JP2003133365A5 - - Google Patents

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Publication number
JP2003133365A5
JP2003133365A5 JP2001331137A JP2001331137A JP2003133365A5 JP 2003133365 A5 JP2003133365 A5 JP 2003133365A5 JP 2001331137 A JP2001331137 A JP 2001331137A JP 2001331137 A JP2001331137 A JP 2001331137A JP 2003133365 A5 JP2003133365 A5 JP 2003133365A5
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JP
Japan
Prior art keywords
circuit
power supply
power
voltage drop
activation signal
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JP2001331137A
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English (en)
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JP3803050B2 (ja
JP2003133365A (ja
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Priority claimed from JP2001331137A external-priority patent/JP3803050B2/ja
Priority to JP2001331137A priority Critical patent/JP3803050B2/ja
Priority to US10/143,931 priority patent/US6625050B2/en
Priority to TW091113743A priority patent/TW559828B/zh
Priority to DE10228544A priority patent/DE10228544A1/de
Priority to CNB021251479A priority patent/CN1251239C/zh
Priority to KR10-2002-0036823A priority patent/KR100485547B1/ko
Publication of JP2003133365A publication Critical patent/JP2003133365A/ja
Publication of JP2003133365A5 publication Critical patent/JP2003133365A5/ja
Publication of JP3803050B2 publication Critical patent/JP3803050B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

好ましくは、半導体記憶装置は、外部電源投入後、内部電源電位が所定の電位になるまで活性化信号を発生するパワーオン回路をさらに備え、パワーオン回路は、少なくとも１つ備えられた第２の電圧降下回路の少なくとも１つに接続され、パワーオン回路が接続された第２の電圧降下回路は、パワーオン回路から受ける活性化信号に応じて、外部電源ノードから内部電源ノードへ供給する電流量を増加させる。

Claims (1)

  1. 外部電源投入後、前記内部電源電位が所定の電位になるまで活性化信号を発生するパワーオン回路をさらに備え、
    前記パワーオン回路は、少なくとも１つ備えられた前記第２の電圧降下回路の少なくとも１つに接続され、
    前記パワーオン回路が接続された第２の電圧降下回路は、前記パワーオン回路から受ける前記活性化信号に応じて、前記外部電源ノードから前記内部電源ノードへ供給する電流量を増加させる、請求項６に記載の半導体記憶装置。
JP2001331137A 2001-10-29 2001-10-29 半導体記憶装置、ダイナミックランダムアクセスメモリおよび半導体装置 Expired - Fee Related JP3803050B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2001331137A JP3803050B2 (ja) 2001-10-29 2001-10-29 半導体記憶装置、ダイナミックランダムアクセスメモリおよび半導体装置
US10/143,931 US6625050B2 (en) 2001-10-29 2002-05-14 Semiconductor memory device adaptable to various types of packages
TW091113743A TW559828B (en) 2001-10-29 2002-06-24 Semiconductor memory device
DE10228544A DE10228544A1 (de) 2001-10-29 2002-06-26 Halbleiterspeichervorrichtung
CNB021251479A CN1251239C (zh) 2001-10-29 2002-06-28 能适应多种封装形式的半导体存储装置
KR10-2002-0036823A KR100485547B1 (ko) 2001-10-29 2002-06-28 다양한 패키지에 대응할 수 있는 반도체 기억 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001331137A JP3803050B2 (ja) 2001-10-29 2001-10-29 半導体記憶装置、ダイナミックランダムアクセスメモリおよび半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005307491A Division JP2006140466A (ja) 2005-10-21 2005-10-21 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2003133365A JP2003133365A (ja) 2003-05-09
JP2003133365A5 true JP2003133365A5 (ja) 2005-06-09
JP3803050B2 JP3803050B2 (ja) 2006-08-02

Family

ID=19146759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001331137A Expired - Fee Related JP3803050B2 (ja) 2001-10-29 2001-10-29 半導体記憶装置、ダイナミックランダムアクセスメモリおよび半導体装置

