JP2001077373A5 - - Google Patents

Download PDF

Info

Publication number
JP2001077373A5
JP2001077373A5 JP2000204253A JP2000204253A JP2001077373A5 JP 2001077373 A5 JP2001077373 A5 JP 2001077373A5 JP 2000204253 A JP2000204253 A JP 2000204253A JP 2000204253 A JP2000204253 A JP 2000204253A JP 2001077373 A5 JP2001077373 A5 JP 2001077373A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000204253A
Other languages
Japanese (ja)
Other versions
JP2001077373A (ja
JP4666723B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000204253A priority Critical patent/JP4666723B2/ja
Priority claimed from JP2000204253A external-priority patent/JP4666723B2/ja
Publication of JP2001077373A publication Critical patent/JP2001077373A/ja
Publication of JP2001077373A5 publication Critical patent/JP2001077373A5/ja
Application granted granted Critical
Publication of JP4666723B2 publication Critical patent/JP4666723B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2000204253A 1999-07-06 2000-07-05 半導体装置の作製方法 Expired - Fee Related JP4666723B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000204253A JP4666723B2 (ja) 1999-07-06 2000-07-05 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP19109399 1999-07-06
JP11-191093 1999-07-06
JP2000204253A JP4666723B2 (ja) 1999-07-06 2000-07-05 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2001077373A JP2001077373A (ja) 2001-03-23
JP2001077373A5 true JP2001077373A5 (US06573293-20030603-C00009.png) 2007-07-12
JP4666723B2 JP4666723B2 (ja) 2011-04-06

Family

ID=32844006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000204253A Expired - Fee Related JP4666723B2 (ja) 1999-07-06 2000-07-05 半導体装置の作製方法

Country Status (2)

Country Link
US (6) US6777254B1 (US06573293-20030603-C00009.png)
JP (1) JP4666723B2 (US06573293-20030603-C00009.png)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6524895B2 (en) * 1998-12-25 2003-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6777716B1 (en) 1999-02-12 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and method of manufacturing therefor
EP1031873A3 (en) * 1999-02-23 2005-02-23 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
TW469484B (en) 1999-03-26 2001-12-21 Semiconductor Energy Lab A method for manufacturing an electrooptical device
US6952020B1 (en) 1999-07-06 2005-10-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP4666723B2 (ja) * 1999-07-06 2011-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6563482B1 (en) * 1999-07-21 2003-05-13 Semiconductor Energy Laboratory Co., Ltd. Display device
US6646287B1 (en) 1999-11-19 2003-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with tapered gate and insulating film
US7618850B2 (en) 2002-12-19 2009-11-17 Sandisk 3D Llc Method of making a diode read/write memory cell in a programmed state
US8008700B2 (en) * 2002-12-19 2011-08-30 Sandisk 3D Llc Non-volatile memory cell with embedded antifuse
US7660181B2 (en) * 2002-12-19 2010-02-09 Sandisk 3D Llc Method of making non-volatile memory cell with embedded antifuse
US7800933B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance
US7800932B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Memory cell comprising switchable semiconductor memory element with trimmable resistance
US8125601B2 (en) 2003-01-08 2012-02-28 Samsung Electronics Co., Ltd. Upper substrate and liquid crystal display device having the same
TW588463B (en) * 2003-04-04 2004-05-21 Au Optronics Corp A method for forming a low temperature polysilicon complementary metal oxide semiconductor thin film transistor
KR101035844B1 (ko) * 2004-01-06 2011-05-19 삼성전자주식회사 상부 기판 및 이를 갖는 액정표시장치
