TWI575773B - 半導體發光裝置的接點 - Google Patents
半導體發光裝置的接點 Download PDFInfo
- Publication number
- TWI575773B TWI575773B TW099116193A TW99116193A TWI575773B TW I575773 B TWI575773 B TW I575773B TW 099116193 A TW099116193 A TW 099116193A TW 99116193 A TW99116193 A TW 99116193A TW I575773 B TWI575773 B TW I575773B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- transparent conductive
- conductive material
- type region
- microns
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 229910052709 silver Inorganic materials 0.000 claims description 21
- 239000004332 silver Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 239000004020 conductor Substances 0.000 claims description 14
- 150000004767 nitrides Chemical class 0.000 claims description 12
- 239000011810 insulating material Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- 239000010410 layer Substances 0.000 description 114
- 239000000463 material Substances 0.000 description 35
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 20
- 239000000758 substrate Substances 0.000 description 17
- 230000003287 optical effect Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000000605 extraction Methods 0.000 description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
Description
本發明係關於一種用於III族氮化物發光裝置的反射性接點。
半導體發光裝置(包含發光二極體(LED)、諧振腔發光二極體(RCLED)、垂直腔雷射二極體(VCSEL)及邊射型雷射)係當前可獲得之最有效光源之一。在製造能夠跨可見光譜操作之高亮度發光裝置中,當前所關注的材料系統包含III-V族半導體,尤其係鎵、鋁、銦與氮之二元、三元及四元合金,其等亦稱作III族氮化物材料。通常而言,藉由利用金屬有機化學氣相沈積(MOCVD)、分子束磊晶法(MBE)及其他磊晶技術在一藍寶石基板、碳化矽基板、III族氮化物基板、合成基板或其他適當之基板上磊晶地生長不同組合物及摻雜濃度的一半導體層堆疊而製造III族氮化物發光裝置。該堆疊通常包含形成於該基板上之用(例如)Si摻雜的一或更多個n型層、在形成於該n型層或該等n型層上之一作用區域中的一或更多個發光層,及形成於該作用區域上之用(例如)Mg摻雜的一或更多個p型層。電接點係形成於n型區域及p型區域上。III族氮化物裝置通常係形成為倒置型裝置或覆晶裝置,其中n接點及p接點均係形成於半導體結構之相同側上,且光係自該半導體結構之與該等接點相對之側提取。
US 6,514,782描述III族氮化物覆晶LED。「因為p型III族氮化物層之高電阻率,所以LED設計沿著p型層採用金屬化以提供p側電流散佈。…對於一倒置型設計,使用高度反射性電極金屬化對改良提取效率至關重要。…因為P電極幾乎完全跨作用區域延伸以提供至p-n接面中之均勻電流注入,所以p電極係光提取之主要因素。」
「對於III族氮化物裝置,在可製造程序中很難達成低光學吸收及低接觸電阻率之組合。例如,Ag可實現良好的p型歐姆接觸且非常具反射性,但在潮濕環境中Ag對III族氮化物層具較差的黏著性且對電遷移敏感,而此等可導致災難性裝置故障。Al具適度的反射性,但對p型III族氮化物材料卻無法實現良好的歐姆接觸,而其他元素金屬相當具吸收性(在可見波長區中單程吸收率大於25%)。一種可行的解決方法係使用一多層接點,該多層接點包含結合充當一電流散佈層之一厚反射性層的一極薄半透明歐姆接點。一選用障壁層係包含於歐姆層與反射性層之間。一p型多層接點之一實例係Au/NiOx/Al。此金屬化方案之典型厚度為30/100/1500 。類似地,一適當之n型GaN多層接點係具有30/1500 之典型厚度的Ti/Al。因為p電極反射率係提取效率之一主要因素,所以其在可製造性設計上不應作出妥協。」
本發明之一目的為在一反射性接點中包含一薄的透明電流散佈層及一透明絕緣材料。在一些實施例中,該接點之反射率可經改良而超越具有一反射性金屬接點之裝置。
本發明之實施例包含一半導體結構,該半導體結構包括安置於一n型區域與一p型區域之間的一III族氮化物發光層。安置於該p型區域上之一接點包含:一透明導電材料,其與該p型區域直接接觸;一反射性金屬層;及一透明絕緣材料,其安置於該透明導電層與該反射性金屬層之間。在該透明絕緣材料中之複數個開口中,該透明導電材料係與該反射性金屬層直接接觸。
可藉由減少與p接點相關聯之光學損耗來改良一LED的效能而無需增加使LED正向偏壓所需要的正向電壓Vf。包含藉由全內反射而反射之一介電層的一接點可比其中唯一反射材料係一金屬反射體的一接點更具反射性,諸如上文在US 6,514,782中描述之接點。
一導電介電層(諸如氧化銦錫(ITO))可安置於p型材料與銀質p接點之間。在此一雙層中,ITO不需貢獻於電流散佈且厚度可經最佳化以達成最高反射比;例如,ITO可為200奈米厚。但是,ITO具有高於最適於光學反射率的一折射率且在高導電率所需之厚度下可吸收大量光。
或者,一非導電介電質(諸如SiO2)可安置於p型材料與銀質p接點之間。開口必須形成於該非導電介電質中以將銀電連接至p型材料。該等開口必須間隔足夠近以一起防止電流擁擠於導電性較差的p型材料中。例如,開口可為次微米大小,而此可能需要昂貴且困難的技術,諸如光阻的全息或電子束曝光或一奈米壓印工具之使用。此外,介電質中之蝕刻開口可能損害曝露之p型材料,而此可降低形成於經損害之材料上的一歐姆接點的效率。
在本發明之實施例中,III族氮化物LED之p接點包含三層:一薄導電層,其與p型半導體直接接觸;一低光學損耗介電層,其安置於該薄導電層上且具有開口以促進電接觸;及一反射性金屬層,其在該透明介電層上。
圖1圖解說明根據本發明之實施例之一III族氮化物裝置的一部分。在圖1中,包含一n型區域、一發光區域或作用區域及一p型區域的一半導體結構係生長於一生長基板(未繪示於圖1中)上,該生長基板可為任何適當之生長基板且通常為藍寶石或SiC。首先於該基板上生長一n型區域22。n型區域22可包含不同組合物及摻雜濃度的多個層,該多個層包含(例如):準備層,諸如緩衝層或成核層,此等層可為n型摻雜或非有意摻雜;釋放層,此等層經設計用於促進稍後釋放該生長基板或在基板移除之後使半導體結構變薄;及n型或甚至p型裝置層,此等層經經設計用於發光區域所期望之特定光學性質或電性質以有效地發射光。
一發光區域或作用區域24係生長於n型區域22上。適當之發光區域的實例包含一單一厚或薄發光層或一多量子井發光區域,該多量子井發光區域包含由障壁層分離之多個薄或厚量子井發光層。例如,一多量子井發光區域可包含由障壁(其等每一者具有100 或更少之一厚度)分離之多個發光層(其等每一者具有25 或更少之一厚度)。在一些實施例中,裝置中之發光層之每一者的厚度係厚於50 。
一p型區域26係生長於發光區域24上。如同該n型區域,該p型區域可包含不同組合物、厚度及摻雜濃度的多個層,該多個層包含非有意摻雜的層或n型層。
