JP5354808B2 - 基板上に高電圧トランジスタを作製する方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims description 22
- 210000000746 body region Anatomy 0.000 claims description 51
- 239000004065 semiconductor Substances 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 96
- 239000000463 material Substances 0.000 description 14
- 238000012545 processing Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
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- 239000002184 metal Substances 0.000 description 6
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- 238000002513 implantation Methods 0.000 description 4
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- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- JCALBVZBIRXHMQ-UHFFFAOYSA-N [[hydroxy-(phosphonoamino)phosphoryl]amino]phosphonic acid Chemical compound OP(O)(=O)NP(O)(=O)NP(O)(O)=O JCALBVZBIRXHMQ-UHFFFAOYSA-N 0.000 description 1
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- 238000004544 sputter deposition Methods 0.000 description 1
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Description
基板の上面上を覆う絶縁層を含み、
前記絶縁層の上に配置された第一の導電型のドレイン領域を含み、
前記絶縁層の上に配置された第一の導電型とは反対の第二の導電型のボディ領域を含み、
前記絶縁層の上に配置された平行に配列された複数の第一の導電型のドリフト領域を含み、各ドリフト領域はドレイン領域からボディ領域へ向かう第一の方向に延在し、隣接するドリフト領域は第一の方向と直交する第二の方向において誘電体層によって分離されており、
各誘電体層の中に配置されたフィールドプレート部材を含み、該フィールドプレート部材はドリフト領域から完全に絶縁されており、
ボディ領域に隣接しかつドリフト領域からは離間した第一の導電型のソース領域を含み、そして、
ボディ領域の近くに配置された絶縁ゲート部材を含み、チャネル領域が絶縁ゲート部材の近くのソース領域と少なくとも一つのドリフト領域の間のボディ領域内に規定される、
ことを特徴とする。
ソース領域と電気的に接続されたソース電極と、
を含むものである。
第一の導電型のドレイン領域を含み、
第一の導電型の少なくとも一つのソース領域を含み、
前記ドレイン領域から前記少なくとも一つのソース領域へ向かう第一の方向に平行に延在する第一の導電型の複数のドリフト領域を含んでおり、隣り合うドレイン領域は第一の方向と直交する第二の方向において誘電体層によって分離され、
誘電体層内に配置された少なくとも一つのフィールドプレート部材を含んでおり、当該少なくとも一つのフィールドプレート部材はドリフト領域から完全に絶縁されている、
ことを特徴とする。
ドレイン領域と電気的に接続されたドレイン電極と、
を含むものである。
Claims (12)
- 基板上に高電圧トランジスタを作製する方法であって、
前記基板の平坦な底面に垂直な第一の方向に平行に延在する複数の平行に配列されたドリフト領域を形成する段階であって、各ドリフト領域が第一導電型のドープした半導体層から成り、前記ドリフト領域間には絶縁層と導電層とが介在しており、前記導電層が、前記絶縁層によって、前記ドープした半導体層から絶縁されており、前記導電層の各々が、 高電圧トランジスタのフィールドプレート部材から成る、前記段階と、
第一の導電型を有するソース領域、及び前記第一の導電型とは反対の第二の導電型を有していて、前記ソース領域を前記ドリフト領域から分離するボディ領域を形成する段階と、
前記ボディ領域に隣接し且つ前記ソース領域と前記ドリフト領域との間のボディ領域内にチャネルを定める絶縁ゲートを形成する段階と、を含み、
前記ドリフト領域を形成する工程が、
前記基板上に、上面を有する第一の導電型のエピタキシャル層を形成し、
前記エピタキシャル層をエッチングして、第一及び第二の側壁部を有するメサを規定する一対の離間した溝部を形成し、
前記溝部の各々内に誘電体層を形成して、前記溝部の各々を部分的に充填して、前記第一及び第二の側壁部を被覆し、
前記溝部の残りの部分を導電材料で充填して、前記基板及びエピタキシャル層から絶縁された第一及び第二のフィールドプレート部材を形成することにより、
高電圧トランジスタの拡張ドレイン領域となる前記ドリフト領域を製造することから成り、
前記誘電体層及び前記フィールドプレード部材が、前記フィールドプレート部材と前記エピタキシャル層との間隔が基板近くに比べて前記エピタキシャル層の上面近くの方が狭くなるように形成される、
前記方法。 - 前記ドリフト領域のそれぞれのドープした半導体層に接続された第一の導電型のドレイン領域を形成することを更に含む請求項1記載の方法。
- 前記基板が第一の導電型を有する請求項1又は2に記載の方法。
- 前記ドレイン領域に結合したドレイン電極を形成し、
前記ソース領域に結合したソース電極を形成することを更に含む請求項1乃至3何れか一項記載の方法。 - 前記第一の導電型がn型である請求項1乃至4何れか一項記載の方法。
- 前記ドリフト領域のそれぞれが、線形的に変化するドーピング・プロファイルを有する請求項1乃至5何れか一項記載の方法。
- 前記絶縁層が、二酸化ケイ素からなる請求項1乃至6何れか一項記載の方法。
- 前記絶縁層のそれぞれが、2μm乃至5μmの範囲の横方向厚さを有し、前記導電層の各々の横方向厚さが、0.5μm乃至1.0μmである請求項1乃至7何れか一項記載の方法。
- 前記エピタキシャル層のドーピング濃度を、基板近くに比べて上面近くの方が低く、更に、前記エピタキシャル層が、線形的に変化するドーピング・プロファイルを有して形成される請求項1記載の方法。
- 前記溝部が、前記エピタキシャル層を通って前記基板へ延びている請求項1乃至9何れか一項記載の方法。
- 前記誘電体層の横方向の幅が、前記メサの横方向の幅よりも広い請求項1、9乃至10何れか一項記載の方法。
- 前記誘電体層の横方向の幅が、前記メサの横方向の幅の1.6乃至12.5倍である請求項1、9乃至11何れか一項記載の方法。
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Families Citing this family (114)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6653691B2 (en) * | 2000-11-16 | 2003-11-25 | Silicon Semiconductor Corporation | Radio frequency (RF) power devices having faraday shield layers therein |
US7221011B2 (en) * | 2001-09-07 | 2007-05-22 | Power Integrations, Inc. | High-voltage vertical transistor with a multi-gradient drain doping profile |
US6573558B2 (en) * | 2001-09-07 | 2003-06-03 | Power Integrations, Inc. | High-voltage vertical transistor with a multi-layered extended drain structure |
US6635544B2 (en) * | 2001-09-07 | 2003-10-21 | Power Intergrations, Inc. | Method of fabricating a high-voltage transistor with a multi-layered extended drain structure |
