JP4680904B2 - 隣接するメモリセルのプログラミングの後にオーバー・プログラミングされたメモリセルを検出する技術 - Google Patents

隣接するメモリセルのプログラミングの後にオーバー・プログラミングされたメモリセルを検出する技術 Download PDF

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Publication number
JP4680904B2
JP4680904B2 JP2006521858A JP2006521858A JP4680904B2 JP 4680904 B2 JP4680904 B2 JP 4680904B2 JP 2006521858 A JP2006521858 A JP 2006521858A JP 2006521858 A JP2006521858 A JP 2006521858A JP 4680904 B2 JP4680904 B2 JP 4680904B2
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Prior art keywords
state storage
programming
storage element
control line
over
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Japanese (ja)
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JP2007500412A5 (enExample
JP2007500412A (ja
Inventor
チェン、ジアン
リ、ヤン
ダブリュー． ルッツェ、ジェフリー
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SanDisk Corp
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SanDisk Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells

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  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2006521858A 2003-07-29 2004-07-07 隣接するメモリセルのプログラミングの後にオーバー・プログラミングされたメモリセルを検出する技術 Expired - Fee Related JP4680904B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/628,962 US6914823B2 (en) 2003-07-29 2003-07-29 Detecting over programmed memory after further programming
PCT/US2004/021699 WO2005013283A1 (en) 2003-07-29 2004-07-07 Detecting over programmed memory cells after programming of adjacent memory cells

Publications (3)

Publication Number Publication Date
JP2007500412A JP2007500412A (ja) 2007-01-11
JP2007500412A5 JP2007500412A5 (enExample) 2007-05-24
JP4680904B2 true JP4680904B2 (ja) 2011-05-11

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JP2006521858A Expired - Fee Related JP4680904B2 (ja) 2003-07-29 2004-07-07 隣接するメモリセルのプログラミングの後にオーバー・プログラミングされたメモリセルを検出する技術

Country Status (9)

Country Link
US (1) US6914823B2 (enExample)
EP (1) EP1652191B1 (enExample)
JP (1) JP4680904B2 (enExample)
KR (1) KR101049582B1 (enExample)
CN (1) CN100474453C (enExample)
AT (1) ATE356410T1 (enExample)
DE (1) DE602004005211T8 (enExample)
TW (1) TWI264012B (enExample)
WO (1) WO2005013283A1 (enExample)

