CN102254796B - 形成交替排列的p型和n型半导体薄层的方法 - Google Patents
形成交替排列的p型和n型半导体薄层的方法 Download PDFInfo
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- CN102254796B CN102254796B CN201010180113.6A CN201010180113A CN102254796B CN 102254796 B CN102254796 B CN 102254796B CN 201010180113 A CN201010180113 A CN 201010180113A CN 102254796 B CN102254796 B CN 102254796B
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H01L21/02612—Formation types
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
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- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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Abstract
Description
Claims (11)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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CN201010180113.6A CN102254796B (zh) | 2010-05-20 | 2010-05-20 | 形成交替排列的p型和n型半导体薄层的方法 |
US13/106,778 US20110287613A1 (en) | 2010-05-20 | 2011-05-12 | Manufacturing method of superjunction structure |
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CN201010180113.6A CN102254796B (zh) | 2010-05-20 | 2010-05-20 | 形成交替排列的p型和n型半导体薄层的方法 |
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CN102254796A CN102254796A (zh) | 2011-11-23 |
CN102254796B true CN102254796B (zh) | 2014-05-21 |
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CN201010180113.6A Active CN102254796B (zh) | 2010-05-20 | 2010-05-20 | 形成交替排列的p型和n型半导体薄层的方法 |
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US (1) | US20110287613A1 (zh) |
CN (1) | CN102254796B (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103094067B (zh) * | 2011-10-31 | 2015-10-14 | 上海华虹宏力半导体制造有限公司 | 一种半导体器件的制造方法 |
CN103426924A (zh) * | 2012-05-14 | 2013-12-04 | 无锡华润上华半导体有限公司 | 沟槽型功率mosfet及其制备方法 |
CN103837807B (zh) * | 2012-11-23 | 2016-11-09 | 上海华虹宏力半导体制造有限公司 | 测量深沟槽内载流子浓度分布的方法 |
CN104124140B (zh) * | 2013-04-24 | 2016-11-02 | 上海华虹宏力半导体制造有限公司 | 形成交替排列的p型和n型半导体薄层的方法 |
CN104681438B (zh) * | 2013-11-27 | 2017-10-20 | 上海华虹宏力半导体制造有限公司 | 一种半导体器件的形成方法 |
CN104409334B (zh) * | 2014-11-06 | 2017-06-16 | 中航(重庆)微电子有限公司 | 一种超结器件的制备方法 |
DE102015210923B4 (de) * | 2015-06-15 | 2018-08-02 | Infineon Technologies Ag | Halbleitervorrichtung mit reduzierter Emitter-Effizienz und Verfahren zur Herstellung |
CN105529355B (zh) * | 2016-01-29 | 2019-02-05 | 上海华虹宏力半导体制造有限公司 | 沟槽型超级结外延填充方法 |
JP6485382B2 (ja) * | 2016-02-23 | 2019-03-20 | 株式会社デンソー | 化合物半導体装置の製造方法および化合物半導体装置 |
CN106757324B (zh) * | 2016-12-26 | 2019-05-21 | 南京国盛电子有限公司 | 一种硅外延片的制造方法 |
Citations (2)
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CN101308875A (zh) * | 2007-05-14 | 2008-11-19 | 株式会社电装 | 具有超结结构的半导体器件及其制造方法 |
CN102208336A (zh) * | 2010-03-31 | 2011-10-05 | 上海华虹Nec电子有限公司 | 形成交替排列的p型和n型半导体薄层的工艺方法 |
Family Cites Families (10)
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US6635544B2 (en) * | 2001-09-07 | 2003-10-21 | Power Intergrations, Inc. | Method of fabricating a high-voltage transistor with a multi-layered extended drain structure |
JP3634830B2 (ja) * | 2002-09-25 | 2005-03-30 | 株式会社東芝 | 電力用半導体素子 |
JP4695824B2 (ja) * | 2003-03-07 | 2011-06-08 | 富士電機ホールディングス株式会社 | 半導体ウエハの製造方法 |
JP4773716B2 (ja) * | 2004-03-31 | 2011-09-14 | 株式会社デンソー | 半導体基板の製造方法 |
US7423315B2 (en) * | 2004-11-05 | 2008-09-09 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
JP4534041B2 (ja) * | 2005-08-02 | 2010-09-01 | 株式会社デンソー | 半導体装置の製造方法 |
DE102006062821B4 (de) * | 2005-09-29 | 2014-07-03 | Denso Corporation | Verfahren zur Fertigung einer Halbleitervorrichtung |
JP5150048B2 (ja) * | 2005-09-29 | 2013-02-20 | 株式会社デンソー | 半導体基板の製造方法 |
US7799640B2 (en) * | 2006-09-28 | 2010-09-21 | Semiconductor Components Industries, Llc | Method of forming a semiconductor device having trench charge compensation regions |
JP5217257B2 (ja) * | 2007-06-06 | 2013-06-19 | 株式会社デンソー | 半導体装置およびその製造方法 |
-
2010
- 2010-05-20 CN CN201010180113.6A patent/CN102254796B/zh active Active
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2011
- 2011-05-12 US US13/106,778 patent/US20110287613A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101308875A (zh) * | 2007-05-14 | 2008-11-19 | 株式会社电装 | 具有超结结构的半导体器件及其制造方法 |
CN102208336A (zh) * | 2010-03-31 | 2011-10-05 | 上海华虹Nec电子有限公司 | 形成交替排列的p型和n型半导体薄层的工艺方法 |
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