JP2007053364A5 - - Google Patents

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Publication number
JP2007053364A5
JP2007053364A5 JP2006218286A JP2006218286A JP2007053364A5 JP 2007053364 A5 JP2007053364 A5 JP 2007053364A5 JP 2006218286 A JP2006218286 A JP 2006218286A JP 2006218286 A JP2006218286 A JP 2006218286A JP 2007053364 A5 JP2007053364 A5 JP 2007053364A5
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JP
Japan
Prior art keywords
thin film
silicone
laser beam
polycrystalline
amorphous
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JP2006218286A
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English (en)
Japanese (ja)
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JP2007053364A (ja
JP4864596B2 (ja
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Publication date
Priority claimed from KR1020050076347A external-priority patent/KR101132404B1/ko
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Publication of JP2007053364A publication Critical patent/JP2007053364A/ja
Publication of JP2007053364A5 publication Critical patent/JP2007053364A5/ja
Application granted granted Critical
Publication of JP4864596B2 publication Critical patent/JP4864596B2/ja
Expired - Fee Related legal-status Critical Current
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JP2006218286A 2005-08-19 2006-08-10 多結晶シリコーン薄膜の製造方法及びこの方法を利用した薄膜トランジスタの製造方法 Expired - Fee Related JP4864596B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2005-0076347 2005-08-19
KR1020050076347A KR101132404B1 (ko) 2005-08-19 2005-08-19 다결정 실리콘 박막의 제조 방법 및 이를 포함하는 박막트랜지스터의 제조 방법

Publications (3)

Publication Number Publication Date
JP2007053364A JP2007053364A (ja) 2007-03-01
JP2007053364A5 true JP2007053364A5 (enExample) 2009-09-24
JP4864596B2 JP4864596B2 (ja) 2012-02-01

Family

ID=37738099

Family Applications (1)

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JP2006218286A Expired - Fee Related JP4864596B2 (ja) 2005-08-19 2006-08-10 多結晶シリコーン薄膜の製造方法及びこの方法を利用した薄膜トランジスタの製造方法

Country Status (5)

Country Link
US (2) US7364992B2 (enExample)
JP (1) JP4864596B2 (enExample)
KR (1) KR101132404B1 (enExample)
CN (1) CN100555570C (enExample)
TW (1) TWI402989B (enExample)

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WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
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US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
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WO2007067541A2 (en) * 2005-12-05 2007-06-14 The Trustees Of Columbia University In The City Of New York Systems and methods for processing a film, and thin films
US8183498B2 (en) * 2006-05-01 2012-05-22 Tcz, Llc Systems and method for optimization of laser beam spatial intensity profile
TW200942935A (en) 2007-09-21 2009-10-16 Univ Columbia Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same
WO2009042784A1 (en) 2007-09-25 2009-04-02 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
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WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US8012861B2 (en) * 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
JP5369640B2 (ja) * 2008-02-19 2013-12-18 旭硝子株式会社 Ｅｕｖｌ用光学部材、およびその平滑化方法
KR101413370B1 (ko) * 2008-02-29 2014-06-30 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 결정질 막 제조 방법, 태양전지 형성 방법 및 이 방법에 의해 제조된 결정질 막 및 태양 전지
WO2009111340A2 (en) * 2008-02-29 2009-09-11 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
TWI452632B (zh) * 2008-02-29 2014-09-11 Univ Columbia 製造均勻一致結晶矽膜的微影方法
US8445364B2 (en) * 2008-06-02 2013-05-21 Corning Incorporated Methods of treating semiconducting materials including melting and cooling
KR20110094022A (ko) 2008-11-14 2011-08-19 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 박막 결정화를 위한 시스템 및 방법
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
MX2012005204A (es) * 2009-11-03 2012-09-21 Univ Columbia Sistemas y metodos para el procesamiento de peliculas por fusion parcial mediante pulsos no periodicos.
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
CN102651311B (zh) * 2011-12-20 2014-12-17 京东方科技集团股份有限公司 一种低温多晶硅薄膜的制备方法及低温多晶硅薄膜
TWI495091B (zh) * 2012-02-16 2015-08-01 Au Optronics Corp 陣列基板及多晶矽層的製作方法
KR102014167B1 (ko) * 2012-12-06 2019-10-22 삼성디스플레이 주식회사 다결정 실리콘층의 제조 방법, 상기 다결정 실리콘층의 제조 방법을 포함하는 유기 발광 표시 장치의 제조 방법, 및 그 제조 방법에 의해 제조된 유기 발광 표시 장치
KR20170041962A (ko) 2015-10-07 2017-04-18 삼성디스플레이 주식회사 박막 트랜지스터 표시판의 제조 방법 및 박막 트랜지스터 표시판
KR20210070417A (ko) 2019-12-04 2021-06-15 삼성디스플레이 주식회사 표시 장치

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KR101016510B1 (ko) * 2004-06-30 2011-02-24 엘지디스플레이 주식회사 레이저 결정화방법 및 결정화 장치
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films

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