TWI264012B - Detecting over programmed memory after further programming - Google Patents

Detecting over programmed memory after further programming

Info

Publication number
TWI264012B
TWI264012B TW093121649A TW93121649A TWI264012B TW I264012 B TWI264012 B TW I264012B TW 093121649 A TW093121649 A TW 093121649A TW 93121649 A TW93121649 A TW 93121649A TW I264012 B TWI264012 B TW I264012B
Authority
TW
Taiwan
Prior art keywords
over programmed
memory
programmed memory
further programming
detecting over
Prior art date
Application number
TW093121649A
Other languages
English (en)
Other versions
TW200518104A (en
Inventor
Jian Chen
Yan Li
Jeffrey W Lutze
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp filed Critical Sandisk Corp
Publication of TW200518104A publication Critical patent/TW200518104A/zh
Application granted granted Critical
Publication of TWI264012B publication Critical patent/TWI264012B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW093121649A 2003-07-29 2004-07-20 Detecting over programmed memory after further programming TWI264012B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/628,962 US6914823B2 (en) 2003-07-29 2003-07-29 Detecting over programmed memory after further programming

Publications (2)

Publication Number Publication Date
TW200518104A TW200518104A (en) 2005-06-01
TWI264012B true TWI264012B (en) 2006-10-11

Family

ID=34103497

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093121649A TWI264012B (en) 2003-07-29 2004-07-20 Detecting over programmed memory after further programming

Country Status (9)

Country Link
US (1) US6914823B2 (zh)
EP (1) EP1652191B1 (zh)
JP (1) JP4680904B2 (zh)
KR (1) KR101049582B1 (zh)
CN (1) CN100474453C (zh)
AT (1) ATE356410T1 (zh)
DE (1) DE602004005211T8 (zh)
TW (1) TWI264012B (zh)
WO (1) WO2005013283A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI832532B (zh) * 2007-09-14 2024-02-11 日商鎧俠股份有限公司 Ｉｃ封裝

