JP2001144276A5 - - Google Patents

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Publication number
JP2001144276A5
JP2001144276A5 JP2000252881A JP2000252881A JP2001144276A5 JP 2001144276 A5 JP2001144276 A5 JP 2001144276A5 JP 2000252881 A JP2000252881 A JP 2000252881A JP 2000252881 A JP2000252881 A JP 2000252881A JP 2001144276 A5 JP2001144276 A5 JP 2001144276A5
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JP
Japan
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JP2000252881A
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JP2001144276A (ja
JP4074051B2 (ja
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Priority claimed from JP2000252881A external-priority patent/JP4074051B2/ja
Priority to JP2000252881A priority Critical patent/JP4074051B2/ja
Application filed filed Critical
Priority to US09/650,748 priority patent/US7019364B1/en
Priority to CNB001338560A priority patent/CN1156888C/zh
Priority to KR10-2000-0051092A priority patent/KR100392042B1/ko
Publication of JP2001144276A publication Critical patent/JP2001144276A/ja
Priority to US11/340,594 priority patent/US7235456B2/en
Publication of JP2001144276A5 publication Critical patent/JP2001144276A5/ja
Priority to US11/812,490 priority patent/US7507634B2/en
Publication of JP4074051B2 publication Critical patent/JP4074051B2/ja
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Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000252881A 1999-08-31 2000-08-23 半導体基板およびその製造方法 Expired - Fee Related JP4074051B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000252881A JP4074051B2 (ja) 1999-08-31 2000-08-23 半導体基板およびその製造方法
US09/650,748 US7019364B1 (en) 1999-08-31 2000-08-30 Semiconductor substrate having pillars within a closed empty space
CNB001338560A CN1156888C (zh) 1999-08-31 2000-08-31 半导体衬底及其制造方法
KR10-2000-0051092A KR100392042B1 (ko) 1999-08-31 2000-08-31 반도체 기판 및 그 제조 방법
US11/340,594 US7235456B2 (en) 1999-08-31 2006-01-27 Method of making empty space in silicon
US11/812,490 US7507634B2 (en) 1999-08-31 2007-06-19 Method for fabricating a localize SOI in bulk silicon substrate including changing first trenches formed in the substrate into unclosed empty space by applying heat treatment

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP24658299 1999-08-31
JP11-246582 1999-08-31
JP2000252881A JP4074051B2 (ja) 1999-08-31 2000-08-23 半導体基板およびその製造方法

Related Child Applications (2)

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JP2007102111A Division JP2007266613A (ja) 1999-08-31 2007-04-09 半導体基板および半導体装置
JP2007102112A Division JP4823128B2 (ja) 1999-08-31 2007-04-09 半導体基板の製造方法

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JP2001144276A JP2001144276A (ja) 2001-05-25
JP2001144276A5 true JP2001144276A5 (ja) 2006-05-25
JP4074051B2 JP4074051B2 (ja) 2008-04-09

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JP2000252881A Expired - Fee Related JP4074051B2 (ja) 1999-08-31 2000-08-23 半導体基板およびその製造方法

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US (3) US7019364B1 (ja)
JP (1) JP4074051B2 (ja)
KR (1) KR100392042B1 (ja)
CN (1) CN1156888C (ja)

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