JP2019204981A - 多孔質の反射性コンタクトを有するデバイス - Google Patents
多孔質の反射性コンタクトを有するデバイス Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 61
- 229910052709 silver Inorganic materials 0.000 claims abstract description 15
- 239000004332 silver Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims description 71
- 239000002184 metal Substances 0.000 claims description 71
- 239000000758 substrate Substances 0.000 claims description 62
- 239000010936 titanium Substances 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 238000000605 extraction Methods 0.000 abstract description 8
- 238000009792 diffusion process Methods 0.000 abstract description 6
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- 238000000137 annealing Methods 0.000 description 16
- 239000000956 alloy Substances 0.000 description 13
- 229910045601 alloy Inorganic materials 0.000 description 13
- 239000010931 gold Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000012790 adhesive layer Substances 0.000 description 7
- 238000005019 vapor deposition process Methods 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 238000007788 roughening Methods 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- -1 ITO Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 238000012776 robust process Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009102 absorption Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009103 reabsorption Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- MZFIXCCGFYSQSS-UHFFFAOYSA-N silver titanium Chemical group [Ti].[Ag] MZFIXCCGFYSQSS-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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Abstract
Description
Claims (18)
- n型半導体領域、p型半導体領域、及び前記n型半導体領域と前記p型半導体領域との間の発光領域を有する半導体構造と、
第1のインジウム錫酸化物(ITO)領域と第1のメタル領域とを有する第1のコンタクトであり、前記n型半導体領域に電気的に結合された第1のコンタクトと、
前記p型半導体領域に電気的に結合された第2のコンタクトと、
前記第1のITO領域と接触して前記第1のコンタクトと前記発光領域との間に配置された多孔質領域と、
前記n型半導体領域に付着した基板と、
を有するデバイス。 - 前記第2のコンタクトは、
第2のITO領域と、
第2のメタル領域と
を有する、請求項1に記載のデバイス。 - 前記第2のITO領域の露出部がテクスチャ加工されている、請求項2に記載のデバイス。
- 前記第2のメタル領域はチタン及び銀を有する、請求項2に記載のデバイス。
- 前記第2のコンタクトは、前記p型半導体領域の一部に接続されている、請求項2に記載のデバイス。
- 垂直ではない側壁を有する請求項1に記載のデバイス。
- 前記多孔質領域は、0.4ミクロンと40ミクロンとの間の厚さを有する、請求項1に記載のデバイス。
- 前記第1のITO領域は、200nmと400nmとの間の厚さを有する、請求項1に記載のデバイス。
- 前記多孔質領域は、5%と80%との間の気孔率を有し、前記気孔率は、前記多孔質領域における空気の体積百分率である、請求項1に記載のデバイス。
- 前記多孔質領域は、20%と40%との間の気孔率を有し、前記気孔率は、前記多孔質領域における空気の体積百分率である、請求項1に記載のデバイス。
- n型半導体領域、p型半導体領域、及び前記n型半導体領域と前記p型半導体領域との間の発光領域を有する半導体構造と、
第1のインジウム錫酸化物(ITO)領域と第1のメタル領域とを有する第1のコンタクトであり、前記p型半導体領域に電気的に結合された第1のコンタクトと、
前記n型半導体領域に電気的に結合された第2のコンタクトと、
前記第1のITO領域と接触して前記第1のコンタクトと前記発光領域との間に配置された多孔質領域と、
前記n型半導体領域に付着した基板と、
を有するデバイス。 - 前記第2のコンタクトは、
第2のITO領域と、
第2のメタル領域と
を有する、請求項11に記載のデバイス。 - 前記第1のITO領域の露出部がテクスチャ加工されている、請求項12に記載のデバイス。
- 前記第1のメタル領域はチタン及び銀を有する、請求項11に記載のデバイス。
- 前記第1のコンタクトは、前記p型半導体領域の一部に接続されている、請求項11に記載のデバイス。
- 垂直ではない側壁を有する請求項11に記載のデバイス。
- 前記多孔質領域は、0.4ミクロンと40ミクロンとの間の厚さを有する、請求項11に記載のデバイス。
- 前記第1のITO領域は、200nmと400nmとの間の厚さを有する、請求項11に記載のデバイス。
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US201361779410P | 2013-03-13 | 2013-03-13 | |
US61/779,410 | 2013-03-13 | ||
JP2015562462A JP2016513882A (ja) | 2013-03-13 | 2014-03-10 | 多孔質の反射性コンタクトを作製する方法及び装置 |
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JP2019204981A true JP2019204981A (ja) | 2019-11-28 |
JP6942767B2 JP6942767B2 (ja) | 2021-09-29 |
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US (1) | US20150372192A1 (ja) |
EP (1) | EP2973755B1 (ja) |
JP (2) | JP2016513882A (ja) |
KR (1) | KR102284597B1 (ja) |
CN (1) | CN105009308B (ja) |
TW (1) | TWI656662B (ja) |
WO (1) | WO2014141028A1 (ja) |
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JP2016513882A (ja) * | 2013-03-13 | 2016-05-16 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 多孔質の反射性コンタクトを作製する方法及び装置 |
EP2953176A1 (de) * | 2014-06-02 | 2015-12-09 | Swarovski Energy GmbH | Beleuchtungsvorrichtung |
US10529820B2 (en) * | 2014-07-15 | 2020-01-07 | Bae Systems Information And Electronic Systems Integration Inc. | Method for gallium nitride on diamond semiconductor wafer production |
TWI753106B (zh) * | 2017-02-16 | 2022-01-21 | 韓商Lg伊諾特股份有限公司 | 半導體裝置 |
US10020422B1 (en) * | 2017-09-29 | 2018-07-10 | Oculus Vr, Llc | Mesa shaped micro light emitting diode with bottom N-contact |
US10566267B2 (en) * | 2017-10-05 | 2020-02-18 | Texas Instruments Incorporated | Die attach surface copper layer with protective layer for microelectronic devices |
US10418510B1 (en) | 2017-12-22 | 2019-09-17 | Facebook Technologies, Llc | Mesa shaped micro light emitting diode with electroless plated N-contact |
DE102018111324A1 (de) | 2018-05-11 | 2019-11-14 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
US11575055B2 (en) | 2019-07-15 | 2023-02-07 | SLT Technologies, Inc | Methods for coupling of optical fibers to a power photodiode |
US11569398B2 (en) | 2019-07-15 | 2023-01-31 | SLT Technologies, Inc | Power photodiode structures and devices |
US11444216B2 (en) * | 2019-07-15 | 2022-09-13 | Slt Technologies, Inc. | Power photodiode structures, methods of making, and methods of use |
US20220285584A1 (en) * | 2021-03-08 | 2022-09-08 | Applied Materials, Inc. | Indium-gallium-nitride light emitting diodes with light reflecting mirrors |
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TWI656662B (zh) | 2019-04-11 |
KR102284597B1 (ko) | 2021-08-04 |
KR20150128945A (ko) | 2015-11-18 |
JP2016513882A (ja) | 2016-05-16 |
EP2973755A1 (en) | 2016-01-20 |
CN105009308A (zh) | 2015-10-28 |
WO2014141028A1 (en) | 2014-09-18 |
CN105009308B (zh) | 2019-03-29 |
JP6942767B2 (ja) | 2021-09-29 |
US20150372192A1 (en) | 2015-12-24 |
TW201501359A (zh) | 2015-01-01 |
EP2973755B1 (en) | 2018-12-05 |
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