一薄導電層28係形成於p型區域26上。薄導電層28可為(例如)銀、鋁或一導電介電質(諸如ITO、氧化鎳、ZnO)或任何其他適當之半透明導電材料。例如,一銀導電層28在一些實施例中可為在0.5奈米厚與2奈米厚之間,在一些實施例中可為在2奈米厚與8奈米厚之間,且在一些實施例中可為10奈米厚。為一透明導電氧化物之一導電層28可為更厚。例如,一ITO導電層28之電阻率可為銀的100倍,此需要厚度為一銀導電層28之100倍的一ITO導電層28。為使電流散佈若干微米可能需要(例如)為200奈米厚的一ITO導電層28。導電層28之材料及厚度可經選擇使得電流可在導電層28中散佈達例如10微米。
在一些實施例中,薄導電層28係形成為一組小區域,而非形成為一單一、不中斷的連續層。在一些實施例中,將一薄銀層蒸鍍於p型區域26之表面上,且接著進行退火。在退火期間,銀趨向於從一連續平坦層聚結為一較厚的離散區域網路。例如,可將十埃的銀蒸鍍於p型區域26上。在退火之後,銀區域可為(例如)約200埃長且約200埃厚。例如,銀區域在一些實施例中可分開至多1微米且在一些實施例中分開至多500奈米,使得在一些實施例中p型區域26之少於10%的表面係被銀覆蓋。在一些實施例中,可形成一平坦的薄導電層28,接著對其蝕刻以形成一組小區域。在一些實施例中,在銀沈積期間,加熱此結構以促進銀遷移及聚結為一較厚的離散區域網路。
一低光學損耗材料30係形成於導電層28上。低損耗材料30可為(例如)SiOx、SiNx、MgF2、Al2O3或具反射性、具可製造性且易於黏著至導電層28的任何其他適當之高度透明介電質。在一些實施例中,低損耗材料30具有一低折射率,使得低損耗材料與導電層28及p型區域26之間之折射率的變化儘可能大。例如,低損耗材料30在一些實施例中可為在200奈米厚與500奈米厚之間,在一些實施例中可為在250奈米厚與350奈米厚之間,且在一些實施例中可為250奈米厚。
接著(例如)藉由習知遮罩及蝕刻步驟於該低損耗材料30中形成開口32。在一些實施例中,使用終點偵測以避免蝕刻下伏導電層28。在一些實施例中,可用乾式蝕刻以將該低損耗材料30蝕刻至接近終點,接著使用濕式蝕刻以蝕刻剩餘厚度。圖2係在低損耗材料30中形成開口32之後的圖1之結構的一平面圖。儘管圖解說明形成為三角形晶格之圓形開口,但可使用呈任何適當之晶格的任何適當形狀的開口。例如,開口32在一些實施例中直徑可為小於100微米,在一些實施例中直徑可為在1微米與5微米之間,在一些實施例中直徑可為在2微米與15微米之間,在一些實施例中直徑可為在2微米與4微米之間,且一些實施例中直徑可為3微米。例如,該等開口可隔開20微米至200微米,在一些實施例中可為中心隔開5微米至20微米,在一些實施例中隔開10微米至15微米,在一些實施例中隔開6微米,且在一些實施例中隔開12微米。
該等開口之大小及間距可與導電層28之電阻率及厚度有關。例如,一150奈米厚的ITO層具有約相同於一2微米厚的n-GaN層之薄片電阻。在具有形成於n-GaN上之一習知接點的一裝置中,最為鄰近的n接點可隔開約150微米。相應地,在根據本發明實施例之具有一150奈米厚之ITO導電層28的一裝置中,開口32之間的距離可為150微米。在根據本發明實施例之具有一30奈米厚之ITO導電層28的一裝置中,開口32之間的距離可為30微米。若該等開口32在直徑上為3微米且隔開30微米,則開口32之表面覆蓋率為約1%。
導電層28及低損耗材料30之厚度取決於所使用之個別材料以及材料之組合。
一反射性導電層34係形成於剩餘低損耗材料30及開口32上。反射性層34經由開口32及導電層28電連接至p型區域26。反射性層34可為(例如)銀。反射性層34可為一多層堆疊或可包含(例如)一或更多個反射性金屬、一或更多個歐姆接觸金屬及一或更多個防護金屬或其他防護材料。一反射性層34之一實例為銀、鎳、銀,接著一防護金屬(諸如TiWN,其可防止或減少銀的電遷移)之一堆疊。
可藉由對接點增添無損耗散射而改良光提取及因此改良LED之效能。在一些實施例中,在可產生一粗糙表面(其相較於一光滑表面可改良散射)的條件下生長p型區域26。導電層28可在該粗糙表面上形成為一保形層,因此該導電層28亦具有一粗糙表面。接著(例如)藉由旋塗形成一透明低損耗層30以覆蓋粗糙處及產生一光滑表面。如上文所描述,在低損耗材料中形成開口且接著形成一反射性層34。相較於一光滑界面,P型區域26/導電層28界面之粗糙度可引起損耗增加,但增加提取可導致整體改良之效能。在一些實施例中,可藉由將低損耗層30及/或導電層28在結構上製為多孔或柱狀(例如藉由利用斜角沈積形成一ITO導電層28及/或SiOx低損耗層)而增加散射。孔隙率之增加伴隨著折射率的減小,而此增加接點之反射比。可藉由控制沈積角度而控制孔隙率,如《Applied Physics Letters》第93卷101914(2008)的「Quantification of porosity and deposition rate of nanoporous films grown by oblique-angle deposition」中所描述,該文以引用方式併入本文中。
在一實例中,將一摻雜Al的ZnO導電層28實施於生長為p型區域26之頂層的一粗糙p型GaN層上。將一低折射率SiOx層30旋塗於ZnO上以在ZnO/SiOx界面處提供散射及使該粗糙ZnO層平坦化。形成開口32,接著沈積一銀反射性層34。
在一些實施例中,低損耗材料30係一多層介電堆疊。最接近於導電層28及反射性層34的諸層係經選擇以達成良好的黏著性。諸內層係經選擇以達成最小折射率。例如,可在一單一處理步驟中形成多個層。一多層低損耗結構30可比一單一層更可靠且更具反射性。此外,一多層堆疊中之諸層之間的折射率之差異可提供散射,當如上文描述將一多層堆疊實施於一粗糙表面上時尤為如此。
在一些實施例中,如圖4中所圖解說明,增加低損耗材料30中之開口32的蝕刻深度,以包含移除下伏導電層28之一些,而此可改良電接觸且可增加散射。在一些實施例中,開口32之側壁33係成角度的以使高角度光朝著提取表面(即,與反射性材料34相對之裝置表面)更佳地散射。側壁角度θ相對於表面法線可為(例如)在5度與50度之間。
圖3圖解說明連接至一基座40之一LED 42。在形成包含如上文所描述之導電層28、低損耗材料30及反射性材料34的p接點48之前或之後,藉由蝕刻掉p型區域及發光區域之部分而使n型區域之部分曝露。由圖3中之結構44表示包含n型區域22、發光區域24及p型區域26之半導體結構。於n型區域之曝露部分上形成N接點46。
LED 42係藉由n互連件56及p互連件58而接合至基座40。互連件56及58可為任何適當之材料(諸如焊料或其他金屬)且可包含多個材料層。在一些實施例中,互連件包含至少一金層,且藉由超音波接合法形成LED 42與基座40之間的接合。
在超音波接合期間,將LED晶粒42定位於一基座40上。將一接合頭定位於LED晶粒之頂面上(在生長於藍寶石上之III族氮化物裝置的情況中,通常定位於之一藍寶石生長基板的頂面上)。接合頭係連接至一超音波換能器。該超音波換能器可為(例如)鋯鈦酸鉛(PZT)層之一堆疊。當以可引起系統諧波諧振之一頻率(通常係數量級為幾十或幾百千赫茲的一頻率)將一電壓施加於換能器時,該換能器開始振動,此繼而引起接合頭及LED晶粒振動(通常在微米數量級之振幅下一振動)。該振動引起LED 42上之一結構的金屬晶格中之原子與基座40上之一結構相互擴散而導致一冶金接續結合。可在接合期間增添熱及/或壓力。
在將LED晶粒42接合至基座40之後,可(例如)藉由雷射剝離、蝕刻或適於一特定生長基板之任何其他技術來移除其上生長半導體層的生長基板。在移除生長基板之後,可(例如)藉由光電化學蝕刻使半導體結構變薄及/或可(例如)用光子晶體結構使表面粗糙化或圖案化。在移除基板之後,可將一透鏡、波長轉換材料或此項技術中已知的其他結構安置於LED 42上。
已詳細描述本發明,熟悉此項技術者將瞭解,鑑於本發明,可在不脫離本文描述之本發明概念的精神下對本發明進行修改。因此,並不意欲將本發明之範疇限於圖解說明及描述之特定實施例。
22...n型區域
24...發光區域或作用區域
26...p型區域
28...導電層
30...低光學損耗材料/低折射率SiOx層
32...開口
33...開口之側壁
34...反射性導電層
