥させるために4000rpmで回転される。4回のこのようなSWNTスピンコードがウェハに塗布される。回転後、ウェハは残りの溶媒を除去するために100℃から115度で再び焼かれる。
10mgのレーザアブレーションされたナノチューブが100mLの1,2ジクロロベンジンの中で混合され、ウェハ表面に回転される点を除き、すべてのパラメータは例28と同じに保たれる。100から400kWという1平方あたり抵抗測定値が測定された。図5Eは機能化された表面とともに回転されたレーザアブレーション済みのSWNTのFESSEM画像を表示する。無定形炭素を含有するいくつかの粒子も観測される。
スピンコートに使用される基板に段がつけられた、つまり水平に平面的ではない点を除き、すべてのパラメータは例29と同じに保たれる。図5Fはこの方法に従って基板の上に回転されるナノファブリックの顕微鏡写真を表示する。該顕微鏡写真は、ナノチューブがファンデルワールス引力によって基板表面に適合することを示している。発明者は、等角ナノファブリックが水平ではない電気機械スイッチ、特に垂直電気機械スイッチの製造で、あるいは相互接続、アクチュエータ、中継器、センサ及び他の電子的な要素として有用であってよい。
カーボンナノチューブは、以下のように機能化されていない表面に付着される。ウェハ表面は1分間灰化される。ナノチューブ溶液が付着され、前記例28に提示されるようなウェハ上で回転される。ナノチューブ混合物の8回の塗布がウェハ表面に塗布され、50から100kΩの範囲となるナノチューブファブリックの変化する断面での1平方あたり抵抗測定値を生じさせる。図5Gは、多層ナノファブリックを生成するために十分な塗布で機能化されていないウェハ表面の上に回転されるSWNTのFESEM画像を表示する。図5Hは、図示されている約130nmという幅の前もって作られた金属電極を有する基板の上に回転される単分子層ファブリックのFESEM顕微鏡写真を表示する。
そこから製品を作成するためにはナノファブリックを作成するための新しい、改善された方法が使用されてよい。前記に識別され、添付された米国特許出願はこのようなファブリックと製品の特定(であるが、限定的ではない)用途を説明している。例えば、ファブリックの部分を選択的に除去するための多様なマスキング及びパターン化の技法がこれらの出願で説明されているが、ここでは簡潔さのために繰り返さない。さらに、多様な構成部品アーキテクチャは添付された出願で説明されているが、ここでは簡略さのために繰り返さない。
中間構造800が設けられる。構造800は、(例えば、ドーピングされた半導体または金属などの十分に導電性の材料から作られる)電極820がすでに画定され、その上に犠牲材料が画定される(前述したものに類似する)基板810を備える。ナノファブリック840は基板表面及び犠牲層830を覆う。ナノファブリックは前述した方法のどれかによって作られてよい。前述したものと同様に、及び添付参考文献に説明されるように、ナノファブリック840はパターン化されてよく(例えばリトグラフィックパターン化など)、ナノファブリックの画定部分は中間構造850を形成するために除去されてよい。次にパターン化されたナノファブリック製品860は、同様に電極820を覆う画定された犠牲材料830を覆う。次に犠牲材料830は、選択エッチングによって除去され、残りの構造を実質的に無傷のままとし、構造870を生じさせる。構造870は、電極820から分離される吊り下げられナノファブリック製品860を備える。次に、ナノファブリック製品860及び/または電極が電気的な刺激にさらされ、ナノファブリック製品860を電極820に向かってまたは電極820から偏向させる。添付された参考文献に説明されるように、偏向された製品は不揮発的にその偏向された状態を保持する。
ウェハ基板、上にあるナノファブリック、AI2O3の犠牲層の下の埋め込まれたチタニウム電極が設けられる。シプリー1805フォトレジストが、4000rpmで60秒間スピンコートすることによってウェハ表面に塗布される。フォトレジストは8秒間カスパーマスクアライナを使用して露光される。パターンは基本的な現像液を使用して現像され、それによりナノファブリックの部分を露光し、フォトレジストにより保護される他の部分を残す。基板は純水ですすがれ、115℃で乾燥される。ナノファブリックの露光部分は280ミリトルという圧力及び300ワットという電力で毎分25立方フィートの酸素を用いて5分間プラズマ灰化によって除去される。基板は70℃でn−メチルピロリジノンの中に浸けられ、30分間残りのフォトレジストを除去する。基板はイソプロパノールで濯がれ、乾燥される。熱いリン酸がAI2O3を除去するために塗布され、それが偏向時に電気的に接触する可能性がある電極の上に、パターン化されたナノファブリックを吊り下げたままとする。図8Bはこの方法により作成されるパターン化されたナノファブリックのFESEN画像を表示する。該顕微鏡写真では、剥き出しの基板領域は暗く、ナノファブリックパッチは明るい色であり、縦方向の光ストライプは金属性の電極である。長さが100μmであり、幅が3μmのパターン化されたトレースのための典型的な抵抗率は1から10MΩである。図8Cは8Bと同じ構造のFESM画像をさらに大きな倍率で表示する。暗い長手方向のストライプは、金属電極上にある犠牲層である。図8Dは犠牲層が除去された同じ構造のFESM画像を表示する。名のファブリックは電極上に吊り下げられ、電極と接触していないのが分かる。
