CN1667846A - 发光元件及其制造方法 - Google Patents
发光元件及其制造方法 Download PDFInfo
- Publication number
- CN1667846A CN1667846A CNA2005100084703A CN200510008470A CN1667846A CN 1667846 A CN1667846 A CN 1667846A CN A2005100084703 A CNA2005100084703 A CN A2005100084703A CN 200510008470 A CN200510008470 A CN 200510008470A CN 1667846 A CN1667846 A CN 1667846A
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- light
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- semiconductor element
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- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 374
- 239000000758 substrate Substances 0.000 claims abstract description 177
- 239000010410 layer Substances 0.000 claims description 623
- 239000011248 coating agent Substances 0.000 claims description 82
- 238000000576 coating method Methods 0.000 claims description 82
- 230000012010 growth Effects 0.000 claims description 60
- 238000000034 method Methods 0.000 claims description 42
- 238000005530 etching Methods 0.000 claims description 23
- 239000002245 particle Substances 0.000 claims description 20
- 239000002356 single layer Substances 0.000 claims description 20
- 238000000605 extraction Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 description 156
- 229910004298 SiO 2 Inorganic materials 0.000 description 24
- 229910052751 metal Inorganic materials 0.000 description 24
- 239000002184 metal Substances 0.000 description 24
- 239000007789 gas Substances 0.000 description 22
- 229910052594 sapphire Inorganic materials 0.000 description 19
- 239000010980 sapphire Substances 0.000 description 19
- 230000004888 barrier function Effects 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 15
- 239000012535 impurity Substances 0.000 description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 13
- 229910052718 tin Inorganic materials 0.000 description 13
- 230000008859 change Effects 0.000 description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 10
- 238000000151 deposition Methods 0.000 description 10
- 230000031700 light absorption Effects 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 230000001154 acute effect Effects 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 230000009467 reduction Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 230000003993 interaction Effects 0.000 description 6
- 230000000149 penetrating effect Effects 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 229910017083 AlN Inorganic materials 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- 229910015363 Au—Sn Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000004927 fusion Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000001151 other effect Effects 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000005068 transpiration Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- -1 In-Sn 36 Chemical class 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910002677 Pd–Sn Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000171 gas-source molecular beam epitaxy Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004-065489 | 2004-03-09 | ||
JP2004065489A JP4868709B2 (ja) | 2004-03-09 | 2004-03-09 | 発光素子 |
JP2004065489 | 2004-03-09 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010159429A Division CN101853910A (zh) | 2004-03-09 | 2005-02-21 | 发光元件 |
CN201010159427.8A Division CN101834250B (zh) | 2004-03-09 | 2005-02-21 | 发光元件的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1667846A true CN1667846A (zh) | 2005-09-14 |
CN1667846B CN1667846B (zh) | 2010-06-02 |
Family
ID=34918248
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010159427.8A Active CN101834250B (zh) | 2004-03-09 | 2005-02-21 | 发光元件的制造方法 |
CN201010159429A Pending CN101853910A (zh) | 2004-03-09 | 2005-02-21 | 发光元件 |
CN2005100084703A Active CN1667846B (zh) | 2004-03-09 | 2005-02-21 | 发光元件及其制造方法 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010159427.8A Active CN101834250B (zh) | 2004-03-09 | 2005-02-21 | 发光元件的制造方法 |
