KR101110169B1 - 레이저 조사방법 및 결정질 반도체막의 제조방법 - Google Patents
레이저 조사방법 및 결정질 반도체막의 제조방법 Download PDFInfo
- Publication number
- KR101110169B1 KR101110169B1 KR1020040109415A KR20040109415A KR101110169B1 KR 101110169 B1 KR101110169 B1 KR 101110169B1 KR 1020040109415 A KR1020040109415 A KR 1020040109415A KR 20040109415 A KR20040109415 A KR 20040109415A KR 101110169 B1 KR101110169 B1 KR 101110169B1
- Authority
- KR
- South Korea
- Prior art keywords
- laser beam
- semiconductor film
- laser
- substrate
- film
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 183
- 238000000034 method Methods 0.000 title claims description 98
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims abstract description 115
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 32
- 230000003287 optical effect Effects 0.000 claims description 28
- 230000004907 flux Effects 0.000 claims description 19
- 230000001678 irradiating effect Effects 0.000 claims description 19
- 230000001413 cellular effect Effects 0.000 claims description 3
- 238000009826 distribution Methods 0.000 abstract description 10
- 239000010408 film Substances 0.000 description 260
- 239000010410 layer Substances 0.000 description 70
- 239000012535 impurity Substances 0.000 description 47
- 238000005530 etching Methods 0.000 description 27
- 239000000463 material Substances 0.000 description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 22
- 239000011521 glass Substances 0.000 description 22
- 230000008569 process Effects 0.000 description 19
- 238000002425 crystallisation Methods 0.000 description 18
- 230000008025 crystallization Effects 0.000 description 17
- 239000011229 interlayer Substances 0.000 description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 description 14
- 239000013078 crystal Substances 0.000 description 14
- 239000001257 hydrogen Substances 0.000 description 14
- 229910052739 hydrogen Inorganic materials 0.000 description 14
- 238000002161 passivation Methods 0.000 description 14
- 238000011282 treatment Methods 0.000 description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 13
- 239000007789 gas Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 230000010355 oscillation Effects 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 230000005281 excited state Effects 0.000 description 9
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- 238000005224 laser annealing Methods 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- 238000000137 annealing Methods 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 7
- 230000001133 acceleration Effects 0.000 description 6
- 239000002585 base Substances 0.000 description 6
- 238000005984 hydrogenation reaction Methods 0.000 description 6
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 125000001424 substituent group Chemical group 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 150000001342 alkaline earth metals Chemical class 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- -1 polyethylene terephthalates Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 229910019015 Mg-Ag Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229920006397 acrylic thermoplastic Polymers 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0732—Shaping the laser spot into a rectangular shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0736—Shaping the laser spot into an oval shape, e.g. elliptic shape
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
Abstract
Description
Claims (60)
- 굴절률 n 및 두께 d의 기판 위에 형성된 피조사물에 레이저 발진기로부터 펄스 발진된 레이저빔을 조사하는 단계를 포함하고,상기 레이저빔의 펄스폭 t는 진공중의 광속을 c라고 하면 ct<2nd를 만족시키는 것을 특징으로 하는 레이저 조사방법.
- 삭제
- 삭제
- 삭제
- 굴절률 n 및 두께 d의 기판 위에 형성된 피조사물에 레이저 발진기로부터 펄스 발진된 레이저빔을 조사하는 단계를 포함하고,상기 레이저빔의 파장이 비선형 광학소자에 의해 변환되고,상기 레이저빔의 펄스폭 t는 진공중의 광속을 c라고 하면 ct<2nd를 만족시키는 것을 특징으로 하는 레이저 조사방법.
- 삭제
- 삭제
- 삭제
- 굴절률 n 및 두께 d의 기판 위에 형성된 피조사물에 레이저 발진기로부터 펄스 발진된 레이저빔을 조사하는 단계를 포함하고,상기 레이저빔의 펄스폭 t는 진공중의 광속을 c라고 하면 ct<4nd를 만족시키는 것을 특징으로 하는 레이저 조사방법.
