KR101132404B1 - 다결정 실리콘 박막의 제조 방법 및 이를 포함하는 박막트랜지스터의 제조 방법 - Google Patents

다결정 실리콘 박막의 제조 방법 및 이를 포함하는 박막트랜지스터의 제조 방법 Download PDF

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KR101132404B1
KR101132404B1 KR1020050076347A KR20050076347A KR101132404B1 KR 101132404 B1 KR101132404 B1 KR 101132404B1 KR 1020050076347 A KR1020050076347 A KR 1020050076347A KR 20050076347 A KR20050076347 A KR 20050076347A KR 101132404 B1 KR101132404 B1 KR 101132404B1
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thin film
silicon thin
laser beam
polycrystalline silicon
amorphous silicon
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KR1020050076347A
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Korean (ko)
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KR20070021747A (ko
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김동범
정세진
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삼성전자주식회사
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Priority to KR1020050076347A priority Critical patent/KR101132404B1/ko
Priority to CNB2006101038567A priority patent/CN100555570C/zh
Priority to JP2006218286A priority patent/JP4864596B2/ja
Priority to US11/506,723 priority patent/US7364992B2/en
Priority to TW095130404A priority patent/TWI402989B/zh
Publication of KR20070021747A publication Critical patent/KR20070021747A/ko
Priority to US12/045,932 priority patent/US7985665B2/en
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Publication of KR101132404B1 publication Critical patent/KR101132404B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
KR1020050076347A 2005-08-19 2005-08-19 다결정 실리콘 박막의 제조 방법 및 이를 포함하는 박막트랜지스터의 제조 방법 Expired - Fee Related KR101132404B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020050076347A KR101132404B1 (ko) 2005-08-19 2005-08-19 다결정 실리콘 박막의 제조 방법 및 이를 포함하는 박막트랜지스터의 제조 방법
CNB2006101038567A CN100555570C (zh) 2005-08-19 2006-08-04 形成多晶硅薄膜的方法及用该方法制造薄膜晶体管的方法
JP2006218286A JP4864596B2 (ja) 2005-08-19 2006-08-10 多結晶シリコーン薄膜の製造方法及びこの方法を利用した薄膜トランジスタの製造方法
US11/506,723 US7364992B2 (en) 2005-08-19 2006-08-18 Method of forming polycrystalline silicon thin film and method of manufacturing thin film transistor using the method
TW095130404A TWI402989B (zh) 2005-08-19 2006-08-18 形成多晶矽薄膜之方法及使用該方法以製造薄膜電晶體之方法
US12/045,932 US7985665B2 (en) 2005-08-19 2008-03-11 Method of forming polycrystalline silicon thin film and method of manufacturing thin film transistor using the method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050076347A KR101132404B1 (ko) 2005-08-19 2005-08-19 다결정 실리콘 박막의 제조 방법 및 이를 포함하는 박막트랜지스터의 제조 방법

Publications (2)

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KR20070021747A KR20070021747A (ko) 2007-02-23
KR101132404B1 true KR101132404B1 (ko) 2012-04-03

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KR1020050076347A Expired - Fee Related KR101132404B1 (ko) 2005-08-19 2005-08-19 다결정 실리콘 박막의 제조 방법 및 이를 포함하는 박막트랜지스터의 제조 방법

Country Status (5)

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US (2) US7364992B2 (enExample)
JP (1) JP4864596B2 (enExample)
KR (1) KR101132404B1 (enExample)
CN (1) CN100555570C (enExample)
TW (1) TWI402989B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9806100B2 (en) 2015-10-07 2017-10-31 Samsung Display Co., Ltd. Manufacturing method of thin film transistor array panel and thin film transistor array panel

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US7164152B2 (en) * 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
US7318866B2 (en) * 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
WO2007022234A1 (en) * 2005-08-16 2007-02-22 The Trustees Of Columbia University In The City Of New York Systems and methods for uniform sequential lateral solidification of thin films using high frequency lasers
JP2009505432A (ja) * 2005-08-16 2009-02-05 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 薄膜のハイ・スループット結晶化
WO2007067541A2 (en) * 2005-12-05 2007-06-14 The Trustees Of Columbia University In The City Of New York Systems and methods for processing a film, and thin films
US8183498B2 (en) * 2006-05-01 2012-05-22 Tcz, Llc Systems and method for optimization of laser beam spatial intensity profile
TW200942935A (en) 2007-09-21 2009-10-16 Univ Columbia Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same
WO2009042784A1 (en) 2007-09-25 2009-04-02 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
EP2212913A4 (en) * 2007-11-21 2013-10-30 Univ Columbia SYSTEMS AND METHOD FOR PRODUCING EPITACTIC STRUCTURED THICK FILMS
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US8012861B2 (en) * 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
JP5369640B2 (ja) * 2008-02-19 2013-12-18 旭硝子株式会社 Ｅｕｖｌ用光学部材、およびその平滑化方法
KR101413370B1 (ko) * 2008-02-29 2014-06-30 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 결정질 막 제조 방법, 태양전지 형성 방법 및 이 방법에 의해 제조된 결정질 막 및 태양 전지
WO2009111340A2 (en) * 2008-02-29 2009-09-11 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
TWI452632B (zh) * 2008-02-29 2014-09-11 Univ Columbia 製造均勻一致結晶矽膜的微影方法
US8445364B2 (en) * 2008-06-02 2013-05-21 Corning Incorporated Methods of treating semiconducting materials including melting and cooling
KR20110094022A (ko) 2008-11-14 2011-08-19 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 박막 결정화를 위한 시스템 및 방법
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
MX2012005204A (es) * 2009-11-03 2012-09-21 Univ Columbia Sistemas y metodos para el procesamiento de peliculas por fusion parcial mediante pulsos no periodicos.
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
CN102651311B (zh) * 2011-12-20 2014-12-17 京东方科技集团股份有限公司 一种低温多晶硅薄膜的制备方法及低温多晶硅薄膜
TWI495091B (zh) * 2012-02-16 2015-08-01 Au Optronics Corp 陣列基板及多晶矽層的製作方法
KR102014167B1 (ko) * 2012-12-06 2019-10-22 삼성디스플레이 주식회사 다결정 실리콘층의 제조 방법, 상기 다결정 실리콘층의 제조 방법을 포함하는 유기 발광 표시 장치의 제조 방법, 및 그 제조 방법에 의해 제조된 유기 발광 표시 장치
KR20210070417A (ko) 2019-12-04 2021-06-15 삼성디스플레이 주식회사 표시 장치

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JP2007053364A (ja) 2007-03-01
US20070054477A1 (en) 2007-03-08
US7985665B2 (en) 2011-07-26
JP4864596B2 (ja) 2012-02-01
US20080213985A1 (en) 2008-09-04
KR20070021747A (ko) 2007-02-23
TW200713598A (en) 2007-04-01
CN1917146A (zh) 2007-02-21
US7364992B2 (en) 2008-04-29
CN100555570C (zh) 2009-10-28
TWI402989B (zh) 2013-07-21

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