JP2009060008A - 半導体素子、エピタキシャルウエハおよびそれらの製造方法 - Google Patents
半導体素子、エピタキシャルウエハおよびそれらの製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000001257 hydrogen Substances 0.000 claims abstract description 104
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 104
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 98
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 45
- 238000010438 heat treatment Methods 0.000 claims abstract description 28
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 20
- 230000001681 protective effect Effects 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract description 62
- 238000006356 dehydrogenation reaction Methods 0.000 description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 23
- 238000009826 distribution Methods 0.000 description 19
- 210000004027 cell Anatomy 0.000 description 14
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 125000004429 atom Chemical group 0.000 description 9
- 239000002994 raw material Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 210000004180 plasmocyte Anatomy 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910004541 SiN Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Abstract
【解決手段】InP基板1上にN含有InGaAs系層3をMBE法で成長させ、その後、600℃以上800℃未満の熱処理を施し、上記の熱処理により、N含有InGaAs系層3の平均水素濃度を2×1017個/cm3以下とする。
【選択図】図1
Description
Beam Epitaxy)法でエピタキシャル成長させ、その後、600℃以上800℃未満の熱処理を施す。そして、上記の熱処理により、上記のGa1−xInxNyAs1−y−zSbz層またはGa1−xInxNyAs1−y−zPz層の平均水素濃度を2×1017個/cm3以下とすることを特徴とする。ここで、Ga1−xInxNyAs1−y−zSbz層(0.4≦x≦0.8、0<y≦0.1、0≦z≦0.1)またはGa1−xInxNyAs1−y−zPz層(0.4≦x≦0.8、0<y≦0.1、0≦z≦0.1)を、以後、N含有InGaAs系層と記す。
図1は、本発明の実施の形態1における半導体素子の積層構造体10を示す断面図である。この積層構造体10は、つぎのような化合物半導体層で形成されている。なお、エピタキシャルウエハは上記積層構造体を含む半導体素子を形成する前段階の中間製品と位置づけられ、エピタキシャルウエハ単独で、市販されるものである。以後の化合物半導体層の説明において、半導体素子という場合、エピタキシャルウエハも含まれているものと解釈する。
積層構造体10:(InP基板1/InGaAsバッファ層2/GaInNAs受光層3/AlInAs窓層4)
各層の厚みは、大雑把に、InGaAsバッファ層2は1μm〜2μm程度、N含有InGaAs系層であるGaInNAs受光層3は2μm〜3μm、AlInAs窓層4は0.5μm〜1.5μmである。半導体受光素子をフォトダイオードとする場合には、AlInAs窓層4上にマスクパターンを設け、p型不純物をAlInAs窓層4を通して、GaInNAs受光層3に届くように導入して、pn接合またはpin接合を形成する。その後、AlInAs窓層4のp型領域上にp部電極を、またInP基板1またはInGaAsバッファ層2にオーミック接続するn部電極を形成する。
(1)N含有InGaAs系受光層の下地バッファ層を形成した後、N含有InGaAs受光層を形成するための各セルを作動開始させ、各セルから出射される分子線を基板シャッタで受けて、所定時間経過させる。これによって、成長初期の分子線は基板シャッタで遮られて、下地バッファ層を含む積層構造体に到達しない。所定時間経過後に、基板シャッタを開状態にすることにより、水素濃度の低い、フラット濃度部分に相当する分子線を最初の成長から寄与させることができる。この操作には、しかしながら、下地バッファ層は、形成された後、時間が経過すると表面に凹凸ができ、欠陥密度増大の原因になるという短所がある。
(2)N含有InGaAs系受光層の初期における成長速度を遅くする。(2)の操作では、基本的に、N含有InGaAs系受光層の各構成元素のセルのシャッタを、短時間ピッチで開閉しながら成長させる。そして、成長初期段階では、協働して各セルとも、閉状態時間の開状態時間に対する割合を大きくして、成長速度を極力遅くする。これにより、成長初期の水素を高濃度に含む部分の多くは、各セルシャッタに遮られて、水素高濃度層3aの厚みはより薄くされる。この操作(2)によって、水素高濃度層の厚み制御が可能である。
(本発明例):積層構造10の各層は、MBE法によって成膜した。まずInP基板1にInGaAsバッファ層2を厚み1.5μmにエピタキシャル成長させる。InGaAsバッファ層2成長の時、Siをドーピングしてキャリア濃度5×1016個/cm3のn導電型とした。次に、GaInNAs受光層3を、厚み2.5μmにエピタキシャル成長させた。成長温度は500℃とした。III族元素の組成は、Ga46%、In54%とし、V族元素はAs98.5%、残部Nとした。ドーピングはしていない。次に、AlInAs窓層4をエピタキシャル成長させた。このGaInNAs受光層3の成長の際、水素高濃度層3aを下面から0.5μm以下の厚み範囲に限定するように、原料および成長条件を選択した。III族元素は、In52%、残部Alとした。この後、RTA(Rapid Thermal Annealing)によって660℃×1分間の脱水素熱処理を行った。
