CN1652364A - 氮化物系发光元件及其制造方法 - Google Patents
氮化物系发光元件及其制造方法 Download PDFInfo
- Publication number
- CN1652364A CN1652364A CNA2005100073569A CN200510007356A CN1652364A CN 1652364 A CN1652364 A CN 1652364A CN A2005100073569 A CNA2005100073569 A CN A2005100073569A CN 200510007356 A CN200510007356 A CN 200510007356A CN 1652364 A CN1652364 A CN 1652364A
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- Prior art keywords
- nitride
- layer
- conductive board
- semiconductor component
- based semiconductor
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 292
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 53
- 239000004065 semiconductor Substances 0.000 claims abstract description 194
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 35
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 22
- 239000011147 inorganic material Substances 0.000 claims abstract description 22
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 52
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 40
- 239000010949 copper Substances 0.000 claims description 39
- 229910052802 copper Inorganic materials 0.000 claims description 34
- 229960004643 cupric oxide Drugs 0.000 claims description 34
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- 239000007772 electrode material Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 439
- 239000000203 mixture Substances 0.000 description 21
- 239000011248 coating agent Substances 0.000 description 17
- 238000000576 coating method Methods 0.000 description 17
- 239000010931 gold Substances 0.000 description 15
- 229910052594 sapphire Inorganic materials 0.000 description 15
- 239000010980 sapphire Substances 0.000 description 15
- 229910002704 AlGaN Inorganic materials 0.000 description 13
- 230000000694 effects Effects 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 12
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- 208000037656 Respiratory Sounds Diseases 0.000 description 9
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 229910000431 copper oxide Inorganic materials 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
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- 238000000926 separation method Methods 0.000 description 4
- 244000287680 Garcinia dulcis Species 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 230000001151 other effect Effects 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910015363 Au—Sn Inorganic materials 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 241000931526 Acer campestre Species 0.000 description 1
- FOXXZZGDIAQPQI-XKNYDFJKSA-N Asp-Pro-Ser-Ser Chemical compound OC(=O)C[C@H](N)C(=O)N1CCC[C@H]1C(=O)N[C@@H](CO)C(=O)N[C@@H](CO)C(O)=O FOXXZZGDIAQPQI-XKNYDFJKSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 244000247747 Coptis groenlandica Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910002677 Pd–Sn Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007723 die pressing method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
杨氏模量(GPa) | 裂纹 |
100 | 无 |
110 | 无 |
120 | 无 |
130 | 有 |
140 | 有 |
线膨胀系数(×10-6/K) | 元件翘曲(μm) | 裂纹 |
9.5(第五实施方式) | 5 | 无 |
12 | 17 | 无 |
18 | 30 | 无 |
20 | 80 | 有 |
25 | 130 | 有 |
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004030048 | 2004-02-06 | ||
JP2004030048A JP2005223165A (ja) | 2004-02-06 | 2004-02-06 | 窒化物系発光素子 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2009101424804A Division CN101582481A (zh) | 2004-02-06 | 2005-02-04 | 氮化物系发光元件及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1652364A true CN1652364A (zh) | 2005-08-10 |
CN100524852C CN100524852C (zh) | 2009-08-05 |
Family
ID=34675540
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100073569A Expired - Fee Related CN100524852C (zh) | 2004-02-06 | 2005-02-04 | 氮化物系发光元件及其制造方法 |
CNA2009101424804A Pending CN101582481A (zh) | 2004-02-06 | 2005-02-04 | 氮化物系发光元件及其制造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2009101424804A Pending CN101582481A (zh) | 2004-02-06 | 2005-02-04 | 氮化物系发光元件及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (3) | US7592630B2 (zh) |
EP (1) | EP1562237A3 (zh) |