- 삭제
- 삭제
- 삭제
- 굴절률 n 및 두께 d의 기판 위에 형성된 피조사물에 레이저 발진기로부터 펄스 발진된 레이저빔을 조사하는 단계를 포함하고,상기 레이저빔의 파장이 비선형 광학소자에 의해 변환되고,상기 레이저빔의 펄스폭 t는 진공중의 광속을 c라고 하면 ct<4nd를 만족시키는 것을 특징으로 하는 레이저 조사방법.
- 삭제
- 삭제
- 삭제
- 굴절률 n 및 두께 d의 기판 위에 형성된 피조사물에 레이저 발진기로부터 펄스 발진된 레이저빔을 조사하는 단계를 포함하고,상기 피조사물에 입사하는 레이저빔과 상기 기판의 이면에서 반사한 레이저빔 양쪽이 상기 레이저빔 펄스폭의 10% 이하에 해당하는 시간에 상기 피조사물의 1점에 동시에 조사되는 것을 특징으로 하는 레이저 조사방법.
- 삭제
- 삭제
- 삭제
- 굴절률 n 및 두께 d의 기판 위에 형성된 피조사물에 레이저 발진기로부터 펄스 발진된 레이저빔을 조사하는 단계를 포함하고,상기 레이저빔의 파장이 비선형 광학소자에 의해 변환되고,상기 피조사물에 입사하는 레이저빔과 상기 기판의 이면에서 반사한 레이저빔 양쪽이 상기 레이저빔 펄스폭의 10% 이하에 해당하는 시간에 상기 피조사물의 1점에 동시에 조사되는 것을 특징으로 하는 레이저 조사방법.
- 제 5 항, 제 13 항 또는 제 21 항 중 어느 한 항에 있어서,상기 파장이 변환된 레이저빔은 제2 고조파를 갖는 것을 특징으로 하는 레이저 조사방법.
- 제 1 항, 제 5 항, 제 9 항, 제13 항, 제 17 항, 또는 제 21 항 중 어느 한 항에 있어서,상기 레이저빔은 상기 피조사물에 수직으로 입사되는 것을 특징으로 하는 레이저 조사방법.
- 제 1 항, 제 5 항, 제 9 항, 제13 항, 제 17 항, 또는 제 21 항 중 어느 한 항에 있어서,상기 레이저빔은 상기 피조사물에 경사지게 입사되는 것을 특징으로 하는 레이저 조사방법.
- 굴절률 n 및 두께 d의 기판 위에 비정질 반도체막을 형성하는 단계와,상기 비정질 반도체막에 레이저 발진기로부터 펄스 발진된 레이저빔을 조사하여 결정질 반도체막을 형성하는 단계를 포함하고,상기 레이저빔은 진공중의 광속을 c라고 하면 ct<2nd를 만족시키는 펄스폭 t를 갖는 것을 특징으로 하는 반도체장치의 제조방법.
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 굴절률 n 및 두께 d의 기판 위에 비정질 반도체막을 형성하는 단계와,상기 비정질 반도체막에 레이저 발진기로부터 펄스 발진된 레이저빔을 조사하여 결정질 반도체막을 형성하는 단계를 포함하고,상기 레이저빔은 진공중의 광속을 c라고 하면 ct<4nd를 만족시키는 펄스폭 t를 갖는 것을 특징으로 하는 반도체장치의 제조방법.
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 굴절률 n 및 두께 d의 기판 위에 비정질 반도체막을 형성하는 단계와,상기 비정질 반도체막에 레이저발 진기로부터 펄스 발진된 레이저빔을 조사하여 결정질 반도체막을 형성하는 단계를 포함하고,상기 비정질 반도체막에 입사하는 레이저빔과 상기 기판의 이면에서 반사한 레이저빔 양쪽이 상기 레이저빔 펄스폭의 10% 이하에 해당하는 시간에 상기 비정질 반도체막의 1점에 동시에 조사되는 것을 특징으로 하는 반도체장치의 제조방법.
- 삭제
- 제 25 항, 제 31 항, 또는 제 37 항 중 어느 한 항에 있어서,상기 비정질 반도체막은 실리콘막으로 이루어진 것을 특징으로 하는 반도체장치의 제조방법.