US6555873B2 (en) | 2001-09-07 | 2003-04-29 | Power Integrations, Inc. | High-voltage lateral transistor with a multi-layered extended drain structure |
US7786533B2 (en) * | 2001-09-07 | 2010-08-31 | Power Integrations, Inc. | High-voltage vertical transistor with edge termination structure |
US6555883B1 (en) * | 2001-10-29 | 2003-04-29 | Power Integrations, Inc. | Lateral power MOSFET for high switching speeds |
US7576388B1 (en) * | 2002-10-03 | 2009-08-18 | Fairchild Semiconductor Corporation | Trench-gate LDMOS structures |
DE10313712B4 (de) * | 2003-03-27 | 2008-04-03 | Infineon Technologies Ag | Laterales mittels Feldeffekt steuerbares Halbleiterbauelement für HF-Anwendungen |
US8133789B1 (en) | 2003-04-11 | 2012-03-13 | Purdue Research Foundation | Short-channel silicon carbide power mosfet |
WO2004102672A1 (en) * | 2003-05-13 | 2004-11-25 | Cambridge Semiconductor Limited | Lateral soi semiconductor device |
GB0314390D0 (en) * | 2003-06-20 | 2003-07-23 | Koninkl Philips Electronics Nv | Trench field effect transistor structure |
US7023050B2 (en) * | 2003-07-11 | 2006-04-04 | Salama C Andre T | Super junction / resurf LDMOST (SJR-LDMOST) |
DE10339488B3 (de) * | 2003-08-27 | 2005-04-14 | Infineon Technologies Ag | Laterales Halbleiterbauelement mit einer wenigstens eine Feldelektrode aufweisenden Driftzone |
GB0326237D0 (en) * | 2003-11-11 | 2003-12-17 | Koninkl Philips Electronics Nv | Insulated gate field effect transistor |
US7091556B2 (en) * | 2003-12-24 | 2006-08-15 | Texas Instruments Incorporated | High voltage drain-extended transistor |
US7268395B2 (en) * | 2004-06-04 | 2007-09-11 | International Rectifier Corporation | Deep trench super switch device |
DE102004064308B3 (de) | 2004-08-25 | 2018-10-31 | Infineon Technologies Austria Ag | Laterale Halbleiterdiode mit einer Feldelektrode und einer Eckstruktur |
DE102004041198B4 (de) * | 2004-08-25 | 2016-06-09 | Infineon Technologies Austria Ag | Laterales Halbleiterbauelement mit einer Feldelektrode und einer Entladestruktur |
US7465986B2 (en) * | 2004-08-27 | 2008-12-16 | International Rectifier Corporation | Power semiconductor device including insulated source electrodes inside trenches |
DE102004047772B4 (de) | 2004-09-30 | 2018-12-13 | Infineon Technologies Ag | Lateraler Halbleitertransistor |
US7473966B1 (en) * | 2004-11-09 | 2009-01-06 | Blanchard Richard A | Oxide-bypassed lateral high voltage structures and methods |
JP2008530776A (ja) * | 2005-02-07 | 2008-08-07 | エヌエックスピー ビー ヴィ | 横型半導体デバイスおよびその製造方法 |
WO2006085267A2 (en) * | 2005-02-08 | 2006-08-17 | Nxp B.V. | Semiconductor device with trench field plate |
US20060197153A1 (en) * | 2005-02-23 | 2006-09-07 | Chih-Feng Huang | Vertical transistor with field region structure |
DE102005008354B4 (de) | 2005-02-23 | 2007-12-27 | Infineon Technologies Austria Ag | Halbleiterbauteil sowie Verfahren zu dessen Herstellung |
JP2006303287A (ja) * | 2005-04-22 | 2006-11-02 | Toshiba Corp | 電力用半導体装置 |
GB0508407D0 (en) * | 2005-04-26 | 2005-06-01 | Ami Semiconductor Belgium Bvba | Alignment of trench for MOS |
US20060255401A1 (en) * | 2005-05-11 | 2006-11-16 | Yang Robert K | Increasing breakdown voltage in semiconductor devices with vertical series capacitive structures |
US7535057B2 (en) * | 2005-05-24 | 2009-05-19 | Robert Kuo-Chang Yang | DMOS transistor with a poly-filled deep trench for improved performance |
CN101203960B (zh) * | 2005-06-22 | 2012-09-26 | Nxp股份有限公司 | 具有高击穿电压的半导体器件及其制造方法 |
US20070012983A1 (en) * | 2005-07-15 | 2007-01-18 | Yang Robert K | Terminations for semiconductor devices with floating vertical series capacitive structures |
US8461648B2 (en) | 2005-07-27 | 2013-06-11 | Infineon Technologies Austria Ag | Semiconductor component with a drift region and a drift control region |
EP1908119B1 (de) | 2005-07-27 | 2012-04-18 | Infineon Technologies Austria AG | Halbleiterbauelement mit einer driftzone und einer driftsteuerzone |
US8110868B2 (en) | 2005-07-27 | 2012-02-07 | Infineon Technologies Austria Ag | Power semiconductor component with a low on-state resistance |