(比較例1)
比較例1は、本発明例と同じ積層構造をMBE法によって形成した。ただし、InGaAsバッファ層については、ドーピングをせず、厚みを0.15μmとした。そして、本発明例との根本的な相違点は、MBE法で積層構造を形成したままで、脱水素の熱処理を行っていないことである。
(比較例2)
比較例2では、本発明例と同じ積層構造をOMVPE(Organometallic Vapor Phase Epitaxy)法で形成した。そして、積層構造を形成したままで、脱水素熱処理は行っていない。
Claims (12)
- InP基板上にGa1−xInxNyAs1−y−zSbz層(0.4≦x≦0.8、0<y≦0.1、0≦z≦0.1)またはGa1−xInxNyAs1−y−zPz層(0.4≦x≦0.8、0<y≦0.1、0≦z≦0.1)をMBE(Molecular Beam Epitaxy)法でエピタキシャル成長させる工程と、
前記エピタキシャル成長工程の後、600℃以上800℃未満の熱処理を施す工程とを備え、
前記Ga1−xInxNyAs1−y−zSbz層またはGa1−xInxNyAs1−y−zPz層の平均水素濃度を2×1017個/cm3以下とすることを特徴とする、半導体素子の製造方法。 - 前記熱処理により、前記Ga1−xInxNyAs1−y−zSbz層またはGa1−xInxNyAs1−y−zPz層の、下地との界面から当該Ga1−xInxNyAs1−y−zSbz層内またはGa1−xInxNyAs1−y−zPz層内、0.5μm以下の厚み範囲に限って、水素濃度のピーク値2×1018個/cm3以下の水素高濃度層とすることを特徴とする、請求項1に記載の半導体素子の製造方法。
- 前記熱処理の前に、前記InP基板の裏面で脱リンが生じないように、当該InP基板裏面に保護膜を形成することを特徴とする、請求項1または2に記載の半導体素子の製造方法。
- 前記Ga1−xInxNyAs1−y−zSbz層またはGa1−xInxNyAs1−y−zPz層をエピタキシャル成長させた上にInP窓層を形成した後、前記熱処理を施す際、雰囲気中にPを含むガスを流すことを特徴とする、請求項1または2に記載の半導体素子の製造方法。
- InP基板と、
前記InP基板上にエピタキシャル成長した、Ga1−xInxNyAs1−y−zSbz層(0.4≦x≦0.8、0<y≦0.1、0≦z≦0.1)またはGa1−xInxNyAs1−y−zPz層(0.4≦x≦0.8、0<y≦0.1、0≦z≦0.1)とを備え、
前記Ga1−xInxNyAs1−y−zSbz層またはGa1−xInxNyAs1−y−zPz層の平均水素濃度が2×1017個/cm3以下であることを特徴とする、半導体素子。 - InP基板と、
前記InP基板上にエピタキシャル成長した、Ga1−xInxNyAs1−y−zSbz層(0.4≦x≦0.8、0<y≦0.1、0≦z≦0.1)またはGa1−xInxNyAs1−y−zPz層(0.4≦x≦0.8、0<y≦0.1、0≦z≦0.1)とを備え、
前記Ga1−xInxNyAs1−y−zSbz層またはGa1−xInxNyAs1−y−zPz層の、下地との界面から当該Ga1−xInxNyAs1−y−zSbz層内またはGa1−xInxNyAs1−y−zPz層内、0.5μm以下の厚み範囲に限られて、水素濃度のピーク値2×1018個/cm3以下の水素高濃度層を備えることを特徴とする、半導体素子。 - 前記InP基板と、前記Ga1−xInxNyAs1−y−zSbz層またはGa1−xInxNyAs1−y−zPz層との間に、n型半導体のバッファ層を備えることを特徴とする、請求項5または6に記載の半導体素子。
- 前記バッファ層のキャリア濃度が、1×1016個/cm3以上であることを特徴とする、請求項7に記載の半導体素子。
- 前記半導体素子が、フォトダイオードであることを特徴とする、請求項5〜8のいずれかひとつに記載の半導体素子。
- InP基板上にGa1−xInxNyAs1−y−zSbz層(0.4≦x≦0.8、0<y≦0.1、0≦z≦0.1)またはGa1−xInxNyAs1−y−zPz層(0.4≦x≦0.8、0<y≦0.1、0≦z≦0.1)をMBE(Molecular Beam Epitaxy)法でエピタキシャル成長させる工程と、
前記エピタキシャル成長工程の後、600℃以上800℃未満の熱処理を施す工程とを備え、
前記Ga1−xInxNyAs1−y−zSbz層またはGa1−xInxNyAs1−y−zPz層の平均水素濃度を2×1017個/cm3以下とすることを特徴とする、エピタキシャルウエハの製造方法。 - InP基板と、
前記InP基板上にエピタキシャル成長した、Ga1−xInxNyAs1−y−zSbz層(0.4≦x≦0.8、0<y≦0.1、0≦z≦0.1)またはGa1−xInxNyAs1−y−zPz層(0.4≦x≦0.8、0<y≦0.1、0≦z≦0.1)とを備え、
前記Ga1−xInxNyAs1−y−zSbz層またはGa1−xInxNyAs1−y−zPz層の平均水素濃度が2×1017個/cm3以下であることを特徴とする、エピタキシャルウエハ。 - InP基板と、
前記InP基板上にエピタキシャル成長した、Ga1−xInxNyAs1−y−zSbz層(0.4≦x≦0.8、0<y≦0.1、0≦z≦0.1)またはGa1−xInxNyAs1−y−zPz層(0.4≦x≦0.8、0<y≦0.1、0≦z≦0.1)とを備え、
前記Ga1−xInxNyAs1−y−zSbz層またはGa1−xInxNyAs1−y−zPz層の、下地との界面から当該Ga1−xInxNyAs1−y−zSbz層内またはGa1−xInxNyAs1−y−zPz層内、0.5μm以下の厚み範囲に限られて、水素濃度のピーク値2×1018個/cm3以下の水素高濃度層を備えることを特徴とする、エピタキシャルウエハ。
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---|---|---|---|---|
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US10930808B2 (en) | 2017-07-06 | 2021-02-23 | Array Photonics, Inc. | Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar cells |