- 제 25 항, 제 31 항, 또는 제 37 항 중 어느 한 항에 있어서,상기 레이저빔은 상기 비정질 반도체막에 수직으로 입사되는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 25 항, 제 31 항, 또는 제 37 항 중 어느 한 항에 있어서,상기 레이저빔은 상기 비정질 반도체막에 경사지게 입사되는 것을 특징으로 하는 반도체장치의 제조방법.
- 삭제
- 결정질 반도체막의 결정성을 개선하도록, 굴절률 n 및 두께 d의 기판 위에 형성된 결정질 반도체막에 레이저 발진기로부터 펄스발진된 레이저빔을 조사하는 단계를 포함하고,상기 레이저빔는 진공중의 광속을 c라고 하면 ct<2nd를 만족시키는 펄스폭 t를 갖는 것을 특징으로 하는 반도체장치의 제조방법.
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 결정질 반도체막의 결정성을 개선하도록, 굴절률 n 및 두께 d의 기판 위에 형성된 결정질 반도체막에 레이저 발진기로부터 펄스발진된 레이저빔을 조사하는 단계를 포함하고,상기 레이저빔은 진공중의 광속을 c라고 하면 ct<4nd를 만족시키는 펄스폭 t를 갖는 것을 특징으로 하는 반도체장치의 제조방법.
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 결정질 반도체막의 결정성을 개선하도록, 굴절률 n 및 두께 d의 기판 위에 형성된 결정질 반도체막에 레이저 발진기로부터 펄스발진된 레이저빔을 조사하는 단계를 포함하고,상기 결정질 반도체막에 입사하는 레이저빔과 상기 기판의 이면에서 반사한 레이저빔 양쪽이 상기 레이저빔 펄스폭의 10% 이하에 해당하는 시간에 상기 결정질 반도체막의 1점에 동시에 조사되는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 25 항, 제 31 항, 제 37 항, 제 43 항, 제 49 항, 또는 제 55 항 중 어느 한 항에 있어서,상기 레이저 발진기로부터 펄스발진된 레이저빔은, 비선형 광학소자에 의해 제2 고조파로 변환되는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 43 항, 제 49 항, 또는 제 55 항 중 어느 한 항에 있어서,상기 결정질 반도체막은 실리콘막으로 이루어진 것을 특징으로 하는 반도체장치의 제조방법.
- 제 43 항, 제 49 항, 또는 제 55 항 중 어느 한 항에 있어서,상기 레이저빔은 상기 결정질 반도체막에 수직으로 입사되는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 43 항, 제 49 항, 또는 제 55 항 중 어느 한 항에 있어서,상기 레이저빔은 상기 결정질 반도체막에 경사지게 입사되는 것을 특징으로 하는 반도체장치의 제조방법.
- 제 25 항, 제 31 항, 제 37 항, 제 43 항, 제 49 항, 또는 제 55 항 중 어느 한 항에 있어서,상기 반도체장치는, 퍼스널 컴퓨터, 비디오 카메라, 모바일 컴퓨터, 고글형 디스플레이, 재생장치, 디지털 카메라, 셀룰러폰, 모바일 서적 및 디스플레이로 이루어진 군으로부터 선택된 전자기기 내에 내장되는 것을 특징으로 하는 반도체장치의 제조방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2003-00432504 | 2003-12-26 | ||
JP2003432504 | 2003-12-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050067015A KR20050067015A (ko) | 2005-06-30 |
KR101110169B1 true KR101110169B1 (ko) | 2012-01-31 |
Family
ID=34587655
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040109415A KR101110169B1 (ko) | 2003-12-26 | 2004-12-21 | 레이저 조사방법 및 결정질 반도체막의 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7608527B2 (ko) |
EP (1) | EP1553643A3 (ko) |
KR (1) | KR101110169B1 (ko) |
CN (1) | CN100557771C (ko) |
TW (1) | TWI390811B (ko) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1639820B (zh) * | 2001-08-11 | 2010-05-26 | 敦提大学校董事会 | 场致发射背板 |
EP1537938A3 (en) | 2003-12-02 | 2009-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device |
EP1547719A3 (en) * | 2003-12-26 | 2009-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and method for manufacturing crystalline semiconductor film |
EP1553643A3 (en) | 2003-12-26 | 2009-01-21 | Sel Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method and method for manufacturing crystalline semiconductor film |
US7902002B2 (en) * | 2004-07-30 | 2011-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US7439111B2 (en) * | 2004-09-29 | 2008-10-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7292616B2 (en) * | 2005-02-09 | 2007-11-06 | Ultratech, Inc. | CO2 laser stabilization systems and methods |
EP1716964B1 (en) * | 2005-04-28 | 2009-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device and laser irradiation apparatus |