40...基座
42...LED/LED晶粒
44...表示包含n型區域、發光區域及p型區域之半導體結構的結構
46...n接點
48...p接點
56...n互連件
58...p互連件
θ...側壁角度
圖1圖解說明形成於一III族氮化物半導體結構上之包含一導電層、一透明絕緣或低損耗層及一反射性層的一接點;
圖2係包含具有開口之一低損耗層之一接點的一部分的一平面圖;
圖3係接合至一基座之一LED的一橫截面圖;及
圖4圖解說明在透明絕緣材料中具有開口的一接點,該等開口延伸至透明導電材料中且具有成角度之側壁。
22...n型區域
24...發光區域或作用區域
26...p型區域
28...導電層
30...低光學損耗材料/低折射率SiOx層
32...開口
34...反射性導電層
Claims (15)
- 一種裝置,其包括:一半導體結構,其包括安置於一n型區域與一p型區域之間的一III族氮化物發光層;一接點,其安置於該p型區域上,該接點包括:一透明導電材料,其與該p型區域直接接觸,其中該透明導電材料係形成於複數個離散區域(discrete region)中之銀(silver);一反射性金屬層;一透明絕緣材料,其安置於該透明導電層與該反射性金屬層之間;及複數個開口,其等在該透明絕緣材料中,其中該透明導電材料在該複數個開口中與該反射性金屬層直接接觸。
- 如請求項1之裝置,其中該複數個離散區域佔據安置該接點之該p型區域之一表面少於10%的面積。
- 如請求項1之裝置,其中該透明導電材料具有在0.5奈米與10奈米之間的一厚度。
- 如請求項1之裝置,其中該透明導電材料係氧化物且具有在30奈米與1000奈米之間的一厚度。
- 如請求項1之裝置,其中該透明導電材料係氧化銦錫、氧化鎳及ZnO之一者。
- 如請求項1之裝置,其中該透明絕緣材料係SiOx、SiNx、MgF2及Al2O3之一者。
- 如請求項1之裝置,其中該透明絕緣材料具有在200奈米與500奈米之間的一厚度。
- 如請求項1之裝置,其中該等開口具有在2微米與15微米之間的一寬度。
- 如請求項1之裝置,其中該等開口係隔開20微米至200微米。
- 如請求項1之裝置,其中該透明絕緣材料包括一多層堆疊。
- 如請求項10之裝置,其中:該多層堆疊中之一第一層係與該透明導電材料直接接觸;該多層堆疊中之一第二層係與該反射性金屬層直接接觸;且安置於該等第一層及第二層之間的一第三層具有低於該等第一層及第二層的一折射率。
- 如請求項1之裝置,其中與該透明導電材料直接接觸之該p型區域的一表面係粗糙的。
- 如請求項1之裝置,其中該等開口延伸至該透明導電材料中。
- 如請求項1之裝置,其中該等開口相對於該反射性金屬層之一頂面的一法線具有在5度與50度之間的一側壁角度。
- 如請求項1之裝置,其中該透明絕緣材料及該透明導電材料之至少一者為多孔。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/491,976 US20100327300A1 (en) | 2009-06-25 | 2009-06-25 | Contact for a semiconductor light emitting device |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201108465A TW201108465A (en) | 2011-03-01 |
TWI575773B true TWI575773B (zh) | 2017-03-21 |
Family
ID=43379711
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW099116193A TWI575773B (zh) | 2009-06-25 | 2010-05-20 | 半導體發光裝置的接點 |
Country Status (7)
Country | Link |
---|---|
US (2) | US20100327300A1 (zh) |
EP (1) | EP2446486B1 (zh) |
JP (2) | JP2012531733A (zh) |
KR (1) | KR20120101324A (zh) |
CN (2) | CN106057987B (zh) |
TW (1) | TWI575773B (zh) |
WO (1) | WO2010150114A2 (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8581229B2 (en) * | 2009-11-23 | 2013-11-12 | Koninklijke Philips N.V. | III-V light emitting device with thin n-type region |
US8410515B2 (en) * | 2010-08-31 | 2013-04-02 | Micron Technology, Inc. | Solid state lighting devices with point contacts and associated methods of manufacturing |
DE102010049186B4 (de) | 2010-10-21 | 2022-03-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
CN103367595B (zh) * | 2012-03-30 | 2016-02-10 | 展晶科技(深圳)有限公司 | 发光二极管晶粒及其制造方法 |
US10276749B2 (en) | 2013-01-09 | 2019-04-30 | Sensor Electronic Technology, Inc. | Ultraviolet reflective rough adhesive contact |
US9768357B2 (en) | 2013-01-09 | 2017-09-19 | Sensor Electronic Technology, Inc. | Ultraviolet reflective rough adhesive contact |
US9287449B2 (en) | 2013-01-09 | 2016-03-15 | Sensor Electronic Technology, Inc. | Ultraviolet reflective rough adhesive contact |
US20150093500A1 (en) * | 2013-09-30 | 2015-04-02 | Intermolecular, Inc. | Corrosion-Resistant Silver Coatings with Improved Adhesion to III-V Materials |
US9653570B2 (en) * | 2015-02-12 | 2017-05-16 | International Business Machines Corporation | Junction interlayer dielectric for reducing leakage current in semiconductor devices |
KR102000271B1 (ko) * | 2017-04-19 | 2019-10-01 | 전북대학교산학협력단 | 질화갈륨 계열 발광 다이오드의 제조방법 및 이로부터 제조된 질화갈륨 계열 발광 다이오드 |
DE102017113389B4 (de) | 2017-06-19 | 2021-07-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterlaserdiode |
CN107845711A (zh) * | 2017-11-03 | 2018-03-27 | 江苏新广联半导体有限公司 | 提升电流扩展均匀性的led倒装芯片及其制作方法 |
KR102543183B1 (ko) | 2018-01-26 | 2023-06-14 | 삼성전자주식회사 | 반도체 발광소자 |
CN111158191A (zh) * | 2020-02-04 | 2020-05-15 | Tcl华星光电技术有限公司 | 背光模组及显示装置 |
