JP2004312037A - 多層拡張ドレイン構造を有する高電圧トランジスタを作製する方法 - Google Patents
多層拡張ドレイン構造を有する高電圧トランジスタを作製する方法 Download PDFInfo
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Abstract
【解決手段】 拡張ドレイン領域を有する高電圧トランジスタを作製する方法を提供は、第一の導電型である基板上に第一の導電型であるエピタキシャル層を形成し、そして、エピタキシャル層をエッチングして、エピタキシャル層の第一及び第二の側壁部を形成する一対の離間した溝部を形成することを含む。各溝部の一部には、第一及び第二の側壁部をカバーするように、誘電体層が充填される。
そして、溝部の残りの部分に導電材料が充填されて、基板及びエピタキシャル層から絶縁された第一及び第二のフィールドプレート部材が形成される。
【選択図】 図5A
Description
基板上に第一の導電型で上面を有するエピタキシャル層を形成し、
前記エピタキシャル層をエッチングして、第一及び第二の側壁部があるメサを規定する一対の離間した溝部を形成し、
各溝部を部分的に充填するとともに第一及び第二の側壁部をカバーする誘電体層を各溝部に形成し、
溝部の残りの部分を導電材料で充填して、基板及びエピタキシャル層から絶縁された第一及び第二のフィールドプレート部材を形成する、
ことを具備することを特徴とする。
基板上に第一の導電型で上面を有するエピタキシャル層を形成し、
エピタキシャル層内に第一の導電型でエピタキシャル層の上面に配置されたソース領域、および第一の導電型とは異なる第二の導電型のボディ領域を形成し、
エピタキシャル層に第一及び第二の側壁部を有するメサを規定する離間した一対の溝部を形成し、
第一及び第二の側壁部をカバーする誘電体層を各溝部に形成し、
メサから絶縁された導電材料からなるフィールドプレート部材を溝部に形成し、そして、
メサ内で絶縁ゲート部材の近傍でボディ領域を通るチャネルが規定されるように、各フィールドプレート部材とメサとの間に絶縁ゲート部材を形成する、
ことを具備することを特徴とする。
第一の方向とされた複数の平行に配列されたドリフト領域を形成することを含み、当該ドリフト領域のそれぞれは、絶縁層と導電層が交互に配置された第一の導電型にドーピングされた半導体層を含み、当該導電層は前記ドーピングされた半導体層から前記絶縁層によって絶縁されており、前記導電層は高電圧トランジスタのフィールドプレート部材を含んでおり、
第一の導電型であるソース領域、第一の導電型とは異なる第二の導電型で、ソース領域をドリフト領域から分離するボディ領域を形成することを含み、そして、
ボディ領域内のソース領域とドリフト領域の間にチャネルを規定する絶縁ゲートをボディ領域近傍に形成する、
ことを含むことを特徴とする。
ソース領域に接続されたソース電極を形成する、
ことを含むことができる。
Claims (55)
- 基板上に第一の導電型でエピタキシャル層を形成し、
第一及び第二の側壁部及び上面を有するメサを規定するよう前記エピタキシャル層をエッチングし、
第一及び第二の側壁部をそれぞれカバーする第一及び第二の誘電体層を形成し、
第一及び第二の誘電体層によってメサの第一及び第二の側壁部からそれぞれ絶縁された、導電性材料からなる第一及び第二のフィールドプレート部材を形成し、
メサに、第一の導電型で前記メサの上面に配置されたソース領域を形成すると共に、第一の導電型と反対の第二の導電型のボディ領域を形成し、
前記ボディ領域の近傍に、絶縁ゲート部材を形成する、
ことを具備する、高電圧トランジスタを作製する方法。 - 前記絶縁ゲート部材は、第一及び第二の誘電体層に形成される請求項1に記載の方法。
- さらに、ソース領域、ゲート部材、フィールドプレート部材とそれぞれ接続するソース電極、ゲート電極、フィールドプレート電極を形成することを含む請求項1に記載の方法。
- 第一の導電型はn型である、請求項1に記載の方法。
- 前記メサを、基板近くに比べて上面近くの方が低いドーピング濃度となるよう形成する、請求項1に記載の方法。
- 前記ボディ領域は、0.5ミクロンから3.0ミクロンの範囲の厚さを有している、請求項1に記載の方法。
