JP2000066133A5 - - Google Patents

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Publication number
JP2000066133A5
JP2000066133A5 JP1999135991A JP13599199A JP2000066133A5 JP 2000066133 A5 JP2000066133 A5 JP 2000066133A5 JP 1999135991 A JP1999135991 A JP 1999135991A JP 13599199 A JP13599199 A JP 13599199A JP 2000066133 A5 JP2000066133 A5 JP 2000066133A5
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JP
Japan
Prior art keywords
laser beam
axis direction
adjusting
lenses
pair
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Pending
Application number
JP1999135991A
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English (en)
Japanese (ja)
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JP2000066133A (ja
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Priority to JP11135991A priority Critical patent/JP2000066133A/ja
Priority claimed from JP11135991A external-priority patent/JP2000066133A/ja
Priority to US09/326,173 priority patent/US6172820B1/en
Publication of JP2000066133A publication Critical patent/JP2000066133A/ja
Publication of JP2000066133A5 publication Critical patent/JP2000066133A5/ja
Pending legal-status Critical Current

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JP11135991A 1998-06-08 1999-05-17 レ―ザ―光照射装置 Pending JP2000066133A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11135991A JP2000066133A (ja) 1998-06-08 1999-05-17 レ―ザ―光照射装置
US09/326,173 US6172820B1 (en) 1998-06-08 1999-06-04 Laser irradiation device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-159133 1998-06-08
JP15913398 1998-06-08
JP11135991A JP2000066133A (ja) 1998-06-08 1999-05-17 レ―ザ―光照射装置

Publications (2)

Publication Number Publication Date
JP2000066133A JP2000066133A (ja) 2000-03-03
JP2000066133A5 true JP2000066133A5 (enExample) 2006-06-29

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JP11135991A Pending JP2000066133A (ja) 1998-06-08 1999-05-17 レ―ザ―光照射装置