DE102020108941B4 (de) * | 2020-03-31 | 2022-05-25 | Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik | Diodenlaser mit verrringerter Strahldivergenz |
JP2021197437A (ja) * | 2020-06-12 | 2021-12-27 | スタンレー電気株式会社 | 垂直共振器型発光素子 |
CN117393681B (zh) * | 2023-12-12 | 2024-04-12 | 江西兆驰半导体有限公司 | 一种倒装发光二极管芯片的制备方法及发光二极管芯片 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6194743B1 (en) * | 1997-12-15 | 2001-02-27 | Agilent Technologies, Inc. | Nitride semiconductor light emitting device having a silver p-contact |
US20060273335A1 (en) * | 2004-07-12 | 2006-12-07 | Hirokazu Asahara | Semiconductor light emitting device |
Family Cites Families (135)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5045408A (en) * | 1986-09-19 | 1991-09-03 | University Of California | Thermodynamically stabilized conductor/compound semiconductor interfaces |
JP2786952B2 (ja) | 1991-02-27 | 1998-08-13 | 株式会社豊田中央研究所 | 窒化ガリウム系化合物半導体発光素子およびその製造方法 |
JPH0831070A (ja) | 1994-07-20 | 1996-02-02 | Nec Eng Ltd | カートリッジ式ハードディスクドライブのロック機構 |
JP3620926B2 (ja) * | 1995-06-16 | 2005-02-16 | 豊田合成株式会社 | p伝導形3族窒化物半導体の電極及び電極形成方法及び素子 |
US5917202A (en) * | 1995-12-21 | 1999-06-29 | Hewlett-Packard Company | Highly reflective contacts for light emitting semiconductor devices |
JP3384700B2 (ja) * | 1996-10-22 | 2003-03-10 | 株式会社豊田中央研究所 | 窒化ガリウム系化合物半導体発光素子およびその製造方法 |
US6291840B1 (en) * | 1996-11-29 | 2001-09-18 | Toyoda Gosei Co., Ltd. | GaN related compound semiconductor light-emitting device |
JP3303711B2 (ja) | 1997-01-27 | 2002-07-22 | 豊田合成株式会社 | 素子の電極及びその製造方法 |
JP4118371B2 (ja) * | 1997-12-15 | 2008-07-16 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | 電極に銀を有する窒化物半導体発光装置およびその製造方法ならびに半導体光電子装置 |
US6291839B1 (en) * | 1998-09-11 | 2001-09-18 | Lulileds Lighting, U.S. Llc | Light emitting device having a finely-patterned reflective contact |
JP3525061B2 (ja) * | 1998-09-25 | 2004-05-10 | 株式会社東芝 | 半導体発光素子の製造方法 |
JP3685306B2 (ja) * | 1999-03-03 | 2005-08-17 | パイオニア株式会社 | 2波長半導体レーザ素子及びその製造方法 |
US6512248B1 (en) * | 1999-10-19 | 2003-01-28 | Showa Denko K.K. | Semiconductor light-emitting device, electrode for the device, method for fabricating the electrode, LED lamp using the device, and light source using the LED lamp |
WO2001041225A2 (en) * | 1999-12-03 | 2001-06-07 | Cree Lighting Company | Enhanced light extraction in leds through the use of internal and external optical elements |
US6514782B1 (en) * | 1999-12-22 | 2003-02-04 | Lumileds Lighting, U.S., Llc | Method of making a III-nitride light-emitting device with increased light generating capability |
CN1292494C (zh) | 2000-04-26 | 2006-12-27 | 奥斯兰姆奥普托半导体有限责任公司 | 发光半导体元件及其制造方法 |
US6693352B1 (en) * | 2000-06-05 | 2004-02-17 | Emitronix Inc. | Contact structure for group III-V semiconductor devices and method of producing the same |
TW472400B (en) * | 2000-06-23 | 2002-01-11 | United Epitaxy Co Ltd | Method for roughing semiconductor device surface to increase the external quantum efficiency |
US6420732B1 (en) * | 2000-06-26 | 2002-07-16 | Luxnet Corporation | Light emitting diode of improved current blocking and light extraction structure |
JP2002016286A (ja) | 2000-06-27 | 2002-01-18 | Sharp Corp | 半導体発光素子 |
JP4024994B2 (ja) * | 2000-06-30 | 2007-12-19 | 株式会社東芝 | 半導体発光素子 |
US6946685B1 (en) * | 2000-08-31 | 2005-09-20 | Lumileds Lighting U.S., Llc | Light emitting semiconductor method and device |
TW579608B (en) * | 2000-11-24 | 2004-03-11 | High Link Technology Corp | Method and structure of forming electrode for light emitting device |
JP2002335048A (ja) * | 2001-03-06 | 2002-11-22 | Sony Corp | 窒化物系半導体レーザ素子及びその製造方法 |