- 前記誘電体層を、フィールドプレート部材とメサとの間隔が、基板近くに比べてエピタキシャル層の上面近くの方が狭くなるように形成する、請求項1に記載の方法。
- 前記誘電体層は二酸化ケイ素からなる、請求項1に記載の方法。
- 前記誘電体層のそれぞれは、横方向の幅がメサの横方向の幅よりも大きい、請求項1に記載の方法。
- 基板上に第一の導電型で上面を有するエピタキシャル層を形成し、
前記エピタキシャル層に、第一の導電型で前記エピタキシャル層の上面に配置されたソース領域、及び、第一の導電型と反対の第二の導電型のボディ領域を形成し、
エピタキシャル層に、第一及び第二の側壁部を有するメサを規定する離間した一対の溝部を形成し、
前記第一及び第二の側壁部それぞれの上に、メサの横方向の幅よりも大きな横方向の幅を有する誘電体層を形成し、
前記溝部に、メサから絶縁された導電性材料からなるフィールドプレート部材を形成し、
メサ内でボディ領域を横切って絶縁ゲート部材の近傍にチャネル領域が規定されるように、フィールドプレート部材とメサとの間の誘電体層に絶縁ゲート部材を形成し、
ソース領域、ゲート部材、フィールドプレート部材とそれぞれ接続するソース電極、ゲート電極、フィールドプレート電極を形成する、
ことを具備する高電圧トランジスタを作製する方法。 - 第一の導電型はn型である、請求項10に記載の方法。
- 前記エピタキシャル層を、線形的に変化するドーピング・プロファイルを有するよう形成する、請求項10に記載の方法。
- 前記エピタキシャル層のドーピング濃度を、基板近くに比べて上面近くの方が低くなるよう形成する、請求項10に記載の方法。
- 前記ボディ領域は、0.5ミクロンから3.0ミクロンの範囲の厚さを有している、請求項10に記載の方法。
- フィールドプレート部材とメサとの間隔が、基板近くに比べてエピタキシャル層の上面近くの方が狭くなるように、誘電体層及びフィールドフレート部材を形成する、請求項10に記載の方法。
- メサの横方向の幅を、溝部の深さの20%よりも小さくする、請求項10に記載の方法。
- 前記誘電体層は二酸化ケイ素からなる、請求項10に記載の方法。
- 基板上に第一の導電型のエピタキシャル層を形成し、
第一及び第二の側壁部及び上面を有するメサを規定するように前記エピタキシャル層をエッチングし、
第一及び第二の側壁部をそれぞれカバーするとともに、それぞれがメサの横方向の幅よりも大きな横方向の幅を有する第一及び第二の誘電体層を形成し、
第一及び第二の誘電体層によってメサの第一及び第二の側壁部からそれぞれ絶縁された、導電性材料からなる第一及び第二のフィールドプレート部材を形成し、
メサに、第一の導電型で前記メサの上面に配置されたソース領域、及び、第一の導電型と反対の第二の導電型のボディ領域を形成し、そして
前記ボディ領域の横方向の近傍に、絶縁ゲート部材を形成する、
ことを具備する、高電圧トランジスタを作製する方法。 - 前記絶縁ゲートを第一及び第二の誘電体層に形成する、請求項18に記載の方法。
- さらに、ソース領域、ゲート部材、フィールドプレート部材それぞれと接続するソース電極、ゲート電極、フィールドプレート電極を形成することを含む請求項18に記載の方法。
- 第一の導電型はn型である、請求項18に記載の方法。
- 前記メサを、基板近くに比べて上面近くの方が低いドーピング濃度となるよう形成する、請求項18に記載の方法。
- 前記ボディ領域は、0.5ミクロンから3.0ミクロンの範囲の厚さを有している、請求項18に記載の方法。
- 前記誘電体層を、フィールドプレート部材とメサとの間隔が、基板近くに比べてメサの上面近くの方が狭くなるように形成する、請求項18に記載の方法。
- 基板上に、第一の導電型のエピタキシャル層を形成し、
幅、高さ、第一及び第二の側壁部、及び上面を有し、前記幅が高さの10%よりも小さくするようなメサを規定するために前記エピタキシャル層をエッチングし、
第一及び第二の側壁部をそれぞれカバーする第一及び第二の誘電体層を形成し、
第一及び第二の誘電体層によってメサの第一及び第二の側壁部からそれぞれ絶縁された、導電性材料からなる第一及び第二のフィールドプレート部材を形成し、
メサに、第一の導電型で前記メサの上面に配置されたソース領域を形成すると共に、第一の導電型と反対の第二の導電型のボディ領域を形成し、
