JP2007500412A5 - - Google Patents

Download PDF

Info

Publication number
JP2007500412A5
JP2007500412A5 JP2006521858A JP2006521858A JP2007500412A5 JP 2007500412 A5 JP2007500412 A5 JP 2007500412A5 JP 2006521858 A JP2006521858 A JP 2006521858A JP 2006521858 A JP2006521858 A JP 2006521858A JP 2007500412 A5 JP2007500412 A5 JP 2007500412A5
Authority
JP
Japan
Prior art keywords
storage element
state storage
control line
over
programming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006521858A
Other languages
English (en)
Japanese (ja)
Other versions
JP4680904B2 (ja
JP2007500412A (ja
Filing date
Publication date
Priority claimed from US10/628,962 external-priority patent/US6914823B2/en
Application filed filed Critical
Publication of JP2007500412A publication Critical patent/JP2007500412A/ja
Publication of JP2007500412A5 publication Critical patent/JP2007500412A5/ja
Application granted granted Critical
Publication of JP4680904B2 publication Critical patent/JP4680904B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2006521858A 2003-07-29 2004-07-07 隣接するメモリセルのプログラミングの後にオーバー・プログラミングされたメモリセルを検出する技術 Expired - Fee Related JP4680904B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/628,962 US6914823B2 (en) 2003-07-29 2003-07-29 Detecting over programmed memory after further programming
PCT/US2004/021699 WO2005013283A1 (en) 2003-07-29 2004-07-07 Detecting over programmed memory cells after programming of adjacent memory cells

Publications (3)

Publication Number Publication Date
JP2007500412A JP2007500412A (ja) 2007-01-11
JP2007500412A5 true JP2007500412A5 (enExample) 2007-05-24
JP4680904B2 JP4680904B2 (ja) 2011-05-11

Family

ID=34103497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006521858A Expired - Fee Related JP4680904B2 (ja) 2003-07-29 2004-07-07 隣接するメモリセルのプログラミングの後にオーバー・プログラミングされたメモリセルを検出する技術

Country Status (9)

