CN100524525C - 具有otp存储器的半导体集成电路器件及其编程方法 - Google Patents

具有otp存储器的半导体集成电路器件及其编程方法 Download PDF

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Publication number
CN100524525C
CN100524525C CNB2005100650532A CN200510065053A CN100524525C CN 100524525 C CN100524525 C CN 100524525C CN B2005100650532 A CNB2005100650532 A CN B2005100650532A CN 200510065053 A CN200510065053 A CN 200510065053A CN 100524525 C CN100524525 C CN 100524525C
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China
Prior art keywords
signal
semiconductor integrated
circuit
programming
integrated circuit
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Expired - Fee Related
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CNB2005100650532A
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Chinese (zh)
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CN1681045A (zh
Inventor
伊藤洋
行川敏正
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Toshiba Corp
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Toshiba Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits

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  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
CNB2005100650532A 2004-04-07 2005-04-05 具有otp存储器的半导体集成电路器件及其编程方法 Expired - Fee Related CN100524525C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004113440 2004-04-07
JP2004113440A JP4282529B2 (ja) 2004-04-07 2004-04-07 半導体集積回路装置及びそのプログラム方法

Publications (2)

Publication Number Publication Date
CN1681045A CN1681045A (zh) 2005-10-12
CN100524525C true CN100524525C (zh) 2009-08-05

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CNB2005100650532A Expired - Fee Related CN100524525C (zh) 2004-04-07 2005-04-05 具有otp存储器的半导体集成电路器件及其编程方法

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US (1) US7046569B2 (enExample)
JP (1) JP4282529B2 (enExample)
KR (1) KR100686273B1 (enExample)
CN (1) CN100524525C (enExample)
TW (1) TWI291177B (enExample)

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CN111192619A (zh) * 2019-12-25 2020-05-22 北京时代民芯科技有限公司 一种基于栅氧击穿型反熔丝存储阵列的编程系统及方法

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Publication number Priority date Publication date Assignee Title
CN111192619A (zh) * 2019-12-25 2020-05-22 北京时代民芯科技有限公司 一种基于栅氧击穿型反熔丝存储阵列的编程系统及方法

Also Published As

Publication number Publication date
KR100686273B1 (ko) 2007-02-26
US7046569B2 (en) 2006-05-16
JP2005302091A (ja) 2005-10-27
JP4282529B2 (ja) 2009-06-24
KR20060045511A (ko) 2006-05-17
TWI291177B (en) 2007-12-11
CN1681045A (zh) 2005-10-12
TW200603167A (en) 2006-01-16
US20050226078A1 (en) 2005-10-13

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