JP (1) | JP2005223165A (zh) |
CN (2) | CN100524852C (zh) |
Cited By (3)
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CN101834254A (zh) * | 2006-09-22 | 2010-09-15 | 晶元光电股份有限公司 | 发光组件及其制造方法 |
CN101123291B (zh) * | 2006-08-11 | 2011-11-16 | 夏普株式会社 | 氮化物半导体发光装置及其制造方法 |
US8664686B2 (en) | 2006-09-05 | 2014-03-04 | Epistar Corporation | Light emitting device and the manufacture method thereof |
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CN100372137C (zh) * | 2005-05-27 | 2008-02-27 | 晶能光电(江西)有限公司 | 具有上下电极结构的铟镓铝氮发光器件及其制造方法 |
KR100635157B1 (ko) * | 2005-09-09 | 2006-10-17 | 삼성전기주식회사 | 질화물계 반도체 발광소자 |
JP4799975B2 (ja) * | 2005-09-16 | 2011-10-26 | 昭和電工株式会社 | 窒化物系半導体発光素子及びその製造方法 |
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EP2017898A1 (en) * | 2007-07-17 | 2009-01-21 | Vishay Israel Ltd. | Semiconductor light-emitting device and method for the manufacture thereof |
US8652947B2 (en) * | 2007-09-26 | 2014-02-18 | Wang Nang Wang | Non-polar III-V nitride semiconductor and growth method |
US7928448B2 (en) | 2007-12-04 | 2011-04-19 | Philips Lumileds Lighting Company, Llc | III-nitride light emitting device including porous semiconductor layer |
US7791101B2 (en) * | 2008-03-28 | 2010-09-07 | Cree, Inc. | Indium gallium nitride-based ohmic contact layers for gallium nitride-based devices |
WO2009129353A1 (en) * | 2008-04-15 | 2009-10-22 | Purdue Research Foundation | Metallized silicon substrate for indium gallium nitride light-emitting diode |
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US8471282B2 (en) * | 2010-06-07 | 2013-06-25 | Koninklijke Philips Electronics N.V. | Passivation for a semiconductor light emitting device |
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JPWO2003034508A1 (ja) * | 2001-10-12 | 2005-02-03 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP3856750B2 (ja) * | 2001-11-13 | 2006-12-13 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
CN1202578C (zh) | 2001-12-07 | 2005-05-18 | 洲磊科技股份有限公司 | 形成具有金属基板的半导体元件 |
KR20030067964A (ko) | 2002-02-09 | 2003-08-19 | 엘지전자 주식회사 | 질화갈륨 기판 제조 방법 |
US20030189215A1 (en) | 2002-04-09 | 2003-10-09 | Jong-Lam Lee | Method of fabricating vertical structure leds |
JP4107868B2 (ja) | 2002-04-16 | 2008-06-25 | シャープ株式会社 | 窒化物系半導体発光素子の製造方法 |
CN1241253C (zh) | 2002-06-24 | 2006-02-08 | 丰田合成株式会社 | 半导体元件的制造方法 |
KR101030068B1 (ko) * | 2002-07-08 | 2011-04-19 | 니치아 카가쿠 고교 가부시키가이샤 | 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자 |
-
2004
- 2004-02-06 JP JP2004030048A patent/JP2005223165A/ja active Pending
-
2005
- 2005-01-28 EP EP05250451A patent/EP1562237A3/en not_active Withdrawn
- 2005-02-02 US US11/047,580 patent/US7592630B2/en not_active Expired - Fee Related
- 2005-02-04 CN CNB2005100073569A patent/CN100524852C/zh not_active Expired - Fee Related
- 2005-02-04 CN CNA2009101424804A patent/CN101582481A/zh active Pending
-
2007
- 2007-10-16 US US11/907,649 patent/US7488613B2/en not_active Expired - Fee Related
-
2009
- 2009-06-30 US US12/495,122 patent/US7892874B2/en not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101123291B (zh) * | 2006-08-11 | 2011-11-16 | 夏普株式会社 | 氮化物半导体发光装置及其制造方法 |
US8324639B2 (en) | 2006-08-11 | 2012-12-04 | Sharp Kabushiki Kaisha | Nitride semiconductor light emitting device |
TWI395351B (zh) * | 2006-08-11 | 2013-05-01 | Sharp Kk | 氮化物半導體發光元件及其製造方法 |
US9029884B2 (en) | 2006-08-11 | 2015-05-12 | Sharp Kabushiki Kaisha | Nitride semiconductor light emitting device |
US8664686B2 (en) | 2006-09-05 | 2014-03-04 | Epistar Corporation | Light emitting device and the manufacture method thereof |
CN101834254A (zh) * | 2006-09-22 | 2010-09-15 | 晶元光电股份有限公司 | 发光组件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1562237A2 (en) | 2005-08-10 |
US7892874B2 (en) | 2011-02-22 |
US20090263925A1 (en) | 2009-10-22 |
US20050173725A1 (en) | 2005-08-11 |
JP2005223165A (ja) | 2005-08-18 |
EP1562237A3 (en) | 2008-01-16 |
US7488613B2 (en) | 2009-02-10 |
US20080064130A1 (en) | 2008-03-13 |
CN100524852C (zh) | 2009-08-05 |
CN101582481A (zh) | 2009-11-18 |
US7592630B2 (en) | 2009-09-22 |
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