JP2003197521A5 - - Google Patents
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- Publication number
- JP2003197521A5 JP2003197521A5 JP2001390714A JP2001390714A JP2003197521A5 JP 2003197521 A5 JP2003197521 A5 JP 2003197521A5 JP 2001390714 A JP2001390714 A JP 2001390714A JP 2001390714 A JP2001390714 A JP 2001390714A JP 2003197521 A5 JP2003197521 A5 JP 2003197521A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- island
- shaped semiconductor
- shaped
- patterning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 222
- 238000000059 patterning Methods 0.000 claims 38
- 238000004519 manufacturing process Methods 0.000 claims 37
- 238000000034 method Methods 0.000 claims 37
- 239000000758 substrate Substances 0.000 claims 36
- 239000010409 thin film Substances 0.000 claims 20
- 230000001678 irradiating effect Effects 0.000 claims 16
- 229910052751 metal Inorganic materials 0.000 claims 11
- 239000002184 metal Substances 0.000 claims 11
- 238000010438 heat treatment Methods 0.000 claims 9
- 239000003550 marker Substances 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- UIZLQMLDSWKZGC-UHFFFAOYSA-N cadmium helium Chemical compound [He].[Cd] UIZLQMLDSWKZGC-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010979 ruby Substances 0.000 claims 1
- 229910001750 ruby Inorganic materials 0.000 claims 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001390714A JP3992976B2 (ja) | 2001-12-21 | 2001-12-21 | 半導体装置の作製方法 |
| TW091136549A TWI272722B (en) | 2001-12-21 | 2002-12-18 | Semiconductor device and manufacturing method therefor |
| US10/321,839 US6797550B2 (en) | 2001-12-21 | 2002-12-18 | Semiconductor device and manufacturing method therefor |
| CNB021569533A CN1331189C (zh) | 2001-12-21 | 2002-12-20 | 半导体器件及其制造方法 |
| KR1020020081621A KR100963811B1 (ko) | 2001-12-21 | 2002-12-20 | 반도체 디바이스 제조 방법 |
| US10/941,848 US7319055B2 (en) | 2001-12-21 | 2004-09-16 | Method of fabricating a semiconductor device utilizing crystallization of semiconductor region with laser beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001390714A JP3992976B2 (ja) | 2001-12-21 | 2001-12-21 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003197521A JP2003197521A (ja) | 2003-07-11 |
| JP2003197521A5 true JP2003197521A5 (enExample) | 2005-08-04 |
| JP3992976B2 JP3992976B2 (ja) | 2007-10-17 |
Family
ID=19188439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001390714A Expired - Fee Related JP3992976B2 (ja) | 2001-12-21 | 2001-12-21 | 半導体装置の作製方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6797550B2 (enExample) |
| JP (1) | JP3992976B2 (enExample) |
| KR (1) | KR100963811B1 (enExample) |
| CN (1) | CN1331189C (enExample) |
| TW (1) | TWI272722B (enExample) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US6242289B1 (en) * | 1995-09-08 | 2001-06-05 | Semiconductor Energy Laboratories Co., Ltd. | Method for producing semiconductor device |
| SG143981A1 (en) * | 2001-08-31 | 2008-07-29 | Semiconductor Energy Lab | Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device |
| US7050878B2 (en) * | 2001-11-22 | 2006-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductror fabricating apparatus |
| JP3992976B2 (ja) * | 2001-12-21 | 2007-10-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4030758B2 (ja) * | 2001-12-28 | 2008-01-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6841797B2 (en) | 2002-01-17 | 2005-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device formed over a surface with a drepession portion and a projection portion |
| JP4813743B2 (ja) * | 2002-07-24 | 2011-11-09 | 株式会社 日立ディスプレイズ | 画像表示装置の製造方法 |
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| JP4406540B2 (ja) * | 2003-03-28 | 2010-01-27 | シャープ株式会社 | 薄膜トランジスタ基板およびその製造方法 |
| US7220627B2 (en) * | 2003-04-21 | 2007-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device where the scanning direction changes between regions during crystallization and process |
| US7476629B2 (en) * | 2003-04-21 | 2009-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Beam irradiation apparatus, beam irradiation method, and method for manufacturing thin film transistor |
| JP2004363241A (ja) * | 2003-06-03 | 2004-12-24 | Advanced Lcd Technologies Development Center Co Ltd | 結晶化半導体層の形成方法及び形成装置ならびに半導体装置の製造方法 |
| TW200507279A (en) * | 2003-07-16 | 2005-02-16 | Adv Lcd Tech Dev Ct Co Ltd | Thin-film semiconductor substrate, method of manufacturing the same; apparatus for and method of crystallization;Thin-film semiconductor apparatus, method of manufacturing the same; |
| US7262463B2 (en) * | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
| KR100599966B1 (ko) * | 2003-08-25 | 2006-07-12 | 비오이 하이디스 테크놀로지 주식회사 | 다결정실리콘 박막트랜지스터 제조방법 |