DE102006009942B4 (de) * | 2006-03-03 | 2012-02-09 | Infineon Technologies Austria Ag | Laterales Halbleiterbauelement mit niedrigem Einschaltwiderstand |
US7381603B2 (en) * | 2005-08-01 | 2008-06-03 | Semiconductor Components Industries, L.L.C. | Semiconductor structure with improved on resistance and breakdown voltage performance |
US7276766B2 (en) * | 2005-08-01 | 2007-10-02 | Semiconductor Components Industries, L.L.C. | Semiconductor structure with improved on resistance and breakdown voltage performance |
DE102005043916B3 (de) * | 2005-09-14 | 2006-12-21 | Infineon Technologies Austria Ag | Leistungshalbleiterbauelement mit einer Feldelektrode und Verfahren zu dessen Herstellung |
DE102005047056B3 (de) * | 2005-09-30 | 2007-01-18 | Infineon Technologies Ag | Leistungshalbleiterbauelement mit einer Feldelektrodenstruktur und Verfahren zur Herstellung einer Feldelektrodenstruktur |
JP5017865B2 (ja) * | 2006-01-17 | 2012-09-05 | 富士電機株式会社 | 半導体装置 |
WO2007110832A2 (en) * | 2006-03-28 | 2007-10-04 | Nxp B.V. | Trench-gate semiconductor device and method of fabrication thereof |
JP2007273920A (ja) * | 2006-03-31 | 2007-10-18 | Eudyna Devices Inc | 半導体装置およびその製造方法 |
JP5011881B2 (ja) * | 2006-08-11 | 2012-08-29 | 株式会社デンソー | 半導体装置の製造方法 |
JP4304198B2 (ja) * | 2006-09-15 | 2009-07-29 | 株式会社東芝 | 半導体装置 |
US7381618B2 (en) * | 2006-10-03 | 2008-06-03 | Power Integrations, Inc. | Gate etch process for a high-voltage FET |
US8093621B2 (en) | 2008-12-23 | 2012-01-10 | Power Integrations, Inc. | VTS insulated gate bipolar transistor |
DE102006055742B4 (de) * | 2006-11-25 | 2011-07-14 | Infineon Technologies Austria Ag | Halbleiterbauelementanordnung mit mehreren zu einer Driftzone benachbart angeordneten Steuerelektroden |
US8564057B1 (en) * | 2007-01-09 | 2013-10-22 | Maxpower Semiconductor, Inc. | Power devices, structures, components, and methods using lateral drift, fixed net charge, and shield |
US8659074B2 (en) * | 2007-01-09 | 2014-02-25 | Maxpower Semiconductor, Inc. | Semiconductor device |
DE102007002965A1 (de) | 2007-01-19 | 2008-07-24 | Infineon Technologies Ag | Verfahren zur Herstellung einer kapazitiven Struktur oder Varistorstruktur in einem Graben eines Halbleiterkörper |
DE102007004331B4 (de) | 2007-01-29 | 2014-08-21 | Infineon Technologies Austria Ag | Halbleiterbauelement mit reduziertem mechanischen Stress |
DE102007004323A1 (de) * | 2007-01-29 | 2008-07-31 | Infineon Technologies Austria Ag | Bauelementanordnung mit einem eine Feldelektrode aufweisenden MOS-Transistor |
US7557406B2 (en) * | 2007-02-16 | 2009-07-07 | Power Integrations, Inc. | Segmented pillar layout for a high-voltage vertical transistor |
US7595523B2 (en) * | 2007-02-16 | 2009-09-29 | Power Integrations, Inc. | Gate pullback at ends of high-voltage vertical transistor structure |
US7468536B2 (en) * | 2007-02-16 | 2008-12-23 | Power Integrations, Inc. | Gate metal routing for transistor with checkerboarded layout |
US8653583B2 (en) * | 2007-02-16 | 2014-02-18 | Power Integrations, Inc. | Sensing FET integrated with a high-voltage transistor |
US7859037B2 (en) * | 2007-02-16 | 2010-12-28 | Power Integrations, Inc. | Checkerboarded high-voltage vertical transistor layout |
US20080203470A1 (en) * | 2007-02-28 | 2008-08-28 | Infineon Technologies Austria Ag | Lateral compensation component |
DE102007033839B4 (de) * | 2007-07-18 | 2015-04-09 | Infineon Technologies Austria Ag | Halbleiterbauelement und Verfahren zur Herstellung desselben |
TWI357108B (en) * | 2007-08-21 | 2012-01-21 | Nat Univ Tsing Hua | Semiconductor device structure |
DE102007046556A1 (de) * | 2007-09-28 | 2009-04-02 | Infineon Technologies Austria Ag | Halbleiterbauelement mit Kupfermetallisierungen |
US7842552B2 (en) * | 2007-10-12 | 2010-11-30 | International Business Machines Corporation | Semiconductor chip packages having reduced stress |
US7875962B2 (en) * | 2007-10-15 | 2011-01-25 | Power Integrations, Inc. | Package for a power semiconductor device |
US8129815B2 (en) | 2009-08-20 | 2012-03-06 | Power Integrations, Inc | High-voltage transistor device with integrated resistor |
