JP2005302091A5 - - Google Patents

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Publication number
JP2005302091A5
JP2005302091A5 JP2004113440A JP2004113440A JP2005302091A5 JP 2005302091 A5 JP2005302091 A5 JP 2005302091A5 JP 2004113440 A JP2004113440 A JP 2004113440A JP 2004113440 A JP2004113440 A JP 2004113440A JP 2005302091 A5 JP2005302091 A5 JP 2005302091A5
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Japan
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storage element
information
state
changed
semiconductor integrated
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JP2004113440A
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English (en)
Japanese (ja)
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JP2005302091A (ja
JP4282529B2 (ja
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Priority claimed from JP2004113440A external-priority patent/JP4282529B2/ja
Priority to JP2004113440A priority Critical patent/JP4282529B2/ja
Priority to US10/898,249 priority patent/US7046569B2/en
Priority to TW094107989A priority patent/TWI291177B/zh
Priority to CNB2005100650532A priority patent/CN100524525C/zh
Priority to KR1020050028373A priority patent/KR100686273B1/ko
Publication of JP2005302091A publication Critical patent/JP2005302091A/ja
Publication of JP2005302091A5 publication Critical patent/JP2005302091A5/ja
Publication of JP4282529B2 publication Critical patent/JP4282529B2/ja
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Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004113440A 2004-04-07 2004-04-07 半導体集積回路装置及びそのプログラム方法 Expired - Fee Related JP4282529B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004113440A JP4282529B2 (ja) 2004-04-07 2004-04-07 半導体集積回路装置及びそのプログラム方法
US10/898,249 US7046569B2 (en) 2004-04-07 2004-07-26 Semiconductor integrated circuit device including OTP memory, and method of programming OTP memory
TW094107989A TWI291177B (en) 2004-04-07 2005-03-16 Semiconductor integrated circuit device with OTP memory and programming method for OTP memory
CNB2005100650532A CN100524525C (zh) 2004-04-07 2005-04-05 具有otp存储器的半导体集成电路器件及其编程方法
KR1020050028373A KR100686273B1 (ko) 2004-04-07 2005-04-06 반도체 집적 회로 장치 및 그 프로그램 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004113440A JP4282529B2 (ja) 2004-04-07 2004-04-07 半導体集積回路装置及びそのプログラム方法

Publications (3)

Publication Number Publication Date
JP2005302091A JP2005302091A (ja) 2005-10-27
JP2005302091A5 true JP2005302091A5 (enExample) 2005-12-08
JP4282529B2 JP4282529B2 (ja) 2009-06-24

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004113440A Expired - Fee Related JP4282529B2 (ja) 2004-04-07 2004-04-07 半導体集積回路装置及びそのプログラム方法

Country Status (5)

Country Link
US (1) US7046569B2 (enExample)
JP (1) JP4282529B2 (enExample)
KR (1) KR100686273B1 (enExample)
CN (1) CN100524525C (enExample)
TW (1) TWI291177B (enExample)

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TWI514399B (zh) * 2009-07-27 2015-12-21 Sidense Corp 非揮發性記憶體之冗餘方法
US9123429B2 (en) 2009-07-27 2015-09-01 Sidense Corp. Redundancy system for non-volatile memory
KR101061313B1 (ko) * 2010-01-28 2011-08-31 주식회사 하이닉스반도체 보안 제어장치를 포함하는 반도체 메모리 장치
US8724364B2 (en) 2011-09-14 2014-05-13 Semiconductor Components Industries, Llc Electronic device including a nonvolatile memory structure having an antifuse component and a process of using the same
US8530283B2 (en) 2011-09-14 2013-09-10 Semiconductor Components Industries, Llc Process for forming an electronic device including a nonvolatile memory structure having an antifuse component
US8741697B2 (en) 2011-09-14 2014-06-03 Semiconductor Components Industries, Llc Electronic device including a nonvolatile memory structure having an antifuse component and a process of forming the same
KR20130104287A (ko) 2012-03-13 2013-09-25 삼성전자주식회사 센싱 검증부를 포함하는 반도체 메모리 장치
KR20130119196A (ko) * 2012-04-23 2013-10-31 에스케이하이닉스 주식회사 반도체 장치
US8964444B2 (en) * 2012-04-25 2015-02-24 Semiconductor Components Industries, Llc One-time programmable memory, integrated circuit including same, and method therefor
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US10127998B2 (en) * 2013-09-26 2018-11-13 Nxp Usa, Inc. Memory having one time programmable (OTP) elements and a method of programming the memory
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