CN201010159429A Pending CN101853910A (zh) | 2004-03-09 | 2005-02-21 | 发光元件 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7968897B2 (zh) |
JP (1) | JP4868709B2 (zh) |
CN (3) | CN101834250B (zh) |
Cited By (9)
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CN100463242C (zh) * | 2007-03-08 | 2009-02-18 | 鹤山丽得电子实业有限公司 | 一种增大出光面积的led制作方法 |
CN101061571B (zh) * | 2004-11-24 | 2010-05-05 | 住友化学株式会社 | 半导体层叠基板、其制造方法以及发光元件 |
CN102130051A (zh) * | 2010-01-20 | 2011-07-20 | 晶元光电股份有限公司 | 发光二极管及其制造方法 |
CN102820399A (zh) * | 2009-10-15 | 2012-12-12 | Lg伊诺特有限公司 | 半导体发光器件 |
CN104885234A (zh) * | 2013-01-08 | 2015-09-02 | 皇家飞利浦有限公司 | 用于增强的光提取效率的成形led |
US9620478B2 (en) | 2011-11-18 | 2017-04-11 | Apple Inc. | Method of fabricating a micro device transfer head |
US9831383B2 (en) | 2011-11-18 | 2017-11-28 | Apple Inc. | LED array |
US10121864B2 (en) | 2011-11-18 | 2018-11-06 | Apple Inc. | Micro device transfer head heater assembly and method of transferring a micro device |
US10297712B2 (en) | 2011-11-18 | 2019-05-21 | Apple Inc. | Micro LED display |
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US7420218B2 (en) * | 2004-03-18 | 2008-09-02 | Matsushita Electric Industrial Co., Ltd. | Nitride based LED with a p-type injection region |
JP5194334B2 (ja) * | 2004-05-18 | 2013-05-08 | 住友電気工業株式会社 | Iii族窒化物半導体デバイスの製造方法 |
US7161188B2 (en) | 2004-06-28 | 2007-01-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element |
TWI266435B (en) * | 2004-07-08 | 2006-11-11 | Sharp Kk | Nitride-based compound semiconductor light emitting device and fabricating method thereof |
JP4250576B2 (ja) * | 2004-08-24 | 2009-04-08 | 株式会社東芝 | 半導体発光素子 |
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WO2006043796A1 (en) * | 2004-10-22 | 2006-04-27 | Seoul Opto-Device Co., Ltd. | Gan compound semiconductor light emitting element and method of manufacturing the same |
JP4882351B2 (ja) * | 2004-11-24 | 2012-02-22 | 住友化学株式会社 | 半導体積層基板、その製造方法及び発光素子 |
KR20060077801A (ko) * | 2004-12-31 | 2006-07-05 | 엘지전자 주식회사 | 고출력 발광 다이오드 및 그의 제조 방법 |
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JP2007123858A (ja) * | 2005-09-29 | 2007-05-17 | Sumitomo Chemical Co Ltd | 3−5族窒化物半導体の製造方法 |
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CN205944139U (zh) | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | 紫外线发光二极管封装件以及包含此的发光二极管模块 |
JP6553541B2 (ja) * | 2016-05-11 | 2019-07-31 | 日機装株式会社 | 深紫外発光素子 |
JP6867180B2 (ja) * | 2017-02-01 | 2021-04-28 | 日機装株式会社 | 半導体発光素子の製造方法 |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6055996B2 (ja) * | 1979-12-05 | 1985-12-07 | 松下電器産業株式会社 | 電場発光半導体装置 |
US5187547A (en) * | 1988-05-18 | 1993-02-16 | Sanyo Electric Co., Ltd. | Light emitting diode device and method for producing same |
US5278433A (en) * | 1990-02-28 | 1994-01-11 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer |
JPH0429374A (ja) * | 1990-05-24 | 1992-01-31 | Omron Corp | 面出射型半導体発光素子およびその作製方法 |
JPH0442582A (ja) * | 1990-06-08 | 1992-02-13 | Eastman Kodak Japan Kk | 発光ダイオードアレイ |
JP3152708B2 (ja) * | 1991-12-12 | 2001-04-03 | 株式会社東芝 | 半導体発光素子 |
DE69329223T2 (de) * | 1992-08-05 | 2001-04-05 | Motorola Inc | Seitlich emittierende Superlumineszenzdiode |
JP2964822B2 (ja) | 1993-02-19 | 1999-10-18 | 日亜化学工業株式会社 | 発光ダイオードの製造方法 |
JP2836687B2 (ja) | 1993-04-03 | 1998-12-14 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子 |
JPH07131066A (ja) | 1993-10-30 | 1995-05-19 | Nec Corp | 発光ダイオード |
JP3259811B2 (ja) * | 1995-06-15 | 2002-02-25 | 日亜化学工業株式会社 | 窒化物半導体素子の製造方法及び窒化物半導体素子 |
JPH0992878A (ja) | 1995-09-25 | 1997-04-04 | Shin Etsu Handotai Co Ltd | 半導体発光素子及びその製造方法 |
JP3448441B2 (ja) | 1996-11-29 | 2003-09-22 | 三洋電機株式会社 | 発光装置 |
US6333522B1 (en) * | 1997-01-31 | 2001-12-25 | Matsushita Electric Industrial Co., Ltd. | Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor |
