JP5752855B2 - 発光装置の製造方法 - Google Patents
発光装置の製造方法 Download PDFInfo
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- JP5752855B2 JP5752855B2 JP2014523923A JP2014523923A JP5752855B2 JP 5752855 B2 JP5752855 B2 JP 5752855B2 JP 2014523923 A JP2014523923 A JP 2014523923A JP 2014523923 A JP2014523923 A JP 2014523923A JP 5752855 B2 JP5752855 B2 JP 5752855B2
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- 238000000034 method Methods 0.000 title claims description 57
- 238000004519 manufacturing process Methods 0.000 title claims description 43
- 229910002601 GaN Inorganic materials 0.000 claims description 141
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 134
- 229910052751 metal Inorganic materials 0.000 claims description 85
- 239000002184 metal Substances 0.000 claims description 85
- 229910052710 silicon Inorganic materials 0.000 claims description 79
- 239000010703 silicon Substances 0.000 claims description 79
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 78
- 239000000758 substrate Substances 0.000 claims description 65
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 45
- 239000005083 Zinc sulfide Substances 0.000 claims description 44
- 230000005496 eutectics Effects 0.000 claims description 15
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 claims description 10
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 8
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 7
- 238000007788 roughening Methods 0.000 claims description 5
- 229910052582 BN Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 402
- 235000012431 wafers Nutrition 0.000 description 116
- 239000010931 gold Substances 0.000 description 48
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 44
- 229910052737 gold Inorganic materials 0.000 description 44
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 43
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 42
- 230000008569 process Effects 0.000 description 41
- 230000004888 barrier function Effects 0.000 description 34
- 229910052709 silver Inorganic materials 0.000 description 24
- 239000004332 silver Substances 0.000 description 24
- 229910052697 platinum Inorganic materials 0.000 description 23
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 22
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 21
- 239000010936 titanium Substances 0.000 description 19
- 229910052719 titanium Inorganic materials 0.000 description 19
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 18
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 15
- 230000008018 melting Effects 0.000 description 15
- 238000002844 melting Methods 0.000 description 15
- 230000007547 defect Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 230000000903 blocking effect Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 238000005538 encapsulation Methods 0.000 description 9
- 229910052738 indium Inorganic materials 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000003892 spreading Methods 0.000 description 5
- 230000007480 spreading Effects 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 150000003057 platinum Chemical class 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- MVXIJRBBCDLNLX-UHFFFAOYSA-N 1,3-dichloro-2-(2-chlorophenyl)benzene Chemical compound ClC1=CC=CC=C1C1=C(Cl)C=CC=C1Cl MVXIJRBBCDLNLX-UHFFFAOYSA-N 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- 230000001427 coherent effect Effects 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002343 gold Chemical class 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 150000003378 silver Chemical class 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052987 metal hydride Inorganic materials 0.000 description 1
