JP5318955B2 - 空隙を有する浅型トレンチ分離構造と、これを使用するcmos画像センサと、cmos画像センサの製造方法 - Google Patents
空隙を有する浅型トレンチ分離構造と、これを使用するcmos画像センサと、cmos画像センサの製造方法 Download PDFInfo
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
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- H01L27/144—Devices controlled by radiation
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Description
Claims (22)
- 基板の非活性領域に形成されたトレンチと、
前記トレンチに形成された内壁酸化層と、
前記内壁酸化層上に形成されたライナーと、
前記ライナー上に形成され、かつ前記トレンチを充填するように構成された酸化層と、
前記トレンチの内壁と前記ライナー間に、前記トレンチの前記内壁に接するように形成された空隙であって、前記空隙は前記内壁酸化層を部分的に除去して形成される、トレンチと、
前記空隙を封止するように構成された緩衝層と、
を備える浅型トレンチ分離構造。 - 前記空隙が、前記トレンチの一方の側面に沿って形成される、請求項1に記載の浅型トレンチ分離構造。
- 前記空隙が、前記トレンチの2つの側面に沿って形成される、請求項1に記載の浅型トレンチ分離構造。
- 前記空隙が、前記トレンチの一方の側面および底面に沿って形成される、請求項1に記載の浅型トレンチ分離構造。
- 前記緩衝層が、SiO2、SiON、Si3N4または多結晶シリコンのうちの1つを備える、請求項1に記載の浅型トレンチ分離構造。
- 基板にトレンチを形成する工程と、
前記トレンチの表面上に内壁酸化層を形成する工程と、
前記内壁酸化層上にライナーを形成する工程と、
前記ライナー上に形成された酸化層で前記トレンチを充填する工程と、
前記トレンチの前記表面と前記ライナー間に、前記トレンチの前記表面に接するように空隙を形成する工程と、
前記空隙をカバーするための緩衝層を形成する工程と、
を備え、
空隙を形成する前記工程が、
前記内壁酸化層を選択的に露出するエッチングマスクを形成する工程と、
前記露出された内壁酸化層をエッチングすることによって、前記トレンチの前記表面から前記内壁酸化層の少なくとも一部を除去する工程と、
を備える方法。 - エッチングマスクを形成する前記工程が、前記トレンチの一方の側面に沿って前記内壁酸化層を露出させる工程を備える、請求項6に記載の方法。
- エッチングマスクを形成する前記工程が、前記トレンチの2つの側面に沿って前記内壁酸化層を露出させる工程を備える、請求項6に記載の方法。
- 前記除去工程が、前記トレンチの一方の側面に沿って前記内壁酸化層の一部をエッチングして、前記トレンチの前記側面の少なくとも一部に沿って前記空隙を形成する工程を備える、請求項6に記載の方法。
- 前記除去工程が、前記トレンチの一方の側面に沿って前記内壁酸化層をエッチングして、前記トレンチの前記側面の表面全体に沿って前記空隙を形成する工程を備える、請求項6に記載の方法。
- 前記除去工程が、一方の側面に沿って前記内壁酸化層をエッチングして、前記トレンチの前記一方の側面および底面の少なくとも一部に沿って前記空隙を形成する工程を備える、請求項6に記載の方法。
- 前記除去工程が、前記内壁酸化層に対しては比較的高く、シリコンに対しては比較的低いエッチング速度を有するエッチャントを使用する工程を備える、請求項6に記載の方法。
- ライナーを形成する前記工程が、前記エッチング工程が前記ライナーを除去するのを防止するのに十分な厚さで前記ライナーを形成する工程を備える、請求項6に記載の方法。
- 緩衝層を形成する前記工程が、サリサイドプロセスにおいて金属イオンの拡散を抑制することができる材料を前記緩衝層に使用する工程を備える、請求項6に記載の方法。
- 前記緩衝層が、SiO2、SiON、Si3N4または多結晶シリコンのうちの1つを備える、請求項14に記載の方法。
- 前記基板上にゲートパターンを形成する工程と、
前記基板に、フォトダイオード用のn型イオン注入領域を形成する工程と、
前記ゲートパターンの両側壁にスペーサを形成する工程と、
前記基板にフローティング拡散領域を形成する工程と、
前記基板に、前記フォトダイオード用のp型イオン注入領域を形成する工程と、
をさらに備える、請求項6に記載の方法。 - 基板に形成されたフォトダイオードと、
前記基板に形成されたフローティング拡散領域と、
前記フォトダイオードと前記フローティング拡散領域間で前記基板に形成されたゲート構造と、
前記基板に形成されたトレンチであって、前記トレンチが前記フォトダイオードと隣接フォトダイオード間に位置する空隙を含む、トレンチであって、前記トレンチが、前記トレンチの内面に形成された内壁酸化層と、前記内壁酸化層上に形成されたライナーと、前記ライナー上に形成され、かつ前記トレンチを充填するように構成された酸化層とを備え、前記空隙は前記トレンチの前記内面と前記ライナー間に、前記内面に接するように位置し、前記空隙は前記内壁酸化層を部分的に除去して形成される、トレンチと、
を備える画像センサ。 - 前記空隙が、前記トレンチの一方の側面に沿って位置する、請求項17に記載の画像センサ。
