CN102208336B - 形成交替排列的p型和n型半导体薄层的工艺方法 - Google Patents
形成交替排列的p型和n型半导体薄层的工艺方法 Download PDFInfo
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- CN102208336B CN102208336B CN2010101375001A CN201010137500A CN102208336B CN 102208336 B CN102208336 B CN 102208336B CN 2010101375001 A CN2010101375001 A CN 2010101375001A CN 201010137500 A CN201010137500 A CN 201010137500A CN 102208336 B CN102208336 B CN 102208336B
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 115
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 115
- 239000010703 silicon Substances 0.000 claims abstract description 115
- 239000013078 crystal Substances 0.000 claims abstract description 97
- 239000007789 gas Substances 0.000 claims abstract description 60
- 230000012010 growth Effects 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000001257 hydrogen Substances 0.000 claims abstract description 19
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 19
- 150000004820 halides Chemical class 0.000 claims abstract description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 230000008569 process Effects 0.000 claims description 26
- 239000012535 impurity Substances 0.000 claims description 16
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 12
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 12
- 150000002431 hydrogen Chemical class 0.000 claims description 10
- 239000003595 mist Substances 0.000 claims description 9
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims description 2
- 229910000085 borane Inorganic materials 0.000 claims description 2
- 239000000460 chlorine Substances 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 2
- 239000005052 trichlorosilane Substances 0.000 claims description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 8
- 238000000407 epitaxy Methods 0.000 description 18
- 238000005530 etching Methods 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 6
- 230000002950 deficient Effects 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 238000005429 filling process Methods 0.000 description 5
- 239000007943 implant Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 229910000039 hydrogen halide Inorganic materials 0.000 description 3
- 239000012433 hydrogen halide Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
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- 238000006757 chemical reactions by type Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 241000446313 Lamella Species 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
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- 230000036632 reaction speed Effects 0.000 description 1
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- 238000006557 surface reaction Methods 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02516—Crystal orientation
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- Chemical & Material Sciences (AREA)
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Abstract
Description
Claims (9)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010101375001A CN102208336B (zh) | 2010-03-31 | 2010-03-31 | 形成交替排列的p型和n型半导体薄层的工艺方法 |
US13/075,017 US8440529B2 (en) | 2010-03-31 | 2011-03-29 | Method of manufacturing superjunction structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN2010101375001A CN102208336B (zh) | 2010-03-31 | 2010-03-31 | 形成交替排列的p型和n型半导体薄层的工艺方法 |
Publications (2)
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CN102208336A CN102208336A (zh) | 2011-10-05 |
CN102208336B true CN102208336B (zh) | 2013-03-13 |
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US (1) | US8440529B2 (zh) |
CN (1) | CN102208336B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102254796B (zh) * | 2010-05-20 | 2014-05-21 | 上海华虹宏力半导体制造有限公司 | 形成交替排列的p型和n型半导体薄层的方法 |
CN103094067B (zh) * | 2011-10-31 | 2015-10-14 | 上海华虹宏力半导体制造有限公司 | 一种半导体器件的制造方法 |
ITTO20130410A1 (it) * | 2013-05-22 | 2014-11-23 | St Microelectronics Srl | Dispositivo di potenza a supergiunzione e relativo procedimento di fabbricazione |
CN104701155A (zh) * | 2013-12-09 | 2015-06-10 | 中芯国际集成电路制造(上海)有限公司 | 栅氧化层的制造方法 |
CN103824879B (zh) * | 2014-01-30 | 2018-01-09 | 株洲南车时代电气股份有限公司 | 一种功率器件结终端结构与制造方法 |
DE102015116576B4 (de) * | 2015-09-30 | 2021-11-25 | Infineon Technologies Austria Ag | Superjunction-Halbleitervorrichtung mit entgegengesetzt dotierten Halbleiterbereichen, die in Gräben ausgebildet sind, und Verfahren zur Herstellung |
DE102016101559A1 (de) * | 2016-01-28 | 2017-08-03 | Infineon Technologies Austria Ag | Verfahren zum herstellen von halbleitervorrichtungen, einschliesslich einer abscheidung von kristallinem silizium in gräben |
CN107275389B (zh) * | 2017-06-30 | 2020-02-07 | 上海华虹宏力半导体制造有限公司 | 超级结的沟槽填充方法 |
US20200135898A1 (en) * | 2018-10-30 | 2020-04-30 | International Business Machines Corporation | Hard mask replenishment for etching processes |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101308875A (zh) * | 2007-05-14 | 2008-11-19 | 株式会社电装 | 具有超结结构的半导体器件及其制造方法 |
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JP3485081B2 (ja) | 1999-10-28 | 2004-01-13 | 株式会社デンソー | 半導体基板の製造方法 |
JP3634848B2 (ja) | 2003-01-07 | 2005-03-30 | 株式会社東芝 | 電力用半導体素子 |
KR100994719B1 (ko) * | 2003-11-28 | 2010-11-16 | 페어차일드코리아반도체 주식회사 | 슈퍼정션 반도체장치 |
JP2005197287A (ja) | 2003-12-26 | 2005-07-21 | Rohm Co Ltd | 半導体装置およびその製造方法 |
US7423315B2 (en) * | 2004-11-05 | 2008-09-09 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
US7279368B2 (en) * | 2005-03-04 | 2007-10-09 | Cree, Inc. | Method of manufacturing a vertical junction field effect transistor having an epitaxial gate |
US7355223B2 (en) * | 2005-03-04 | 2008-04-08 | Cree, Inc. | Vertical junction field effect transistor having an epitaxial gate |
EP1724822A3 (en) | 2005-05-17 | 2007-01-24 | Sumco Corporation | Semiconductor substrate and manufacturing method thereof |
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- 2010-03-31 CN CN2010101375001A patent/CN102208336B/zh active Active
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CN101308875A (zh) * | 2007-05-14 | 2008-11-19 | 株式会社电装 | 具有超结结构的半导体器件及其制造方法 |
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CN102208336A (zh) | 2011-10-05 |
US20110244664A1 (en) | 2011-10-06 |
US8440529B2 (en) | 2013-05-14 |
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