EP3669402A1 (en) | 2017-09-27 | 2020-06-24 | Array Photonics, Inc. | Short wavelength infrared optoelectronic devices having a dilute nitride layer |
EP3939085A1 (en) | 2019-03-11 | 2022-01-19 | Array Photonics, Inc. | Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions |
CN112233966A (zh) * | 2020-10-14 | 2021-01-15 | 中国电子科技集团公司第四十四研究所 | InGaAs到InP界面生长的气流切换方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02272739A (ja) * | 1989-04-14 | 1990-11-07 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体の熱処理法 |
JPH07215794A (ja) * | 1994-02-04 | 1995-08-15 | Fujitsu Ltd | 分子線源用セルと分子線結晶成長方法 |
JPH11274083A (ja) * | 1998-03-24 | 1999-10-08 | Sumitomo Electric Ind Ltd | 化合物半導体装置およびその製造方法 |
JP2004363243A (ja) * | 2003-06-03 | 2004-12-24 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
JP2005086135A (ja) * | 2003-09-11 | 2005-03-31 | Nippon Telegr & Teleph Corp <Ntt> | ヘテロバイポーラトランジスタ用エピタキシャルウエハおよびその製造方法 |
JP2005259768A (ja) * | 2004-03-09 | 2005-09-22 | Sanyo Electric Co Ltd | 発光素子およびその製造方法 |
JP2007184409A (ja) * | 2006-01-06 | 2007-07-19 | Sumitomo Electric Ind Ltd | 半導体受光素子およびその製造方法 |
JP2007207929A (ja) * | 2006-01-31 | 2007-08-16 | Sumitomo Electric Ind Ltd | Iii−v化合物半導体光装置を作製する方法 |
-
2007
- 2007-09-03 JP JP2007227648A patent/JP5417694B2/ja active Active
-
2008
- 2008-09-02 US US12/202,460 patent/US20090057721A1/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02272739A (ja) * | 1989-04-14 | 1990-11-07 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体の熱処理法 |
JPH07215794A (ja) * | 1994-02-04 | 1995-08-15 | Fujitsu Ltd | 分子線源用セルと分子線結晶成長方法 |
JPH11274083A (ja) * | 1998-03-24 | 1999-10-08 | Sumitomo Electric Ind Ltd | 化合物半導体装置およびその製造方法 |
JP2004363243A (ja) * | 2003-06-03 | 2004-12-24 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法 |
JP2005086135A (ja) * | 2003-09-11 | 2005-03-31 | Nippon Telegr & Teleph Corp <Ntt> | ヘテロバイポーラトランジスタ用エピタキシャルウエハおよびその製造方法 |
JP2005259768A (ja) * | 2004-03-09 | 2005-09-22 | Sanyo Electric Co Ltd | 発光素子およびその製造方法 |
JP2007184409A (ja) * | 2006-01-06 | 2007-07-19 | Sumitomo Electric Ind Ltd | 半導体受光素子およびその製造方法 |
JP2007207929A (ja) * | 2006-01-31 | 2007-08-16 | Sumitomo Electric Ind Ltd | Iii−v化合物半導体光装置を作製する方法 |
Non-Patent Citations (2)
Title |
---|
JPN6013015622; Gupta, J.A., et al.: '"Compositional control in molecular beam epitaxy growth of GaNyAs1-y on GaAs (0 0 1) using an Ar/N2' Journal of Crystal Growth Vol. 242, No. 1-2, 200207, pp. 141-154 * |
JPN7012003089; Fu, J.-X, et al.: '"Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with phot' Journal of Vacuum Science and Technology B Vol. 22, No. 3, 200405, pp. 1463-1467 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015015476A (ja) * | 2009-08-01 | 2015-01-22 | 住友電気工業株式会社 | エピタキシャルウェハおよびその製造方法 |
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