Country Status (6)

Country Link
US (1) US6625050B2 (ja)
JP (1) JP3803050B2 (ja)
KR (1) KR100485547B1 (ja)
CN (1) CN1251239C (ja)
DE (1) DE10228544A1 (ja)
TW (1) TW559828B (ja)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040232982A1 (en) * 2002-07-19 2004-11-25 Ikuroh Ichitsubo RF front-end module for wireless communication devices
US6774718B2 (en) * 2002-07-19 2004-08-10 Micro Mobio Inc. Power amplifier module for wireless communication devices
US7493094B2 (en) * 2005-01-19 2009-02-17 Micro Mobio Corporation Multi-mode power amplifier module for wireless communication devices
US7071783B2 (en) * 2002-07-19 2006-07-04 Micro Mobio Corporation Temperature-compensated power sensing circuit for power amplifiers
US6975527B1 (en) * 2002-11-12 2005-12-13 Integrated Device Technology, Inc. Memory device layout
DE10313868B4 (de) * 2003-03-21 2009-11-19 Siemens Ag Katheter zur magnetischen Navigation
KR100626367B1 (ko) * 2003-10-02 2006-09-20 삼성전자주식회사 내부전압 발생장치
US20100253435A1 (en) * 2004-03-18 2010-10-07 Ikuroh Ichitsubo Rf power amplifier circuit utilizing bondwires in impedance matching
US20050205986A1 (en) * 2004-03-18 2005-09-22 Ikuroh Ichitsubo Module with integrated active substrate and passive substrate
US7254371B2 (en) * 2004-08-16 2007-08-07 Micro-Mobio, Inc. Multi-port multi-band RF switch
US7389090B1 (en) 2004-10-25 2008-06-17 Micro Mobio, Inc. Diplexer circuit for wireless communication devices
US7262677B2 (en) * 2004-10-25 2007-08-28 Micro-Mobio, Inc. Frequency filtering circuit for wireless communication devices
US7221225B2 (en) 2004-12-03 2007-05-22 Micro-Mobio Dual band power amplifier module for wireless communication devices
US7548111B2 (en) * 2005-01-19 2009-06-16 Micro Mobio Corporation Miniature dual band power amplifier with reserved pins
US7769355B2 (en) * 2005-01-19 2010-08-03 Micro Mobio Corporation System-in-package wireless communication device comprising prepackaged power amplifier
US7580687B2 (en) 2005-01-19 2009-08-25 Micro Mobio Corporation System-in-package wireless communication device comprising prepackaged power amplifier
US7348842B2 (en) * 2005-01-19 2008-03-25 Micro-Mobio Multi-substrate RF module for wireless communication devices
US7084702B1 (en) * 2005-01-19 2006-08-01 Micro Mobio Corp. Multi-band power amplifier module for wireless communication devices
US7119614B2 (en) * 2005-01-19 2006-10-10 Micro-Mobio Multi-band power amplifier module for wireless communications
US20070063982A1 (en) * 2005-09-19 2007-03-22 Tran Bao Q Integrated rendering of sound and image on a display
KR100681398B1 (ko) * 2005-12-29 2007-02-15 삼성전자주식회사 열방출형 반도체 칩과 테이프 배선기판 및 그를 이용한테이프 패키지
US7477204B2 (en) * 2005-12-30 2009-01-13 Micro-Mobio, Inc. Printed circuit board based smart antenna
US7477108B2 (en) * 2006-07-14 2009-01-13 Micro Mobio, Inc. Thermally distributed integrated power amplifier module
JP2008060215A (ja) * 2006-08-30 2008-03-13 Elpida Memory Inc 半導体装置
JP2008299925A (ja) * 2007-05-30 2008-12-11 Elpida Memory Inc 半導体メモリ
US7741904B2 (en) * 2008-01-14 2010-06-22 Micro Mobio Corporation Efficient integrated linear amplifier module
US11036262B1 (en) 2008-01-14 2021-06-15 Micro Mobio Corporation Radio frequency power amplifier with adjacent channel leakage correction circuit
US9088258B2 (en) * 2008-01-14 2015-07-21 Micro Mobio Corporation RF power amplifier with linearity control
US20090257208A1 (en) * 2008-04-10 2009-10-15 Zlatko Filipovic Compact packaging for power amplifier module
KR101003116B1 (ko) 2008-08-08 2010-12-21 주식회사 하이닉스반도체 패드를 제어하는 반도체 메모리 장치 및 그 장치가 장착된 멀티칩 패키지
US8253496B2 (en) * 2008-10-31 2012-08-28 Micro Mobio Corporation Linear RF power amplifier with frequency-selectable impedance matching
US7808312B2 (en) * 2008-10-31 2010-10-05 Micro Mobio Corporation Broadband RF linear amplifier
KR20100091640A (ko) * 2009-02-11 2010-08-19 삼성전자주식회사 메모리 장치, 이를 포함하는 메모리 시스템, 및 이들의 데이터 처리 방법
US8219145B2 (en) * 2009-09-03 2012-07-10 Micro Mobio Corporation Universal radio card for wireless devices
JP2011060909A (ja) * 2009-09-08 2011-03-24 Elpida Memory Inc 半導体記憶装置
US8189713B2 (en) * 2010-01-18 2012-05-29 Micro Mobio Corporation Matrix power amplifiers for high speed wireless applications
US10938360B1 (en) 2011-10-26 2021-03-02 Micro Mobio Corporation Multimode multiband wireless device with broadband power amplifier
KR102043369B1 (ko) * 2012-11-21 2019-11-11 삼성전자주식회사 반도체 메모리 칩 및 이를 포함하는 적층형 반도체 패키지
KR20150026644A (ko) * 2013-09-03 2015-03-11 에스케이하이닉스 주식회사 반도체칩, 반도체칩 패키지 및 이를 포함하는 반도체시스템
TWI539565B (zh) * 2014-01-29 2016-06-21 森富科技股份有限公司 記憶體與記憶體球位焊墊之佈局方法
US11515617B1 (en) 2019-04-03 2022-11-29 Micro Mobio Corporation Radio frequency active antenna system in a package