US7183147B2 (en) * 2004-03-25 2007-02-27 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method for manufacturing thereof and electronic appliance
KR100675636B1 (ko) 2004-05-31 2007-02-02 엘지.필립스 엘시디 주식회사 Goldd구조 및 ldd구조의 tft를 동시에포함하는 구동회로부 일체형 액정표시장치
KR100663355B1 (ko) * 2005-01-25 2007-01-02 삼성전자주식회사 금속막 패턴 형성방법 및 이를 이용하여 이미지 센서를제조하는 방법
TWI271868B (en) * 2005-07-08 2007-01-21 Au Optronics Corp A pixel circuit of the display panel
US7800934B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Programming methods to increase window for reverse write 3D cell
US20070115415A1 (en) * 2005-11-21 2007-05-24 Arthur Piehl Light absorbers and methods
US7731377B2 (en) * 2006-03-21 2010-06-08 Semiconductor Energy Laboratory Co., Ltd. Backlight device and display device
KR101226594B1 (ko) * 2006-05-15 2013-01-28 삼성디스플레이 주식회사 어레이 기판의 제조방법 및 이를 이용한 표시패널의제조방법
WO2007139209A1 (en) * 2006-05-31 2007-12-06 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
KR101419869B1 (ko) * 2006-05-31 2014-07-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치
US7781768B2 (en) 2006-06-29 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Display device, method for manufacturing the same, and electronic device having the same
WO2008069163A1 (en) 2006-12-05 2008-06-12 Semiconductor Energy Laboratory Co., Ltd. Plasma display panel and field emission display
WO2008069162A1 (en) 2006-12-05 2008-06-12 Semiconductor Energy Laboratory Co., Ltd. Anti-reflection film and display device
WO2008069221A1 (en) 2006-12-05 2008-06-12 Semiconductor Energy Laboratory Co., Ltd. Plasma display panel and field emission display
KR100970925B1 (ko) 2006-12-29 2010-07-20 엘지디스플레이 주식회사 액정표시장치 및 이의 제조방법
US20080265257A1 (en) * 2007-04-26 2008-10-30 Peter James Fricke Thin film transistor
TWI353063B (en) * 2007-07-27 2011-11-21 Au Optronics Corp Photo detector and method for fabricating the same
JP4998142B2 (ja) * 2007-08-23 2012-08-15 セイコーエプソン株式会社 電気光学装置及び電子機器
WO2009054159A1 (ja) * 2007-10-23 2009-04-30 Sharp Kabushiki Kaisha 表示装置及び表示装置の製造方法
US8183628B2 (en) 2007-10-29 2012-05-22 Unisantis Electronics Singapore Pte Ltd. Semiconductor structure and method of fabricating the semiconductor structure
JP5317343B2 (ja) 2009-04-28 2013-10-16 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
US8378425B2 (en) * 2008-01-29 2013-02-19 Unisantis Electronics Singapore Pte Ltd. Semiconductor storage device
US8598650B2 (en) * 2008-01-29 2013-12-03 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
JP5536986B2 (ja) * 2008-04-30 2014-07-02 三菱電機株式会社 液晶表示装置
WO2010050160A1 (ja) 2008-10-27 2010-05-06 シャープ株式会社 半導体装置及びその製造方法
JP4987926B2 (ja) * 2009-09-16 2012-08-01 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
JP5356970B2 (ja) 2009-10-01 2013-12-04 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
WO2011111662A1 (ja) 2010-03-08 2011-09-15 日本ユニサンティスエレクトロニクス株式会社 固体撮像装置
US8487357B2 (en) 2010-03-12 2013-07-16 Unisantis Electronics Singapore Pte Ltd. Solid state imaging device having high sensitivity and high pixel density
US8754418B2 (en) 2010-05-18 2014-06-17 Sharp Kabushiki Kaisha Semiconductor device, and method for producing same
JP5066590B2 (ja) 2010-06-09 2012-11-07 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置とその製造方法
JP5087655B2 (ja) 2010-06-15 2012-12-05 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
US8564034B2 (en) 2011-09-08 2013-10-22 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
US8669601B2 (en) 2011-09-15 2014-03-11 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor
JP6017134B2 (ja) * 2011-12-13 2016-10-26 東京エレクトロン株式会社 生産効率化システム、生産効率化装置および生産効率化方法