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4084922B2 (ja) * 2000-12-22 2008-04-30 株式会社ルネサステクノロジ 不揮発性記憶装置の書込み方法
JP3935139B2 (ja) 2002-11-29 2007-06-20 株式会社東芝 半導体記憶装置
US6996004B1 (en) * 2003-11-04 2006-02-07 Advanced Micro Devices, Inc. Minimization of FG-FG coupling in flash memory
JP4170952B2 (ja) * 2004-01-30 2008-10-22 株式会社東芝 半導体記憶装置
US7042766B1 (en) * 2004-07-22 2006-05-09 Spansion, Llc Method of programming a flash memory device using multilevel charge storage
US7230854B2 (en) * 2005-08-01 2007-06-12 Sandisk Corporation Method for programming non-volatile memory with self-adjusting maximum program loop
US7307887B2 (en) * 2005-12-29 2007-12-11 Sandisk Corporation Continued verification in non-volatile memory write operations
US7352629B2 (en) * 2005-12-29 2008-04-01 Sandisk Corporation Systems for continued verification in non-volatile memory write operations
US7450425B2 (en) * 2006-08-30 2008-11-11 Micron Technology, Inc. Non-volatile memory cell read failure reduction
US7593259B2 (en) 2006-09-13 2009-09-22 Mosaid Technologies Incorporated Flash multi-level threshold distribution scheme
KR100921949B1 (ko) * 2007-05-02 2009-10-15 충북대학교 산학협력단 표시장치용 구동 집적회로
US7619920B2 (en) * 2007-07-05 2009-11-17 Kabushiki Kaisha Toshiba NAND type flash memory and write method of the same
KR101411976B1 (ko) * 2007-07-09 2014-06-27 삼성전자주식회사 플래시 메모리 시스템 및 그것의 에러 정정 방법
KR101397549B1 (ko) * 2007-08-16 2014-05-26 삼성전자주식회사 고속 프로그램이 가능한 불휘발성 반도체 메모리 시스템 및그것의 독출 방법
KR101414494B1 (ko) * 2008-03-17 2014-07-04 삼성전자주식회사 메모리 장치 및 메모리 데이터 읽기 방법
US8014209B2 (en) 2008-07-02 2011-09-06 Sandisk Technologies Inc. Programming and selectively erasing non-volatile storage
KR101069004B1 (ko) * 2008-08-01 2011-09-29 주식회사 하이닉스반도체 플래시 메모리 소자의 프로그램 방법
KR101124126B1 (ko) * 2009-06-29 2012-03-22 주식회사 하이닉스반도체 불휘발성 메모리 소자의 프로그램 방법
US8422305B2 (en) * 2009-06-29 2013-04-16 Hynix Semiconductor Inc. Method of programming nonvolatile memory device
US8634240B2 (en) 2009-10-28 2014-01-21 SanDisk Technologies, Inc. Non-volatile memory and method with accelerated post-write read to manage errors
US8423866B2 (en) * 2009-10-28 2013-04-16 SanDisk Technologies, Inc. Non-volatile memory and method with post-write read and adaptive re-write to manage errors
US8214700B2 (en) 2009-10-28 2012-07-03 Sandisk Technologies Inc. Non-volatile memory and method with post-write read and adaptive re-write to manage errors
KR101082692B1 (ko) * 2009-12-31 2011-11-15 주식회사 하이닉스반도체 반도체 메모리 장치 및 이의 프로그램 방법
US8432732B2 (en) 2010-07-09 2013-04-30 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays
US8514630B2 (en) 2010-07-09 2013-08-20 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays: current based approach
US8305807B2 (en) 2010-07-09 2012-11-06 Sandisk Technologies Inc. Detection of broken word-lines in memory arrays
US8379454B2 (en) 2011-05-05 2013-02-19 Sandisk Technologies Inc. Detection of broken word-lines in memory arrays
KR20130008300A (ko) * 2011-07-12 2013-01-22 삼성전자주식회사 오버 프로그램을 이용하여 소거 동작을 수행하는 플래시 메모리 장치 및 그 동작방법
US8874994B2 (en) 2011-07-22 2014-10-28 Sandisk Technologies Inc. Systems and methods of storing data
US8775901B2 (en) 2011-07-28 2014-07-08 SanDisk Technologies, Inc. Data recovery for defective word lines during programming of non-volatile memory arrays
US8726104B2 (en) 2011-07-28 2014-05-13 Sandisk Technologies Inc. Non-volatile memory and method with accelerated post-write read using combined verification of multiple pages
US8750042B2 (en) 2011-07-28 2014-06-10 Sandisk Technologies Inc. Combined simultaneous sensing of multiple wordlines in a post-write read (PWR) and detection of NAND failures
US20130031431A1 (en) 2011-07-28 2013-01-31 Eran Sharon Post-Write Read in Non-Volatile Memories Using Comparison of Data as Written in Binary and Multi-State Formats
US8842476B2 (en) 2011-11-09 2014-09-23 Sandisk Technologies Inc. Erratic program detection for non-volatile storage
US8630118B2 (en) 2011-11-09 2014-01-14 Sandisk Technologies Inc. Defective word line detection
US8566671B1 (en) 2012-06-29 2013-10-22 Sandisk Technologies Inc. Configurable accelerated post-write read to manage errors
US9135989B2 (en) 2012-09-06 2015-09-15 Sandisk Technologies Inc. Write data preservation for non-volatile storage
US9053810B2 (en) 2013-03-08 2015-06-09 Sandisk Technologies Inc. Defect or program disturb detection with full data recovery capability
US9213601B2 (en) 2013-12-03 2015-12-15 Sandisk Technologies Inc. Adaptive data re-compaction after post-write read verification operations
KR102356072B1 (ko) * 2015-09-10 2022-01-27 에스케이하이닉스 주식회사 메모리 시스템 및 그 동작 방법
US10249382B2 (en) 2017-08-22 2019-04-02 Sandisk Technologies Llc Determination of fast to program word lines in non-volatile memory
KR102612891B1 (ko) * 2018-05-31 2023-12-13 에스케이하이닉스 주식회사 메모리 장치, 그것의 동작방법 및 메모리 시스템
US11545221B2 (en) 2018-06-29 2023-01-03 Sandisk Technologies Llc Concurrent programming of multiple cells for non-volatile memory devices
US10978156B2 (en) 2018-06-29 2021-04-13 Sandisk Technologies Llc Concurrent programming of multiple cells for non-volatile memory devices
US10839928B1 (en) 2019-05-16 2020-11-17 Sandisk Technologies Llc Non-volatile memory with countermeasure for over programming
US11081198B2 (en) 2019-05-16 2021-08-03 Sandisk Technologies Llc Non-volatile memory with countermeasure for over programming