他の実施形態はカーボンナノチューブファブリックの制御された組成を必要とする。具体的には、方法は、ナノファブリックの中の金属性のナノチューブ及び半導体ナノチューブの相対的な量を制御するために利用されてよい。このようにして、ナノファブリックは半導体ナノチューブを基準にして、金属性ナノチューブのさらに高い、またはさらに低いパーセンテージを有するように作られる。相応して、ナノファブリックの他の特性(例えば抵抗)が変化する。制御は所望されていない種の直接的な生長、除去、あるいは純正化されたナノチューブの塗布により達成されてよい。
基板表面に付着するか、あるいは回転されたSWNTに残っている触媒は、リボンの所望される特性が、それが金属/触媒から解放されることを含む場合にすすぎ/洗浄のステップによって除去されてよい。これは、通常ナノチューブ生長の間に粒子を不動態化する外部炭素シェルの除去を生じさせる適切な溶媒または酸の中での連続処理により実行できるであろう。他の反応を起こしていないナノ粒子は穏やかな溶液洗浄だけで削除できるであろう。
Claims (82)
- 基板を提供することと、
基板の表面に予備形成されたナノチューブを塗布し、カーボンナノチューブの不織布を作成することと、
不織布の部分を定められたパターンに従って選択的に除去し、製品を作成することと、
を備えることを特徴とする製品を製造する方法。 - 基板の表面に対する予備形成したナノチューブの接着を促進するために表面を機能化することを含むことを特徴とする請求項1に記載の方法。
- 表面を機能化する行為が表面状態を化学的に変換するために表面を誘導体化することを含むことを特徴とする請求項1に記載の方法。
- 炭素及び他の不純物を除去するために表面を酸化することをさらに含む請求項2の方法。
- 表面がシランと反応させられることを特徴とする請求項1に記載の方法。
- 表面が3−アミノプロピルトリエトキシシラン(APTS)にさらされることを特徴とする請求項1に記載の方法。
- 表面がAPTSの約1から50モル溶液にさらされることを特徴とする請求項6に記載の方法。
- 表面がAPTSの約13から28モル溶液にさらされることを特徴とする請求項6に記載の方法。
- APTSの溶液がヘキサンを含むことを特徴とする請求項8に記載の方法。
- 基板が所定の時間APTSの溶液に浸漬されることを特徴とする請求項7に記載の方法。
- シランが実質的に単分子層として表面に付着されることを特徴とする請求項5に記載の方法。
- 基板が予備形成されたナノチューブの塗布の前にヘキサンの中で保管されることを特徴とする請求項9に記載の方法。
- 表面へのナノチューブの塗布が、予備形成されたナノチューブを分散するために基板を回転することを含むことを特徴とする請求項1に記載の方法。
- 予備形成されたナノチューブがレーザアブレーションされたナノチューブであることを特徴とする請求項1に記載の方法。
- 予備形成されたナノチューブが高圧一酸化炭素分解ナノチューブであることを特徴とする請求項1に記載の方法。
- 予備形成されたナノチューブが単壁ナノチューブであることを特徴とする請求項1に記載の方法。
- 予備形成されたナノチューブが多壁ナノチューブであることを特徴とする請求項1に記載の方法。
- ナノチューブが約100から500μg/mLという濃度で溶媒と混合されることを特徴とする請求項14に記載の方法。
- 溶媒が1,2ジクロロベンジンであることを特徴とする請求項18に記載の方法。
- 溶媒の中のナノチューブが分散させられることを特徴とする請求項18に記載の方法。
- ナノチューブの溶液及び溶媒が超音波処理にさらされることを特徴とする請求項20に記載の方法。
- ナノチューブが約10から200μg/mLという濃度で溶媒と混合されることを特徴とする請求項15に記載の方法。
- 溶媒が1,2ジクロロベンジンであることを特徴とする請求項22に記載の方法。
- 溶媒中のナノチューブが分散させられることを特徴とする請求項22に記載の方法。
- ナノチューブの溶液と溶媒が超音波処理にさらされることを特徴とする請求項24に記載の方法。
- 基板が、ナノチューブを含む溶液が基板に付着されるにつれて所定の速度で回転させられ、表面が所定の期間回転し続けることを特徴とする請求項13に記載の方法。
- 所定の速度が約1000rpmであり、定められた期間が約30秒であることを特徴とする請求項26に記載の方法。