US8772175B2 (en) 2011-12-19 2014-07-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8916478B2 (en) 2011-12-19 2014-12-23 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
CA2860226C (en) 2011-12-22 2022-10-18 Randolph S. Watnick Saposin-a derived peptides and uses thereof
US8748938B2 (en) 2012-02-20 2014-06-10 Unisantis Electronics Singapore Pte. Ltd. Solid-state imaging device
KR102086626B1 (ko) * 2012-11-23 2020-03-11 한국전자통신연구원 자기 정렬 박막 트랜지스터 및 그 제조 방법
CN104871080B (zh) * 2012-12-28 2017-09-29 夏普株式会社 液晶显示器
US9704888B2 (en) * 2014-01-08 2017-07-11 Apple Inc. Display circuitry with reduced metal routing resistance
KR102205401B1 (ko) * 2014-01-14 2021-01-21 삼성디스플레이 주식회사 유기발광표시장치
JP2015173177A (ja) * 2014-03-11 2015-10-01 株式会社東芝 半導体発光素子
US9287303B1 (en) * 2015-02-13 2016-03-15 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS image sensor structure
WO2016194753A1 (ja) * 2015-06-01 2016-12-08 シャープ株式会社 表示装置
KR102375192B1 (ko) * 2015-07-03 2022-03-17 삼성디스플레이 주식회사 유기 발광 표시 장치
WO2017126438A1 (ja) * 2016-01-20 2017-07-27 シャープ株式会社 液晶表示パネルおよびその製造方法
US10141387B2 (en) * 2016-04-08 2018-11-27 Innolux Corporation Display device
CN107887336B (zh) * 2016-09-29 2019-10-11 元太科技工业股份有限公司 显示装置及其像素结构
CN108919545B (zh) * 2018-06-28 2021-05-04 厦门天马微电子有限公司 一种显示面板及显示装置
TWI692857B (zh) * 2019-01-25 2020-05-01 世界先進積體電路股份有限公司 半導體裝置與生物辨識裝置

Family Cites Families (162)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3306694A (en) * 1965-06-24 1967-02-28 Gen Electric Door and rack structure for automatic dishwasher
US4080038A (en) 1977-04-28 1978-03-21 Bunker Ramo Corporation Non-bulging quick snap-on strain relief adapter
JPS60123059A (ja) * 1983-12-08 1985-07-01 Toshiba Corp 密着型カラ−イメ−ジセンサ
JPS61184518A (ja) 1985-02-12 1986-08-18 Semiconductor Energy Lab Co Ltd 液晶表示装置作成方法
JPS61184518U (US06573293-20030603-C00009.png) 1985-05-09 1986-11-18
US4653864A (en) 1986-02-26 1987-03-31 Ovonic Imaging Systems, Inc. Liquid crystal matrix display having improved spacers and method of making same
JPS6350817A (ja) 1986-08-20 1988-03-03 Semiconductor Energy Lab Co Ltd 液晶電気光学装置作製方法
US5379139A (en) 1986-08-20 1995-01-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal device and method for manufacturing same with spacers formed by photolithography
JPH0784267B2 (ja) 1987-04-28 1995-09-13 キヤノン株式会社 給紙装置
US5032883A (en) 1987-09-09 1991-07-16 Casio Computer Co., Ltd. Thin film transistor and method of manufacturing the same
US4963504A (en) 1987-11-23 1990-10-16 Xerox Corporation Method for fabricating double implanted LDD transistor self-aligned with gate
JP2814089B2 (ja) * 1988-12-12 1998-10-22 株式会社半導体エネルギー研究所 液晶電気光学装置
SE500608C2 (sv) * 1989-01-11 1994-07-25 Roby Teknik Ab Laminerat material för konvertering till formstabila förpackningsbehållare, sätt att framställa materialet samt användning av en film av etenvinylalkoholsampolymer och amorf polyamid i ett laminerat vikformat förpackningsmaterial
GB8909011D0 (en) 1989-04-20 1989-06-07 Friend Richard H Electroluminescent devices
US5153754A (en) 1989-06-30 1992-10-06 General Electric Company Multi-layer address lines for amorphous silicon liquid crystal display devices
JP3009438B2 (ja) * 1989-08-14 2000-02-14 株式会社日立製作所 液晶表示装置
JPH0651319B2 (ja) 1989-10-20 1994-07-06 凸版印刷株式会社 射出成形ノズル及び射出成形方法
US4975385A (en) * 1990-04-06 1990-12-04 Applied Materials, Inc. Method of constructing lightly doped drain (LDD) integrated circuit structure
JP2808483B2 (ja) 1990-08-30 1998-10-08 キヤノン株式会社 液晶素子
KR940004446B1 (ko) 1990-11-05 1994-05-25 미쓰비시뎅끼 가부시끼가이샤 반도체장치의 제조방법