US6547249B2 (en) * | 2001-03-29 | 2003-04-15 | Lumileds Lighting U.S., Llc | Monolithic series/parallel led arrays formed on highly resistive substrates |
JP2002313914A (ja) | 2001-04-18 | 2002-10-25 | Sony Corp | 配線形成方法及びこれを用いた素子の配列方法、画像表示装置の製造方法 |
US6630689B2 (en) * | 2001-05-09 | 2003-10-07 | Lumileds Lighting, U.S. Llc | Semiconductor LED flip-chip with high reflectivity dielectric coating on the mesa |
US6576488B2 (en) * | 2001-06-11 | 2003-06-10 | Lumileds Lighting U.S., Llc | Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor |
WO2003007390A1 (fr) * | 2001-07-12 | 2003-01-23 | Nichia Corporation | Dispositif semi-conducteur |
JP2003168823A (ja) * | 2001-09-18 | 2003-06-13 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
US6784462B2 (en) | 2001-12-13 | 2004-08-31 | Rensselaer Polytechnic Institute | Light-emitting diode with planar omni-directional reflector |
EP2105977B1 (en) * | 2002-01-28 | 2014-06-25 | Nichia Corporation | Nitride semiconductor element with supporting substrate and method for producing nitride semiconductor element |
JP4122785B2 (ja) | 2002-01-30 | 2008-07-23 | 日亜化学工業株式会社 | 発光素子 |
TW513821B (en) * | 2002-02-01 | 2002-12-11 | Hsiu-Hen Chang | Electrode structure of LED and manufacturing the same |
TW577178B (en) * | 2002-03-04 | 2004-02-21 | United Epitaxy Co Ltd | High efficient reflective metal layer of light emitting diode |
US8969883B2 (en) * | 2002-11-16 | 2015-03-03 | Lg Innotek Co., Ltd. | Semiconductor light device and fabrication method thereof |
TWI303909B (en) * | 2002-11-25 | 2008-12-01 | Nichia Corp | Ridge waveguide semiconductor laser diode |
TW591811B (en) * | 2003-01-02 | 2004-06-11 | Epitech Technology Corp Ltd | Color mixing light emitting diode |
EP1450414A3 (en) * | 2003-02-19 | 2008-12-24 | Nichia Corporation | Nitride semiconductor device |
US6990132B2 (en) * | 2003-03-20 | 2006-01-24 | Xerox Corporation | Laser diode with metal-oxide upper cladding layer |
JP4130163B2 (ja) * | 2003-09-29 | 2008-08-06 | 三洋電機株式会社 | 半導体発光素子 |
US20050156183A1 (en) * | 2003-10-06 | 2005-07-21 | Tzong-Liang Tsai | Light-emitting device having reflecting layer formed under electrode |
US20050072968A1 (en) * | 2003-10-06 | 2005-04-07 | Tzong-Liang Tsai | Light-emitting device |
KR100799857B1 (ko) | 2003-10-27 | 2008-01-31 | 삼성전기주식회사 | 전극 구조체 및 이를 구비하는 반도체 발광 소자 |
KR20050051920A (ko) * | 2003-11-28 | 2005-06-02 | 삼성전자주식회사 | 플립칩형 질화물계 발광소자 및 그 제조방법 |
WO2005062389A2 (en) * | 2003-12-24 | 2005-07-07 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device, lighting module, lighting apparatus, display element, and manufacturing method for semiconductor light emitting device |
JP2005191219A (ja) | 2003-12-25 | 2005-07-14 | Sanken Electric Co Ltd | 半導体発光素子およびその製造方法 |
KR100586943B1 (ko) * | 2003-12-26 | 2006-06-07 | 삼성전기주식회사 | 질화갈륨계 반도체 발광소자의 제조방법 |
JP4604488B2 (ja) * | 2003-12-26 | 2011-01-05 | 日亜化学工業株式会社 | 窒化物半導体発光素子およびその製造方法 |
CN100524790C (zh) * | 2004-02-02 | 2009-08-05 | 三垦电气株式会社 | 半导体发光元件与保护元件的复合半导体装置 |
KR100634503B1 (ko) * | 2004-03-12 | 2006-10-16 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
KR100631840B1 (ko) * | 2004-06-03 | 2006-10-09 | 삼성전기주식회사 | 플립칩용 질화물 반도체 발광소자 |
US7166483B2 (en) * | 2004-06-17 | 2007-01-23 | Tekcore Co., Ltd. | High brightness light-emitting device and manufacturing process of the light-emitting device |
US7279751B2 (en) * | 2004-06-21 | 2007-10-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device and manufacturing method thereof |
TWI299914B (en) * | 2004-07-12 | 2008-08-11 | Epistar Corp | Light emitting diode with transparent electrically conductive layer and omni directional reflector |