US7772668B2 (en) | 2007-12-26 | 2010-08-10 | Fairchild Semiconductor Corporation | Shielded gate trench FET with multiple channels |
US7888732B2 (en) * | 2008-04-11 | 2011-02-15 | Texas Instruments Incorporated | Lateral drain-extended MOSFET having channel along sidewall of drain extension dielectric |
US8035112B1 (en) * | 2008-04-23 | 2011-10-11 | Purdue Research Foundation | SIC power DMOSFET with self-aligned source contact |
US7964912B2 (en) | 2008-09-18 | 2011-06-21 | Power Integrations, Inc. | High-voltage vertical transistor with a varied width silicon pillar |
US7871882B2 (en) | 2008-12-20 | 2011-01-18 | Power Integrations, Inc. | Method of fabricating a deep trench insulated gate bipolar transistor |
US20100155831A1 (en) * | 2008-12-20 | 2010-06-24 | Power Integrations, Inc. | Deep trench insulated gate bipolar transistor |
US8004051B2 (en) * | 2009-02-06 | 2011-08-23 | Texas Instruments Incorporated | Lateral trench MOSFET having a field plate |
US8207455B2 (en) * | 2009-07-31 | 2012-06-26 | Power Integrations, Inc. | Power semiconductor package with bottom surface protrusions |
US8115457B2 (en) | 2009-07-31 | 2012-02-14 | Power Integrations, Inc. | Method and apparatus for implementing a power converter input terminal voltage discharge circuit |
US9818857B2 (en) | 2009-08-04 | 2017-11-14 | Gan Systems Inc. | Fault tolerant design for large area nitride semiconductor devices |
EP2465141B1 (en) | 2009-08-04 | 2021-04-07 | GaN Systems Inc. | Gallium nitride microwave and power switching transistors with matrix layout |
US9029866B2 (en) * | 2009-08-04 | 2015-05-12 | Gan Systems Inc. | Gallium nitride power devices using island topography |
US8207577B2 (en) * | 2009-09-29 | 2012-06-26 | Power Integrations, Inc. | High-voltage transistor structure with reduced gate capacitance |
US7893754B1 (en) | 2009-10-02 | 2011-02-22 | Power Integrations, Inc. | Temperature independent reference circuit |
US8634218B2 (en) * | 2009-10-06 | 2014-01-21 | Power Integrations, Inc. | Monolithic AC/DC converter for generating DC supply voltage |
US8310845B2 (en) * | 2010-02-10 | 2012-11-13 | Power Integrations, Inc. | Power supply circuit with a control terminal for different functional modes of operation |
US8791508B2 (en) | 2010-04-13 | 2014-07-29 | Gan Systems Inc. | High density gallium nitride devices using island topology |
US7932738B1 (en) | 2010-05-07 | 2011-04-26 | Power Integrations, Inc. | Method and apparatus for reading a programmable anti-fuse element in a high-voltage integrated circuit |
US8164125B2 (en) * | 2010-05-07 | 2012-04-24 | Power Integrations, Inc. | Integrated transistor and anti-fuse as programming element for a high-voltage integrated circuit |
US8305826B2 (en) | 2010-05-07 | 2012-11-06 | Power Integrations, Inc. | Method and apparatus for programming an anti-fuse element in a high-voltage integrated circuit |
US7977742B1 (en) * | 2010-08-20 | 2011-07-12 | Monolithic Power Systems, Inc. | Trench-gate MOSFET with capacitively depleted drift region |
US7977193B1 (en) * | 2010-08-20 | 2011-07-12 | Monolithic Power Systems, Inc. | Trench-gate MOSFET with capacitively depleted drift region |
US8299547B2 (en) * | 2011-01-03 | 2012-10-30 | International Business Machines Corporation | Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered dielectric plates |
US8901676B2 (en) | 2011-01-03 | 2014-12-02 | International Business Machines Corporation | Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) having a high drain-to-body breakdown voltage (Vb), a method of forming an LEDMOSFET, and a silicon-controlled rectifier (SCR) incorporating a complementary pair of LEDMOSFETs |
JP5716467B2 (ja) * | 2011-03-11 | 2015-05-13 | 富士通株式会社 | 電界効果トランジスタとその製造方法 |
US8723178B2 (en) | 2012-01-20 | 2014-05-13 | Monolithic Power Systems, Inc. | Integrated field effect transistors with high voltage drain sensing |
US8653600B2 (en) | 2012-06-01 | 2014-02-18 | Power Integrations, Inc. | High-voltage monolithic schottky device structure |
