CN104152859A - 一种在真空中以多面加热来构筑恒温区域的方式 - Google Patents
一种在真空中以多面加热来构筑恒温区域的方式 Download PDFInfo
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1323056A (zh) * | 1999-08-31 | 2001-11-21 | 株式会社东芝 | 半导体衬底及其制造方法 |
CN101006548A (zh) * | 2004-06-30 | 2007-07-25 | 王望南 | 制备高质量化合物半导体材料的沉积技术 |
CN103966551A (zh) * | 2013-01-27 | 2014-08-06 | 常州碳维纳米科技有限公司 | 一种解决高温下衬底原子蒸发影响平整度的方法及装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN1323056A (zh) * | 1999-08-31 | 2001-11-21 | 株式会社东芝 | 半导体衬底及其制造方法 |
CN101006548A (zh) * | 2004-06-30 | 2007-07-25 | 王望南 | 制备高质量化合物半导体材料的沉积技术 |
CN103966551A (zh) * | 2013-01-27 | 2014-08-06 | 常州碳维纳米科技有限公司 | 一种解决高温下衬底原子蒸发影响平整度的方法及装置 |
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Owner name: CHANGZHOU GUOCHENG NEW MATERIAL TECHNOLOGY CO., LT Free format text: FORMER OWNER: JIANGNAN GRAPHENE RESEARCH INSTITUTE Effective date: 20150908 |
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Effective date of registration: 20150908 Address after: West Taihu science and Technology Industrial Park Road, Wujin District 213000 auspicious clouds in Jiangsu province Changzhou City No. 6 Applicant after: Changzhou into a new Mstar Technology Ltd Address before: 213149 Research Institute of graphene, No. 6, Xiangyun Road, Wujin Economic Development Zone, Jiangsu, Changzhou Applicant before: JiangNan Graphene Research Institute |
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Application publication date: 20141119 |
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