US5256562A (en) 1990-12-31 1993-10-26 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US5946561A (en) 1991-03-18 1999-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JP2838338B2 (ja) 1991-05-21 1998-12-16 株式会社半導体エネルギー研究所 電気光学装置の駆動方法
KR930002855A (ko) * 1991-07-15 1993-02-23 이헌조 액정표시소자의 제조방법
JP2602132B2 (ja) 1991-08-09 1997-04-23 三菱電機株式会社 薄膜電界効果素子およびその製造方法
US5182619A (en) 1991-09-03 1993-01-26 Motorola, Inc. Semiconductor device having an MOS transistor with overlapped and elevated source and drain
JP2650543B2 (ja) 1991-11-25 1997-09-03 カシオ計算機株式会社 マトリクス回路駆動装置
JP3191061B2 (ja) 1992-01-31 2001-07-23 キヤノン株式会社 半導体装置及び液晶表示装置
US5610653A (en) 1992-02-07 1997-03-11 Abecassis; Max Method and system for automatically tracking a zoomed video image
US5424244A (en) 1992-03-26 1995-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
JPH05281558A (ja) 1992-04-03 1993-10-29 Toshiba Corp 液晶表示素子
JPH05289109A (ja) * 1992-04-08 1993-11-05 Sony Corp 液晶表示装置
US5532176A (en) 1992-04-17 1996-07-02 Nippondenso Co., Ltd. Process for fabricating a complementary MIS transistor
JP3251690B2 (ja) 1992-06-01 2002-01-28 株式会社東芝 液晶表示素子
US5302966A (en) 1992-06-02 1994-04-12 David Sarnoff Research Center, Inc. Active matrix electroluminescent display and method of operation
CN1052568C (zh) 1992-07-06 2000-05-17 株式会社半导体能源研究所 形成半导体器件的方法
WO1994002880A1 (en) 1992-07-15 1994-02-03 Kabushiki Kaisha Toshiba Liquid crystal display
US5576556A (en) * 1993-08-20 1996-11-19 Semiconductor Energy Laboratory Co., Ltd. Thin film semiconductor device with gate metal oxide and sidewall spacer
JP2924506B2 (ja) 1992-10-27 1999-07-26 日本電気株式会社 アクティブマトリックス型液晶表示装置の画素構造
US5302996A (en) * 1992-11-25 1994-04-12 Eastman Kodak Company Apparatus for processing photosensitive material
US5348897A (en) * 1992-12-01 1994-09-20 Paradigm Technology, Inc. Transistor fabrication methods using overlapping masks
TW226478B (en) * 1992-12-04 1994-07-11 Semiconductor Energy Res Co Ltd Semiconductor device and method for manufacturing the same
JP3587537B2 (ja) 1992-12-09 2004-11-10 株式会社半導体エネルギー研究所 半導体装置
JP3437863B2 (ja) 1993-01-18 2003-08-18 株式会社半導体エネルギー研究所 Mis型半導体装置の作製方法
AU671531B2 (en) 1993-01-26 1996-08-29 Hughes Aircraft Company Liquid crystal cell with spacers and method of manufacturing same
US5982002A (en) 1993-01-27 1999-11-09 Seiko Instruments Inc. Light valve having a semiconductor film and a fabrication process thereof
DE69434235T2 (de) 1993-02-10 2005-12-08 Seiko Epson Corp. Aktivmatrixschaltkreisplatine und deren Herstellungsverfahren
JP3562588B2 (ja) 1993-02-15 2004-09-08 株式会社半導体エネルギー研究所 半導体装置の製造方法
JP3210126B2 (ja) 1993-03-15 2001-09-17 株式会社東芝 液晶表示装置の製造方法
JPH06273735A (ja) 1993-03-18 1994-09-30 Nippon Telegr & Teleph Corp <Ntt> 液晶セル
JPH07152024A (ja) 1993-05-17 1995-06-16 Sharp Corp 液晶表示素子
KR100355938B1 (ko) 1993-05-26 2002-12-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치제작방법
JP2789293B2 (ja) 1993-07-14 1998-08-20 株式会社半導体エネルギー研究所 半導体装置作製方法
US5594569A (en) 1993-07-22 1997-01-14 Semiconductor Energy Laboratory Co., Ltd. Liquid-crystal electro-optical apparatus and method of manufacturing the same
JP2814049B2 (ja) 1993-08-27 1998-10-22 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US5581092A (en) 1993-09-07 1996-12-03 Semiconductor Energy Laboratory Co., Ltd. Gate insulated semiconductor device
JPH0784267A (ja) 1993-09-20 1995-03-31 Matsushita Electric Ind Co Ltd 液晶表示素子及び空間光変調素子
US5567966A (en) 1993-09-29 1996-10-22 Texas Instruments Incorporated Local thinning of channel region for ultra-thin film SOI MOSFET with elevated source/drain
