JP2003318108A5 - - Google Patents
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- Publication number
- JP2003318108A5 JP2003318108A5 JP2002119031A JP2002119031A JP2003318108A5 JP 2003318108 A5 JP2003318108 A5 JP 2003318108A5 JP 2002119031 A JP2002119031 A JP 2002119031A JP 2002119031 A JP2002119031 A JP 2002119031A JP 2003318108 A5 JP2003318108 A5 JP 2003318108A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- amorphous silicon
- silicon film
- manufacturing
- laser light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims 64
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 31
- 229910052751 metal Inorganic materials 0.000 claims 18
- 239000002184 metal Substances 0.000 claims 18
- 238000000034 method Methods 0.000 claims 15
- 239000010409 thin film Substances 0.000 claims 13
- 238000004519 manufacturing process Methods 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 4
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 2
- 229910001182 Mo alloy Inorganic materials 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052715 tantalum Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 claims 1
- 229910021426 porous silicon Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002119031A JP4364481B2 (ja) | 2002-04-22 | 2002-04-22 | 薄膜トランジスタの作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002119031A JP4364481B2 (ja) | 2002-04-22 | 2002-04-22 | 薄膜トランジスタの作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003318108A JP2003318108A (ja) | 2003-11-07 |
| JP2003318108A5 true JP2003318108A5 (enExample) | 2005-09-22 |
| JP4364481B2 JP4364481B2 (ja) | 2009-11-18 |
Family
ID=29535705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002119031A Expired - Fee Related JP4364481B2 (ja) | 2002-04-22 | 2002-04-22 | 薄膜トランジスタの作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4364481B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005173881A (ja) * | 2003-12-10 | 2005-06-30 | Sanyo Electric Co Ltd | Ｅｌ表示装置 |
| KR101316633B1 (ko) * | 2004-07-28 | 2013-10-15 | 삼성디스플레이 주식회사 | 다결정 규소용 마스크 및 이의 제조방법과, 이를 이용한박막트랜지스터의 제조방법 |
| JP2007324425A (ja) | 2006-06-02 | 2007-12-13 | Sony Corp | 薄膜半導体装置及びその製造方法と表示装置 |
| US8106400B2 (en) * | 2008-10-24 | 2012-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| WO2011027656A1 (en) * | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and display device |
| CN103311129A (zh) * | 2013-06-17 | 2013-09-18 | 深圳市华星光电技术有限公司 | 薄膜晶体管阵列基板及其沟道形成方法 |
-
2002
- 2002-04-22 JP JP2002119031A patent/JP4364481B2/ja not_active Expired - Fee Related
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