ATE356410T1 - Detektieren von über-programmierten speicherzellen nach dem programmieren von benachbarten speicherzellen - Google Patents

Detektieren von über-programmierten speicherzellen nach dem programmieren von benachbarten speicherzellen

Info

Publication number
ATE356410T1
ATE356410T1 AT04756719T AT04756719T ATE356410T1 AT E356410 T1 ATE356410 T1 AT E356410T1 AT 04756719 T AT04756719 T AT 04756719T AT 04756719 T AT04756719 T AT 04756719T AT E356410 T1 ATE356410 T1 AT E356410T1
Authority
AT
Austria
Prior art keywords
memory cells
programmed
detecting over
memory
programming
Prior art date
Application number
AT04756719T
Other languages
German (de)
English (en)
Inventor
Jian Chen
Yan Li
Jeffrey W Lutze
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE356410T1 publication Critical patent/ATE356410T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
AT04756719T 2003-07-29 2004-07-07 Detektieren von über-programmierten speicherzellen nach dem programmieren von benachbarten speicherzellen ATE356410T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/628,962 US6914823B2 (en) 2003-07-29 2003-07-29 Detecting over programmed memory after further programming

Publications (1)

Publication Number Publication Date
ATE356410T1 true ATE356410T1 (de) 2007-03-15

Family

ID=34103497

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04756719T ATE356410T1 (de) 2003-07-29 2004-07-07 Detektieren von über-programmierten speicherzellen nach dem programmieren von benachbarten speicherzellen

Country Status (9)

Country Link
US (1) US6914823B2 (enExample)
EP (1) EP1652191B1 (enExample)
JP (1) JP4680904B2 (enExample)
KR (1) KR101049582B1 (enExample)
CN (1) CN100474453C (enExample)
AT (1) ATE356410T1 (enExample)
DE (1) DE602004005211T8 (enExample)
TW (1) TWI264012B (enExample)
WO (1) WO2005013283A1 (enExample)

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US8422305B2 (en) * 2009-06-29 2013-04-16 Hynix Semiconductor Inc. Method of programming nonvolatile memory device
US8423866B2 (en) * 2009-10-28 2013-04-16 SanDisk Technologies, Inc. Non-volatile memory and method with post-write read and adaptive re-write to manage errors
US8214700B2 (en) 2009-10-28 2012-07-03 Sandisk Technologies Inc. Non-volatile memory and method with post-write read and adaptive re-write to manage errors
US8634240B2 (en) 2009-10-28 2014-01-21 SanDisk Technologies, Inc. Non-volatile memory and method with accelerated post-write read to manage errors
KR101082692B1 (ko) * 2009-12-31 2011-11-15 주식회사 하이닉스반도체 반도체 메모리 장치 및 이의 프로그램 방법
US8514630B2 (en) 2010-07-09 2013-08-20 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays: current based approach
US8305807B2 (en) 2010-07-09 2012-11-06 Sandisk Technologies Inc. Detection of broken word-lines in memory arrays
US8432732B2 (en) 2010-07-09 2013-04-30 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays
US8379454B2 (en) 2011-05-05 2013-02-19 Sandisk Technologies Inc. Detection of broken word-lines in memory arrays
KR20130008300A (ko) * 2011-07-12 2013-01-22 삼성전자주식회사 오버 프로그램을 이용하여 소거 동작을 수행하는 플래시 메모리 장치 및 그 동작방법
US8880977B2 (en) 2011-07-22 2014-11-04 Sandisk Technologies Inc. Systems and methods of storing data
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US20130031431A1 (en) 2011-07-28 2013-01-31 Eran Sharon Post-Write Read in Non-Volatile Memories Using Comparison of Data as Written in Binary and Multi-State Formats
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US8842476B2 (en) 2011-11-09 2014-09-23 Sandisk Technologies Inc. Erratic program detection for non-volatile storage
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US9135989B2 (en) 2012-09-06 2015-09-15 Sandisk Technologies Inc. Write data preservation for non-volatile storage
US9053810B2 (en) 2013-03-08 2015-06-09 Sandisk Technologies Inc. Defect or program disturb detection with full data recovery capability
US9213601B2 (en) 2013-12-03 2015-12-15 Sandisk Technologies Inc. Adaptive data re-compaction after post-write read verification operations
KR102356072B1 (ko) * 2015-09-10 2022-01-27 에스케이하이닉스 주식회사 메모리 시스템 및 그 동작 방법
US10249382B2 (en) 2017-08-22 2019-04-02 Sandisk Technologies Llc Determination of fast to program word lines in non-volatile memory
KR102612891B1 (ko) * 2018-05-31 2023-12-13 에스케이하이닉스 주식회사 메모리 장치, 그것의 동작방법 및 메모리 시스템
US11545221B2 (en) 2018-06-29 2023-01-03 Sandisk Technologies Llc Concurrent programming of multiple cells for non-volatile memory devices
US10978156B2 (en) 2018-06-29 2021-04-13 Sandisk Technologies Llc Concurrent programming of multiple cells for non-volatile memory devices
US10839928B1 (en) 2019-05-16 2020-11-17 Sandisk Technologies Llc Non-volatile memory with countermeasure for over programming
US11081198B2 (en) 2019-05-16 2021-08-03 Sandisk Technologies Llc Non-volatile memory with countermeasure for over programming

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Also Published As

Publication number Publication date
WO2005013283A1 (en) 2005-02-10
US20050024943A1 (en) 2005-02-03
KR20060114319A (ko) 2006-11-06
CN1853240A (zh) 2006-10-25
EP1652191A1 (en) 2006-05-03
JP2007500412A (ja) 2007-01-11
DE602004005211T8 (de) 2008-05-15
DE602004005211D1 (de) 2007-04-19
TW200518104A (en) 2005-06-01
US6914823B2 (en) 2005-07-05
KR101049582B1 (ko) 2011-07-15
CN100474453C (zh) 2009-04-01
TWI264012B (en) 2006-10-11
EP1652191B1 (en) 2007-03-07
JP4680904B2 (ja) 2011-05-11
DE602004005211T2 (de) 2007-11-08

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