TWI291177B - Semiconductor integrated circuit device with OTP memory and programming method for OTP memory - Google Patents

Semiconductor integrated circuit device with OTP memory and programming method for OTP memory Download PDF

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Publication number
TWI291177B
TWI291177B TW094107989A TW94107989A TWI291177B TW I291177 B TWI291177 B TW I291177B TW 094107989 A TW094107989 A TW 094107989A TW 94107989 A TW94107989 A TW 94107989A TW I291177 B TWI291177 B TW I291177B
Authority
TW
Taiwan
Prior art keywords
circuit
memory
signal
semiconductor integrated
voltage
Prior art date
Application number
TW094107989A
Other languages
English (en)
Chinese (zh)
Other versions
TW200603167A (en
Inventor
Hiroshi Ito
Toshimasa Namekawa
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of TW200603167A publication Critical patent/TW200603167A/zh
Application granted granted Critical
Publication of TWI291177B publication Critical patent/TWI291177B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW094107989A 2004-04-07 2005-03-16 Semiconductor integrated circuit device with OTP memory and programming method for OTP memory TWI291177B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004113440A JP4282529B2 (ja) 2004-04-07 2004-04-07 半導体集積回路装置及びそのプログラム方法

Publications (2)

Publication Number Publication Date
TW200603167A TW200603167A (en) 2006-01-16
TWI291177B true TWI291177B (en) 2007-12-11

Family

ID=35060380

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094107989A TWI291177B (en) 2004-04-07 2005-03-16 Semiconductor integrated circuit device with OTP memory and programming method for OTP memory

Country Status (5)