JP3030368B2 (ja) 1993-10-01 2000-04-10 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JPH07135323A (ja) 1993-10-20 1995-05-23 Semiconductor Energy Lab Co Ltd 薄膜状半導体集積回路およびその作製方法
JP3431033B2 (ja) 1993-10-29 2003-07-28 株式会社半導体エネルギー研究所 半導体作製方法
TW264575B (US06573293-20030603-C00009.png) 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
US5923962A (en) 1993-10-29 1999-07-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US7081938B1 (en) 1993-12-03 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
KR100275717B1 (ko) 1993-12-28 2000-12-15 윤종용 다결정 실리콘 박막 트랜지스터 제조 방법
US5482871A (en) 1994-04-15 1996-01-09 Texas Instruments Incorporated Method for forming a mesa-isolated SOI transistor having a split-process polysilicon gate
US5786247A (en) 1994-05-06 1998-07-28 Vlsi Technology, Inc. Low voltage CMOS process with individually adjustable LDD spacers
DE19500380C2 (de) 1994-05-20 2001-05-17 Mitsubishi Electric Corp Aktivmatrix-Flüssigkristallanzeige und Herstellungsverfahren dafür
CN1230919C (zh) * 1994-06-02 2005-12-07 株式会社半导体能源研究所 有源矩阵显示器和电光元件
JP3312083B2 (ja) 1994-06-13 2002-08-05 株式会社半導体エネルギー研究所 表示装置
US5413945A (en) 1994-08-12 1995-05-09 United Micro Electronics Corporation Blanket N-LDD implantation for sub-micron MOS device manufacturing
JP3471928B2 (ja) 1994-10-07 2003-12-02 株式会社半導体エネルギー研究所 アクティブマトリクス表示装置の駆動方法
JP2694126B2 (ja) 1995-02-06 1997-12-24 インターナショナル・ビジネス・マシーンズ・コーポレイション 液晶表示装置及びその製造方法
TW345654B (en) 1995-02-15 1998-11-21 Handotai Energy Kenkyusho Kk Active matrix display device
JPH08248427A (ja) 1995-03-13 1996-09-27 Semiconductor Energy Lab Co Ltd 液晶表示装置
US5834327A (en) 1995-03-18 1998-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
US5706064A (en) 1995-03-31 1998-01-06 Kabushiki Kaisha Toshiba LCD having an organic-inorganic hybrid glass functional layer
US5576926A (en) 1995-04-03 1996-11-19 American Technical Ceramics Corporation Capacitor with buried isolated electrode
US5532175A (en) 1995-04-17 1996-07-02 Motorola, Inc. Method of adjusting a threshold voltage for a semiconductor device fabricated on a semiconductor on insulator substrate
KR100218500B1 (ko) 1995-05-17 1999-09-01 윤종용 실리콘막 및 그 제조 방법과 이를 포함하는 박막트랜지스터 및 그 제조방법
US5576887A (en) 1995-06-22 1996-11-19 Honeywell Inc. Head gear display system using off-axis image sources
KR0164079B1 (ko) 1995-06-30 1998-12-01 김주용 반도체 소자 및 그 제조방법
US6286359B1 (en) 1995-08-18 2001-09-11 Director-General Of The Agency Of Industrial Science And Technology Method for testing frequency response characteristics of laser displacement/vibration meters
JP2647815B2 (ja) 1995-08-18 1997-08-27 工業技術院長 レーザー変位計・レーザー振動計の周波数特性測定法
JPH09120062A (ja) 1995-08-18 1997-05-06 Toshiba Electron Eng Corp カラーフィルタ基板及びその製造方法、それを用いた液晶表示素子及びその製造方法
JP3999824B2 (ja) 1995-08-21 2007-10-31 東芝電子エンジニアリング株式会社 液晶表示素子
JPH0973093A (ja) 1995-09-06 1997-03-18 Toshiba Electron Eng Corp 液晶表示装置、及びその製造方法
TW373098B (en) 1995-09-06 1999-11-01 Toshiba Corp Liquid crystal exposure component and its fabricating method
US6888608B2 (en) 1995-09-06 2005-05-03 Kabushiki Kaisha Toshiba Liquid crystal display device
JPH0980447A (ja) 1995-09-08 1997-03-28 Toshiba Electron Eng Corp 液晶表示素子
JP3199215B2 (ja) 1995-09-14 2001-08-13 シャープ株式会社 液晶表示素子およびその製造方法
US5917563A (en) 1995-10-16 1999-06-29 Sharp Kabushiki Kaisha Liquid crystal display device having an insulation film made of organic material between an additional capacity and a bus line
JPH09127525A (ja) 1995-11-06 1997-05-16 Sharp Corp 液晶表示素子およびその製造方法
TW384412B (en) 1995-11-17 2000-03-11 Semiconductor Energy Lab Display device
TW309633B (US06573293-20030603-C00009.png) 1995-12-14 1997-07-01 Handotai Energy Kenkyusho Kk
