JP2003188112A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2003188112A5 JP2003188112A5 JP2002329498A JP2002329498A JP2003188112A5 JP 2003188112 A5 JP2003188112 A5 JP 2003188112A5 JP 2002329498 A JP2002329498 A JP 2002329498A JP 2002329498 A JP2002329498 A JP 2002329498A JP 2003188112 A5 JP2003188112 A5 JP 2003188112A5
- Authority
- JP
- Japan
- Prior art keywords
- mirror
- semiconductor film
- laser
- manufacturing
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 67
- 238000004519 manufacturing process Methods 0.000 claims 27
- 238000000034 method Methods 0.000 claims 25
- 230000001678 irradiating effect Effects 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 8
- 239000012535 impurity Substances 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- UIZLQMLDSWKZGC-UHFFFAOYSA-N cadmium helium Chemical compound [He].[Cd] UIZLQMLDSWKZGC-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 238000002425 crystallisation Methods 0.000 claims 1
- 230000008025 crystallization Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010979 ruby Substances 0.000 claims 1
- 229910001750 ruby Inorganic materials 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002329498A JP4159858B2 (ja) | 2002-11-13 | 2002-11-13 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002329498A JP4159858B2 (ja) | 2002-11-13 | 2002-11-13 | 半導体装置の作製方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001359395A Division JP3973882B2 (ja) | 2001-11-26 | 2001-11-26 | レーザ照射装置およびレーザ照射方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003188112A JP2003188112A (ja) | 2003-07-04 |
| JP2003188112A5 true JP2003188112A5 (enExample) | 2005-07-14 |
| JP4159858B2 JP4159858B2 (ja) | 2008-10-01 |
Family
ID=27606785
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002329498A Expired - Fee Related JP4159858B2 (ja) | 2002-11-13 | 2002-11-13 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4159858B2 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012008103A1 (ja) * | 2010-07-16 | 2012-01-19 | パナソニック株式会社 | 結晶性半導体膜の製造方法及び結晶性半導体膜の製造装置 |
-
2002
- 2002-11-13 JP JP2002329498A patent/JP4159858B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101256947B (zh) | 激光辐照装置、激光辐照方法、以及半导体器件制造方法 | |
| US6855584B2 (en) | Method of manufacturing a semiconductor device | |
| TW558861B (en) | Laser irradiation stage, laser irradiation optical system, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device | |
| TWI291729B (en) | A semiconductor fabricating apparatus | |
| CN100479115C (zh) | 照射激光的方法、激光照射装置和半导体器件的制造方法 | |
| US7704812B2 (en) | Semiconductor circuit and method of fabricating the same | |
| US6927109B1 (en) | Laser irradiation apparatus laser irradiation method, semiconductor device and method of manufacturing a semiconductor device | |
| JP2003197521A5 (enExample) | ||
| KR101188356B1 (ko) | 레이저 조사장치, 레이저 조사방법 및 반도체장치의제조방법 | |
| KR101019137B1 (ko) | 레이저 조사방법 및 레이저 조사장치, 및 반도체장치의제조방법 | |
| CN100530524C (zh) | 激光辐射方法和使用其方法制造半导体装置的方法 | |
| KR101110169B1 (ko) | 레이저 조사방법 및 결정질 반도체막의 제조방법 | |
| US7232715B2 (en) | Method for fabricating semiconductor film and semiconductor device and laser processing apparatus | |
| CN1531037B (zh) | 激光辐照方法、设备以及用于制造半导体器件的方法 | |
| US7199027B2 (en) | Method of manufacturing a semiconductor film by plasma CVD using a noble gas and nitrogen | |
| US20050111105A1 (en) | Laser irradiation apparatus and method for manufacturing semiconductor device | |
| KR20020069175A (ko) | 반도체장치 제작방법 | |
| JP2003173968A (ja) | 半導体装置の作製方法 | |
| JP2003188112A5 (enExample) | ||
| JP2003068668A (ja) | レーザ照射用ステージ、レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法 | |
| JP4481040B2 (ja) | 半導体装置の作製方法 | |
| CN107799398B (zh) | 多晶硅薄膜的制作方法、薄膜、晶体管、基板及激光设备 | |
| JP2004048029A5 (enExample) | ||
| JP4503344B2 (ja) | ビーム照射装置および半導体装置の作製方法 | |
| JP2003224070A5 (enExample) |