JP2000066133A - レ―ザ―光照射装置 - Google Patents

レ―ザ―光照射装置

Info

Publication number
JP2000066133A
JP2000066133A JP11135991A JP13599199A JP2000066133A JP 2000066133 A JP2000066133 A JP 2000066133A JP 11135991 A JP11135991 A JP 11135991A JP 13599199 A JP13599199 A JP 13599199A JP 2000066133 A JP2000066133 A JP 2000066133A
Authority
JP
Japan
Prior art keywords
laser light
laser beam
lens
lenses
axis direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11135991A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000066133A5 (enExample
Inventor
Takashi Kuwabara
隆 桑原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP11135991A priority Critical patent/JP2000066133A/ja
Priority to US09/326,173 priority patent/US6172820B1/en
Publication of JP2000066133A publication Critical patent/JP2000066133A/ja
Publication of JP2000066133A5 publication Critical patent/JP2000066133A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/095—Refractive optical elements
    • G02B27/0955—Lenses
    • G02B27/0966—Cylindrical lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0738—Shaping the laser spot into a linear shape
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0905—Dividing and/or superposing multiple light beams

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Lasers (AREA)
JP11135991A 1998-06-08 1999-05-17 レ―ザ―光照射装置 Pending JP2000066133A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11135991A JP2000066133A (ja) 1998-06-08 1999-05-17 レ―ザ―光照射装置
US09/326,173 US6172820B1 (en) 1998-06-08 1999-06-04 Laser irradiation device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-159133 1998-06-08
JP15913398 1998-06-08
JP11135991A JP2000066133A (ja) 1998-06-08 1999-05-17 レ―ザ―光照射装置

Publications (2)

Publication Number Publication Date
JP2000066133A true JP2000066133A (ja) 2000-03-03
JP2000066133A5 JP2000066133A5 (enExample) 2006-06-29

Family

ID=26469693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11135991A Pending JP2000066133A (ja) 1998-06-08 1999-05-17 レ―ザ―光照射装置

Country Status (2)

Country Link
US (1) US6172820B1 (enExample)
JP (1) JP2000066133A (enExample)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004221560A (ja) * 2002-12-25 2004-08-05 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
JP2006339630A (ja) * 2005-05-02 2006-12-14 Semiconductor Energy Lab Co Ltd レーザ照射装置、およびレーザ照射方法
JP2009289871A (ja) * 2008-05-28 2009-12-10 Japan Steel Works Ltd:The レーザ光照射装置
KR101116783B1 (ko) 2009-09-16 2012-03-05 주식회사 제이미크론 레이저를 이용한 부분 도금 장치 및 부분 도금 방법
CN102513701A (zh) * 2008-01-07 2012-06-27 株式会社Ihi 激光退火方法以及装置
KR101184430B1 (ko) 2009-09-16 2012-09-20 주식회사 제이미크론 도금방지막을 이용한 부분 도금 장치 및 부분 도금 방법
US8395084B2 (en) 2005-05-02 2013-03-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and laser irradiation method
WO2014065168A1 (ja) * 2012-10-23 2014-05-01 株式会社日本製鋼所 レーザラインビーム改善装置およびレーザ処理装置
TWI504466B (zh) * 2011-12-20 2015-10-21 Ap Systems Inc 雷射退火裝置
US9296068B2 (en) 2004-03-26 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and laser irradiation apparatus
JP2017079318A (ja) * 2015-10-21 2017-04-27 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． レーザアニーリング装置、及びそれを利用したディスプレイ装置の製造方法
CN115023867A (zh) * 2020-02-19 2022-09-06 元素科学雷射公司 经由均质器运动的可变光束尺寸

