JP2005259768A - 発光素子およびその製造方法 - Google Patents
発光素子およびその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 253
- 239000000758 substrate Substances 0.000 claims abstract description 162
- 150000004767 nitrides Chemical class 0.000 abstract description 177
- 239000010410 layer Substances 0.000 description 584
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- 238000000034 method Methods 0.000 description 49
- 229910004298 SiO 2 Inorganic materials 0.000 description 44
- 238000005253 cladding Methods 0.000 description 42
- 238000000605 extraction Methods 0.000 description 35
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 229910052594 sapphire Inorganic materials 0.000 description 20
- 239000010980 sapphire Substances 0.000 description 20
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- 239000007789 gas Substances 0.000 description 16
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- 238000005530 etching Methods 0.000 description 15
- 238000002955 isolation Methods 0.000 description 14
- 239000010419 fine particle Substances 0.000 description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 11
- 230000007423 decrease Effects 0.000 description 11
- 238000000926 separation method Methods 0.000 description 11
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- 239000002019 doping agent Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 229910015363 Au—Sn Inorganic materials 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000013256 coordination polymer Substances 0.000 description 3
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- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000000644 propagated effect Effects 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
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- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910002677 Pd–Sn Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- -1 thallium nitride Chemical class 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
【解決手段】この発光素子は、光出射面11とは反対側に設置された導電性の支持基板1と、支持基板1に接合され、光出射面11に対して所定の角度傾斜した側面9aを有する窒化物系半導体素子層9とを備えている。
【選択図】図1
Description
図1は、本発明の第1実施形態による窒化物系半導体発光ダイオード素子の構造を示した断面図である。まず、図1を参照して、第1実施形態による窒化物系半導体発光ダイオード素子の構造について説明する。なお、図1の素子中の矢印は、光の経路を示している。
図9は、本発明の第2実施形態による窒化物系半導体発光ダイオード素子の構造を示した断面図である。図9を参照して、この第2実施形態では、上記第1実施形態と異なり、窒化物系半導体素子層の傾斜した側面と光出射面とがなす角度を鋭角にするとともに、窒化物系半導体素子層の傾斜した側面に側面反射膜を設ける場合について説明する。なお、図9の素子中の矢印は、光の経路を示している。
図19は、本発明の第3実施形態による窒化物系半導体発光ダイオード素子の構造を示した断面図である。図19を参照して、この第3実施形態では、上記第1および第2実施形態と異なり、窒化物系半導体素子層の傾斜した側面と光出射面とがなす角度を鈍角にするとともに、光出射面を凹凸形状に形成する場合について説明する。なお、図19の素子中の矢印は、光の経路を示している。
図27は、本発明の第4実施形態による窒化物系半導体発光ダイオード素子の構造を示した断面図である。図27を参照して、この第4実施形態では、上記第1〜第3実施形態と異なり、窒化物系半導体素子層の傾斜した側面と光出射面とがなす角度を鋭角にするとともに、窒化物系半導体素子層の傾斜した側面に側面反射膜を設け、かつ、光出射面を凹凸形状に形成する場合について説明する。なお、図27の素子中の矢印は、光の経路を示している。
2、52 p側電極(反射膜)
9、29、59、80 窒化物系半導体素子層(半導体素子層)
9a、29a、59a、80a 側面
11、31、61、83 光出射面
12 サファイア基板(成長用基板)
22 n側電極(反射膜、側面反射膜)
32 6H−SiC基板(成長用基板)
62 Si基板(成長用基板)
72 p側電極(反射膜、側面反射膜)
84 GaN基板(成長用基板)
Claims (6)
- 光出射面とは反対側に設置された支持基板と、
前記支持基板に接合され、少なくとも前記光出射面に対して所定の角度傾斜した側面を有する半導体素子層とを備えた、発光素子。 - 前記光出射面と前記半導体素子層の前記側面とがなす角度は、鈍角である、請求項1に記載の発光素子。
- 前記半導体素子層の前記所定の角度傾斜した側面に沿って延びるように形成された側面反射膜をさらに備える、請求項1に記載の発光素子。
- 少なくとも前記支持基板と前記半導体素子層との間に設けられた反射膜をさらに備える、請求項1〜3のいずれか1項に記載の発光素子。
- 前記光出射面は、凹凸形状に形成されている、請求項1〜4のいずれか1項に記載の発光素子。
- 成長用基板上に、少なくとも光出射面に対して所定の角度傾斜した側面を有する半導体素子層を形成する工程と、
前記光出射面とは反対側に支持基板を設置する工程と、
前記支持基板に、前記半導体素子層を接合する工程と、
前記成長用基板を除去する工程とを備えた、発光素子の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004065489A JP4868709B2 (ja) | 2004-03-09 | 2004-03-09 | 発光素子 |
US11/059,508 US7968897B2 (en) | 2004-03-09 | 2005-02-17 | Light-emitting device having a support substrate and inclined sides |
CN201010159427.8A CN101834250B (zh) | 2004-03-09 | 2005-02-21 | 发光元件的制造方法 |
CN201010159429A CN101853910A (zh) | 2004-03-09 | 2005-02-21 | 发光元件 |
CN2005100084703A CN1667846B (zh) | 2004-03-09 | 2005-02-21 | 发光元件及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004065489A JP4868709B2 (ja) | 2004-03-09 | 2004-03-09 | 発光素子 |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009114830A Division JP5350070B2 (ja) | 2009-05-11 | 2009-05-11 | 発光素子 |
JP2010019899A Division JP4509217B2 (ja) | 2010-02-01 | 2010-02-01 | 発光素子の製造方法 |
JP2010187845A Division JP2010263251A (ja) | 2010-08-25 | 2010-08-25 | 発光素子およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005259768A true JP2005259768A (ja) | 2005-09-22 |
JP4868709B2 JP4868709B2 (ja) | 2012-02-01 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004065489A Expired - Lifetime JP4868709B2 (ja) | 2004-03-09 | 2004-03-09 | 発光素子 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7968897B2 (ja) |
JP (1) | JP4868709B2 (ja) |
CN (3) | CN1667846B (ja) |
Cited By (33)
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Also Published As
Publication number | Publication date |
---|---|
US7968897B2 (en) | 2011-06-28 |
CN1667846A (zh) | 2005-09-14 |
CN101853910A (zh) | 2010-10-06 |
US20050199885A1 (en) | 2005-09-15 |
JP4868709B2 (ja) | 2012-02-01 |
CN101834250A (zh) | 2010-09-15 |
CN1667846B (zh) | 2010-06-02 |
CN101834250B (zh) | 2014-04-02 |
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