KR100686273B1 - 반도체 집적 회로 장치 및 그 프로그램 방법 - Google Patents

반도체 집적 회로 장치 및 그 프로그램 방법 Download PDF

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Publication number
KR100686273B1
KR100686273B1 KR1020050028373A KR20050028373A KR100686273B1 KR 100686273 B1 KR100686273 B1 KR 100686273B1 KR 1020050028373 A KR1020050028373 A KR 1020050028373A KR 20050028373 A KR20050028373 A KR 20050028373A KR 100686273 B1 KR100686273 B1 KR 100686273B1
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South Korea
Prior art keywords
circuit
signal
memory
state
information
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Korean (ko)
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KR20060045511A (ko
Inventor
히로시 이또
도시마사 나메까와
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가부시끼가이샤 도시바
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits

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  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020050028373A 2004-04-07 2005-04-06 반도체 집적 회로 장치 및 그 프로그램 방법 Expired - Fee Related KR100686273B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004113440A JP4282529B2 (ja) 2004-04-07 2004-04-07 半導体集積回路装置及びそのプログラム方法
JPJP-P-2004-00113440 2004-04-07

Publications (2)

Publication Number Publication Date
KR20060045511A KR20060045511A (ko) 2006-05-17
KR100686273B1 true KR100686273B1 (ko) 2007-02-26

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KR1020050028373A Expired - Fee Related KR100686273B1 (ko) 2004-04-07 2005-04-06 반도체 집적 회로 장치 및 그 프로그램 방법

Country Status (5)

Country Link
US (1) US7046569B2 (enExample)
JP (1) JP4282529B2 (enExample)
KR (1) KR100686273B1 (enExample)
CN (1) CN100524525C (enExample)
TW (1) TWI291177B (enExample)

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US7450414B2 (en) * 2006-07-31 2008-11-11 Sandisk 3D Llc Method for using a mixed-use memory array
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US20080211060A1 (en) * 2007-03-01 2008-09-04 Kuang-Yeh Chang Anti-fuse which will not generate a non-linear current after being blown and otp memory cell utilizing the anti-fuse
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JP5266920B2 (ja) * 2008-07-15 2013-08-21 富士通セミコンダクター株式会社 ヒューズ素子読み出し回路
JP2010146636A (ja) * 2008-12-18 2010-07-01 Toshiba Corp 半導体集積回路装置及びメモリシステム
US8395923B2 (en) * 2008-12-30 2013-03-12 Intel Corporation Antifuse programmable memory array
JP2010165397A (ja) * 2009-01-14 2010-07-29 Toshiba Corp 不揮発性半導体記憶装置
JP2010165442A (ja) * 2009-01-19 2010-07-29 Toshiba Corp 不揮発性半導体記憶装置
TWI514399B (zh) * 2009-07-27 2015-12-21 Sidense Corp 非揮發性記憶體之冗餘方法
US9123429B2 (en) 2009-07-27 2015-09-01 Sidense Corp. Redundancy system for non-volatile memory
KR101061313B1 (ko) * 2010-01-28 2011-08-31 주식회사 하이닉스반도체 보안 제어장치를 포함하는 반도체 메모리 장치
US8724364B2 (en) 2011-09-14 2014-05-13 Semiconductor Components Industries, Llc Electronic device including a nonvolatile memory structure having an antifuse component and a process of using the same
US8530283B2 (en) 2011-09-14 2013-09-10 Semiconductor Components Industries, Llc Process for forming an electronic device including a nonvolatile memory structure having an antifuse component
US8741697B2 (en) 2011-09-14 2014-06-03 Semiconductor Components Industries, Llc Electronic device including a nonvolatile memory structure having an antifuse component and a process of forming the same
KR20130104287A (ko) 2012-03-13 2013-09-25 삼성전자주식회사 센싱 검증부를 포함하는 반도체 메모리 장치
KR20130119196A (ko) * 2012-04-23 2013-10-31 에스케이하이닉스 주식회사 반도체 장치
US8964444B2 (en) * 2012-04-25 2015-02-24 Semiconductor Components Industries, Llc One-time programmable memory, integrated circuit including same, and method therefor
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US9218509B2 (en) 2013-02-08 2015-12-22 Everspin Technologies, Inc. Response to tamper detection in a memory device
US10127998B2 (en) * 2013-09-26 2018-11-13 Nxp Usa, Inc. Memory having one time programmable (OTP) elements and a method of programming the memory
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US9336872B2 (en) * 2014-03-11 2016-05-10 Everspin Technologies, Inc. Nonvolatile logic and security circuits
US9496270B2 (en) 2014-05-30 2016-11-15 Qualcomm Incorporated High density single-transistor antifuse memory cell
US9786383B2 (en) 2015-02-25 2017-10-10 Ememory Technology Inc. One time programmable non-volatile memory and read sensing method thereof
US9627088B2 (en) * 2015-02-25 2017-04-18 Ememory Technology Inc. One time programmable non-volatile memory and read sensing method thereof
KR20170016108A (ko) 2015-08-03 2017-02-13 삼성전자주식회사 오티피 메모리 장치의 프로그램 방법 및 이를 포함하는 반도체 집적 회로의 테스트 방법
US10181357B2 (en) * 2015-08-18 2019-01-15 Ememory Technology Inc. Code generating apparatus and one time programming block
KR102753310B1 (ko) * 2016-12-13 2025-01-14 에스케이하이닉스 주식회사 반도체 장치 및 그의 동작 방법
CN111192619A (zh) * 2019-12-25 2020-05-22 北京时代民芯科技有限公司 一种基于栅氧击穿型反熔丝存储阵列的编程系统及方法
JP7234178B2 (ja) * 2020-03-19 2023-03-07 株式会社東芝 記憶装置
JP2021149996A (ja) 2020-03-23 2021-09-27 株式会社東芝 半導体記憶装置、及び半導体記憶装置の制御方法
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Also Published As

Publication number Publication date
US7046569B2 (en) 2006-05-16
JP2005302091A (ja) 2005-10-27
JP4282529B2 (ja) 2009-06-24
KR20060045511A (ko) 2006-05-17
TWI291177B (en) 2007-12-11
CN1681045A (zh) 2005-10-12
TW200603167A (en) 2006-01-16
US20050226078A1 (en) 2005-10-13
CN100524525C (zh) 2009-08-05

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