JP5452195B2 - 半導体装置及びそれを用いた電力変換装置 - Google Patents
半導体装置及びそれを用いた電力変換装置 Download PDFInfo
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- JP5452195B2 JP5452195B2 JP2009275047A JP2009275047A JP5452195B2 JP 5452195 B2 JP5452195 B2 JP 5452195B2 JP 2009275047 A JP2009275047 A JP 2009275047A JP 2009275047 A JP2009275047 A JP 2009275047A JP 5452195 B2 JP5452195 B2 JP 5452195B2
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
Description
図1に、本発明の半導体装置の実施例1であるIGBTの断面構造を示す。
図5は、本発明の実施例2のIGBTの断面構造を示すものである。実施例2に示すIGBTの特徴は、絶縁膜407を周辺領域(図示せず:チップの周辺領域)での絶縁膜403(図6参照)よりも薄くすることで、エミッタ電極404によるフィールドプレート効果を高め、更なる高耐圧化が可能なことである。図のように、ゲート電極401の角部(ゲート電極401の下側のエミッタ電極404に近い角部)とエミッタ電極404の端部(ゲート電極401に最も近い角部)が近いほど、フィールドプレート効果は高くなり、IGBTの高耐圧化ができる。
図7は、本発明の実施例3のIGBTの断面構造を示すものである。実施例3のIGBTの特徴は、トレンチ424が階段状に2段になっており、エミッタ電極404のn-ドリフト層104側端部がゲート電極401の角部よりも下に設けられていることである。
図8から図10は、本発明の実施形態4のIGBTの断面構造を示すものである。実施例4のIGBTの特徴は、トレンチ423の下にp層を挿入することで、p層から空乏層が伸びて、トレンチコーナー部の電界を緩和するため、ゲート電極401の角部の電界を緩和でき、更なる高耐圧化が可能なことである。図8では、トレンチ423の下の一部にp層408が、図9ではゲート電極401の角部を覆うようにp層409が、図10では、p層409内にn層410がそれぞれ挿入されている。図10のn層410は、ターンオン時にフローティングp層409に流れ込むホールを防止する。つまり、p層の内部にn層を設けることで、ホールはn層の中には入り込まないため、フローティング層に入り込むホールが低減されるので、フローティングp層の電位の持ち上がりを抑制する効果がある。
図11から図13は、本発明の実施例5のIGBTの断面構造を示すものである。実施例5のIGBTの特徴は、pチャネル層106の下側に、p層418を設けることで、ゲート電極401の角部の電界が緩和され、更なる高耐圧化が可能なことである。図11では、pチャネル層の下にp層418が、図12では、pチャネル層106の両側のゲート電極401にかかるp層419を、図13では片側のゲート電極401にかかるp層420がそれぞれ挿入された構造になっている。
図14は、本発明の実施例6のIGBTの断面構造を示すものである。実施例6のIGBTの特徴は、トレンチ423の上に、絶縁膜426とポリシリコン電極411からなる容量が形成されていることである。ポリシリコン電極411は、エミッタ電極404に接続され、ターンオン時にトレンチ423の下部を流れるホール電流の一部は、上記容量を充電するのに用いられ、トレンチ423の下部の電位の持ち上がりが抑制されて、ゲート電位の持ち上がりを低減できる効果がある。また、ポリシリコン電極411がフィールドプレートとして働き、ゲート電極401の角部の電界を緩和し、高耐圧化できる効果もある。
図15から図19は、本発明の実施例7のIGBTの断面構造を示すものである。図15では、ポリシリコン電極412をゲート電極401と同様に、トレンチ425の側壁に形成し、ゲート絶縁膜402とポリシリコン電極412からなる容量を、エミッタ電極404に接続することで、ターンオン時のゲート電位の持ち上がりを低減できる効果がある。図16は、ポリシリコン電極412の間にp層413を設けることで、ポリシリコン電極412の角部にかかる電界を緩和し、高耐圧化が可能となる。図17は、p層413内にn層414を設けることで、ターンオン時にフローティングであるp層413内に流れ込むホールを防止し、フローティングp層の電位の持ち上がりを抑制する効果がある。図18は、ポリシリコン電極412の角部を覆うようにp層415が設けており、高耐圧化が可能となる。また、図19は、p層415内にn層416を設けることで、ターンオン時にフローティングであるp層415内に流れ込むホールを防止し、フローティングp層の電位の持ち上がりを抑制する効果がある。
図20は,本発明の実施例8のIGBTの断面構造を示すものである。実施例8の特徴は、pチャネル層106の下に、n層421が挿入されている点である。このn層421は、エミッタ電極404に流れ込むホールにとって障壁となるため、エミッタ近傍でのホール濃度が増加し、更なるオン電圧の低減が可能となる。
図21は、本発明の実施例9のIGBTの断面構造を示すものである。実施例9の特徴は、n層421の下にさらにp層422が挿入されている点である。実施例8の構造においては、n層421のキャリア濃度を高めるほど、ホールに対する障壁が高くなりオン電圧の低減効果は高まるが、オフ時のn層421での電界強度が強くなり、耐圧が低下することが考えられる。
図22は、上述した各実施例で説明したIGBTを採用した電力変換装置を示す回路図である。
101 コレクタ端子
102 pコレクタ層