- 基板がナノチューブの塗布に続いて乾燥されることを特徴とする請求項26に記載の方法。
- 基板が以後の回転動作により乾燥されることを特徴とする請求項28に記載の方法。
- ナノチューブの塗布が、予備形成されたナノチューブの溶液の複数のスピンコート動作により達成されることを特徴とする請求項13に記載の方法。
- スピンコート動作の間で基板が溶媒から乾燥されることを特徴とする請求項30に記載の方法。
- ナノチューブを塗布すると、約1から1000kΩ/□という抵抗により特徴付けられる不織布を生じさせるために十分なナノチューブの密度が生じることを特徴とする請求項1に記載の方法。
- 不織布付きの基板が焼きなまされることを特徴とする請求項1に記載の方法。
- 不織布のカーボンナノチューブが金属性ナノチューブ及び半導体ナノチューブを含み、ファブリック内での金属性ナノチューブと半導体ナノチューブの相対的な組成が制御されることを特徴とする請求項1に記載の方法。
- 不織布のカーボンナノチューブが金属性のナノチューブと半導体ナノチューブを含み、方法が金属性ナノチューブを選択的に除去することをさらに含むことを特徴とする請求項1に記載の方法。
- 不織布のカーボンナノチューブが金属性ナノチューブと半導体ナノチューブを含み、方法が半導体ナノチューブを選択的に除去することをさらに含む請求項1に記載の方法。
- 選択的に金属性のナノチューブを除去した後に、予備形成されたナノチューブの以後の塗布が行われることを特徴とする請求項35に記載の方法。
- 選択的に半導体ナノチューブを除去した後に、予備形成されたナノチューブの以後の塗布が行われることを特徴とする請求項36に記載の方法。
- 不織布が基板の表面を覆い、実質的に一様な密度となることを特徴とする請求項1に記載の方法。
- 不織布が、基板の表面を覆い、厚さが約2nm以下になるように作られることを特徴とする請求項1に記載の方法。
- ウェハ基板を提供することと、
ウェハ基板の表面に予備形成されたナノチューブを塗布し、接触しているカーボンナノチューブの不織布を作成し、不織布が実質的に一様な密度であることと、
を備えることを特徴するウェハ基板に対してナノチューブの不織布を作る方法。 - ファブリックがおもにナノチューブの単分子層であることを特徴とする請求項41に記載の方法。
- ファブリックの厚さが約2nm以下であることを特徴とする請求項41に記載の方法。
- 予備形成されたナノチューブが単壁ナノチューブであることを特徴とする請求項41に記載の方法。
- 予備形成されたナノチューブのウェハ基板の表面への接着を促進するために表面を機能化することを特徴とする請求項41に記載の方法。
- 表面を機能化する行為が表面状態を化学的に変換するために表面を誘導体化することを含むことを特徴とする請求項43に記載の方法。
- 炭素及び他の不純物を除去するために表面を酸化することをさらに含む請求項43に記載の方法。
- 表面がシランと反応させられることを特徴とする請求項41に記載の方法。
- 表面が3−アミノプロピルトリエトキシシラン(APTS)にさらされることを特徴とする請求項41に記載の方法。
- 表面がAPTSの約1から50モルの溶液にさらされることを特徴とする請求項47に記載の方法。
- 表面がAPTSの約13から28モルの溶液にさらされることを特徴とする請求項47に記載の方法。
- APTSの溶液がヘキサンを含むことを特徴とする請求項49に記載の方法。
- 基板が所定の時間APTSの溶液の中に浸漬されることを特徴とする請求項48に記載の方法。
- シランが実質的に単分子層として表面上に付着されることを特徴とする請求項46に記載の方法。
- 基板に塗布される予備形成されたナノチューブが半導体ナノチューブを基準にして金属性ナノチューブの制御された組成を有することを特徴とする請求項41に記載の方法。
- ナノチューブの表面への塗布が予備形成されたナノチューブを分散するために基板を回転することを含む請求項41に記載の方法。
- 予備形成されたナノチューブがレーザアブレーションされたナノチューブであることを特徴とする請求項41に記載の方法。
- 予備形成されたナノチューブが高圧一酸化分解ナノチューブであることを特徴とする請求項41に記載の方法。
- 予備形成されたナノチューブがカーボン単壁ナノチューブであることを特徴とする請求項41に記載の方法。
- 事前に形成されたナノチューブが多壁ナノチューブであることを特徴とする請求項41に記載の方法。
- ナノチューブが約100から500μg/mLという濃度で溶媒と混合されることを特徴とする請求項55に記載の方法。
- 溶媒が1,2ジクロロベンジンであることを特徴とする請求項59に記載の方法。
- 溶媒中のナノチューブが分散させられることを特徴とする請求項59に記載の方法。
- ナノチューブの溶液と溶媒が超音波処理にさらされることを特徴とする請求項61に記載の方法。