JP5177638B2 (ja) * | 2004-07-12 | 2013-04-03 | 三星電子株式会社 | フリップチップ型窒化物系発光素子 |
WO2006006556A1 (ja) | 2004-07-12 | 2006-01-19 | Rohm Co., Ltd. | 半導体発光素子 |
TWI374552B (en) | 2004-07-27 | 2012-10-11 | Cree Inc | Ultra-thin ohmic contacts for p-type nitride light emitting devices and methods of forming |
US7557380B2 (en) * | 2004-07-27 | 2009-07-07 | Cree, Inc. | Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads |
KR100896564B1 (ko) * | 2004-08-31 | 2009-05-07 | 삼성전기주식회사 | 반사전극 및 이를 구비하는 화합물 반도체 발광소자 |
JP4457826B2 (ja) | 2004-09-22 | 2010-04-28 | 三菱化学株式会社 | 窒化物半導体を用いた発光ダイオード |
US8174037B2 (en) | 2004-09-22 | 2012-05-08 | Cree, Inc. | High efficiency group III nitride LED with lenticular surface |
US7512167B2 (en) * | 2004-09-24 | 2009-03-31 | Sanyo Electric Co., Ltd. | Integrated semiconductor laser device and method of fabricating the same |
DE102005045589A1 (de) * | 2004-09-24 | 2006-04-06 | Epistar Corp. | Flüssigkristalldisplay |
JP3841096B2 (ja) | 2004-09-28 | 2006-11-01 | セイコーエプソン株式会社 | 配線パターンの形成方法、多層配線基板の製造方法、電子機器 |
US7291865B2 (en) * | 2004-09-29 | 2007-11-06 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device |
KR100773538B1 (ko) | 2004-10-07 | 2007-11-07 | 삼성전자주식회사 | 반사 전극 및 이를 구비하는 화합물 반도체 발광소자 |
US7679097B2 (en) * | 2004-10-21 | 2010-03-16 | Nichia Corporation | Semiconductor light emitting device and method for manufacturing the same |
US20070145386A1 (en) * | 2004-12-08 | 2007-06-28 | Samsung Electro-Mechanics Co., Ltd. | Semiconductor light emitting device and method of manufacturing the same |
US7432119B2 (en) | 2005-01-11 | 2008-10-07 | Semileds Corporation | Light emitting diode with conducting metal substrate |
US9508902B2 (en) * | 2005-02-21 | 2016-11-29 | Epistar Corporation | Optoelectronic semiconductor device |
KR100631969B1 (ko) * | 2005-02-28 | 2006-10-11 | 삼성전기주식회사 | 질화물 반도체 발광소자 |
KR101100425B1 (ko) * | 2005-05-07 | 2011-12-30 | 삼성전자주식회사 | 반도체 레이저 다이오드 및 그 제조방법 |
JP4670489B2 (ja) * | 2005-06-06 | 2011-04-13 | 日立電線株式会社 | 発光ダイオード及びその製造方法 |
US7736945B2 (en) * | 2005-06-09 | 2010-06-15 | Philips Lumileds Lighting Company, Llc | LED assembly having maximum metal support for laser lift-off of growth substrate |
US7592637B2 (en) * | 2005-06-17 | 2009-09-22 | Goldeneye, Inc. | Light emitting diodes with reflective electrode and side electrode |
JP2007005591A (ja) * | 2005-06-24 | 2007-01-11 | Toshiba Corp | 半導体発光素子 |
WO2007004701A1 (en) | 2005-07-04 | 2007-01-11 | Showa Denko K.K. | Gallium nitride-based compound semiconductor lihgt-emitting device |
JP5030398B2 (ja) * | 2005-07-04 | 2012-09-19 | 昭和電工株式会社 | 窒化ガリウム系化合物半導体発光素子 |
JP4483728B2 (ja) * | 2005-07-19 | 2010-06-16 | 住友電気工業株式会社 | 半導体光デバイスの製造方法 |
CN100449888C (zh) * | 2005-07-29 | 2009-01-07 | 日亚化学工业株式会社 | 半导体激光元件 |
JP2007110090A (ja) | 2005-09-13 | 2007-04-26 | Sony Corp | GaN系半導体発光素子、発光装置、画像表示装置、面状光源装置、及び、液晶表示装置組立体 |
JP5032017B2 (ja) * | 2005-10-28 | 2012-09-26 | 株式会社東芝 | 半導体発光素子及びその製造方法並びに半導体発光装置 |
CN101820043A (zh) | 2006-01-09 | 2010-09-01 | 首尔Opto仪器股份有限公司 | 发光装置 |
EP2003704A1 (en) | 2006-02-28 | 2008-12-17 | Rohm Co., Ltd. | Semiconductor light emitting element |
KR101198763B1 (ko) * | 2006-03-23 | 2012-11-12 | 엘지이노텍 주식회사 | 기둥 구조와 이를 이용한 발광 소자 및 그 형성방법 |
KR100725610B1 (ko) * | 2006-04-18 | 2007-06-08 | 포항공과대학교 산학협력단 | 오믹 전극 형성 방법 및 반도체 발광 소자 |
JP5044986B2 (ja) * | 2006-05-17 | 2012-10-10 | サンケン電気株式会社 | 半導体発光装置 |
US7573074B2 (en) * | 2006-05-19 | 2009-08-11 | Bridgelux, Inc. | LED electrode |
JP4946195B2 (ja) | 2006-06-19 | 2012-06-06 | サンケン電気株式会社 | 半導体発光素子及びその製造方法 |
