JP4977181B2 - 固体撮像装置およびその製造方法 - Google Patents
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- JP4977181B2 JP4977181B2 JP2009186040A JP2009186040A JP4977181B2 JP 4977181 B2 JP4977181 B2 JP 4977181B2 JP 2009186040 A JP2009186040 A JP 2009186040A JP 2009186040 A JP2009186040 A JP 2009186040A JP 4977181 B2 JP4977181 B2 JP 4977181B2
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- 239000004065 semiconductor Substances 0.000 claims description 138
- 238000002955 isolation Methods 0.000 claims description 106
- 238000003860 storage Methods 0.000 claims description 47
- 238000005468 ion implantation Methods 0.000 claims description 30
- 239000012535 impurity Substances 0.000 claims description 17
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
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- 238000001020 plasma etching Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
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- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910020328 SiSn Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
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- 230000004888 barrier function Effects 0.000 description 1
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- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- 229910052949 galena Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
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- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
Description
また、本願発明の一態様によれば、第1導電型の半導体層と、前記第1導電型の半導体層上に設けられた第2導電型の半導体層と、前記第2導電型の半導体層中に形成された受光素子と、前記受光素子を前記第2導電型の半導体層の面内方向において取り囲むように形成された素子分離領域とを備え、前記素子分離領域は、前記第1導電型の半導体層に接続された第1導電型の第1の素子分離部と、前記第1の素子分離部上に形成された空洞と、前記空洞上に形成された第1導電型の第2の素子分離部とを有し、前記第1の素子分離部は、前記第2導電型の半導体層の表層側の素子分離幅が前記第1導電型の半導体層側の素子分離幅よりも大きいこと、を特徴とする固体撮像装置が提供される。
Claims (8)
- 第1導電型の半導体層と、
前記第1導電型の半導体層上に設けられた第2導電型の半導体層と、
前記第2導電型の半導体層中に形成された受光素子と、
前記受光素子を前記第2導電型の半導体層の面内方向において取り囲むように形成された素子分離領域とを備え、
前記素子分離領域は、前記第1導電型の半導体層に接続された第1導電型の第1の素子分離部と、前記第1の素子分離部上に形成された空洞と、前記空洞上に形成された第1導電型の第2の素子分離部とを有し、
前記第1の素子分離部は、前記第2導電型の半導体層の表層側の不純物濃度が前記第1導電型の半導体層側の不純物濃度よりも高いこと、
を特徴とする固体撮像装置。 - 第1導電型の半導体層と、
前記第1導電型の半導体層上に設けられた第2導電型の半導体層と、
前記第2導電型の半導体層中に形成された受光素子と、
前記受光素子を前記第2導電型の半導体層の面内方向において取り囲むように形成された素子分離領域とを備え、
前記素子分離領域は、前記第1導電型の半導体層に接続された第1導電型の第1の素子分離部と、前記第1の素子分離部上に形成された空洞と、前記空洞上に形成された第1導電型の第2の素子分離部とを有し、
前記第1の素子分離部は、前記第2導電型の半導体層の表層側の素子分離幅が前記第1導電型の半導体層側の素子分離幅よりも大きいこと、
を特徴とする固体撮像装置。 - 前記受光素子は電荷蓄積層を有しており、前記空洞の底部の深さ位置は前記電荷蓄積層の下端部の深さよりも同等以上の深い位置であること、
を特徴とする請求項1または2に記載の固体撮像装置。 - 前記第2導電型の半導体層の表面からの前記空洞の底部の深さが、青色光の波長よりも深く緑色光の波長よりも浅いこと、
を特徴とする請求項1〜3のいずれか1つに記載の固体撮像装置。 - 前記第2導電型の半導体層の表面からの前記空洞の底部の深さが、320nm〜790nmであること、
を特徴とする請求項1〜3のいずれか1つに記載の固体撮像装置。 - 第1導電型の半導体層上に第2導電型の半導体層を形成する工程と、
前記第2導電型の半導体層の所定の領域を前記第2導電型の半導体層の面内方向において取り囲むように開口を形成する工程と、
前記第2導電型の半導体層に非酸化性雰囲気中で熱処理を施すことにより前記開口を封止して空洞を形成する工程と、
前記空洞に対応する領域が開口されたパターンを前記第2導電型の半導体層上に形成する工程と
前記パターンをマスクとして前記第2導電型の半導体層に第1導電型イオンをイオン注入して素子分離部を形成する工程と、
前記第2導電型の半導体層の面内方向において前記素子分離部及び前記空洞に取り囲まれた前記第2導電型の半導体層に受光素子を形成する工程と、
を備えることを特徴とする固体撮像装置の製造方法。 - 素子分離部の形成工程は、前記空洞の下部の前記第2導電型の半導体層中にイオンの注入深さを変えて第1導電型イオンの注入を複数回行うことを特徴とする請求項6に記載の固体撮像装置の製造方法。
- 前記開口の深さが、320nm〜790nmであること、
を特徴とする請求項6に記載の固体撮像装置の製造方法。
Priority Applications (2)
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JP2009186040A JP4977181B2 (ja) | 2009-08-10 | 2009-08-10 | 固体撮像装置およびその製造方法 |
