AU2002235144A1 - Process and mask projection system for laser crystallization processing of semiconductor film regions on a substrate - Google Patents
Process and mask projection system for laser crystallization processing of semiconductor film regions on a substrateInfo
- Publication number
- AU2002235144A1 AU2002235144A1 AU2002235144A AU3514402A AU2002235144A1 AU 2002235144 A1 AU2002235144 A1 AU 2002235144A1 AU 2002235144 A AU2002235144 A AU 2002235144A AU 3514402 A AU3514402 A AU 3514402A AU 2002235144 A1 AU2002235144 A1 AU 2002235144A1
- Authority
- AU
- Australia
- Prior art keywords
- substrate
- semiconductor film
- projection system
- laser crystallization
- film regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
- B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
- H01L21/76894—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern using a laser, e.g. laser cutting, laser direct writing, laser repair
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25325600P | 2000-11-27 | 2000-11-27 | |
US60253256 | 2000-11-27 | ||
PCT/US2001/044415 WO2002042847A1 (en) | 2000-11-27 | 2001-11-27 | Process and mask projection system for laser crystallization processing of semiconductor film regions on a substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002235144A1 true AU2002235144A1 (en) | 2002-06-03 |
Family
ID=22959507
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002235144A Abandoned AU2002235144A1 (en) | 2000-11-27 | 2001-11-27 | Process and mask projection system for laser crystallization processing of semiconductor film regions on a substrate |
Country Status (7)
Country | Link |
---|---|
US (1) | US6961117B2 (en) |
JP (1) | JP4583709B2 (en) |
KR (1) | KR100873927B1 (en) |
CN (1) | CN1200320C (en) |
AU (1) | AU2002235144A1 (en) |
TW (1) | TW546684B (en) |
WO (1) | WO2002042847A1 (en) |
Families Citing this family (47)
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US6555449B1 (en) | 1996-05-28 | 2003-04-29 | Trustees Of Columbia University In The City Of New York | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication |
US6830993B1 (en) * | 2000-03-21 | 2004-12-14 | The Trustees Of Columbia University In The City Of New York | Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method |
MXPA02005590A (en) * | 2000-10-10 | 2002-09-30 | Univ Columbia | Method and apparatus for processing thin metal layers. |
AU2002235144A1 (en) | 2000-11-27 | 2002-06-03 | The Trustees Of Columbia University In The City Of New York | Process and mask projection system for laser crystallization processing of semiconductor film regions on a substrate |
KR100400510B1 (en) * | 2000-12-28 | 2003-10-08 | 엘지.필립스 엘시디 주식회사 | A machine for Si crystallization and method of crystallizing Si |
TW556350B (en) * | 2001-08-27 | 2003-10-01 | Univ Columbia | A method to increase device-to-device uniformity for polycrystalline thin-film transistors by deliberately mis-aligning the microstructure relative to the channel region |
AU2003220611A1 (en) * | 2002-04-01 | 2003-10-20 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a thin film |
AU2003258288A1 (en) * | 2002-08-19 | 2004-03-03 | The Trustees Of Columbia University In The City Of New York | Process and system for processing a thin film sample and thin film structure |
CN100459041C (en) | 2002-08-19 | 2009-02-04 | 纽约市哥伦比亚大学托管会 | Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions |
CN100336941C (en) * | 2002-08-19 | 2007-09-12 | 纽约市哥伦比亚大学托管会 | Process and system for laser crystallization processing of film regions on a substrate to provide substantial uniformity within areas in such regions and edge areas thereof, and a structure of such fi |
TWI331803B (en) | 2002-08-19 | 2010-10-11 | Univ Columbia | A single-shot semiconductor processing system and method having various irradiation patterns |
JP2004207691A (en) * | 2002-12-11 | 2004-07-22 | Sharp Corp | Semiconductor thin film manufacturing method and apparatus, semiconductor thin film manufactured by method, and semiconductor element using thin film |
US7341928B2 (en) * | 2003-02-19 | 2008-03-11 | The Trustees Of Columbia University In The City Of New York | System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques |
KR100534579B1 (en) * | 2003-03-05 | 2005-12-07 | 삼성에스디아이 주식회사 | Polysilicon thin film, method of fabricating the same and thin film transistor non-dependancy on active channel direction |
JP2004319989A (en) * | 2003-03-28 | 2004-11-11 | Advanced Lcd Technologies Development Center Co Ltd | Crystallization equipment and crystallizing method |
WO2005029547A2 (en) * | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Enhancing the width of polycrystalline grains with mask |
WO2005029546A2 (en) * | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination |
WO2005029550A2 (en) * | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Method and system for producing crystalline thin films with a uniform crystalline orientation |
TWI351713B (en) | 2003-09-16 | 2011-11-01 | Univ Columbia | Method and system for providing a single-scan, con |
WO2005029548A2 (en) * | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | System and process for providing multiple beam sequential lateral solidification |
US7364952B2 (en) * | 2003-09-16 | 2008-04-29 | The Trustees Of Columbia University In The City Of New York | Systems and methods for processing thin films |
US7164152B2 (en) | 2003-09-16 | 2007-01-16 | The Trustees Of Columbia University In The City Of New York | Laser-irradiated thin films having variable thickness |
TWI359441B (en) | 2003-09-16 | 2012-03-01 | Univ Columbia | Processes and systems for laser crystallization pr |
US7318866B2 (en) | 2003-09-16 | 2008-01-15 | The Trustees Of Columbia University In The City Of New York | Systems and methods for inducing crystallization of thin films using multiple optical paths |
US7311778B2 (en) * | 2003-09-19 | 2007-12-25 | The Trustees Of Columbia University In The City Of New York | Single scan irradiation for crystallization of thin films |
JP4467276B2 (en) * | 2003-10-01 | 2010-05-26 | シャープ株式会社 | Method and apparatus for manufacturing semiconductor thin films |
KR100617035B1 (en) * | 2003-12-26 | 2006-08-30 | 엘지.필립스 엘시디 주식회사 | Device for Crystallization Silicon |
CN100433245C (en) * | 2004-03-11 | 2008-11-12 | 株式会社液晶先端技术开发中心 | Laser crystallization apparatus and laser crystallization method |
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-
2001
- 2001-11-27 AU AU2002235144A patent/AU2002235144A1/en not_active Abandoned
- 2001-11-27 WO PCT/US2001/044415 patent/WO2002042847A1/en active Application Filing
- 2001-11-27 TW TW090129352A patent/TW546684B/en not_active IP Right Cessation
- 2001-11-27 US US10/432,485 patent/US6961117B2/en not_active Expired - Fee Related
- 2001-11-27 CN CNB018192572A patent/CN1200320C/en not_active Expired - Fee Related
- 2001-11-27 JP JP2002545311A patent/JP4583709B2/en not_active Expired - Fee Related
- 2001-11-27 KR KR1020037007042A patent/KR100873927B1/en not_active IP Right Cessation
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CN1476552A (en) | 2004-02-18 |
TW546684B (en) | 2003-08-11 |
US6961117B2 (en) | 2005-11-01 |
KR20040048372A (en) | 2004-06-09 |
US20040061843A1 (en) | 2004-04-01 |
JP2004533709A (en) | 2004-11-04 |
JP4583709B2 (en) | 2010-11-17 |
KR100873927B1 (en) | 2008-12-12 |
WO2002042847A1 (en) | 2002-05-30 |
CN1200320C (en) | 2005-05-04 |
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