JP4067588B2 (ja) 1995-12-19 2008-03-26 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP3310152B2 (ja) 1996-01-18 2002-07-29 株式会社東芝 液晶表示装置およびその製造方法
US6236445B1 (en) 1996-02-22 2001-05-22 Hughes Electronics Corporation Method for making topographic projections
DE19712233C2 (de) 1996-03-26 2003-12-11 Lg Philips Lcd Co Flüssigkristallanzeige und Herstellungsverfahren dafür
JP3222380B2 (ja) 1996-04-25 2001-10-29 シャープ株式会社 電界効果トランジスタ、および、cmosトランジスタ
JPH1056184A (ja) * 1996-06-04 1998-02-24 Semiconductor Energy Lab Co Ltd 半導体集積回路およびその作製方法
TW334581B (en) 1996-06-04 1998-06-21 Handotai Energy Kenkyusho Kk Semiconductor integrated circuit and fabrication method thereof
US7298447B1 (en) 1996-06-25 2007-11-20 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display panel
US6288764B1 (en) * 1996-06-25 2001-09-11 Semiconductor Energy Laboratory Co., Ltd. Display device or electronic device having liquid crystal display panel
JP3640224B2 (ja) * 1996-06-25 2005-04-20 株式会社半導体エネルギー研究所 液晶表示パネル
JP3708637B2 (ja) 1996-07-15 2005-10-19 株式会社半導体エネルギー研究所 液晶表示装置
JP2907137B2 (ja) 1996-08-05 1999-06-21 日本電気株式会社 液晶表示装置
JPH1062789A (ja) * 1996-08-23 1998-03-06 Sharp Corp 液晶表示装置及びその製造方法
JPH1068955A (ja) 1996-08-29 1998-03-10 Toshiba Corp 液晶表示素子
JPH10153797A (ja) 1996-09-26 1998-06-09 Toshiba Corp 液晶表示装置
JPH10153785A (ja) 1996-09-26 1998-06-09 Toshiba Corp 液晶表示装置
JP3571887B2 (ja) 1996-10-18 2004-09-29 キヤノン株式会社 アクティブマトリクス基板及び液晶装置
JPH10123534A (ja) 1996-10-23 1998-05-15 Toshiba Corp 液晶表示素子
JP3949759B2 (ja) * 1996-10-29 2007-07-25 東芝電子エンジニアリング株式会社 カラーフィルタ基板および液晶表示素子
JP3525316B2 (ja) 1996-11-12 2004-05-10 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置
JP3762002B2 (ja) * 1996-11-29 2006-03-29 株式会社東芝 薄膜トランジスタ、及び液晶表示装置
JP4086925B2 (ja) * 1996-12-27 2008-05-14 株式会社半導体エネルギー研究所 アクティブマトリクスディスプレイ
US5831710A (en) 1997-02-06 1998-11-03 International Business Machines Corporation Liquid crystal display
JP3856889B2 (ja) 1997-02-06 2006-12-13 株式会社半導体エネルギー研究所 反射型表示装置および電子デバイス
JPH10228022A (ja) * 1997-02-17 1998-08-25 Semiconductor Energy Lab Co Ltd 液晶表示装置およびその作製方法
JPH10268360A (ja) 1997-03-26 1998-10-09 Semiconductor Energy Lab Co Ltd 表示装置
JP3883641B2 (ja) 1997-03-27 2007-02-21 株式会社半導体エネルギー研究所 コンタクト構造およびアクティブマトリクス型表示装置
JP3274081B2 (ja) 1997-04-08 2002-04-15 松下電器産業株式会社 薄膜トランジスタの製造方法および液晶表示装置の製造方法
US5978063A (en) 1997-04-15 1999-11-02 Xerox Corporation Smart spacers for active matrix liquid crystal projection light valves
JPH10319431A (ja) * 1997-05-15 1998-12-04 Advanced Display:Kk 薄膜トランジスタアレイ基板
JP3998755B2 (ja) 1997-05-22 2007-10-31 株式会社半導体エネルギー研究所 半導体表示装置
US6465268B2 (en) 1997-05-22 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an electro-optical device
US5766694A (en) 1997-05-29 1998-06-16 Univ Kent State Ohio Method for forming uniformly-spaced plastic substrate liquid crystal displays
US6251763B1 (en) * 1997-06-30 2001-06-26 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing same
US6066860A (en) 1997-12-25 2000-05-23 Seiko Epson Corporation Substrate for electro-optical apparatus, electro-optical apparatus, method for driving electro-optical apparatus, electronic device and projection display device
JPH11212047A (ja) 1998-01-21 1999-08-06 Semiconductor Energy Lab Co Ltd 電子機器
JP3980156B2 (ja) 1998-02-26 2007-09-26 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置
US6617644B1 (en) 1998-11-09 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6287951B1 (en) * 1998-12-07 2001-09-11 Motorola Inc. Process for forming a combination hardmask and antireflective layer