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US6555449B1 (en) * 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
JP4663047B2 (ja) * 1998-07-13 2011-03-30 株式会社半導体エネルギー研究所 レーザー照射装置及び半導体装置の作製方法
US6393042B1 (en) * 1999-03-08 2002-05-21 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer and laser irradiation apparatus
US6368945B1 (en) * 2000-03-16 2002-04-09 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification
US6830993B1 (en) * 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
USD444800S1 (en) 2000-09-19 2001-07-10 Richard T. Miller Laser wire stripping apparatus case
US7115503B2 (en) 2000-10-10 2006-10-03 The Trustees Of Columbia University In The City Of New York Method and apparatus for processing thin metal layers
AU2002235144A1 (en) * 2000-11-27 2002-06-03 The Trustees Of Columbia University In The City Of New York Process and mask projection system for laser crystallization processing of semiconductor film regions on a substrate
MY127193A (en) * 2000-12-26 2006-11-30 Semiconductor Energy Lab Laser irradiation apparatus and method of laser irradiation
US6955956B2 (en) * 2000-12-26 2005-10-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4837170B2 (ja) * 2001-01-12 2011-12-14 株式会社Ｉｈｉ レーザアニール方法及び装置
US6770546B2 (en) * 2001-07-30 2004-08-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
CN1330797C (zh) * 2001-08-27 2007-08-08 纽约市哥伦比亚大学托管会 通过对相对于沟道区域的微结构的自觉偏移提高多晶薄膜晶体管器件之间均匀性的方法
SG120880A1 (en) * 2001-08-31 2006-04-26 Semiconductor Energy Lab Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device
US7105048B2 (en) * 2001-11-30 2006-09-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
AU2003220611A1 (en) * 2002-04-01 2003-10-20 The Trustees Of Columbia University In The City Of New York Method and system for providing a thin film
CN100447941C (zh) * 2002-08-19 2008-12-31 纽约市哥伦比亚大学托管会 一种用于处理薄膜样本的方法、系统及其薄膜区域结构
CN100336941C (zh) * 2002-08-19 2007-09-12 纽约市哥伦比亚大学托管会 改进衬底上薄膜区域内诸区及其边缘区内均一性以及这种薄膜区域之结构的激光结晶处理工艺与系统
US7718517B2 (en) * 2002-08-19 2010-05-18 Im James S Single-shot semiconductor processing system and method having various irradiation patterns
CN100459041C (zh) * 2002-08-19 2009-02-04 纽约市哥伦比亚大学托管会 激光结晶处理薄膜样品以最小化边缘区域的方法和系统
KR20040043251A (ko) * 2002-11-18 2004-05-24 차연선 선형레이져 조사장치
US7387922B2 (en) * 2003-01-21 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, method for manufacturing semiconductor device, and laser irradiation system
US7341928B2 (en) * 2003-02-19 2008-03-11 The Trustees Of Columbia University In The City Of New York System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques
US7318866B2 (en) * 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
WO2005029546A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
WO2005029550A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for producing crystalline thin films with a uniform crystalline orientation
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
WO2005029548A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York System and process for providing multiple beam sequential lateral solidification
TWI351713B (en) * 2003-09-16 2011-11-01 Univ Columbia Method and system for providing a single-scan, con
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
WO2005029547A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
US8525075B2 (en) 2004-05-06 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
US8304313B2 (en) * 2004-08-23 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
KR101368570B1 (ko) * 2005-08-16 2014-02-27 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 박막의 고수율 결정화
KR101287314B1 (ko) * 2005-12-05 2013-07-17 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 막 처리 시스템과 방법, 및 박막
WO2007072837A1 (en) * 2005-12-20 2007-06-28 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method for manufacturing semiconductor device
WO2009039482A1 (en) 2007-09-21 2009-03-26 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
WO2009042784A1 (en) 2007-09-25 2009-04-02 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
CN101919058B (zh) 2007-11-21 2014-01-01 纽约市哥伦比亚大学理事会 用于制备外延纹理厚膜的系统和方法
US8569155B2 (en) * 2008-02-29 2013-10-29 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
WO2009108936A1 (en) * 2008-02-29 2009-09-03 The Trustees Of Columbia University In The City Of New York Lithographic method of making uniform crystalline si films
KR101413370B1 (ko) * 2008-02-29 2014-06-30 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 결정질 막 제조 방법, 태양전지 형성 방법 및 이 방법에 의해 제조된 결정질 막 및 태양 전지
US8115137B2 (en) * 2008-06-12 2012-02-14 Ihi Corporation Laser annealing method and laser annealing apparatus
DE102008029622B4 (de) * 2008-06-23 2018-05-09 Ihi Corporation Laserglühverfahren und Laserglühvorrichtung
JP2012508985A (ja) 2008-11-14 2012-04-12 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 薄膜の結晶化のためのシステムおよび方法
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
JP6028849B2 (ja) * 2013-03-07 2016-11-24 三菱電機株式会社 レーザアニール装置、半導体装置の製造方法
US11433486B2 (en) * 2016-11-03 2022-09-06 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus, stack processing apparatus, and laser processing method

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JPH05127077A (ja) 1991-10-31 1993-05-25 Minolta Camera Co Ltd シリンドリカルレンズ系
US5662822A (en) * 1994-10-13 1997-09-02 Hitachi Construction Machinery Co., Ltd. Dam bar cutting apparatus and dam bar cutting method
JPH10209028A (ja) * 1997-01-16 1998-08-07 Nikon Corp 照明光学装置及び半導体素子の製造方法

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004221560A (ja) * 2002-12-25 2004-08-05 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法
US9296068B2 (en) 2004-03-26 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and laser irradiation apparatus
JP2006339630A (ja) * 2005-05-02 2006-12-14 Semiconductor Energy Lab Co Ltd レーザ照射装置、およびレーザ照射方法
US8395084B2 (en) 2005-05-02 2013-03-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and laser irradiation method
CN102513701A (zh) * 2008-01-07 2012-06-27 株式会社Ihi 激光退火方法以及装置
JP2009289871A (ja) * 2008-05-28 2009-12-10 Japan Steel Works Ltd:The レーザ光照射装置
KR101116783B1 (ko) 2009-09-16 2012-03-05 주식회사 제이미크론 레이저를 이용한 부분 도금 장치 및 부분 도금 방법
KR101184430B1 (ko) 2009-09-16 2012-09-20 주식회사 제이미크론 도금방지막을 이용한 부분 도금 장치 및 부분 도금 방법
TWI504466B (zh) * 2011-12-20 2015-10-21 Ap Systems Inc 雷射退火裝置
JP2014086554A (ja) * 2012-10-23 2014-05-12 Japan Steel Works Ltd:The レーザラインビーム改善装置およびレーザ処理装置
KR20150073967A (ko) * 2012-10-23 2015-07-01 가부시끼가이샤 니혼 세이꼬쇼 레이저 라인 빔 개선 장치 및 레이저 처리 장치
WO2014065168A1 (ja) * 2012-10-23 2014-05-01 株式会社日本製鋼所 レーザラインビーム改善装置およびレーザ処理装置
KR102096829B1 (ko) * 2012-10-23 2020-04-03 가부시끼가이샤 니혼 세이꼬쇼 레이저 라인 빔 개선 장치 및 레이저 처리 장치
JP2017079318A (ja) * 2015-10-21 2017-04-27 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． レーザアニーリング装置、及びそれを利用したディスプレイ装置の製造方法
CN115023867A (zh) * 2020-02-19 2022-09-06 元素科学雷射公司 经由均质器运动的可变光束尺寸
JP2023517840A (ja) * 2020-02-19 2023-04-27 エレメンタル・サイエンティフィック・レーザーズ・リミテッド・ライアビリティ・カンパニー ホモジナイザの動きによる可変ビームサイズ
JP7601422B2 (ja) 2020-02-19 2024-12-17 エレメンタル・サイエンティフィック・レーザーズ・リミテッド・ライアビリティ・カンパニー ホモジナイザの動きによる可変ビームサイズ

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