US7608490B2 (en) * | 2005-06-02 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2007046290A1 (en) * | 2005-10-18 | 2007-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7563661B2 (en) * | 2006-02-02 | 2009-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Crystallization method for semiconductor film, manufacturing method for semiconductor device, and laser irradiation apparatus |
US8278739B2 (en) * | 2006-03-20 | 2012-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor film, semiconductor device, and method for manufacturing thereof |
US7790636B2 (en) * | 2006-06-29 | 2010-09-07 | International Business Machines Corporation | Simultaneous irradiation of a substrate by multiple radiation sources |
US7635656B2 (en) | 2006-06-29 | 2009-12-22 | International Business Machines Corporation | Serial irradiation of a substrate by multiple radiation sources |
US8034724B2 (en) | 2006-07-21 | 2011-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US7935584B2 (en) * | 2006-08-31 | 2011-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing crystalline semiconductor device |
US7662703B2 (en) * | 2006-08-31 | 2010-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing crystalline semiconductor film and semiconductor device |
US20080090396A1 (en) * | 2006-10-06 | 2008-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Light exposure apparatus and method for making semiconductor device formed using the same |
US7972943B2 (en) * | 2007-03-02 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
GB0722120D0 (en) * | 2007-11-10 | 2007-12-19 | Quantum Filament Technologies | Improved field emission backplate |
KR20100110996A (ko) * | 2009-04-06 | 2010-10-14 | 주식회사 프로텍 | 그리드 이미지와 스테이지의 이동 각도 조절에 의한 레이저빔 간 피치조절 방법 |
KR101243920B1 (ko) * | 2010-01-07 | 2013-03-14 | 삼성디스플레이 주식회사 | 기판 밀봉에 사용되는 레이저 빔 조사 장치, 기판 밀봉 방법, 및 유기 발광 디스플레이 장치의 제조 방법 |
US8797512B2 (en) * | 2011-09-15 | 2014-08-05 | Advanced Scientific Concepts, Inc. | Automatic range corrected flash ladar camera |
KR20140091203A (ko) * | 2013-01-10 | 2014-07-21 | 삼성전자주식회사 | 반도체의 잔류 응력 제거장치 및 잔류 응력 제거방법 |
JP2015202594A (ja) * | 2014-04-11 | 2015-11-16 | セイコーエプソン株式会社 | 造形装置、造形方法 |
RU2661977C1 (ru) * | 2014-07-03 | 2018-07-23 | Ниппон Стил Энд Сумитомо Метал Корпорейшн | Устройство лазерной обработки |
CN105499790A (zh) * | 2015-12-30 | 2016-04-20 | 武汉嘉铭激光有限公司 | 一种激光加工头 |
WO2019028064A1 (en) * | 2017-07-31 | 2019-02-07 | Ipg Photonics Corporation | FIBER LASER APPARATUS AND PART PROCESSING METHOD |
US11600491B2 (en) * | 2017-07-31 | 2023-03-07 | Ipg Photonics Corporation | Laser apparatus and method of processing thin films |
CN114465086B (zh) * | 2022-01-19 | 2024-03-15 | 河南仕佳光子科技股份有限公司 | 一种dfb激光器光学膜的制备方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020053760A (ko) * | 2000-12-27 | 2002-07-05 | 야마자끼 순페이 | 레이저 어닐 방법 및 반도체장치 제작방법 |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0795538B2 (ja) | 1986-05-02 | 1995-10-11 | 旭硝子株式会社 | レ−ザ−アニ−ル装置 |
US4845354A (en) | 1988-03-08 | 1989-07-04 | International Business Machines Corporation | Process control for laser wire bonding |
JPH05107514A (ja) | 1991-10-18 | 1993-04-30 | Minolta Camera Co Ltd | 光シヤツタアレイ |
GB9219450D0 (en) | 1992-09-15 | 1992-10-28 | Glaverbel | Thin film thickness monitoring and control |
US5272708A (en) | 1992-10-30 | 1993-12-21 | The United States Of America As Represented By The Secretary Of The Navy | Two-micron modelocked laser system |