- ナノチューブが約10から200μg/mlの濃度で溶媒と混合されることを特徴とする請求項56に記載の方法。
- 溶媒が1,2ジクロロベンジンであることを特徴とする請求項63に記載の方法。
- 溶媒中のナノチューブが分散させられることを特徴とする請求項63に記載の方法。
- ナノチューブの溶液及び溶媒が超音波処理にさらされることを特徴とする請求項65に記載の方法。
- ナノチューブを含む溶液が表面に付着されるにつれて基板が溶液として所定の速度で回転され、表面が所定の期間回転し続けることを特徴とする請求項54に記載の方法。
- 所定の速度が約1000rpmであり、所定期間が約30秒であることを特徴とする請求項67に記載の方法。
- 基板がナノチューブの塗布に続いて乾燥されることを特徴とする請求項67に記載の方法。
- 基板が以後の回転動作により乾燥されることを特徴とする請求項69に記載の方法。
- ナノチューブの塗布が、予備形成されたナノチューブの溶液の複数のスピンコート動作によって達成されることを特徴とする請求項54に記載の方法。
- スピンコート動作の間で基板が溶液から乾燥されることを特徴とする請求項71に記載の方法。
- ナノチューブの塗布が約1から1000kΩ/□という抵抗により特徴付けられる不織布を生じさせるほどナノチューブの十分な密度を生じさせることを特徴とする請求項41に記載の方法。
- 不織布を備える基板が焼きなまされることを特徴とする請求項41に記載の方法。
- 不織布のカーボンナノチューブが金属性のナノチューブと半導体ナノチューブを含み、ファブリックの中の金属性のナノチューブと半導体ナノチューブの相対的な組成が制御されることを特徴とする請求項41に記載の方法。
- 不織布のカーボンナノチューブが金属性のナノチューブと半導体ナノチューブを含み、方法が金属性のナノチューブを選択的に除去することをさらに含むことを特徴とする請求項41に記載の方法。
- 不織布のカーボンナノチューブが金属性のナノチューブと半導体のナノチューブを含み、方法が半導体ナノチューブを選択的に除去することをさらに含むことを特徴とする請求項41に記載の方法。
- 金属性のナノチューブを選択的に除去したのに続き、予備形成されたナノチューブの以後の塗布が行われることを特徴とする請求項77に記載の方法。
- 半導体ナノチューブを選択的に除去したのに続き、予備形成されたナノチューブの以後の塗布が行われることを特徴とする請求項78に記載の方法。
- 基板に塗布される予備形成されたナノチューブが、半導体ナノチューブを基準にして金属性のナノチューブの制御された組成を有することを特徴とする請求項1に記載の方法。
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JP2013530302A (ja) * | 2010-03-11 | 2013-07-25 | エルジー・ケム・リミテッド | ベルト状の金属ナノ構造体及びその製造方法 |
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Also Published As
Publication number | Publication date |
---|---|
KR20040104577A (ko) | 2004-12-10 |
TW200412325A (en) | 2004-07-16 |
US20030198812A1 (en) | 2003-10-23 |
US20160232972A1 (en) | 2016-08-11 |
EP1497485A1 (en) | 2005-01-19 |
TWI298709B (en) | 2008-07-11 |
US6706402B2 (en) | 2004-03-16 |
WO2003091486A1 (en) | 2003-11-06 |
US20040159833A1 (en) | 2004-08-19 |
AU2003214832A1 (en) | 2003-11-10 |
EP1677373A2 (en) | 2006-07-05 |
JP5878679B2 (ja) | 2016-03-08 |
US20050058834A1 (en) | 2005-03-17 |
US6942921B2 (en) | 2005-09-13 |
KR100956832B1 (ko) | 2010-05-11 |
US7745810B2 (en) | 2010-06-29 |
US10096363B2 (en) | 2018-10-09 |
EP1497485A4 (en) | 2008-03-19 |
US20050191495A1 (en) | 2005-09-01 |
CA2483009A1 (en) | 2003-11-06 |
EP1677373A3 (en) | 2008-05-28 |
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