JP2000066133A5 - - Google Patents

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Publication number
JP2000066133A5
JP2000066133A5 JP1999135991A JP13599199A JP2000066133A5 JP 2000066133 A5 JP2000066133 A5 JP 2000066133A5 JP 1999135991 A JP1999135991 A JP 1999135991A JP 13599199 A JP13599199 A JP 13599199A JP 2000066133 A5 JP2000066133 A5 JP 2000066133A5
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JP
Japan
Prior art keywords
laser beam
axis direction
adjusting
lenses
pair
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JP1999135991A
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English (en)
Japanese (ja)
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JP2000066133A (ja
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Priority to JP11135991A priority Critical patent/JP2000066133A/ja
Priority claimed from JP11135991A external-priority patent/JP2000066133A/ja
Priority to US09/326,173 priority patent/US6172820B1/en
Publication of JP2000066133A publication Critical patent/JP2000066133A/ja
Publication of JP2000066133A5 publication Critical patent/JP2000066133A5/ja
Pending legal-status Critical Current

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JP11135991A 1998-06-08 1999-05-17 レ―ザ―光照射装置 Pending JP2000066133A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11135991A JP2000066133A (ja) 1998-06-08 1999-05-17 レ―ザ―光照射装置
US09/326,173 US6172820B1 (en) 1998-06-08 1999-06-04 Laser irradiation device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP15913398 1998-06-08
JP10-159133 1998-06-08
JP11135991A JP2000066133A (ja) 1998-06-08 1999-05-17 レ―ザ―光照射装置

Publications (2)

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JP2000066133A JP2000066133A (ja) 2000-03-03
JP2000066133A5 true JP2000066133A5 (enExample) 2006-06-29

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JP11135991A Pending JP2000066133A (ja) 1998-06-08 1999-05-17 レ―ザ―光照射装置

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US (1) US6172820B1 (enExample)
JP (1) JP2000066133A (enExample)

Families Citing this family (68)

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US6830993B1 (en) * 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
USD444800S1 (en) 2000-09-19 2001-07-10 Richard T. Miller Laser wire stripping apparatus case
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JP4583709B2 (ja) * 2000-11-27 2010-11-17 ザ・トラスティーズ・オブ・コロンビア・ユニバーシティ・イン・ザ・シティ・オブ・ニューヨーク 基板上の半導体膜領域のレーザー結晶化処理のための方法及びマスク投影装置
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US7718517B2 (en) * 2002-08-19 2010-05-18 Im James S Single-shot semiconductor processing system and method having various irradiation patterns
KR101131040B1 (ko) * 2002-08-19 2012-03-30 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 에지 영역을 최소화하도록 기판 상의 박막 영역을 레이저결정화 처리하는 방법 및 시스템, 그리고 그러한 박막 영역의 구조
KR20040043251A (ko) * 2002-11-18 2004-05-24 차연선 선형레이져 조사장치
JP4515088B2 (ja) * 2002-12-25 2010-07-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7387922B2 (en) * 2003-01-21 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, method for manufacturing semiconductor device, and laser irradiation system
JP5164378B2 (ja) * 2003-02-19 2013-03-21 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 逐次的横方向結晶化技術を用いて結晶化させた複数の半導体薄膜フィルムを処理するシステム及びプロセス
US7164152B2 (en) * 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
TWI351713B (en) * 2003-09-16 2011-11-01 Univ Columbia Method and system for providing a single-scan, con
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
WO2005029548A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York System and process for providing multiple beam sequential lateral solidification
WO2005029550A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for producing crystalline thin films with a uniform crystalline orientation
US7318866B2 (en) 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
WO2005029546A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
WO2005029547A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
US7311778B2 (en) * 2003-09-19 2007-12-25 The Trustees Of Columbia University In The City Of New York Single scan irradiation for crystallization of thin films
WO2005093801A1 (en) 2004-03-26 2005-10-06 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and laser irradiation apparatus
US8525075B2 (en) 2004-05-06 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US8304313B2 (en) * 2004-08-23 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) * 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
JP5153086B2 (ja) * 2005-05-02 2013-02-27 株式会社半導体エネルギー研究所 レーザ照射装置
KR101284201B1 (ko) 2005-05-02 2013-07-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레이저 조사 장치 및 레이저 조사 방법
US20090218577A1 (en) * 2005-08-16 2009-09-03 Im James S High throughput crystallization of thin films
US8598588B2 (en) * 2005-12-05 2013-12-03 The Trustees Of Columbia University In The City Of New York Systems and methods for processing a film, and thin films
WO2007072837A1 (en) * 2005-12-20 2007-06-28 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method for manufacturing semiconductor device
US8614471B2 (en) * 2007-09-21 2013-12-24 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
TWI418037B (zh) 2007-09-25 2013-12-01 Univ Columbia 藉由改變形狀、大小或雷射光束在製造於橫向結晶化薄膜上之薄膜電晶體元件中產生高一致性的方法
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
CN101919058B (zh) * 2007-11-21 2014-01-01 纽约市哥伦比亚大学理事会 用于制备外延纹理厚膜的系统和方法
CN102513701B (zh) 2008-01-07 2015-08-19 株式会社Ihi 激光退火方法以及装置
WO2009111340A2 (en) * 2008-02-29 2009-09-11 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
JP2011515834A (ja) * 2008-02-29 2011-05-19 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 均一な結晶シリコン薄膜を製造するリソグラフィ方法
JP2011515833A (ja) * 2008-02-29 2011-05-19 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 薄膜のためのフラッシュ光アニーリング
JP5240764B2 (ja) * 2008-05-28 2013-07-17 株式会社日本製鋼所 レーザ光照射装置
WO2009150733A1 (ja) * 2008-06-12 2009-12-17 株式会社Ihi レーザアニール方法及びレーザアニール装置
DE102008029622B4 (de) * 2008-06-23 2018-05-09 Ihi Corporation Laserglühverfahren und Laserglühvorrichtung
WO2010056990A1 (en) 2008-11-14 2010-05-20 The Trustees Of Columbia University In The City Of New York Systems and methods for the crystallization of thin films
KR101116783B1 (ko) 2009-09-16 2012-03-05 주식회사 제이미크론 레이저를 이용한 부분 도금 장치 및 부분 도금 방법
KR101184430B1 (ko) 2009-09-16 2012-09-20 주식회사 제이미크론 도금방지막을 이용한 부분 도금 장치 및 부분 도금 방법
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
KR101288993B1 (ko) * 2011-12-20 2013-08-16 삼성디스플레이 주식회사 레이저 어닐링 장치
JP5717146B2 (ja) * 2012-10-23 2015-05-13 株式会社日本製鋼所 レーザラインビーム改善装置およびレーザ処理装置
EP2966671B1 (en) * 2013-03-07 2022-08-31 Mitsubishi Electric Corporation Laser annealing device, and method of producing semiconductor device
KR102463885B1 (ko) * 2015-10-21 2022-11-07 삼성디스플레이 주식회사 레이저 어닐링 장치 및 이를 이용한 디스플레이 장치 제조방법
KR102446583B1 (ko) * 2016-11-03 2022-09-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 레이저 가공 장치, 적층체의 가공 장치, 및 레이저 가공 방법
EP4107826A4 (en) * 2020-02-19 2024-03-20 Elemental Scientific Lasers, LLC VARIABLE BEAM SIZE VIA A HOMQGENIZER MOVEMENT

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