| KR100531416B1 (ko) * | 2003-09-17 | 2005-11-29 | 엘지.필립스 엘시디 주식회사 | Sls 장비 및 이를 이용한 실리콘 결정화 방법 |
| US7148159B2 (en) * | 2003-09-29 | 2006-12-12 | Ultratech, Inc. | Laser thermal annealing of lightly doped silicon substrates |
| JP2005144487A (ja) * | 2003-11-13 | 2005-06-09 | Seiko Epson Corp | レーザ加工装置及びレーザ加工方法 |
| US7728256B2 (en) * | 2003-12-24 | 2010-06-01 | Lg Display Co., Ltd. | Silicon crystallization apparatus and silicon crystallization method thereof |
| KR100717333B1 (ko) * | 2004-02-20 | 2007-05-15 | 엘지전자 주식회사 | 일렉트로-루미네센스 표시 패널의 박막 트랜지스터 어레이및 그 제조 방법 |
| US7250627B2 (en) * | 2004-03-12 | 2007-07-31 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
| KR100599791B1 (ko) * | 2004-05-20 | 2006-07-13 | 삼성에스디아이 주식회사 | 발광 표시 장치 |
| JP4834853B2 (ja) | 2004-06-10 | 2011-12-14 | シャープ株式会社 | 薄膜トランジスタ回路、薄膜トランジスタ回路の設計方法、薄膜トランジスタ回路の設計プログラム、設計プログラム記録媒体、及び表示装置 |
| TWI260702B (en) * | 2004-12-10 | 2006-08-21 | Au Optronics Corp | Method of selective laser crystallization and display panel fabricated by using the same |
| KR101090258B1 (ko) | 2005-01-03 | 2011-12-06 | 삼성전자주식회사 | 플라스틱 기판을 이용한 박막 트랜지스터 표시판의 제조방법 |
| DE102005013783B4 (de) * | 2005-03-22 | 2007-08-16 | Jenoptik Automatisierungstechnik Gmbh | Verfahren zum Trennen von spröden Materialien mittels Laser mit unsymmetrischer Strahlungsdichteverteilung |
| CN101268415A (zh) * | 2005-09-22 | 2008-09-17 | 夏普株式会社 | 显示面板用的基板和具有该基板的显示面板 |
| WO2007046290A1 (en) * | 2005-10-18 | 2007-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP2007165716A (ja) | 2005-12-15 | 2007-06-28 | Advanced Lcd Technologies Development Center Co Ltd | レーザー結晶化装置及び結晶化方法 |
| JP4956987B2 (ja) | 2005-12-16 | 2012-06-20 | 株式会社島津製作所 | レーザー結晶化装置及び結晶化方法 |
| US7609079B2 (en) * | 2006-03-02 | 2009-10-27 | Dialog Semiconductor Gmbh | Probeless DC testing of CMOS I/O circuits |
| US8278739B2 (en) | 2006-03-20 | 2012-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor film, semiconductor device, and method for manufacturing thereof |
| EP1863090A1 (en) * | 2006-06-01 | 2007-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| TWI438823B (zh) * | 2006-08-31 | 2014-05-21 | Semiconductor Energy Lab | 晶體半導體膜的製造方法和半導體裝置 |
| US7791012B2 (en) | 2006-09-29 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes |
| US7972943B2 (en) | 2007-03-02 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| JP7083645B2 (ja) * | 2018-01-11 | 2022-06-13 | Jswアクティナシステム株式会社 | レーザ処理装置、レーザ処理方法及び半導体装置の製造方法 |
| CN109545688B (zh) * | 2018-11-20 | 2022-01-11 | 合肥鑫晟光电科技有限公司 | 薄膜晶体管的沟道区的最终宽长比确定方法及装置 |
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| JP4443646B2 (ja) | 1998-06-04 | 2010-03-31 | 東芝モバイルディスプレイ株式会社 | 多結晶半導体膜の製造方法 |
| JP3252811B2 (ja) * | 1998-11-05 | 2002-02-04 | 日本電気株式会社 | 半導体薄膜の製造方法 |
| JP2000174282A (ja) * | 1998-12-03 | 2000-06-23 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| TW457553B (en) * | 1999-01-08 | 2001-10-01 | Sony Corp | Process for producing thin film semiconductor device and laser irradiation apparatus |
| TW487959B (en) * | 1999-08-13 | 2002-05-21 | Semiconductor Energy Lab | Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device |
| US6410368B1 (en) * | 1999-10-26 | 2002-06-25 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device with TFT |
| JP2001291666A (ja) * | 2000-02-02 | 2001-10-19 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| JP4209606B2 (ja) * | 2001-08-17 | 2009-01-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4709442B2 (ja) * | 2001-08-28 | 2011-06-22 | 株式会社 日立ディスプレイズ | 薄膜トランジスタの製造方法 |
| TWI282126B (en) * | 2001-08-30 | 2007-06-01 | Semiconductor Energy Lab | Method for manufacturing semiconductor device |
| US7214573B2 (en) * | 2001-12-11 | 2007-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device that includes patterning sub-islands |
| US7135389B2 (en) * | 2001-12-20 | 2006-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Irradiation method of laser beam |
| JP3992976B2 (ja) * | 2001-12-21 | 2007-10-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4030758B2 (ja) * | 2001-12-28 | 2008-01-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2001
- 2001-12-21 JP JP2001390714A patent/JP3992976B2/ja not_active Expired - Fee Related
-
2002
- 2002-12-18 TW TW091136549A patent/TWI272722B/zh not_active IP Right Cessation
- 2002-12-18 US US10/321,839 patent/US6797550B2/en not_active Expired - Lifetime
- 2002-12-20 CN CNB021569533A patent/CN1331189C/zh not_active Expired - Fee Related
- 2002-12-20 KR KR1020020081621A patent/KR100963811B1/ko not_active Expired - Fee Related
-
2004
- 2004-09-16 US US10/941,848 patent/US7319055B2/en not_active Expired - Fee Related
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