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KR101414494B1 (ko) * 2008-03-17 2014-07-04 삼성전자주식회사 메모리 장치 및 메모리 데이터 읽기 방법
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KR101069004B1 (ko) * 2008-08-01 2011-09-29 주식회사 하이닉스반도체 플래시 메모리 소자의 프로그램 방법
KR101124126B1 (ko) * 2009-06-29 2012-03-22 주식회사 하이닉스반도체 불휘발성 메모리 소자의 프로그램 방법
US8422305B2 (en) * 2009-06-29 2013-04-16 Hynix Semiconductor Inc. Method of programming nonvolatile memory device
US8423866B2 (en) * 2009-10-28 2013-04-16 SanDisk Technologies, Inc. Non-volatile memory and method with post-write read and adaptive re-write to manage errors
US8214700B2 (en) 2009-10-28 2012-07-03 Sandisk Technologies Inc. Non-volatile memory and method with post-write read and adaptive re-write to manage errors
US8634240B2 (en) 2009-10-28 2014-01-21 SanDisk Technologies, Inc. Non-volatile memory and method with accelerated post-write read to manage errors
KR101082692B1 (ko) * 2009-12-31 2011-11-15 주식회사 하이닉스반도체 반도체 메모리 장치 및 이의 프로그램 방법
US8514630B2 (en) 2010-07-09 2013-08-20 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays: current based approach
US8305807B2 (en) 2010-07-09 2012-11-06 Sandisk Technologies Inc. Detection of broken word-lines in memory arrays
US8432732B2 (en) 2010-07-09 2013-04-30 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays
US8379454B2 (en) 2011-05-05 2013-02-19 Sandisk Technologies Inc. Detection of broken word-lines in memory arrays
KR20130008300A (ko) * 2011-07-12 2013-01-22 삼성전자주식회사 오버 프로그램을 이용하여 소거 동작을 수행하는 플래시 메모리 장치 및 그 동작방법
US8880977B2 (en) 2011-07-22 2014-11-04 Sandisk Technologies Inc. Systems and methods of storing data
US8750042B2 (en) 2011-07-28 2014-06-10 Sandisk Technologies Inc. Combined simultaneous sensing of multiple wordlines in a post-write read (PWR) and detection of NAND failures
US8726104B2 (en) 2011-07-28 2014-05-13 Sandisk Technologies Inc. Non-volatile memory and method with accelerated post-write read using combined verification of multiple pages
US20130031431A1 (en) 2011-07-28 2013-01-31 Eran Sharon Post-Write Read in Non-Volatile Memories Using Comparison of Data as Written in Binary and Multi-State Formats
US8775901B2 (en) 2011-07-28 2014-07-08 SanDisk Technologies, Inc. Data recovery for defective word lines during programming of non-volatile memory arrays
US8630118B2 (en) 2011-11-09 2014-01-14 Sandisk Technologies Inc. Defective word line detection
US8842476B2 (en) 2011-11-09 2014-09-23 Sandisk Technologies Inc. Erratic program detection for non-volatile storage
US8566671B1 (en) 2012-06-29 2013-10-22 Sandisk Technologies Inc. Configurable accelerated post-write read to manage errors
US9135989B2 (en) 2012-09-06 2015-09-15 Sandisk Technologies Inc. Write data preservation for non-volatile storage
US9053810B2 (en) 2013-03-08 2015-06-09 Sandisk Technologies Inc. Defect or program disturb detection with full data recovery capability
US9213601B2 (en) 2013-12-03 2015-12-15 Sandisk Technologies Inc. Adaptive data re-compaction after post-write read verification operations
KR102356072B1 (ko) * 2015-09-10 2022-01-27 에스케이하이닉스 주식회사 메모리 시스템 및 그 동작 방법
US10249382B2 (en) 2017-08-22 2019-04-02 Sandisk Technologies Llc Determination of fast to program word lines in non-volatile memory
KR102612891B1 (ko) * 2018-05-31 2023-12-13 에스케이하이닉스 주식회사 메모리 장치, 그것의 동작방법 및 메모리 시스템
US11545221B2 (en) 2018-06-29 2023-01-03 Sandisk Technologies Llc Concurrent programming of multiple cells for non-volatile memory devices
US10978156B2 (en) 2018-06-29 2021-04-13 Sandisk Technologies Llc Concurrent programming of multiple cells for non-volatile memory devices
US10839928B1 (en) 2019-05-16 2020-11-17 Sandisk Technologies Llc Non-volatile memory with countermeasure for over programming
US11081198B2 (en) 2019-05-16 2021-08-03 Sandisk Technologies Llc Non-volatile memory with countermeasure for over programming

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Also Published As

Publication number Publication date
ATE356410T1 (de) 2007-03-15
WO2005013283A1 (en) 2005-02-10
US20050024943A1 (en) 2005-02-03
KR20060114319A (ko) 2006-11-06
CN1853240A (zh) 2006-10-25
EP1652191A1 (en) 2006-05-03
JP2007500412A (ja) 2007-01-11
DE602004005211T8 (de) 2008-05-15
DE602004005211D1 (de) 2007-04-19
TW200518104A (en) 2005-06-01
US6914823B2 (en) 2005-07-05
KR101049582B1 (ko) 2011-07-15
CN100474453C (zh) 2009-04-01
TWI264012B (en) 2006-10-11
EP1652191B1 (en) 2007-03-07
DE602004005211T2 (de) 2007-11-08

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