Country Link
US (1) US7046569B2 (enExample)
JP (1) JP4282529B2 (enExample)
KR (1) KR100686273B1 (enExample)
CN (1) CN100524525C (enExample)
TW (1) TWI291177B (enExample)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7800932B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Memory cell comprising switchable semiconductor memory element with trimmable resistance
JP4282529B2 (ja) 2004-04-07 2009-06-24 株式会社東芝 半導体集積回路装置及びそのプログラム方法
GB0419465D0 (en) * 2004-09-02 2004-10-06 Cavendish Kinetics Ltd Method and apparatus for programming and reading codes
EP1640844A1 (en) * 2004-09-27 2006-03-29 STMicroelectronics Limited Secure OTP using external memory
US7263027B2 (en) * 2004-10-14 2007-08-28 Broadcom Corporation Integrated circuit chip having non-volatile on-chip memories for providing programmable functions and features
JP4302049B2 (ja) * 2004-12-17 2009-07-22 株式会社東芝 不揮発性半導体記憶装置
JP2006236511A (ja) * 2005-02-25 2006-09-07 Toshiba Corp 半導体集積回路装置
US7411810B2 (en) 2005-12-11 2008-08-12 Juhan Kim One-time programmable memory
WO2008016419A2 (en) * 2006-07-31 2008-02-07 Sandisk 3D Llc Mixed-use memory array and method for use therewith
US7486537B2 (en) * 2006-07-31 2009-02-03 Sandisk 3D Llc Method for using a mixed-use memory array with different data states
US20080025069A1 (en) * 2006-07-31 2008-01-31 Scheuerlein Roy E Mixed-use memory array with different data states
US7450414B2 (en) * 2006-07-31 2008-11-11 Sandisk 3D Llc Method for using a mixed-use memory array
JP4818024B2 (ja) * 2006-08-23 2011-11-16 株式会社東芝 半導体記憶装置
JP4928878B2 (ja) * 2006-09-11 2012-05-09 株式会社東芝 不揮発性半導体記憶装置
EP2122632B1 (en) * 2006-12-22 2014-06-25 Sidense Corp. Dual function data register
JP2008198304A (ja) 2007-02-15 2008-08-28 Toshiba Corp 不揮発性半導体記憶装置
JP4922009B2 (ja) * 2007-02-19 2012-04-25 株式会社東芝 半導体記憶装置
US20080211060A1 (en) * 2007-03-01 2008-09-04 Kuang-Yeh Chang Anti-fuse which will not generate a non-linear current after being blown and otp memory cell utilizing the anti-fuse
US7778074B2 (en) * 2007-03-23 2010-08-17 Sigmatel, Inc. System and method to control one time programmable memory
US7564707B2 (en) * 2007-08-22 2009-07-21 Zerog Wireless, Inc. One-time programmable non-volatile memory
JP2009087453A (ja) * 2007-09-28 2009-04-23 Sanyo Electric Co Ltd 情報記憶回路
JP5266920B2 (ja) * 2008-07-15 2013-08-21 富士通セミコンダクター株式会社 ヒューズ素子読み出し回路
JP2010146636A (ja) * 2008-12-18 2010-07-01 Toshiba Corp 半導体集積回路装置及びメモリシステム
US8395923B2 (en) * 2008-12-30 2013-03-12 Intel Corporation Antifuse programmable memory array
JP2010165397A (ja) * 2009-01-14 2010-07-29 Toshiba Corp 不揮発性半導体記憶装置
JP2010165442A (ja) * 2009-01-19 2010-07-29 Toshiba Corp 不揮発性半導体記憶装置
TWI514399B (zh) * 2009-07-27 2015-12-21 Sidense Corp 非揮發性記憶體之冗餘方法
US9123429B2 (en) 2009-07-27 2015-09-01 Sidense Corp. Redundancy system for non-volatile memory
KR101061313B1 (ko) * 2010-01-28 2011-08-31 주식회사 하이닉스반도체 보안 제어장치를 포함하는 반도체 메모리 장치
US8724364B2 (en) 2011-09-14 2014-05-13 Semiconductor Components Industries, Llc Electronic device including a nonvolatile memory structure having an antifuse component and a process of using the same
US8530283B2 (en) 2011-09-14 2013-09-10 Semiconductor Components Industries, Llc Process for forming an electronic device including a nonvolatile memory structure having an antifuse component
US8741697B2 (en) 2011-09-14 2014-06-03 Semiconductor Components Industries, Llc Electronic device including a nonvolatile memory structure having an antifuse component and a process of forming the same
KR20130104287A (ko) 2012-03-13 2013-09-25 삼성전자주식회사 센싱 검증부를 포함하는 반도체 메모리 장치
KR20130119196A (ko) * 2012-04-23 2013-10-31 에스케이하이닉스 주식회사 반도체 장치
US8964444B2 (en) * 2012-04-25 2015-02-24 Semiconductor Components Industries, Llc One-time programmable memory, integrated circuit including same, and method therefor
US9135970B2 (en) * 2013-02-08 2015-09-15 Everspin Technologies, Inc. Tamper detection and response in a memory device
US9218509B2 (en) 2013-02-08 2015-12-22 Everspin Technologies, Inc. Response to tamper detection in a memory device
US10127998B2 (en) * 2013-09-26 2018-11-13 Nxp Usa, Inc. Memory having one time programmable (OTP) elements and a method of programming the memory
TWI514396B (zh) * 2014-01-23 2015-12-21 Sidense Corp 非揮發性記憶體之冗餘系統
US9336872B2 (en) * 2014-03-11 2016-05-10 Everspin Technologies, Inc. Nonvolatile logic and security circuits
US9496270B2 (en) 2014-05-30 2016-11-15 Qualcomm Incorporated High density single-transistor antifuse memory cell
US9786383B2 (en) 2015-02-25 2017-10-10 Ememory Technology Inc. One time programmable non-volatile memory and read sensing method thereof
US9627088B2 (en) * 2015-02-25 2017-04-18 Ememory Technology Inc. One time programmable non-volatile memory and read sensing method thereof
KR20170016108A (ko) 2015-08-03 2017-02-13 삼성전자주식회사 오티피 메모리 장치의 프로그램 방법 및 이를 포함하는 반도체 집적 회로의 테스트 방법
US10181357B2 (en) * 2015-08-18 2019-01-15 Ememory Technology Inc. Code generating apparatus and one time programming block
KR102753310B1 (ko) * 2016-12-13 2025-01-14 에스케이하이닉스 주식회사 반도체 장치 및 그의 동작 방법
CN111192619A (zh) * 2019-12-25 2020-05-22 北京时代民芯科技有限公司 一种基于栅氧击穿型反熔丝存储阵列的编程系统及方法
JP7234178B2 (ja) * 2020-03-19 2023-03-07 株式会社東芝 記憶装置
JP2021149996A (ja) 2020-03-23 2021-09-27 株式会社東芝 半導体記憶装置、及び半導体記憶装置の制御方法
US11699496B2 (en) * 2021-07-08 2023-07-11 Changxin Memory Technologies, Inc. Anti-fuse memory circuit