JPH06320292A (ja) | 1993-04-28 | 1994-11-22 | Nippon Steel Corp | レーザーアニール装置及びレーザーアニール方法 |
GB9308981D0 (en) | 1993-04-30 | 1993-06-16 | Science And Engineering Resear | Laser-excited x-ray source |
JP3469337B2 (ja) * | 1994-12-16 | 2003-11-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3381924B2 (ja) | 1995-03-10 | 2003-03-04 | 株式会社 日立製作所 | 検査装置 |
DE19628067C2 (de) | 1996-07-11 | 1998-04-30 | Heinz Dr Rinder | Nachweis von Mikrosporidien und Mikrosporidieninfektionen |
JP3191702B2 (ja) | 1996-11-25 | 2001-07-23 | 住友重機械工業株式会社 | ビームホモジナイザ |
US6037967A (en) | 1996-12-18 | 2000-03-14 | Etec Systems, Inc. | Short wavelength pulsed laser scanner |
US6218219B1 (en) | 1997-09-29 | 2001-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US6154310A (en) | 1997-11-21 | 2000-11-28 | Imra America, Inc. | Ultrashort-pulse source with controllable multiple-wavelength output |
WO2000072412A1 (de) | 1999-05-21 | 2000-11-30 | Gigaoptics Gmbh | Passiv modengekoppelter femtosekundenlaser |
GB2355309B (en) | 1999-09-27 | 2002-01-09 | Toshiba Res Europ Ltd | A radiation source |
US6483858B1 (en) | 1999-11-23 | 2002-11-19 | Southeastern University Research Assn. | Injection mode-locking Ti-sapphire laser system |
JP5123456B2 (ja) | 2000-01-10 | 2013-01-23 | エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド | 導電性リンクのレーザ切断方法およびレーザシステム |
US6368945B1 (en) | 2000-03-16 | 2002-04-09 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a continuous motion sequential lateral solidification |
JP2001326190A (ja) * | 2000-05-17 | 2001-11-22 | Nec Corp | 薄膜処理方法及び薄膜処理装置 |
US6528758B2 (en) | 2001-02-12 | 2003-03-04 | Icon Laser Technologies, Inc. | Method and apparatus for fading a dyed textile material |
JP5078205B2 (ja) | 2001-08-10 | 2012-11-21 | 株式会社半導体エネルギー研究所 | レーザ照射装置 |
JP4974425B2 (ja) | 2001-09-10 | 2012-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US20030058904A1 (en) | 2001-09-24 | 2003-03-27 | Gigatera Ag | Pulse-generating laser |
WO2003028177A1 (en) | 2001-09-24 | 2003-04-03 | Giga Tera Ag | Pulse-generating laser |
CN100508140C (zh) | 2001-11-30 | 2009-07-01 | 株式会社半导体能源研究所 | 用于半导体器件的制造方法 |
EP1329946A3 (en) | 2001-12-11 | 2005-04-06 | Sel Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device including a laser crystallization step |
US6760356B2 (en) | 2002-04-08 | 2004-07-06 | The Regents Of The University Of California | Application of Yb:YAG short pulse laser system |
KR20030095313A (ko) | 2002-06-07 | 2003-12-18 | 후지 샤신 필름 가부시기가이샤 | 레이저 어닐링장치 및 레이저 박막형성장치 |
US6908797B2 (en) | 2002-07-09 | 2005-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
US6952269B2 (en) | 2002-09-24 | 2005-10-04 | Intel Corporation | Apparatus and method for adiabatically heating a semiconductor surface |
JP2004128421A (ja) | 2002-10-07 | 2004-04-22 | Semiconductor Energy Lab Co Ltd | レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法 |
US7405114B2 (en) | 2002-10-16 | 2008-07-29 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and method of manufacturing semiconductor device |
US7476629B2 (en) | 2003-04-21 | 2009-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Beam irradiation apparatus, beam irradiation method, and method for manufacturing thin film transistor |