前記ボディ領域の横方向近傍に絶縁ゲート部材を形成する、
ことを具備する高電圧トランジスタを作製する方法。 - 前記絶縁ゲートを、第一及び第二の誘電体層に形成する、請求項25に記載の方法。
- 前記メサを、基板近くに比べて上面近くの方が低いドーピング濃度となるよう形成する、請求項25に記載の方法。
- 前記誘電体層を、フィールドプレート部材とメサとの間隔が、基板近くに比べてメサの上面近くの方が狭くなるように形成する、請求項25に記載の方法。
- 基板上に第一の導電型で上面を有するエピタキシャル層を形成し、
前記エピタキシャル層をエッチングして、第一及び第二の側壁部があるメサを規定する一対の離間した溝部を、メサの横方向の幅がその溝部の深さの20%よりも小さくなるように形成し、
各溝部を部分的に充填するとともに第一及び第二の側壁部をカバーする誘電体層を各溝部に形成し、
溝部の残りの部分を導電材料で充填して、基板及びエピタキシャル層から絶縁された第一及び第二のフィールドプレート部材を形成する、
ことを具備する高電圧トランジスタの拡張ドレイン領域を作製する方法。 - 前記エピタキシャル層を、基板近くに比べて上面近くの方が低いドーピング濃度となるよう形成する、請求項29に記載の方法。
- 前記エピタキシャル層を、線形的に変化するドーピング・プロファイルを有するように形成する、請求項29に記載の方法。
- さらに、前記エピタキシャル層の上面に第一の導電型のソース領域を形成し、前記拡張ドレイン領域が当該ソース領域と基板との間に規定されるようにした、請求項29に記載の方法。
- 前記基板は第一の導電型である請求項29に記載の方法。
- 前記溝部を、前記エピタキシャル層を通って基板へ延びるようにする、請求項29に記載の方法。
- 前記誘電体層の横方向の幅を、前記メサの横方向の幅よりも大きくする、請求項29に記載の方法。
- 第一の方向に沿って平行に配列された第一の導電型からなる複数のドリフト領域を形成することを含み、各ドリフト領域は、第一の方向と実質的に直交する第二の方向において絶縁フィールドプレート部材により分離されており、
第一の導電型であるソース領域を形成すると共に、第一の導電型と反対の第二の導電型であって前記ソース領域を前記ドリフト領域から分離するボディ領域を形成することを含み、そして
ボディ領域近傍に絶縁ゲートを形成する、
ことを含む、基板上に高電圧トランジスタを作製する方法。 - さらに、各ドリフト領域と接続する第一の導電型のドレイン領域を形成することを含む、請求項36に記載の方法。
- 前記基板を第一の導電型とする請求項36に記載の方法。
- 前記第一の導電型はn型である請求項36に記載の方法。
- 前記基板は平坦な底面を有し、前記第一の方向は当該平坦な底面に実質的に平行な方向である、請求項36に記載の方法。
- 前記基板は平坦な底面を有し、前記第一の方向は当該平坦な底面に対して実質的に垂直な方向である、請求項36に記載の方法。
- 各ドリフト領域を、線形的に変化するドーピング・プロファイルを有するようにする、請求項36に記載の方法。
- 基板上に第一の導電型のエピタキシャル層を形成し、
第一及び第二の側壁部及び上面を有するメサを規定するよう、前記エピタキシャル層をエッチングし、
第一及び第二の側壁部をカバーする誘電体材料を形成し、
誘電体材料によって前記メサの第一及び第二の側壁部からそれぞれ絶縁されている導電性材料の第一及び第二のフィールドプレート部材であって、メサの第一及び第二の側壁部に対してそれぞれ実質的に平行に形成され、各々が第一及び第二の側壁部からメサの横方向の幅よりも大きな横方向の間隔だけ分離した第一及び第二のフィールドプレート部材を形成する、
ことを含む高電圧トランジスタの拡張ドレイン領域を作製する方法。 - さらに、ドレイン電極の形成の前に基板を薄くすることを含む、請求項43に記載の方法。
- さらに、ソース領域と接続するソース電極及び基板と接続するドレイン電極を形成することを含む請求項43に記載の方法。
- さらに、ソース領域と基板との間に拡張ドレイン領域が規定されるように、前記上面に第一の導電型のソース領域を形成することを含む請求項43に記載の方法。
- さらに、ソース領域に接続するソース電極、及び基板に接続するドレイン電極を形成することを含む請求項46に記載の方法。