JP6107430B2 (ja) * | 2012-06-08 | 2017-04-05 | 豊田合成株式会社 | 半導体装置 |
US8765609B2 (en) * | 2012-07-25 | 2014-07-01 | Power Integrations, Inc. | Deposit/etch for tapered oxide |
US8642427B1 (en) * | 2012-08-02 | 2014-02-04 | Vanguard International Semiconductor Corporation | Semiconductor device and method for fabricating the same |
US9076763B2 (en) * | 2012-08-13 | 2015-07-07 | Infineon Technologies Austria Ag | High breakdown voltage III-nitride device |
TWI463666B (zh) * | 2012-10-05 | 2014-12-01 | Vanguard Int Semiconduct Corp | 半導體裝置及其製造方法 |
US9245960B2 (en) * | 2013-02-08 | 2016-01-26 | Globalfoundries Inc. | Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered airgap field plates |
US9455621B2 (en) | 2013-08-28 | 2016-09-27 | Power Integrations, Inc. | Controller IC with zero-crossing detector and capacitor discharge switching element |
US9111766B2 (en) | 2013-09-24 | 2015-08-18 | Infineon Technologies Austria Ag | Transistor device with a field electrode |
US9543396B2 (en) | 2013-12-13 | 2017-01-10 | Power Integrations, Inc. | Vertical transistor device structure with cylindrically-shaped regions |
US10325988B2 (en) | 2013-12-13 | 2019-06-18 | Power Integrations, Inc. | Vertical transistor device structure with cylindrically-shaped field plates |
US9312382B2 (en) * | 2014-07-22 | 2016-04-12 | Empire Technology Development Llc | High voltage transistor device with reduced characteristic on resistance |
US9564515B2 (en) * | 2014-07-28 | 2017-02-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device having super junction structure and method for manufacturing the same |
JP6299581B2 (ja) | 2014-12-17 | 2018-03-28 | 三菱電機株式会社 | 半導体装置 |
JP2016171268A (ja) | 2015-03-16 | 2016-09-23 | 株式会社東芝 | 半導体装置 |
DE102015112414A1 (de) * | 2015-07-29 | 2017-02-02 | Infineon Technologies Ag | Verfahren zum herstellen einer halbleiterstruktur und halbleitervorrichtung |
US9667154B2 (en) | 2015-09-18 | 2017-05-30 | Power Integrations, Inc. | Demand-controlled, low standby power linear shunt regulator |
US9602009B1 (en) | 2015-12-08 | 2017-03-21 | Power Integrations, Inc. | Low voltage, closed loop controlled energy storage circuit |
WO2017111852A1 (en) * | 2015-12-24 | 2017-06-29 | Intel Corporation | Vertical iii-n transistors with lateral epitaxial overgrowth |
US9629218B1 (en) | 2015-12-28 | 2017-04-18 | Power Integrations, Inc. | Thermal protection for LED bleeder in fault condition |
JP6849695B2 (ja) | 2016-04-08 | 2021-03-24 | パワー・インテグレーションズ・インコーポレーテッド | 半導体デバイスのための集積抵抗器 |
US10135357B1 (en) | 2017-09-07 | 2018-11-20 | Power Integrations, Inc. | Threshold detection with tap |
EP4250359A1 (en) * | 2022-03-24 | 2023-09-27 | Infineon Technologies Austria AG | Semiconductor device and method of fabricating a semiconductor device |
Family Cites Families (102)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US493951A (en) * | 1893-03-21 | Continuous brick-kiln | ||
US3127703A (en) * | 1962-05-24 | 1964-04-07 | Ronald E Eshelman | Adjustable guide strips or ground members |
JPS5638867A (en) | 1979-09-07 | 1981-04-14 | Hitachi Ltd | Insulated gate type field effect transistor |
US4343015A (en) * | 1980-05-14 | 1982-08-03 | General Electric Company | Vertical channel field effect transistor |
JPS5710975A (en) | 1980-06-25 | 1982-01-20 | Sanyo Electric Co Ltd | High dielectric strength high transistor |
JPS5712557A (en) | 1980-06-25 | 1982-01-22 | Sanyo Electric Co Ltd | High dielectric resisting mos transistor |
JPS5712558A (en) | 1980-06-25 | 1982-01-22 | Sanyo Electric Co Ltd | Mos transistor having high withstand voltage |
GB2089119A (en) | 1980-12-10 | 1982-06-16 | Philips Electronic Associated | High voltage semiconductor devices |
US4626879A (en) | 1982-12-21 | 1986-12-02 | North American Philips Corporation | Lateral double-diffused MOS transistor devices suitable for source-follower applications |
US4738936A (en) * | 1983-07-01 | 1988-04-19 | Acrian, Inc. | Method of fabrication lateral FET structure having a substrate to source contact |
US4626789A (en) | 1983-08-19 | 1986-12-02 | Hitachi, Ltd. | Demodulating circuit for data signal |
