JP2008085312A5 - - Google Patents

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Publication number
JP2008085312A5
JP2008085312A5 JP2007215514A JP2007215514A JP2008085312A5 JP 2008085312 A5 JP2008085312 A5 JP 2008085312A5 JP 2007215514 A JP2007215514 A JP 2007215514A JP 2007215514 A JP2007215514 A JP 2007215514A JP 2008085312 A5 JP2008085312 A5 JP 2008085312A5
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JP
Japan
Prior art keywords
semiconductor film
forming
substrate
laser beam
semiconductor
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Application number
JP2007215514A
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English (en)
Japanese (ja)
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JP2008085312A (ja
JP5216276B2 (ja
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Priority to JP2007215514A priority Critical patent/JP5216276B2/ja
Priority claimed from JP2007215514A external-priority patent/JP5216276B2/ja
Publication of JP2008085312A publication Critical patent/JP2008085312A/ja
Publication of JP2008085312A5 publication Critical patent/JP2008085312A5/ja
Application granted granted Critical
Publication of JP5216276B2 publication Critical patent/JP5216276B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2007215514A 2006-08-30 2007-08-22 半導体装置の作製方法 Expired - Fee Related JP5216276B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007215514A JP5216276B2 (ja) 2006-08-30 2007-08-22 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006233046 2006-08-30
JP2006233046 2006-08-30
JP2007215514A JP5216276B2 (ja) 2006-08-30 2007-08-22 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013041451A Division JP5628949B2 (ja) 2006-08-30 2013-03-04 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2008085312A JP2008085312A (ja) 2008-04-10
JP2008085312A5 true JP2008085312A5 (enExample) 2010-09-30
JP5216276B2 JP5216276B2 (ja) 2013-06-19

Family

ID=39355782

Family Applications (1)

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JP2007215514A Expired - Fee Related JP5216276B2 (ja) 2006-08-30 2007-08-22 半導体装置の作製方法

Country Status (1)

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JP (1) JP5216276B2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6580475B2 (en) * 2000-04-27 2003-06-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
CN102150191B (zh) * 2008-09-12 2013-07-24 株式会社半导体能源研究所 显示装置
KR101636755B1 (ko) 2008-09-19 2016-07-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
EP2172804B1 (en) * 2008-10-03 2016-05-11 Semiconductor Energy Laboratory Co, Ltd. Display device
EP2256814B1 (en) 2009-05-29 2019-01-16 Semiconductor Energy Laboratory Co, Ltd. Oxide semiconductor device and method for manufacturing the same
SG10201403913PA (en) * 2009-07-10 2014-10-30 Semiconductor Energy Lab Method for manufacturing semiconductor device
KR101851926B1 (ko) * 2009-09-04 2018-04-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
WO2011027656A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
CN113903796B (zh) * 2009-10-16 2026-04-07 株式会社半导体能源研究所 逻辑电路和半导体器件
EP2504855A4 (en) * 2009-11-28 2016-07-20 Semiconductor Energy Lab STACKED OXIDE MATERIAL, SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
KR101866734B1 (ko) 2009-12-25 2018-06-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011104938A1 (ja) * 2010-02-23 2011-09-01 シャープ株式会社 回路基板の製造方法、回路基板及び表示装置
US9190522B2 (en) * 2010-04-02 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor
WO2011145633A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5948025B2 (ja) 2010-08-06 2016-07-06 株式会社半導体エネルギー研究所 液晶表示装置
US9960278B2 (en) * 2011-04-06 2018-05-01 Yuhei Sato Manufacturing method of semiconductor device
JP6127296B2 (ja) * 2015-06-24 2017-05-17 株式会社ジャパンディスプレイ 表示装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH063544A (ja) * 1992-06-23 1994-01-14 Japan Steel Works Ltd:The 光導波路の製造方法
JPH11163356A (ja) * 1997-11-28 1999-06-18 Hitachi Ltd 薄膜トランジスタおよびその製造方法
JP2001168061A (ja) * 1999-09-27 2001-06-22 Toshiba Corp レーザ照射により半導体基板上に成膜を形成するためのターゲット及びその製造方法
JP4510342B2 (ja) * 2001-09-10 2010-07-21 シャープ株式会社 酸化物絶縁体材料およびその形成方法並びに半導体素子
US7339187B2 (en) * 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
EP1606120A1 (en) * 2003-03-27 2005-12-21 E.I. Dupont De Nemours And Company Processes and donor elements for transferring thermally sensitive materials to substrates
US20070178710A1 (en) * 2003-08-18 2007-08-02 3M Innovative Properties Company Method for sealing thin film transistors
JP2005268196A (ja) * 2004-03-21 2005-09-29 Japan Fine Ceramics Center 酸化亜鉛多結晶膜及びこれを用いた機能素子

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