- 前記メサを、線形的に変化するドーピング・プロファイルを有するよう形成する、請求項43に記載の方法。
- 基板上に、第一の導電型で上面を有するエピタキシャル層を形成し、
前記エピタキシャル層に、第一の導電型で前記エピタキシャル層の上面に配置されたソース領域、及び、第一の導電型と反対の第二の導電型のボディ領域を形成し、
エピタキシャル層に、第一及び第二の側壁部を有するメサを規定する離間した一対の溝部を形成し、
前記第一及び第二の側壁部それぞれの上に誘電体層を形成し、
前記溝部に、メサから絶縁された導電性材料からなるフィールドプレート部材を形成し、
メサ内でボディ領域を横切るように絶縁ゲート部材の近傍にチャネル領域が規定されるように、フィールドプレート部材とメサとの間の誘電体層に絶縁ゲート部材を形成する、
ことを含む高電圧トランジスタを作製する方法。 - さらに、ソース領域、ゲート部材、フィールドプレート部材それぞれ接続するソース電極、ゲート電極、フィールドプレート電極を形成することを含む、請求項49に記載の方法。
- 前記エピタキシャル層を、線形的に変化するドーピング・プロファイルを有するよう形成する、請求項49に記載の方法。
- 前記エピタキシャル層のドーピング濃度を、基板近くに比べて上面近くの方が低くなるよう形成する、請求項49に記載の方法。
- 前記誘電体層及びフィールドプレート部材を、フィールドプレート部材とメサとの間隔が、基板近くに比べてエピタキシャル層の上面近くの方が狭くなるよう形成する、請求項49に記載の方法。
- 前記メサの横方向の幅を、溝部の深さの20%よりも小さくする、請求項49に記載の方法。
- 前記誘電体層の横方向の幅を、前記メサの横方向の幅よりも大きくする請求項49に記載の方法。
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JP4744101B2 (ja) | 2011-08-10 |
US20120015491A1 (en) | 2012-01-19 |
EP2264747A3 (en) | 2011-02-02 |
US6838346B2 (en) | 2005-01-04 |
US7998817B2 (en) | 2011-08-16 |
EP1291907A3 (en) | 2004-02-04 |
US6635544B2 (en) | 2003-10-21 |
JP5419913B2 (ja) | 2014-02-19 |
EP2264746A3 (en) | 2011-01-26 |
EP2270843A2 (en) | 2011-01-05 |
EP2270843A3 (en) | 2011-01-26 |
US7253042B2 (en) | 2007-08-07 |
US20090233407A1 (en) | 2009-09-17 |
EP2264747A2 (en) | 2010-12-22 |
US20030060001A1 (en) | 2003-03-27 |
EP2264746A2 (en) | 2010-12-22 |
US20070293002A1 (en) | 2007-12-20 |
US20030057524A1 (en) | 2003-03-27 |
EP1291907A2 (en) | 2003-03-12 |
US6750105B2 (en) | 2004-06-15 |
EP1536464A2 (en) | 2005-06-01 |
JP2003204064A (ja) | 2003-07-18 |
US6667213B2 (en) | 2003-12-23 |
US20050104121A1 (en) | 2005-05-19 |
US8940605B2 (en) | 2015-01-27 |
US20030049930A1 (en) | 2003-03-13 |
US7745291B2 (en) | 2010-06-29 |
EP1536464A3 (en) | 2008-08-06 |
JP2011159987A (ja) | 2011-08-18 |
US20040082122A1 (en) | 2004-04-29 |
JP4284428B2 (ja) | 2009-06-24 |
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