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6246496A (ja) * 1985-08-23 1987-02-28 Sony Corp 固定記憶装置の書き込み方法
JP2925138B2 (ja) * 1987-09-29 1999-07-28 株式会社東芝 不揮発性半導体メモリ
JPH06187791A (ja) * 1992-12-15 1994-07-08 Mitsubishi Electric Corp 半導体記憶装置
KR100267492B1 (ko) 1998-06-11 2000-11-01 김영환 여분 셀의 프로그래밍을 위한 엔티퓨즈를 가지는 리페어 회로및 그 제조 방법
US6522582B1 (en) 1999-03-05 2003-02-18 Xilinx, Inc. Non-volatile memory array using gate breakdown structures
US6243294B1 (en) 1999-03-05 2001-06-05 Xilinx, Inc. Memory architecture for non-volatile storage using gate breakdown structure in standard sub 0.35 micron process
JP3821637B2 (ja) * 2000-08-24 2006-09-13 株式会社東芝 半導体集積回路装置
US6384664B1 (en) * 2000-10-05 2002-05-07 Texas Instruments Incorporated Differential voltage sense circuit to detect the state of a CMOS process compatible fuses at low power supply voltages
JP2003168734A (ja) 2001-11-29 2003-06-13 Mitsubishi Electric Corp 半導体装置及びその制御方法、その製造方法
US6693819B2 (en) * 2002-01-08 2004-02-17 Broadcom Corporation High voltage switch circuitry
US7211843B2 (en) * 2002-04-04 2007-05-01 Broadcom Corporation System and method for programming a memory cell
WO2003096353A1 (en) * 2002-05-08 2003-11-20 Semtech Corporation Method and apparatus for improving the reliability of the reading of integrated circuit fuses
US6735108B2 (en) * 2002-07-08 2004-05-11 Micron Technology, Inc. ROM embedded DRAM with anti-fuse programming
JP2004087002A (ja) * 2002-08-27 2004-03-18 Fujitsu Ltd Ａｃセンス方式のメモリ回路
US6775189B2 (en) * 2002-12-25 2004-08-10 Ememory Technology Inc. Option fuse circuit using standard CMOS manufacturing process
US6944083B2 (en) * 2003-11-17 2005-09-13 Sony Corporation Method for detecting and preventing tampering with one-time programmable digital devices
JP4282529B2 (ja) 2004-04-07 2009-06-24 株式会社東芝 半導体集積回路装置及びそのプログラム方法

Also Published As

Publication number Publication date
KR100686273B1 (ko) 2007-02-26
US7046569B2 (en) 2006-05-16
JP2005302091A (ja) 2005-10-27
JP4282529B2 (ja) 2009-06-24
KR20060045511A (ko) 2006-05-17
CN1681045A (zh) 2005-10-12
TW200603167A (en) 2006-01-16
US20050226078A1 (en) 2005-10-13
CN100524525C (zh) 2009-08-05

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