- 150000004681 metal hydrides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
電極が追加されて、このウェーハ接合構造は、個別の青色LED装置へと個片化される。各青色LED装置内部では、PAN構造のn形層は、LRL層の少なくとも一部分と直接接触している。LRL層は、LRL/n形層界面でのn形層のシート抵抗よりも低い、LRL/n形層界面でのシート抵抗を有する。n形層のシート抵抗は、15Ω/□超である。
電極が追加されて、このウェーハ接合構造は、個別のLED装置へと個片化される。各LED装置内では、LRLが完全に除去されたため、PAN構造のn形層は、LRLのいずれの部分とも接触していない。この第2の具体的実施例では、LRLは、n形層内の格子欠陥の濃度を低減する、第1の機能を果たす。
MOCVDは、有機化合物又は有機金属と、必要な化学物質を含有する金属水素化物との表面反応による、材料の、特に化合物半導体のエピタキシャル成長の化学気相成長法である。
一実施例では、ZnSは、MOSCVDチャンバ内で、350℃の成長温度、及び100Torrの成長圧力下で、ジメチル亜鉛(DMZn)と共に硫化水素を導入することによってシリコン基板上に成長する。第3に、ZnSの融点は1850℃であり、この温度はGaNの堆積の間に、ZnSが不安定になることを防ぐために十分に高い。最後に、AlN層もバッファ層の一部として使用される場合には、ZnS層は、バッファのAlNとシリコン基板との間の拡散バリアとしても役立つ。
Claims (6)
- シリコン基板上に硫化亜鉛(ZnS)層を直接形成する工程と、
前記ZnS層上にテルル化亜鉛(ZnTe)層を直接形成する工程と、
前記ZnTe層上にテンプレート層を形成する工程と、
前記テンプレート層上に、n型窒化ガリウム(GaN)層、p型窒化ガリウム(GaN)層、及び、前記n型GaN層と前記p型GaN層との間に形成された活性層を含む発光構造を形成する工程と、
前記発光構造上に導電キャリアをボンディングする工程と、
少なくとも前記シリコン基板、前記ZnS層、及び前記ZnTe層を除去する工程と、
を備えた発光装置の製造方法。 - シリコン基板上に硫化亜鉛(ZnS)層を直接形成する工程と、
前記ZnS層上に窒化ホウ素(BN)を直接形成する工程と、
前記BN層上にテンプレート層を形成する工程と、
前記テンプレート層上に、n型窒化ガリウム(GaN)層、p型窒化ガリウム(GaN)層、及び、前記n型GaN層と前記p型GaN層との間に形成された活性層を含む発光構造を形成する工程と、
前記発光構造上に導電キャリアをボンディングする工程と、
少なくとも前記シリコン基板、前記ZnS層、及び前記BN層を除去する工程と、
を備えた発光装置の製造方法。 - 前記導電キャリアは、前記発光構造上に共晶接合金属層を介してボンディングされる請求項1または2のいずれかに記載の発光装置の製造方法。
- 前記除去する工程により露出させた表面を粗化する工程を更に備えた請求項1〜3のいずれか1つに記載の発光装置の製造方法。
- 前記n型GaN層は、少なくとも2000ナノメートルの厚さを有する請求項1〜4のいずれか1つに記載の発光装置の製造方法。
- 前記ZnS層は、厚さ100ナノメートル未満である請求項1〜5のいずれか1つに記載の発光装置の製造方法。
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US7791101B2 (en) | 2008-03-28 | 2010-09-07 | Cree, Inc. | Indium gallium nitride-based ohmic contact layers for gallium nitride-based devices |
KR100994643B1 (ko) * | 2009-01-21 | 2010-11-15 | 주식회사 실트론 | 구형 볼을 이용한 화합물 반도체 기판의 제조 방법과 이를 이용한 화합물 반도체 기판 및 화합물 반도체 소자 |
JP2010251390A (ja) * | 2009-04-13 | 2010-11-04 | Oki Electric Ind Co Ltd | 発光ダイオード及びその製造方法 |
US20110244663A1 (en) * | 2010-04-01 | 2011-10-06 | Applied Materials, Inc. | Forming a compound-nitride structure that includes a nucleation layer |
US9012939B2 (en) * | 2011-08-02 | 2015-04-21 | Kabushiki Kaisha Toshiba | N-type gallium-nitride layer having multiple conductive intervening layers |
-
2011
- 2011-08-03 US US13/197,765 patent/US20130032810A1/en not_active Abandoned
-
2012
- 2012-06-06 WO PCT/US2012/041123 patent/WO2013019310A2/en active Application Filing
- 2012-06-06 JP JP2014523923A patent/JP5752855B2/ja not_active Expired - Fee Related
- 2012-06-07 TW TW101120369A patent/TWI533464B/zh not_active IP Right Cessation
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2014
- 2014-01-17 US US14/158,426 patent/US9159869B2/en active Active
Also Published As
Publication number | Publication date |
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US9159869B2 (en) | 2015-10-13 |
TW201314944A (zh) | 2013-04-01 |
TWI533464B (zh) | 2016-05-11 |
JP2014524660A (ja) | 2014-09-22 |
WO2013019310A2 (en) | 2013-02-07 |
US20130032810A1 (en) | 2013-02-07 |
WO2013019310A3 (en) | 2013-04-25 |
US20140134765A1 (en) | 2014-05-15 |
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