JPS6064471A (ja) | 1983-09-19 | 1985-04-13 | Nec Corp | 高電圧絶縁ゲ−ト型電界効果トランジスタ |
US4531173A (en) | 1983-11-02 | 1985-07-23 | Motorola, Inc. | Protective power foldback circuit for a power semiconductor |
US4618541A (en) * | 1984-12-21 | 1986-10-21 | Advanced Micro Devices, Inc. | Method of forming a silicon nitride film transparent to ultraviolet radiation and resulting article |
US4665426A (en) * | 1985-02-01 | 1987-05-12 | Advanced Micro Devices, Inc. | EPROM with ultraviolet radiation transparent silicon nitride passivation layer |
US4963951A (en) * | 1985-11-29 | 1990-10-16 | General Electric Company | Lateral insulated gate bipolar transistors with improved latch-up immunity |
US4764800A (en) | 1986-05-07 | 1988-08-16 | Advanced Micro Devices, Inc. | Seal structure for an integrated circuit |
US4796070A (en) * | 1987-01-15 | 1989-01-03 | General Electric Company | Lateral charge control semiconductor device and method of fabrication |
US5010024A (en) | 1987-03-04 | 1991-04-23 | Advanced Micro Devices, Inc. | Passivation for integrated circuit structures |
US4811075A (en) | 1987-04-24 | 1989-03-07 | Power Integrations, Inc. | High voltage MOS transistors |
US4890144A (en) * | 1987-09-14 | 1989-12-26 | Motorola, Inc. | Integrated circuit trench cell |
JPH01112764A (ja) * | 1987-10-27 | 1989-05-01 | Nec Corp | 半導体装置 |
US4939566A (en) * | 1987-10-30 | 1990-07-03 | North American Philips Corporation | Semiconductor switch with parallel DMOS and IGT |
US4926074A (en) * | 1987-10-30 | 1990-05-15 | North American Philips Corporation | Semiconductor switch with parallel lateral double diffused MOS transistor and lateral insulated gate transistor |
US4890146A (en) | 1987-12-16 | 1989-12-26 | Siliconix Incorporated | High voltage level shift semiconductor device |
US4922327A (en) | 1987-12-24 | 1990-05-01 | University Of Toronto Innovations Foundation | Semiconductor LDMOS device with upper and lower passages |
US4929987A (en) * | 1988-02-01 | 1990-05-29 | General Instrument Corporation | Method for setting the threshold voltage of a power mosfet |
US5025296A (en) * | 1988-02-29 | 1991-06-18 | Motorola, Inc. | Center tapped FET |
US5283201A (en) * | 1988-05-17 | 1994-02-01 | Advanced Power Technology, Inc. | High density power device fabrication process |
US5237193A (en) | 1988-06-24 | 1993-08-17 | Siliconix Incorporated | Lightly doped drain MOSFET with reduced on-resistance |
EP0371785B1 (en) * | 1988-11-29 | 1996-05-01 | Kabushiki Kaisha Toshiba | Lateral conductivity modulated MOSFET |
JP2877408B2 (ja) | 1990-01-12 | 1999-03-31 | 株式会社東芝 | 導電変調型mosfet |
JP2597412B2 (ja) | 1990-03-20 | 1997-04-09 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US5040045A (en) * | 1990-05-17 | 1991-08-13 | U.S. Philips Corporation | High voltage MOS transistor having shielded crossover path for a high voltage connection bus |
JP2991753B2 (ja) | 1990-08-27 | 1999-12-20 | 松下電子工業株式会社 | 半導体装置及びその製造方法 |
US5386136A (en) | 1991-05-06 | 1995-01-31 | Siliconix Incorporated | Lightly-doped drain MOSFET with improved breakdown characteristics |
US5146298A (en) | 1991-08-16 | 1992-09-08 | Eklund Klas H | Device which functions as a lateral double-diffused insulated gate field effect transistor or as a bipolar transistor |
US5258636A (en) * | 1991-12-12 | 1993-11-02 | Power Integrations, Inc. | Narrow radius tips for high voltage semiconductor devices with interdigitated source and drain electrodes |
US5270264A (en) | 1991-12-20 | 1993-12-14 | Intel Corporation | Process for filling submicron spaces with dielectric |
JP3435173B2 (ja) | 1992-07-10 | 2003-08-11 | 株式会社日立製作所 | 半導体装置 |
US5294824A (en) * | 1992-07-31 | 1994-03-15 | Motorola, Inc. | High voltage transistor having reduced on-resistance |
JP3076468B2 (ja) | 1993-01-26 | 2000-08-14 | 松下電子工業株式会社 | 半導体装置 |
US5313082A (en) | 1993-02-16 | 1994-05-17 | Power Integrations, Inc. | High voltage MOS transistor with a low on-resistance |
DE4309764C2 (de) | 1993-03-25 | 1997-01-30 | Siemens Ag | Leistungs-MOSFET |