US12/722,716 US20110031576A1 (en) | 2009-08-10 | 2010-03-12 | Solid-state imaging device and manufacturing method thereof |
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JP2009186040A JP4977181B2 (ja) | 2009-08-10 | 2009-08-10 | 固体撮像装置およびその製造方法 |
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JP2011040543A JP2011040543A (ja) | 2011-02-24 |
JP4977181B2 true JP4977181B2 (ja) | 2012-07-18 |
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JP (1) | JP4977181B2 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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US8951826B2 (en) * | 2012-01-31 | 2015-02-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for increasing photodiode full well capacity |
JP2014093482A (ja) | 2012-11-06 | 2014-05-19 | Toshiba Corp | 固体撮像装置の製造方法および固体撮像装置 |
JP6278608B2 (ja) | 2013-04-08 | 2018-02-14 | キヤノン株式会社 | 半導体装置およびその製造方法 |
JP2015056622A (ja) * | 2013-09-13 | 2015-03-23 | 株式会社リコー | 半導体装置 |
US9647022B2 (en) * | 2015-02-12 | 2017-05-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-layer structure for high aspect ratio etch |
JP2017045873A (ja) * | 2015-08-27 | 2017-03-02 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
US10433168B2 (en) * | 2015-12-22 | 2019-10-01 | Quanta Computer Inc. | Method and system for combination wireless and smartcard authorization |
US9780250B2 (en) * | 2016-01-14 | 2017-10-03 | Varian Semiconductor Equipment Associates, Inc. | Self-aligned mask for ion implantation |
JP6688165B2 (ja) | 2016-06-10 | 2020-04-28 | キヤノン株式会社 | 撮像装置及び撮像システム |
JP7013119B2 (ja) | 2016-07-21 | 2022-01-31 | キヤノン株式会社 | 固体撮像素子、固体撮像素子の製造方法、及び撮像システム |
CN108539016B (zh) | 2018-03-29 | 2022-01-25 | 京东方科技集团股份有限公司 | 柔性衬底及其制备方法、显示面板的制备方法和显示装置 |
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JPS5197988A (en) * | 1975-02-25 | 1976-08-28 | Handotaisochino seizohoho | |
JP4074051B2 (ja) * | 1999-08-31 | 2008-04-09 | 株式会社東芝 | 半導体基板およびその製造方法 |
US7091536B2 (en) * | 2002-11-14 | 2006-08-15 | Micron Technology, Inc. | Isolation process and structure for CMOS imagers |
JP2004228407A (ja) * | 2003-01-24 | 2004-08-12 | Sony Corp | 固体撮像素子および固体撮像素子の製造方法 |
JP4718875B2 (ja) * | 2005-03-31 | 2011-07-06 | 株式会社東芝 | 固体撮像素子 |
KR100688547B1 (ko) * | 2005-05-18 | 2007-03-02 | 삼성전자주식회사 | Sti 구조를 가지는 반도체 소자 및 그 제조 방법 |
US7800146B2 (en) * | 2005-08-26 | 2010-09-21 | Aptina Imaging Corporation | Implanted isolation region for imager pixels |
JP2007227761A (ja) * | 2006-02-24 | 2007-09-06 | Matsushita Electric Ind Co Ltd | 固体撮像装置用素子 |
JP2008078302A (ja) * | 2006-09-20 | 2008-04-03 | Canon Inc | 撮像装置および撮像システム |
JP2008084962A (ja) * | 2006-09-26 | 2008-04-10 | Toshiba Corp | 固体撮像装置及びその製造方法 |
JP4960058B2 (ja) * | 2006-10-04 | 2012-06-27 | 株式会社東芝 | 増幅型固体撮像素子 |
KR100843965B1 (ko) * | 2007-03-19 | 2008-07-03 | 동부일렉트로닉스 주식회사 | 이미지센서 및 그 제조방법 |
US7800192B2 (en) * | 2008-02-08 | 2010-09-21 | Omnivision Technologies, Inc. | Backside illuminated image sensor having deep light reflective trenches |
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2009
- 2009-08-10 JP JP2009186040A patent/JP4977181B2/ja not_active Expired - Fee Related
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2010
- 2010-03-12 US US12/722,716 patent/US20110031576A1/en not_active Abandoned
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JP2011040543A (ja) | 2011-02-24 |
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