JP4789713B2 (ja) * | 2006-06-29 | 2011-10-12 | 株式会社豊田中央研究所 | ウェットエッチング方法、ダメージ層除去方法、半導体装置の製造方法、および半導体基板の製造方法 |
JP2008053685A (ja) * | 2006-08-23 | 2008-03-06 | Samsung Electro Mech Co Ltd | 垂直構造窒化ガリウム系発光ダイオード素子及びその製造方法 |
JP4929924B2 (ja) * | 2006-08-25 | 2012-05-09 | サンケン電気株式会社 | 半導体発光素子、その製造方法、及び複合半導体装置 |
TWI306677B (en) | 2006-09-14 | 2009-02-21 | Ind Tech Res Inst | Light emitting apparatus and screen |
JP4142084B2 (ja) * | 2006-10-16 | 2008-08-27 | 三菱電機株式会社 | 半導体光素子の製造方法 |
US7646798B2 (en) * | 2006-12-28 | 2010-01-12 | Nichia Corporation | Nitride semiconductor laser element |
CN102779918B (zh) * | 2007-02-01 | 2015-09-02 | 日亚化学工业株式会社 | 半导体发光元件 |
JP2008192782A (ja) * | 2007-02-05 | 2008-08-21 | Toyota Central R&D Labs Inc | 電極及びそれを有するiii族窒化物系化合物半導体発光素子 |
TWI331816B (en) * | 2007-04-03 | 2010-10-11 | Advanced Optoelectronic Tech | Semiconductor light-emitting device |
JP2008270416A (ja) | 2007-04-18 | 2008-11-06 | Sanken Electric Co Ltd | 物体に粗面を形成する方法 |
DE102007029370A1 (de) * | 2007-05-04 | 2008-11-06 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
US7714339B2 (en) * | 2007-05-29 | 2010-05-11 | Neoton Optoelectronics Corp. | Light emitting diode |
TWI344709B (en) * | 2007-06-14 | 2011-07-01 | Epistar Corp | Light emitting device |
KR100872717B1 (ko) * | 2007-06-22 | 2008-12-05 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
JP2009004625A (ja) * | 2007-06-22 | 2009-01-08 | Sanken Electric Co Ltd | 半導体発光装置 |
WO2009010762A1 (en) * | 2007-07-19 | 2009-01-22 | Photonstar Led Limited | Vertical led with conductive vias |
CN101355119B (zh) * | 2007-07-25 | 2010-08-18 | 中国科学院半导体研究所 | 采用全光学膜体系的垂直结构发光二极管制作方法 |
JP2009049267A (ja) * | 2007-08-22 | 2009-03-05 | Toshiba Corp | 半導体発光素子及びその製造方法 |
JP5251038B2 (ja) * | 2007-08-23 | 2013-07-31 | 豊田合成株式会社 | 発光装置 |
US7847312B2 (en) * | 2007-09-14 | 2010-12-07 | Sharp Kabushiki Kaisha | Nitride semiconductor light-emitting device |
JP5634003B2 (ja) * | 2007-09-29 | 2014-12-03 | 日亜化学工業株式会社 | 発光装置 |
US8368100B2 (en) * | 2007-11-14 | 2013-02-05 | Cree, Inc. | Semiconductor light emitting diodes having reflective structures and methods of fabricating same |
US7915629B2 (en) * | 2008-12-08 | 2011-03-29 | Cree, Inc. | Composite high reflectivity layer |
US20090173956A1 (en) * | 2007-12-14 | 2009-07-09 | Philips Lumileds Lighting Company, Llc | Contact for a semiconductor light emitting device |
KR100947676B1 (ko) * | 2007-12-17 | 2010-03-16 | 주식회사 에피밸리 | 3족 질화물 반도체 발광소자 |
EP2232240B1 (en) * | 2007-12-17 | 2012-08-08 | Stichting IMEC Nederland | Gas sensing device |
US7985979B2 (en) * | 2007-12-19 | 2011-07-26 | Koninklijke Philips Electronics, N.V. | Semiconductor light emitting device with light extraction structures |
US7569432B1 (en) * | 2008-01-14 | 2009-08-04 | Chang Gung University | Method of manufacturing an LED |
US8115222B2 (en) * | 2008-01-16 | 2012-02-14 | Rohm Co., Ltd. | Semiconductor light emitting device and fabrication method for the semiconductor light emitting device |
JP5047013B2 (ja) * | 2008-03-12 | 2012-10-10 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
JP5651288B2 (ja) * | 2008-03-25 | 2015-01-07 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
JP2009260316A (ja) * | 2008-03-26 | 2009-11-05 | Panasonic Electric Works Co Ltd | 半導体発光素子およびそれを用いる照明装置 |
US7791101B2 (en) * | 2008-03-28 | 2010-09-07 | Cree, Inc. | Indium gallium nitride-based ohmic contact layers for gallium nitride-based devices |
KR20090106299A (ko) * | 2008-04-05 | 2009-10-08 | 송준오 | 오믹접촉 광추출 구조층을 구비한 그룹 3족 질화물계반도체 발광다이오드 소자 및 이의 제조 방법 |
DE102008035900A1 (de) | 2008-04-30 | 2009-11-05 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip |
US9246073B2 (en) * | 2008-06-25 | 2016-01-26 | Panasonic Intellectual Property Management Co., Ltd. | Mounting structure, and method of manufacturing mounting structure |
JP5197186B2 (ja) * | 2008-06-30 | 2013-05-15 | 株式会社東芝 | 半導体発光装置 |
JP5305790B2 (ja) * | 2008-08-28 | 2013-10-02 | 株式会社東芝 | 半導体発光素子 |
JP5325506B2 (ja) * | 2008-09-03 | 2013-10-23 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
TWI373153B (en) * | 2008-09-22 | 2012-09-21 | Ind Tech Res Inst | Light emitting diode, and package structure and manufacturing method therefor |
US7922939B2 (en) * | 2008-10-03 | 2011-04-12 | The Board Of Trustees Of The University Of Illinois | Metal nanoparticle inks |
TWI380481B (en) * | 2009-01-13 | 2012-12-21 | Huga Optotech Inc | Light-emitting diode with high light-emitting efficiency |
US7952106B2 (en) * | 2009-04-10 | 2011-05-31 | Everlight Electronics Co., Ltd. | Light emitting diode device having uniform current distribution and method for forming the same |
US7732231B1 (en) * | 2009-06-03 | 2010-06-08 | Philips Lumileds Lighting Company, Llc | Method of forming a dielectric layer on a semiconductor light emitting device |
TW201104913A (en) * | 2009-07-31 | 2011-02-01 | Tekcore Co Ltd | Vertical light-emitting diode and manufacture method thereof |
-
2009
- 2009-06-25 US US12/491,976 patent/US20100327300A1/en not_active Abandoned
-
2010
- 2010-05-20 TW TW099116193A patent/TWI575773B/zh active
- 2010-05-21 JP JP2012516887A patent/JP2012531733A/ja active Pending
- 2010-05-21 CN CN201610406316.XA patent/CN106057987B/zh active Active
- 2010-05-21 CN CN201080028617.4A patent/CN102804417B/zh active Active
- 2010-05-21 EP EP10726287.5A patent/EP2446486B1/en active Active
- 2010-05-21 KR KR1020127001895A patent/KR20120101324A/ko not_active Application Discontinuation
- 2010-05-21 WO PCT/IB2010/052277 patent/WO2010150114A2/en active Application Filing
-
2012
- 2012-04-17 US US13/448,700 patent/US11695099B2/en active Active
-
2015
- 2015-09-25 JP JP2015187919A patent/JP6155310B2/ja active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6194743B1 (en) * | 1997-12-15 | 2001-02-27 | Agilent Technologies, Inc. | Nitride semiconductor light emitting device having a silver p-contact |
US20060273335A1 (en) * | 2004-07-12 | 2006-12-07 | Hirokazu Asahara | Semiconductor light emitting device |
Also Published As
Publication number | Publication date |
---|---|
US20100327300A1 (en) | 2010-12-30 |
CN106057987B (zh) | 2020-06-16 |
KR20120101324A (ko) | 2012-09-13 |
WO2010150114A3 (en) | 2011-02-17 |
JP6155310B2 (ja) | 2017-06-28 |
WO2010150114A2 (en) | 2010-12-29 |
JP2012531733A (ja) | 2012-12-10 |
JP2016015517A (ja) | 2016-01-28 |
US20120199863A1 (en) | 2012-08-09 |
TW201108465A (en) | 2011-03-01 |
CN102804417B (zh) | 2016-08-03 |
US11695099B2 (en) | 2023-07-04 |
EP2446486A2 (en) | 2012-05-02 |
CN102804417A (zh) | 2012-11-28 |
CN106057987A (zh) | 2016-10-26 |
EP2446486B1 (en) | 2016-09-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI575773B (zh) | 半導體發光裝置的接點 | |
JP4907842B2 (ja) | 平面全方位リフレクタを有する発光ダイオード | |
JP6942767B2 (ja) | 多孔質の反射性コンタクトを有するデバイス | |
JP5555174B2 (ja) | 光抽出構造体を有する半導体発光装置 | |
US8716728B2 (en) | Nitride semiconductor light-emitting diode device | |
TWI431798B (zh) | 具有導電性金屬基板之發光二極體 | |
JP5623074B2 (ja) | 光電子半導体部品 | |
CN103828073A (zh) | 发光二极管及制造该发光二极管的方法 | |
US8257989B2 (en) | Contact for a semiconductor light emitting device | |
US20140138729A1 (en) | High efficiency light emitting diode | |
JP2011517084A (ja) | 半導体発光装置に関する反射的コンタクト部 | |
TW201933623A (zh) | 連接貴金屬至氧化物之光學透明黏著層 |