- 前記空隙が、前記トレンチの2つの側面に沿って位置する、請求項17に記載の画像センサ。
- 前記空隙が、前記トレンチの一方の側面および底面に沿って位置する、請求項17に記載の画像センサ。
- 前記空隙が、前記トレンチの側面全体に沿って延びる、請求項17に記載の画像センサ。
- 前記空隙が、前記トレンチの一方の側面の一部に沿って延びる、請求項17に記載の画像センサ。
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KR1020080083736A KR20100025107A (ko) | 2008-08-27 | 2008-08-27 | 에어갭을 구비한 샐로우 트렌치 소자분리구조, 이를 이용한시모스 이미지 센서 및 그 제조방법 |
KR10-2008-0083736 | 2008-08-27 | ||
PCT/KR2009/004776 WO2010024595A2 (ko) | 2008-08-27 | 2009-08-27 | 에어갭을 구비한 샐로우 트렌치 소자분리구조, 이를 이용한 시모스 이미지 센서 및 그 제조방법 |
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US7396732B2 (en) * | 2004-12-17 | 2008-07-08 | Interuniversitair Microelektronica Centrum Vzw (Imec) | Formation of deep trench airgaps and related applications |
US7265328B2 (en) | 2005-08-22 | 2007-09-04 | Micron Technology, Inc. | Method and apparatus providing an optical guide for an imager pixel having a ring of air-filled spaced slots around a photosensor |
KR100697290B1 (ko) * | 2005-09-08 | 2007-03-20 | 삼성전자주식회사 | 이미지 센서의 형성 방법 |
JP2007227761A (ja) | 2006-02-24 | 2007-09-06 | Matsushita Electric Ind Co Ltd | 固体撮像装置用素子 |
US7691712B2 (en) * | 2006-06-21 | 2010-04-06 | International Business Machines Corporation | Semiconductor device structures incorporating voids and methods of fabricating such structures |
KR100816733B1 (ko) * | 2006-06-29 | 2008-03-25 | 주식회사 하이닉스반도체 | 반도체 소자의 리세스 게이트 제조 방법 |
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2008
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2009
- 2009-08-27 JP JP2011524900A patent/JP5318955B2/ja active Active
- 2009-08-27 EP EP09810200.7A patent/EP2323161A4/en not_active Withdrawn
- 2009-08-27 CN CN200980133383.7A patent/CN102138210B/zh active Active
- 2009-08-27 WO PCT/KR2009/004776 patent/WO2010024595A2/ko active Application Filing
- 2009-08-27 US US13/058,039 patent/US9240345B2/en active Active
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Publication number | Publication date |
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WO2010024595A2 (ko) | 2010-03-04 |
EP2323161A4 (en) | 2014-12-03 |
CN102138210B (zh) | 2014-05-07 |
JP2012501535A (ja) | 2012-01-19 |
WO2010024595A3 (ko) | 2010-05-27 |
KR20100025107A (ko) | 2010-03-09 |
EP2323161A2 (en) | 2011-05-18 |
US9240345B2 (en) | 2016-01-19 |
CN102138210A (zh) | 2011-07-27 |
US20110186918A1 (en) | 2011-08-04 |
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