US7397592B2 (en) | 2003-04-21 | 2008-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Beam irradiation apparatus, beam irradiation method, and method for manufacturing a thin film transistor |
US7220627B2 (en) | 2003-04-21 | 2007-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device where the scanning direction changes between regions during crystallization and process |
EP1537938A3 (en) * | 2003-12-02 | 2009-02-18 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device |
EP1547719A3 (en) | 2003-12-26 | 2009-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and method for manufacturing crystalline semiconductor film |
EP1553643A3 (en) | 2003-12-26 | 2009-01-21 | Sel Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method and method for manufacturing crystalline semiconductor film |
-
2004
- 2004-12-15 EP EP04029713A patent/EP1553643A3/en not_active Withdrawn
- 2004-12-21 KR KR1020040109415A patent/KR101110169B1/ko active IP Right Grant
- 2004-12-21 TW TW093139837A patent/TWI390811B/zh not_active IP Right Cessation
- 2004-12-22 US US11/017,900 patent/US7608527B2/en active Active
- 2004-12-24 CN CNB2004100816849A patent/CN100557771C/zh not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020053760A (ko) * | 2000-12-27 | 2002-07-05 | 야마자끼 순페이 | 레이저 어닐 방법 및 반도체장치 제작방법 |
Also Published As
Publication number | Publication date |
---|---|
KR20050067015A (ko) | 2005-06-30 |
CN100557771C (zh) | 2009-11-04 |
EP1553643A2 (en) | 2005-07-13 |
TW200525844A (en) | 2005-08-01 |
EP1553643A3 (en) | 2009-01-21 |
TWI390811B (zh) | 2013-03-21 |
US7608527B2 (en) | 2009-10-27 |
CN1638040A (zh) | 2005-07-13 |
US20050139786A1 (en) | 2005-06-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101110169B1 (ko) | 레이저 조사방법 및 결정질 반도체막의 제조방법 | |
KR101114891B1 (ko) | 레이저 조사 장치, 레이저 조사 방법 및 결정성반도체막을 제조하는 방법 | |
JP5063660B2 (ja) | 半導体装置の作製方法 | |
US7326630B2 (en) | Method of fabricating semiconductor device utilizing laser irradiation | |
KR100848668B1 (ko) | 액티브 매트릭스 장치 제작방법 | |
JP4515034B2 (ja) | 半導体装置の作製方法 | |
US7351647B2 (en) | Method of irradiating a laser beam, apparatus for irradiating a laser beam and method of fabricating semiconductor devices | |
US7466735B2 (en) | Manufacturing method of semiconductor device | |
JP2003229376A (ja) | レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法 | |
JP2003017411A (ja) | レーザ照射装置、並びに半導体装置の作製方法 | |
JP4827305B2 (ja) | 半導体装置の作製方法 | |
JP4831961B2 (ja) | 半導体装置の作製方法、選択方法 | |
JP2005210103A (ja) | レーザ照射装置、レーザ照射方法及び結晶質半導体膜の作製方法 | |
JP2003142402A (ja) | 半導体装置の作製方法 | |
JP2003218058A (ja) | レーザ照射方法および半導体装置の作製方法 | |
JP4397582B2 (ja) | 半導体装置の作製方法 | |
JP2003257865A (ja) | 半導体装置及び半導体装置の生産システム | |
JP2003224083A (ja) | レーザ照射装置 | |
JP2004200559A6 (ja) | レーザ照射方法および半導体装置の作製方法 | |
JP2003158089A (ja) | レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法 | |
JP2003218057A (ja) | レーザ照射装置 | |
JP2004153022A6 (ja) | レーザ照射方法および半導体装置の作製方法 | |
JP2007103961A (ja) | レーザ照射装置、レーザ照射方法、及び半導体装置の作製方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20141230 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20151217 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20161220 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20171219 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20181226 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20191217 Year of fee payment: 9 |