103 nバッファ層
104 n-ドリフト層
105 フローティングp層
106 pチャネル層
107 nエミッタ層
108 pコンタクト層
109,301,401 ゲート電極
110,402 ゲート絶縁膜
113,302,403,407,417 絶縁膜
114,404 エミッタ電極
115 ゲート端子
116,119 エミッタ端子
201 抵抗
405,408,409,413,415,418,419,420,422 p層
406 フローティング電極
410,414,416,421 n層
411,412 ポリシリコン電極
423,424,425 トレンチ
426 絶縁膜
501,502 ホトレジスト
601 ゲート駆動回路
602 IGBT
603 ダイオード
604,605 入力端子
606,607,608 出力端子
Claims (15)
- 第1導電型の第1半導体層と、該第1半導体層の表面付近に形成された第2導電型の第2半導体層と、前記第1半導体層に隣接し、前記第2半導体層とは逆側の表面付近に形成された第2導電型の第3半導体層と、該第3半導体層の上部に選択的に設けられた第1導電型の第4半導体層と、該第4半導体層と前記第3半導体層を貫き、前記第1半導体層に達するトレンチと、該トレンチの内壁に沿って設けられたゲート絶縁層と、前記トレンチ内に設けられた絶縁層と、前記ゲート絶縁層の内側空間に充填された第1導電層と、前記絶縁層の表面に設けられた第2導電層とを備え、前記第1導電層は、前記トレンチ内で前記絶縁層と第2導電層を挟んで分割された断面構造を有し、前記トレンチの幅aは、該トレンチを形成しない領域の幅bよりも広く形成された、絶縁ゲート型バイポーラトランジスタであって、
前記トレンチ内に、絶縁膜を介して第3導電層が形成され、
前記第1導電層と前記第3導電層との間には前記絶縁層が位置し、
前記絶縁層は、前記ゲート絶縁層より厚く形成され、
前記絶縁ゲート型バイポーラトランジスタのアクティブ領域の絶縁層が、前記絶縁ゲート型バイポーラトランジスタの周辺領域の絶縁層より薄く形成されていることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、前記絶縁膜の厚さが前記絶縁層よりも薄いことを特徴とする半導体装置。
- 請求項1に記載の半導体装置において、
前記第1導電層は、前記ゲート絶縁層と前記絶縁層で覆われていることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記半導体装置のアクティブ領域における絶縁層の厚みは、300nm〜1000nmであることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記トレンチが階段状で、かつ2段に形成されていることを特徴とする半導体装置。 - 請求項5に記載の半導体装置において、
前記階段状で2段に形成されているトレンチ内の前記第2導電層の前記第1半導体層側端部が、前記第1導電層の前記第1半導体層側端部より第1半導体層側に位置していることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記トレンチの前記第1半導体層側に第2導電型の第5半導体層を設けたことを特徴とする半導体装置。 - 請求項7に記載の半導体装置において、
前記第5半導体層は、前記第1導電層の前記第1半導体層側端部を覆うように設けられていることを特徴とする半導体装置。 - 請求項7又は8に記載の半導体装置において、
前記第5半導体層内に第1導電型の第6半導体層が設けられていることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記第3半導体層から前記第1半導体層側に延びる第2導電型の第7半導体層を設けたことを特徴とする半導体装置。 - 請求項10に記載の半導体装置において、
前記第7半導体層は、前記第3半導体層の両側にある前記第1導電層の前記第1半導体層側端部に少なくとも一部が掛かっていることを特徴とする半導体装置。 - 請求項10に記載の半導体装置において、
前記第7半導体層は2層形成され、それぞれの前記第7半導体層が、前記第3半導体層の両側にある各前記第1導電層の前記第1半導体層側端部に少なくとも一部が掛かっていることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記第3半導体層の前記第1半導体層側に第1導電型の第10半導体層を設けたことを特徴とする半導体装置。 - 請求項13に記載の半導体装置において、
前記第10半導体層の前記第1半導体層側に、更に第2導電型の第11半導体層を設けたことを特徴とする半導体装置。 - 一対の入力端子と、該入力端子間に接続され、複数の半導体スイッチング素子が直列接続される複数の直列接続回路と、該複数の直列接続回路の各直列接続点に接続される複数の出力端子とを備え、前記複数の半導体スイッチング素子がオン・オフすることにより電力の変換を行う電力変換装置において、前記複数の半導体スイッチング素子の各々が、請求項1乃至14のいずれかに記載の半導体装置であることを特徴とする電力変換装置。
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US20110133718A1 (en) | 2011-06-09 |
CN102136490A (zh) | 2011-07-27 |
US8809903B2 (en) | 2014-08-19 |
EP2365531B1 (en) | 2020-03-04 |
US8546847B2 (en) | 2013-10-01 |
CN102136490B (zh) | 2013-11-27 |
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