Country Link
US (1) US6914823B2 (enExample)
EP (1) EP1652191B1 (enExample)
JP (1) JP4680904B2 (enExample)
KR (1) KR101049582B1 (enExample)
CN (1) CN100474453C (enExample)
AT (1) ATE356410T1 (enExample)
DE (1) DE602004005211T8 (enExample)
TW (1) TWI264012B (enExample)
WO (1) WO2005013283A1 (enExample)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4084922B2 (ja) * 2000-12-22 2008-04-30 株式会社ルネサステクノロジ 不揮発性記憶装置の書込み方法
JP3935139B2 (ja) 2002-11-29 2007-06-20 株式会社東芝 半導体記憶装置
US6996004B1 (en) * 2003-11-04 2006-02-07 Advanced Micro Devices, Inc. Minimization of FG-FG coupling in flash memory
JP4170952B2 (ja) 2004-01-30 2008-10-22 株式会社東芝 半導体記憶装置
US7042766B1 (en) * 2004-07-22 2006-05-09 Spansion, Llc Method of programming a flash memory device using multilevel charge storage
US7230854B2 (en) * 2005-08-01 2007-06-12 Sandisk Corporation Method for programming non-volatile memory with self-adjusting maximum program loop
US7307887B2 (en) * 2005-12-29 2007-12-11 Sandisk Corporation Continued verification in non-volatile memory write operations
US7352629B2 (en) * 2005-12-29 2008-04-01 Sandisk Corporation Systems for continued verification in non-volatile memory write operations
US7450425B2 (en) * 2006-08-30 2008-11-11 Micron Technology, Inc. Non-volatile memory cell read failure reduction
US7593259B2 (en) 2006-09-13 2009-09-22 Mosaid Technologies Incorporated Flash multi-level threshold distribution scheme
KR100921949B1 (ko) * 2007-05-02 2009-10-15 충북대학교 산학협력단 표시장치용 구동 집적회로
US7619920B2 (en) * 2007-07-05 2009-11-17 Kabushiki Kaisha Toshiba NAND type flash memory and write method of the same
KR101411976B1 (ko) * 2007-07-09 2014-06-27 삼성전자주식회사 플래시 메모리 시스템 및 그것의 에러 정정 방법
KR101397549B1 (ko) * 2007-08-16 2014-05-26 삼성전자주식회사 고속 프로그램이 가능한 불휘발성 반도체 메모리 시스템 및그것의 독출 방법
JP4510060B2 (ja) * 2007-09-14 2010-07-21 株式会社東芝 不揮発性半導体記憶装置の読み出し／書き込み制御方法
KR101414494B1 (ko) * 2008-03-17 2014-07-04 삼성전자주식회사 메모리 장치 및 메모리 데이터 읽기 방법
US8014209B2 (en) 2008-07-02 2011-09-06 Sandisk Technologies Inc. Programming and selectively erasing non-volatile storage
KR101069004B1 (ko) * 2008-08-01 2011-09-29 주식회사 하이닉스반도체 플래시 메모리 소자의 프로그램 방법
US8422305B2 (en) * 2009-06-29 2013-04-16 Hynix Semiconductor Inc. Method of programming nonvolatile memory device
KR101124126B1 (ko) * 2009-06-29 2012-03-22 주식회사 하이닉스반도체 불휘발성 메모리 소자의 프로그램 방법
US8423866B2 (en) 2009-10-28 2013-04-16 SanDisk Technologies, Inc. Non-volatile memory and method with post-write read and adaptive re-write to manage errors
US8634240B2 (en) * 2009-10-28 2014-01-21 SanDisk Technologies, Inc. Non-volatile memory and method with accelerated post-write read to manage errors
US8214700B2 (en) 2009-10-28 2012-07-03 Sandisk Technologies Inc. Non-volatile memory and method with post-write read and adaptive re-write to manage errors
KR101082692B1 (ko) * 2009-12-31 2011-11-15 주식회사 하이닉스반도체 반도체 메모리 장치 및 이의 프로그램 방법
US8432732B2 (en) 2010-07-09 2013-04-30 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays
US8305807B2 (en) 2010-07-09 2012-11-06 Sandisk Technologies Inc. Detection of broken word-lines in memory arrays
US8514630B2 (en) 2010-07-09 2013-08-20 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays: current based approach
US8379454B2 (en) 2011-05-05 2013-02-19 Sandisk Technologies Inc. Detection of broken word-lines in memory arrays
KR20130008300A (ko) * 2011-07-12 2013-01-22 삼성전자주식회사 오버 프로그램을 이용하여 소거 동작을 수행하는 플래시 메모리 장치 및 그 동작방법
US9032269B2 (en) 2011-07-22 2015-05-12 Sandisk Technologies Inc. Systems and methods of storing data
US8775901B2 (en) 2011-07-28 2014-07-08 SanDisk Technologies, Inc. Data recovery for defective word lines during programming of non-volatile memory arrays
US20130031431A1 (en) 2011-07-28 2013-01-31 Eran Sharon Post-Write Read in Non-Volatile Memories Using Comparison of Data as Written in Binary and Multi-State Formats
US8726104B2 (en) 2011-07-28 2014-05-13 Sandisk Technologies Inc. Non-volatile memory and method with accelerated post-write read using combined verification of multiple pages
US8750042B2 (en) 2011-07-28 2014-06-10 Sandisk Technologies Inc. Combined simultaneous sensing of multiple wordlines in a post-write read (PWR) and detection of NAND failures
US8630118B2 (en) 2011-11-09 2014-01-14 Sandisk Technologies Inc. Defective word line detection
US8842476B2 (en) 2011-11-09 2014-09-23 Sandisk Technologies Inc. Erratic program detection for non-volatile storage
US8566671B1 (en) 2012-06-29 2013-10-22 Sandisk Technologies Inc. Configurable accelerated post-write read to manage errors
US9135989B2 (en) 2012-09-06 2015-09-15 Sandisk Technologies Inc. Write data preservation for non-volatile storage
US9053810B2 (en) 2013-03-08 2015-06-09 Sandisk Technologies Inc. Defect or program disturb detection with full data recovery capability
US9213601B2 (en) 2013-12-03 2015-12-15 Sandisk Technologies Inc. Adaptive data re-compaction after post-write read verification operations
KR102356072B1 (ko) * 2015-09-10 2022-01-27 에스케이하이닉스 주식회사 메모리 시스템 및 그 동작 방법
US10249382B2 (en) 2017-08-22 2019-04-02 Sandisk Technologies Llc Determination of fast to program word lines in non-volatile memory
KR102612891B1 (ko) * 2018-05-31 2023-12-13 에스케이하이닉스 주식회사 메모리 장치, 그것의 동작방법 및 메모리 시스템
US11545221B2 (en) 2018-06-29 2023-01-03 Sandisk Technologies Llc Concurrent programming of multiple cells for non-volatile memory devices
US10978156B2 (en) 2018-06-29 2021-04-13 Sandisk Technologies Llc Concurrent programming of multiple cells for non-volatile memory devices
US11081198B2 (en) 2019-05-16 2021-08-03 Sandisk Technologies Llc Non-volatile memory with countermeasure for over programming
US10839928B1 (en) 2019-05-16 2020-11-17 Sandisk Technologies Llc Non-volatile memory with countermeasure for over programming