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US (1) US6172820B1 (enExample)
JP (1) JP2000066133A (enExample)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555449B1 (en) * 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
JP4663047B2 (ja) * 1998-07-13 2011-03-30 株式会社半導体エネルギー研究所 レーザー照射装置及び半導体装置の作製方法
US6393042B1 (en) * 1999-03-08 2002-05-21 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer and laser irradiation apparatus
US6368945B1 (en) * 2000-03-16 2002-04-09 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification
US6830993B1 (en) * 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
USD444800S1 (en) 2000-09-19 2001-07-10 Richard T. Miller Laser wire stripping apparatus case
MXPA02005590A (es) * 2000-10-10 2002-09-30 Univ Columbia Metodo y aparato para procesar capas de metal delgadas.
TW546684B (en) * 2000-11-27 2003-08-11 Univ Columbia Process and mask projection system for laser crystallization processing of semiconductor film regions on a substrate
MY127193A (en) * 2000-12-26 2006-11-30 Semiconductor Energy Lab Laser irradiation apparatus and method of laser irradiation
US6955956B2 (en) * 2000-12-26 2005-10-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4837170B2 (ja) * 2001-01-12 2011-12-14 株式会社Ｉｈｉ レーザアニール方法及び装置
US6770546B2 (en) * 2001-07-30 2004-08-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP2005525689A (ja) * 2001-08-27 2005-08-25 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク ミクロ構造の非整列による多結晶薄膜トランジスタの均一性の改善
SG143981A1 (en) * 2001-08-31 2008-07-29 Semiconductor Energy Lab Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device
US7105048B2 (en) * 2001-11-30 2006-09-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
AU2003220611A1 (en) * 2002-04-01 2003-10-20 The Trustees Of Columbia University In The City Of New York Method and system for providing a thin film
JP5030382B2 (ja) * 2002-08-19 2012-09-19 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 基板上のフィルム領域を処理して、こうした領域内及びその端部領域をほぼ均一にするレーザ結晶化プロセス及びシステム
AU2003258288A1 (en) * 2002-08-19 2004-03-03 The Trustees Of Columbia University In The City Of New York Process and system for processing a thin film sample and thin film structure
TWI378307B (en) * 2002-08-19 2012-12-01 Univ Columbia Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
AU2003258289A1 (en) * 2002-08-19 2004-03-03 The Trustees Of Columbia University In The City Of New York A single-shot semiconductor processing system and method having various irradiation patterns
KR20040043251A (ko) * 2002-11-18 2004-05-24 차연선 선형레이져 조사장치
JP4515088B2 (ja) * 2002-12-25 2010-07-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7387922B2 (en) * 2003-01-21 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, method for manufacturing semiconductor device, and laser irradiation system
JP5164378B2 (ja) * 2003-02-19 2013-03-21 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 逐次的横方向結晶化技術を用いて結晶化させた複数の半導体薄膜フィルムを処理するシステム及びプロセス
US7318866B2 (en) 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
WO2005029550A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for producing crystalline thin films with a uniform crystalline orientation
WO2005029549A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for facilitating bi-directional growth
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
US7164152B2 (en) * 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
WO2005029548A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York System and process for providing multiple beam sequential lateral solidification
WO2005029546A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
WO2005029547A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
CN100541722C (zh) 2004-03-26 2009-09-16 株式会社半导体能源研究所 激光辐照方法和激光辐照装置
US8525075B2 (en) 2004-05-06 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
CN101667538B (zh) * 2004-08-23 2012-10-10 株式会社半导体能源研究所 半导体器件及其制造方法
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
JP5153086B2 (ja) * 2005-05-02 2013-02-27 株式会社半導体エネルギー研究所 レーザ照射装置
WO2006118312A1 (en) 2005-05-02 2006-11-09 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and laser irradiation method
JP2009505432A (ja) * 2005-08-16 2009-02-05 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 薄膜のハイ・スループット結晶化
WO2007067541A2 (en) * 2005-12-05 2007-06-14 The Trustees Of Columbia University In The City Of New York Systems and methods for processing a film, and thin films
WO2007072837A1 (en) * 2005-12-20 2007-06-28 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method for manufacturing semiconductor device
TW200942935A (en) 2007-09-21 2009-10-16 Univ Columbia Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same
WO2009042784A1 (en) 2007-09-25 2009-04-02 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
EP2212913A4 (en) * 2007-11-21 2013-10-30 Univ Columbia SYSTEMS AND METHOD FOR PRODUCING EPITACTIC STRUCTURED THICK FILMS
KR101162575B1 (ko) * 2008-01-07 2012-07-05 가부시키가이샤 아이에이치아이 레이저 어닐링 방법 및 장치
TWI452632B (zh) * 2008-02-29 2014-09-11 Univ Columbia 製造均勻一致結晶矽膜的微影方法
KR101413370B1 (ko) * 2008-02-29 2014-06-30 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 결정질 막 제조 방법, 태양전지 형성 방법 및 이 방법에 의해 제조된 결정질 막 및 태양 전지
WO2009111340A2 (en) * 2008-02-29 2009-09-11 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
JP5240764B2 (ja) * 2008-05-28 2013-07-17 株式会社日本製鋼所 レーザ光照射装置
US8115137B2 (en) * 2008-06-12 2012-02-14 Ihi Corporation Laser annealing method and laser annealing apparatus
DE102008029622B4 (de) * 2008-06-23 2018-05-09 Ihi Corporation Laserglühverfahren und Laserglühvorrichtung
KR20110094022A (ko) 2008-11-14 2011-08-19 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 박막 결정화를 위한 시스템 및 방법
KR101116783B1 (ko) 2009-09-16 2012-03-05 주식회사 제이미크론 레이저를 이용한 부분 도금 장치 및 부분 도금 방법
KR101184430B1 (ko) 2009-09-16 2012-09-20 주식회사 제이미크론 도금방지막을 이용한 부분 도금 장치 및 부분 도금 방법
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
KR101288993B1 (ko) * 2011-12-20 2013-08-16 삼성디스플레이 주식회사 레이저 어닐링 장치
JP5717146B2 (ja) * 2012-10-23 2015-05-13 株式会社日本製鋼所 レーザラインビーム改善装置およびレーザ処理装置
CN105074875B (zh) * 2013-03-07 2018-09-18 三菱电机株式会社 激光退火装置、半导体装置的制造方法
KR102463885B1 (ko) * 2015-10-21 2022-11-07 삼성디스플레이 주식회사 레이저 어닐링 장치 및 이를 이용한 디스플레이 장치 제조방법
JP6513889B2 (ja) * 2016-11-03 2019-05-15 株式会社半導体エネルギー研究所 レーザ加工装置、積層体の加工装置およびレーザ加工方法
JP7601422B2 (ja) * 2020-02-19 2024-12-17 エレメンタル・サイエンティフィック・レーザーズ・リミテッド・ライアビリティ・カンパニー ホモジナイザの動きによる可変ビームサイズ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05127077A (ja) 1991-10-31 1993-05-25 Minolta Camera Co Ltd シリンドリカルレンズ系
DE19581386C2 (de) * 1994-10-13 1998-07-23 Hitachi Construction Machinery Vorrichtung und Verfahren zum Schneiden von Hemmstegen (Dam-bars)
JPH10209028A (ja) * 1997-01-16 1998-08-07 Nikon Corp 照明光学装置及び半導体素子の製造方法

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