US5349225A (en) * | 1993-04-12 | 1994-09-20 | Texas Instruments Incorporated | Field effect transistor with a lightly doped drain |
JP3198200B2 (ja) * | 1993-04-30 | 2001-08-13 | 株式会社東芝 | 縦型mosトランジスタの製造方法 |
US5324683A (en) | 1993-06-02 | 1994-06-28 | Motorola, Inc. | Method of forming a semiconductor structure having an air region |
BE1007283A3 (nl) * | 1993-07-12 | 1995-05-09 | Philips Electronics Nv | Halfgeleiderinrichting met een most voorzien van een extended draingebied voor hoge spanningen. |
EP0646965B1 (en) * | 1993-09-17 | 1999-01-07 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | An integrated device with a bipolar transistor and a MOSFET transistor in an emitter switching configuration |
US5523604A (en) | 1994-05-13 | 1996-06-04 | International Rectifier Corporation | Amorphous silicon layer for top surface of semiconductor device |
US5494853A (en) | 1994-07-25 | 1996-02-27 | United Microelectronics Corporation | Method to solve holes in passivation by metal layout |
US5521105A (en) | 1994-08-12 | 1996-05-28 | United Microelectronics Corporation | Method of forming counter-doped island in power MOSFET |
US6075259A (en) | 1994-11-14 | 2000-06-13 | North Carolina State University | Power semiconductor devices that utilize buried insulating regions to achieve higher than parallel-plane breakdown voltages |
US5550405A (en) | 1994-12-21 | 1996-08-27 | Advanced Micro Devices, Incorporated | Processing techniques for achieving production-worthy, low dielectric, low interconnect resistance and high performance ICS |
US5656543A (en) | 1995-02-03 | 1997-08-12 | National Semiconductor Corporation | Fabrication of integrated circuits with borderless vias |
EP0726603B1 (en) * | 1995-02-10 | 1999-04-21 | SILICONIX Incorporated | Trenched field effect transistor with PN depletion barrier |
JP3291958B2 (ja) * | 1995-02-21 | 2002-06-17 | 富士電機株式会社 | バックソースmosfet |
US5670828A (en) | 1995-02-21 | 1997-09-23 | Advanced Micro Devices, Inc. | Tunneling technology for reducing intra-conductive layer capacitance |
US6049108A (en) * | 1995-06-02 | 2000-04-11 | Siliconix Incorporated | Trench-gated MOSFET with bidirectional voltage clamping |
US5659201A (en) | 1995-06-05 | 1997-08-19 | Advanced Micro Devices, Inc. | High conductivity interconnection line |
KR100188096B1 (ko) * | 1995-09-14 | 1999-06-01 | 김광호 | 반도체 장치 및 그 제조 방법 |
US5637898A (en) | 1995-12-22 | 1997-06-10 | North Carolina State University | Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance |
JPH09266311A (ja) * | 1996-01-22 | 1997-10-07 | Fuji Electric Co Ltd | 半導体装置及びその製造方法 |
GB2309336B (en) | 1996-01-22 | 2001-05-23 | Fuji Electric Co Ltd | Semiconductor device |
US6184555B1 (en) | 1996-02-05 | 2001-02-06 | Siemens Aktiengesellschaft | Field effect-controlled semiconductor component |
DE19611045C1 (de) * | 1996-03-20 | 1997-05-22 | Siemens Ag | Durch Feldeffekt steuerbares Halbleiterbauelement |
AU3724197A (en) * | 1996-07-19 | 1998-02-10 | Siliconix Incorporated | High density trench dmos transistor with trench bottom implant |
US5841166A (en) * | 1996-09-10 | 1998-11-24 | Spectrian, Inc. | Lateral DMOS transistor for RF/microwave applications |
US6207994B1 (en) * | 1996-11-05 | 2001-03-27 | Power Integrations, Inc. | High-voltage transistor with multi-layer conduction region |
KR100228331B1 (ko) * | 1996-12-30 | 1999-11-01 | 김영환 | 반도체 소자의 삼중웰 제조 방법 |
JP3393544B2 (ja) * | 1997-02-26 | 2003-04-07 | シャープ株式会社 | 半導体装置の製造方法 |
US6133607A (en) * | 1997-05-22 | 2000-10-17 | Kabushiki Kaisha Toshiba | Semiconductor device |
US5869875A (en) * | 1997-06-10 | 1999-02-09 | Spectrian | Lateral diffused MOS transistor with trench source contact |
US6194283B1 (en) * | 1997-10-29 | 2001-02-27 | Advanced Micro Devices, Inc. | High density trench fill due to new spacer fill method including isotropically etching silicon nitride spacers |
JP3129264B2 (ja) * | 1997-12-04 | 2001-01-29 | 日本電気株式会社 | 化合物半導体電界効果トランジスタ |
JP2001513270A (ja) | 1997-12-24 | 2001-08-28 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 改良されたオン状態特性を有する高電圧薄膜トランジスタ及びその製造方法 |