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3009109B2 (ja) 1989-11-07 2000-02-14 富士通株式会社 半導体集積回路
JPH04164340A (ja) * 1990-10-29 1992-06-10 Nec Corp 半導体集積回路
JPH06302644A (ja) * 1993-04-15 1994-10-28 Hitachi Ltd 半導体装置
JP3349777B2 (ja) 1993-07-30 2002-11-25 三菱電機株式会社 半導体記憶装置
JP3239581B2 (ja) 1994-01-26 2001-12-17 富士通株式会社 半導体集積回路の製造方法及び半導体集積回路
JP3494502B2 (ja) * 1995-05-12 2004-02-09 株式会社ルネサステクノロジ 半導体記憶装置およびそのパッド配置方法
KR0164795B1 (ko) * 1995-10-31 1999-02-01 김광호 반도체 장치의 패드 배치구조
KR100238238B1 (ko) 1997-03-31 2000-01-15 윤종용 반도체 메모리장치의 내부 전압 제어회로 및 그 제어방법
KR19990010762A (ko) * 1997-07-18 1999-02-18 윤종용 반도체 소자 패키지
KR100340060B1 (ko) * 1998-06-02 2002-07-18 박종섭 티에스오피와호환성이있는씨에스피핀배치방법및그에의한핀배치구조
GB2348317B (en) * 1998-06-23 2001-03-07 Samsung Electronics Co Ltd An arrangement of data input/output circuits for use in a semiconductor memory device
JP4446505B2 (ja) 1999-01-19 2010-04-07 株式会社ルネサステクノロジ 半導体集積回路装置
JP5041631B2 (ja) * 2001-06-15 2012-10-03 ルネサスエレクトロニクス株式会社 半導体記憶装置

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