US6229160B1 (en) | 1997-06-03 | 2001-05-08 | Lumileds Lighting, U.S., Llc | Light extraction from a semiconductor light-emitting device via chip shaping |
JP3914615B2 (ja) * | 1997-08-19 | 2007-05-16 | 住友電気工業株式会社 | 半導体発光素子及びその製造方法 |
KR100683234B1 (ko) * | 1998-03-12 | 2007-02-15 | 니치아 카가쿠 고교 가부시키가이샤 | 질화물 반도체 소자 |
JP3469484B2 (ja) | 1998-12-24 | 2003-11-25 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
JP3656456B2 (ja) * | 1999-04-21 | 2005-06-08 | 日亜化学工業株式会社 | 窒化物半導体素子 |
JP5965095B2 (ja) * | 1999-12-03 | 2016-08-10 | クリー インコーポレイテッドCree Inc. | 内部および外部光学要素による光取出しを向上させた発光ダイオード |
JP2003533030A (ja) * | 2000-04-26 | 2003-11-05 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | GaNをベースとする発光ダイオードチップおよび発光ダイオード構造素子の製造法 |
EP2270875B1 (de) * | 2000-04-26 | 2018-01-10 | OSRAM Opto Semiconductors GmbH | Strahlungsmittierendes Halbleiterbauelement und dessen Herstellungsverfahren |
DE10051465A1 (de) * | 2000-10-17 | 2002-05-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis |
JP4050444B2 (ja) * | 2000-05-30 | 2008-02-20 | 信越半導体株式会社 | 発光素子及びその製造方法 |
US20020017652A1 (en) * | 2000-08-08 | 2002-02-14 | Stefan Illek | Semiconductor chip for optoelectronics |
DE10054966A1 (de) * | 2000-11-06 | 2002-05-16 | Osram Opto Semiconductors Gmbh | Bauelement für die Optoelektronik |
JP4148494B2 (ja) | 2001-12-04 | 2008-09-10 | シャープ株式会社 | 窒化物系化合物半導体発光素子およびその製造方法 |
US7323723B2 (en) * | 2001-12-28 | 2008-01-29 | Sanken Electric Co., Ltd. | Semiconductor light-emitting device using phosphors for performing wavelength conversion |
EP2105977B1 (en) | 2002-01-28 | 2014-06-25 | Nichia Corporation | Nitride semiconductor element with supporting substrate and method for producing nitride semiconductor element |
JP4107868B2 (ja) * | 2002-04-16 | 2008-06-25 | シャープ株式会社 | 窒化物系半導体発光素子の製造方法 |
JP4233268B2 (ja) | 2002-04-23 | 2009-03-04 | シャープ株式会社 | 窒化物系半導体発光素子およびその製造方法 |
JP4123830B2 (ja) * | 2002-05-28 | 2008-07-23 | 松下電工株式会社 | Ledチップ |
EP1553640A4 (en) | 2002-08-01 | 2006-09-06 | Nichia Corp | SEMICONDUCTOR LIGHT EMISSION ELEMENT, PROCESS FOR ITS MANUFACTURE AND LIGHT EMISSIONING DEVICE THEREWITH |
US7019330B2 (en) * | 2003-08-28 | 2006-03-28 | Lumileds Lighting U.S., Llc | Resonant cavity light emitting device |
JP2005085932A (ja) | 2003-09-08 | 2005-03-31 | Toyoda Gosei Co Ltd | 発光ダイオード及びその製造方法 |
-
2004
- 2004-03-09 JP JP2004065489A patent/JP4868709B2/ja not_active Expired - Lifetime
-
2005
- 2005-02-17 US US11/059,508 patent/US7968897B2/en active Active
- 2005-02-21 CN CN201010159427.8A patent/CN101834250B/zh active Active
- 2005-02-21 CN CN201010159429A patent/CN101853910A/zh active Pending
- 2005-02-21 CN CN2005100084703A patent/CN1667846B/zh active Active
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101061571B (zh) * | 2004-11-24 | 2010-05-05 | 住友化学株式会社 | 半导体层叠基板、其制造方法以及发光元件 |
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US9620478B2 (en) | 2011-11-18 | 2017-04-11 | Apple Inc. | Method of fabricating a micro device transfer head |
US9831383B2 (en) | 2011-11-18 | 2017-11-28 | Apple Inc. | LED array |
US10121864B2 (en) | 2011-11-18 | 2018-11-06 | Apple Inc. | Micro device transfer head heater assembly and method of transferring a micro device |
US10297712B2 (en) | 2011-11-18 | 2019-05-21 | Apple Inc. | Micro LED display |
US10607961B2 (en) | 2011-11-18 | 2020-03-31 | Apple Inc. | Micro device transfer head heater assembly and method of transferring a micro device |
US11552046B2 (en) | 2011-11-18 | 2023-01-10 | Apple Inc. | Micro device transfer head assembly |
CN104885234A (zh) * | 2013-01-08 | 2015-09-02 | 皇家飞利浦有限公司 | 用于增强的光提取效率的成形led |
Also Published As
Publication number | Publication date |
---|---|
CN1667846B (zh) | 2010-06-02 |
US7968897B2 (en) | 2011-06-28 |
CN101853910A (zh) | 2010-10-06 |
JP2005259768A (ja) | 2005-09-22 |
JP4868709B2 (ja) | 2012-02-01 |
CN101834250B (zh) | 2014-04-02 |
CN101834250A (zh) | 2010-09-15 |
US20050199885A1 (en) | 2005-09-15 |
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