JP3211771B2 (ja) | 1998-05-26 | 2001-09-25 | 日本電気株式会社 | 音声送受信装置 |
DE19840032C1 (de) * | 1998-09-02 | 1999-11-18 | Siemens Ag | Halbleiterbauelement und Herstellungsverfahren dazu |
US6077748A (en) * | 1998-10-19 | 2000-06-20 | Advanced Micro Devices, Inc. | Advanced trench isolation fabrication scheme for precision polysilicon gate control |
US5998833A (en) * | 1998-10-26 | 1999-12-07 | North Carolina State University | Power semiconductor devices having improved high frequency switching and breakdown characteristics |
KR100275500B1 (ko) * | 1998-10-28 | 2000-12-15 | 정선종 | 집적화된 고전압 전력 소자 제조방법 |
DE19854915C2 (de) | 1998-11-27 | 2002-09-05 | Infineon Technologies Ag | MOS-Feldeffekttransistor mit Hilfselektrode |
JP2000228521A (ja) * | 1999-02-05 | 2000-08-15 | Fuji Electric Co Ltd | 半導体装置 |
US6191447B1 (en) * | 1999-05-28 | 2001-02-20 | Micro-Ohm Corporation | Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same |
JP2000349288A (ja) | 1999-06-09 | 2000-12-15 | Fuji Electric Co Ltd | 縦型mosfet |
JP3971062B2 (ja) | 1999-07-29 | 2007-09-05 | 株式会社東芝 | 高耐圧半導体装置 |
US6365932B1 (en) | 1999-08-20 | 2002-04-02 | Denso Corporation | Power MOS transistor |
US6127703A (en) * | 1999-08-31 | 2000-10-03 | Philips Electronics North America Corporation | Lateral thin-film silicon-on-insulator (SOI) PMOS device having a drain extension region |
JP3704007B2 (ja) * | 1999-09-14 | 2005-10-05 | 株式会社東芝 | 半導体装置及びその製造方法 |
US6489653B2 (en) | 1999-12-27 | 2002-12-03 | Kabushiki Kaisha Toshiba | Lateral high-breakdown-voltage transistor |
US6376878B1 (en) * | 2000-02-11 | 2002-04-23 | Fairchild Semiconductor Corporation | MOS-gated devices with alternating zones of conductivity |
GB0003185D0 (en) * | 2000-02-12 | 2000-04-05 | Koninkl Philips Electronics Nv | An insulated gate field effect device |
GB0012138D0 (en) * | 2000-05-20 | 2000-07-12 | Koninkl Philips Electronics Nv | A semiconductor device |
US6781194B2 (en) * | 2001-04-11 | 2004-08-24 | Silicon Semiconductor Corporation | Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein |
JP4285899B2 (ja) * | 2000-10-10 | 2009-06-24 | 三菱電機株式会社 | 溝を有する半導体装置 |
US6653691B2 (en) | 2000-11-16 | 2003-11-25 | Silicon Semiconductor Corporation | Radio frequency (RF) power devices having faraday shield layers therein |
US6468847B1 (en) * | 2000-11-27 | 2002-10-22 | Power Integrations, Inc. | Method of fabricating a high-voltage transistor |
US6509220B2 (en) | 2000-11-27 | 2003-01-21 | Power Integrations, Inc. | Method of fabricating a high-voltage transistor |
US6853033B2 (en) | 2001-06-05 | 2005-02-08 | National University Of Singapore | Power MOSFET having enhanced breakdown voltage |
US6635544B2 (en) | 2001-09-07 | 2003-10-21 | Power Intergrations, Inc. | Method of fabricating a high-voltage transistor with a multi-layered extended drain structure |
US6555873B2 (en) | 2001-09-07 | 2003-04-29 | Power Integrations, Inc. | High-voltage lateral transistor with a multi-layered extended drain structure |
US6573558B2 (en) | 2001-09-07 | 2003-06-03 | Power Integrations, Inc. | High-voltage vertical transistor with a multi-layered extended drain structure |
-
2001
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- 2002-04-30 US US10/135,114 patent/US6815293B2/en not_active Expired - Fee Related
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- 2002-08-16 EP EP02255728A patent/EP1300886A3/en not_active Withdrawn
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US20030047792A1 (en) | 2003-03-13 |
US6987299B2 (en) | 2006-01-17 |
US20030047788A1 (en) | 2003-03-13 |
US6798020B2 (en) | 2004-09-28 |
JP2011151408A (ja) | 2011-08-04 |
US6815293B2 (en) | 2004-11-09 |
JP4744057B2 (ja) | 2011-08-10 |
US20030151110A1 (en) | 2003-08-14 |
EP1300886A2 (en) | 2003-04-09 |
US6555873B2 (en) | 2003-04-29 |
JP2004297085A (ja) | 2004-10-21 |
EP1300886A3 (en) | 2004-02-18 |
JP2003152179A (ja) | 2003-05-23 |
US20040232486A1 (en) | 2004-11-25 |
EP1521307A3 (en) | 2008-08-06 |
EP1521307A2 (en) | 2005-04-06 |
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