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08249893A (ja) * 1995-03-07 1996-09-27 Toshiba Corp 半導体記憶装置
JP3152720B2 (ja) * 1991-03-12 2001-04-03 株式会社東芝 不揮発性半導体記憶装置
KR960002006B1 (ko) 1991-03-12 1996-02-09 가부시끼가이샤 도시바 2개의 기준 레벨을 사용하는 기록 검증 제어기를 갖는 전기적으로 소거 가능하고 프로그램 가능한 불휘발성 메모리 장치
US5602789A (en) 1991-03-12 1997-02-11 Kabushiki Kaisha Toshiba Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5532962A (en) 1992-05-20 1996-07-02 Sandisk Corporation Soft errors handling in EEPROM devices
US5422580A (en) 1993-10-14 1995-06-06 Aps Technologies Switchable active termination for SCSI peripheral devices
US6131140A (en) 1995-12-22 2000-10-10 Cypress Semiconductor Corp. Integrated cache memory with system control logic and adaptation of RAM bus to a cache pinout
US5764568A (en) 1996-10-24 1998-06-09 Micron Quantum Devices, Inc. Method for performing analog over-program and under-program detection for a multistate memory cell
US5771346A (en) 1996-10-24 1998-06-23 Micron Quantum Devices, Inc. Apparatus and method for detecting over-programming condition in multistate memory device
JP3517081B2 (ja) 1997-05-22 2004-04-05 株式会社東芝 多値不揮発性半導体記憶装置
JP3246420B2 (ja) * 1997-11-06 2002-01-15 日本電気株式会社 電気的書込可能な半導体記憶装置
US5867429A (en) 1997-11-19 1999-02-02 Sandisk Corporation High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates
US6147547A (en) 1998-05-25 2000-11-14 Mitsubishi Denki Kabushiki Kaisha Charge pump circuit capable of generating positive and negative voltages and nonvolatile semiconductor memory device comprising the same
JP2000173289A (ja) 1998-12-10 2000-06-23 Toshiba Corp エラー訂正可能なフラッシュメモリシステム
TW475267B (en) 1999-07-13 2002-02-01 Toshiba Corp Semiconductor memory
WO2002050843A1 (fr) 2000-12-21 2002-06-27 Fujitsu Limited Memoire a semi-conducteurs non volatile et procede d'effacement
JP2002279788A (ja) * 2001-03-16 2002-09-27 Toshiba Corp 不揮発性半導体メモリ
US6493266B1 (en) 2001-04-09 2002-12-10 Advanced Micro Devices, Inc. Soft program and soft program verify of the core cells in flash memory array
US6522580B2 (en) 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
US6456528B1 (en) 2001-09-17 2002-09-24 Sandisk Corporation Selective operation of a multi-state non-volatile memory system in a binary mode
US6542407B1 (en) * 2002-01-18 2003-04-01 Sandisk Corporation Techniques of recovering data from memory cells affected by field coupling with adjacent memory cells
US6799256B2 (en) * 2002-04-12 2004-09-28 Advanced Micro Devices, Inc. System and method for multi-bit flash reads using dual dynamic references
EP1514309B1 (en) 2002-06-19 2013-11-27 SanDisk Technologies Inc. Deep wordline trench to shield cross coupling between adjacent cells of nand memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI832532B (zh) * 2007-09-14 2024-02-11 日商鎧俠股份有限公司 Ｉｃ封裝

Also Published As

Publication number Publication date
ATE356410T1 (de) 2007-03-15
EP1652191A1 (en) 2006-05-03
CN1853240A (zh) 2006-10-25
DE602004005211T8 (de) 2008-05-15
JP4680904B2 (ja) 2011-05-11
DE602004005211D1 (de) 2007-04-19
CN100474453C (zh) 2009-04-01
KR101049582B1 (ko) 2011-07-15
WO2005013283A1 (en) 2005-02-10
KR20060114319A (ko) 2006-11-06
EP1652191B1 (en) 2007-03-07
TW200518104A (en) 2005-06-01
JP2007500412A (ja) 2007-01-11
US6914823B2 (en) 2005-07-05
DE602004005211T2 (de) 2007-11-08
US20050024943A1 (en) 2005-02-03

Similar Documents

Publication Publication Date Title
TWI264012B (en) Detecting over programmed memory after further programming
TW200509136A (en) Detecting over programmed memory
TW200707189A (en) Memory block erasing in a flash memory device
TW200701237A (en) Reference scheme for a non-volatile semiconductor memory device
TW200737211A (en) An programmable non-volatile memory device of lowing program margin needed for user program operation and method for testing the same
DE60321138D1 (de) Direktzugriffsspeicher mit programmierbaren leitern und verfahren zu seinem lesen
WO2007078885A3 (en) Multi-level memory cell sensing
TW200710857A (en) Programming memory devices
ATE548734T1 (de) Pcram-umschreibeverhinderung
TW200620311A (en) Self-adaptive program delay circuitry for programmable memories
ATE490540T1 (de) Variable programmierung von nicht-flüchtigem speicher
WO2008008466A3 (en) Current sensing for flash
TW200614388A (en) Bitline implant utilizing dual poly
WO2007111688A3 (en) Method and apparatus for programming/erasing a non-volatile memory
HK1046983A1 (en) Reference cell for high speed sensing in non-volatile memories.
TW200802806A (en) Semiconductor device and manufacturing method thereof
CA2554829A1 (en) System and method for detecting the width of a data bus
DE60217463D1 (de) Nichtflüchtige ferroelektrische Zweitransistor-Speicherzelle
SG151220A1 (en) Method and device for irreversibly programming and reading nonvolatile memory cells
TW200721175A (en) Method of writing to non-volatile semiconductor memory device storing information depending on variation in level of threshold voltage
US6651032B2 (en) Setting data retention thresholds in charge-based memory
TW200731266A (en) Sensing scheme for a non-volatile semiconductor memory cell
TW200641894A (en) Method of reading the bits of nitride read-only memory cell
TW200723284A (en) Non-valatile memory device and integrated circuit
TW200721158A (en) Flash memory programming using an indication bit to interpret state

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees