JP2009049143A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2009049143A5 JP2009049143A5 JP2007213081A JP2007213081A JP2009049143A5 JP 2009049143 A5 JP2009049143 A5 JP 2009049143A5 JP 2007213081 A JP2007213081 A JP 2007213081A JP 2007213081 A JP2007213081 A JP 2007213081A JP 2009049143 A5 JP2009049143 A5 JP 2009049143A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- light intensity
- laser beam
- semiconductor region
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007213081A JP5307994B2 (ja) | 2007-08-17 | 2007-08-17 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007213081A JP5307994B2 (ja) | 2007-08-17 | 2007-08-17 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009049143A JP2009049143A (ja) | 2009-03-05 |
| JP2009049143A5 true JP2009049143A5 (enExample) | 2010-09-09 |
| JP5307994B2 JP5307994B2 (ja) | 2013-10-02 |
Family
ID=40501105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007213081A Expired - Fee Related JP5307994B2 (ja) | 2007-08-17 | 2007-08-17 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5307994B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011007677A1 (en) * | 2009-07-17 | 2011-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN102473733B (zh) | 2009-07-18 | 2015-09-30 | 株式会社半导体能源研究所 | 半导体装置以及制造半导体装置的方法 |
| US8823002B2 (en) * | 2009-11-19 | 2014-09-02 | Sharp Kabushiki Kaisha | Method for manufacturing semiconductor device, semiconductor device, and display device |
| US8476744B2 (en) * | 2009-12-28 | 2013-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with channel including microcrystalline and amorphous semiconductor regions |
| JP5694673B2 (ja) * | 2010-02-26 | 2015-04-01 | 株式会社ジャパンディスプレイ | 表示装置およびその製造方法 |
| WO2025013673A1 (ja) * | 2023-07-07 | 2025-01-16 | 大熊ダイヤモンドデバイス株式会社 | Ｆｅｔ、電気機械器具、及び、ｆｅｔの製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3156776B2 (ja) * | 1998-08-03 | 2001-04-16 | 日本電気株式会社 | レーザ照射方法 |
| JP3252811B2 (ja) * | 1998-11-05 | 2002-02-04 | 日本電気株式会社 | 半導体薄膜の製造方法 |
| JP2005045209A (ja) * | 2003-07-09 | 2005-02-17 | Mitsubishi Electric Corp | レーザアニール方法 |
| JP4577114B2 (ja) * | 2005-06-23 | 2010-11-10 | ソニー株式会社 | 薄膜トランジスタの製造方法および表示装置の製造方法 |
-
2007
- 2007-08-17 JP JP2007213081A patent/JP5307994B2/ja not_active Expired - Fee Related