JP2003163221A5 - - Google Patents

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Publication number
JP2003163221A5
JP2003163221A5 JP2001363486A JP2001363486A JP2003163221A5 JP 2003163221 A5 JP2003163221 A5 JP 2003163221A5 JP 2001363486 A JP2001363486 A JP 2001363486A JP 2001363486 A JP2001363486 A JP 2001363486A JP 2003163221 A5 JP2003163221 A5 JP 2003163221A5
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JP
Japan
Prior art keywords
region
crystallization
semiconductor film
amorphous semiconductor
crystallized
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Application number
JP2001363486A
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English (en)
Japanese (ja)
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JP2003163221A (ja
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Publication date
Application filed filed Critical
Priority to JP2001363486A priority Critical patent/JP2003163221A/ja
Priority claimed from JP2001363486A external-priority patent/JP2003163221A/ja
Priority to US10/305,264 priority patent/US6890840B2/en
Publication of JP2003163221A publication Critical patent/JP2003163221A/ja
Priority to US11/120,992 priority patent/US7449376B2/en
Publication of JP2003163221A5 publication Critical patent/JP2003163221A5/ja
Withdrawn legal-status Critical Current

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JP2001363486A 2001-11-28 2001-11-28 半導体装置の作製方法 Withdrawn JP2003163221A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001363486A JP2003163221A (ja) 2001-11-28 2001-11-28 半導体装置の作製方法
US10/305,264 US6890840B2 (en) 2001-11-28 2002-11-27 Method of manufacturing a semiconductor device, utilizing a laser beam for crystallization
US11/120,992 US7449376B2 (en) 2001-11-28 2005-05-04 Method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001363486A JP2003163221A (ja) 2001-11-28 2001-11-28 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008030523A Division JP4818288B2 (ja) 2008-02-12 2008-02-12 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2003163221A JP2003163221A (ja) 2003-06-06
JP2003163221A5 true JP2003163221A5 (enExample) 2005-06-30

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Family Applications (1)

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JP2001363486A Withdrawn JP2003163221A (ja) 2001-11-28 2001-11-28 半導体装置の作製方法

Country Status (2)

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US (2) US6890840B2 (enExample)
JP (1) JP2003163221A (enExample)

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US9001555B2 (en) 2012-03-30 2015-04-07 Chengdu Haicun Ip Technology Llc Small-grain three-dimensional memory
US9065009B2 (en) 2012-04-10 2015-06-23 First Solar, Inc. Apparatus and method for forming a transparent conductive oxide layer over a substrate using a laser
US9293509B2 (en) 2013-03-20 2016-03-22 HangZhou HaiCun Information Technology Co., Ltd. Small-grain three-dimensional memory
JP2017151443A (ja) * 2017-03-15 2017-08-31 株式会社半導体エネルギー研究所 液晶表示装置
JP2019049748A (ja) * 2018-11-28 2019-03-28 株式会社半導体エネルギー研究所 液晶表示装置

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