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5602789A (en) 1991-03-12 1997-02-11 Kabushiki Kaisha Toshiba Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller
JP3152720B2 (ja) * 1991-03-12 2001-04-03 株式会社東芝 不揮発性半導体記憶装置
JPH08249893A (ja) * 1995-03-07 1996-09-27 Toshiba Corp 半導体記憶装置
KR960002006B1 (ko) 1991-03-12 1996-02-09 가부시끼가이샤 도시바 2개의 기준 레벨을 사용하는 기록 검증 제어기를 갖는 전기적으로 소거 가능하고 프로그램 가능한 불휘발성 메모리 장치
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5532962A (en) 1992-05-20 1996-07-02 Sandisk Corporation Soft errors handling in EEPROM devices
US5422580A (en) 1993-10-14 1995-06-06 Aps Technologies Switchable active termination for SCSI peripheral devices
US6131140A (en) 1995-12-22 2000-10-10 Cypress Semiconductor Corp. Integrated cache memory with system control logic and adaptation of RAM bus to a cache pinout
US5771346A (en) 1996-10-24 1998-06-23 Micron Quantum Devices, Inc. Apparatus and method for detecting over-programming condition in multistate memory device
US5764568A (en) 1996-10-24 1998-06-09 Micron Quantum Devices, Inc. Method for performing analog over-program and under-program detection for a multistate memory cell
JP3517081B2 (ja) 1997-05-22 2004-04-05 株式会社東芝 多値不揮発性半導体記憶装置
JP3246420B2 (ja) * 1997-11-06 2002-01-15 日本電気株式会社 電気的書込可能な半導体記憶装置
US5867429A (en) 1997-11-19 1999-02-02 Sandisk Corporation High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates
US6147547A (en) 1998-05-25 2000-11-14 Mitsubishi Denki Kabushiki Kaisha Charge pump circuit capable of generating positive and negative voltages and nonvolatile semiconductor memory device comprising the same
JP2000173289A (ja) 1998-12-10 2000-06-23 Toshiba Corp エラー訂正可能なフラッシュメモリシステム
TW475267B (en) 1999-07-13 2002-02-01 Toshiba Corp Semiconductor memory
JP2002190160A (ja) * 2000-12-20 2002-07-05 Sony Corp 再生装置、再生方法およびオーディオ・データ記憶媒体
KR100676722B1 (ko) 2000-12-21 2007-02-01 후지쯔 가부시끼가이샤 비휘발성 반도체 기억 장치 및 데이터 소거 방법
JP2002279788A (ja) * 2001-03-16 2002-09-27 Toshiba Corp 不揮発性半導体メモリ
US6493266B1 (en) 2001-04-09 2002-12-10 Advanced Micro Devices, Inc. Soft program and soft program verify of the core cells in flash memory array
US6522580B2 (en) 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
US6456528B1 (en) 2001-09-17 2002-09-24 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
US6542407B1 (en) * 2002-01-18 2003-04-01 Sandisk Corporation Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells
US6799256B2 (en) * 2002-04-12 2004-09-28 Advanced Micro Devices, Inc. System and method for multi-bit flash reads using dual dynamic references
WO2004001852A1 (en) 2002-06-19 2003-12-31 Sandisk Corporation Deep wordline trench to shield cross coupling between adjacent cells for scaled nand

Similar Documents

Publication Publication Date Title
JP2007500412A5 (enExample)
US20240127894A1 (en) Method for Reading Data Stored in a Flash Memory According to a Voltage Characteristic and Memory Controller Thereof
US9053822B2 (en) Methods of operating nonvolatile memory devices that support efficient error detection
TWI626659B (zh) 利用單位階單元分段之增強型動態讀取程序
JP5735543B2 (ja) データ状態に固有の失敗の計数に基づく不揮発性メモリのデータ復旧
US7463520B2 (en) Memory device with variable trim settings
CN100576352C (zh) 在非易失存储器设备中对用户数据和确认信息编程的方法
JP2007533055A5 (enExample)
WO2005041108A3 (en) A method circuit and system for read error detection in a non-volatile memory array
JP2005302091A5 (enExample)
US9471418B2 (en) Memory system that detects bit errors due to read disturbance and methods thereof
CN114792546B (zh) 存储器装置的基于深度学习的编程验证建模和电压估计
US20150033087A1 (en) Resting blocks of memory cells in response to the blocks being deemed to fail
KR101734741B1 (ko) 데이터 경로 무결성 검증
US9355051B2 (en) Apparatus, method, and manufacture for using a read preamble to optimize data capture
US20120147669A1 (en) Non-volatile memory device and a method for operating the device
US10290363B2 (en) Non-volatile memory device and error compensation method for verifying the same
US20120250410A1 (en) Semiconductor integrated circuit and data read method
JP2002109892A (ja) 不揮発性半導体記憶装置
US9230650B2 (en) Semiconductor device and method for operating the same
US8923071B2 (en) Method of programming a multi-bit per cell non-volatile memory
US8923068B2 (en) Low margin read operation with CRC comparision
US9343168B2 (en) Multiple step programming in a memory device
CN101853693A (zh) 储存装置以及延长储存装置的使用寿命的方法
CN121175748A (zh) 存储器装置及其操作方法、存储器系统及存储器控制器