US6259138B1 (en) 1998-12-18 2001-07-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having multilayered gate electrode and impurity regions overlapping therewith
US6524895B2 (en) 1998-12-25 2003-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
EP1020920B1 (en) 1999-01-11 2010-06-02 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a driver TFT and a pixel TFT on a common substrate
US6777716B1 (en) * 1999-02-12 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and method of manufacturing therefor
US6576924B1 (en) 1999-02-12 2003-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having at least a pixel unit and a driver circuit unit over a same substrate
EP1031873A3 (en) * 1999-02-23 2005-02-23 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US6306694B1 (en) 1999-03-12 2001-10-23 Semiconductor Energy Laboratory Co., Ltd. Process of fabricating a semiconductor device
US6281552B1 (en) 1999-03-23 2001-08-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having ldd regions
TW469484B (en) * 1999-03-26 2001-12-21 Semiconductor Energy Lab A method for manufacturing an electrooptical device
US6399988B1 (en) 1999-03-26 2002-06-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor having lightly doped regions
TW444257B (en) 1999-04-12 2001-07-01 Semiconductor Energy Lab Semiconductor device and method for fabricating the same
EP2256808A2 (en) 1999-04-30 2010-12-01 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method therof
JP4298131B2 (ja) 1999-05-14 2009-07-15 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
TW517260B (en) 1999-05-15 2003-01-11 Semiconductor Energy Lab Semiconductor device and method for its fabrication
CN100592523C (zh) 1999-06-02 2010-02-24 株式会社半导体能源研究所 半导体器件及其制造方法
US7245018B1 (en) 1999-06-22 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
JP4307635B2 (ja) 1999-06-22 2009-08-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6661096B1 (en) 1999-06-29 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Wiring material semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
JP4827276B2 (ja) 1999-07-05 2011-11-30 株式会社半導体エネルギー研究所 レーザー照射装置、レーザー照射方法及び半導体装置の作製方法
US6952020B1 (en) * 1999-07-06 2005-10-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP4666723B2 (ja) 1999-07-06 2011-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW459275B (en) * 1999-07-06 2001-10-11 Semiconductor Energy Lab Semiconductor device and method of fabricating the same
TW480554B (en) 1999-07-22 2002-03-21 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
TW490713B (en) 1999-07-22 2002-06-11 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
TW487959B (en) 1999-08-13 2002-05-21 Semiconductor Energy Lab Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device
JP2001175198A (ja) * 1999-12-14 2001-06-29 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US7071041B2 (en) 2000-01-20 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6613620B2 (en) * 2000-07-31 2003-09-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same

Similar Documents

Publication Publication Date Title
BE2016C059I2 (US06573293-20030603-C00009.png)
BE2011C032I2 (US06573293-20030603-C00009.png)
BE2010C018I2 (US06573293-20030603-C00009.png)
BE2009C057I2 (US06573293-20030603-C00009.png)
BRPI0113372A8 (US06573293-20030603-C00009.png)
CH694022C1 (US06573293-20030603-C00009.png)
BY5768C1 (US06573293-20030603-C00009.png)
BRPI0003419A (US06573293-20030603-C00009.png)
CN3138983S (US06573293-20030603-C00009.png)
CN3142239S (US06573293-20030603-C00009.png)
AU2000276891A8 (US06573293-20030603-C00009.png)
AU2000270908A8 (US06573293-20030603-C00009.png)
BY4905C1 (US06573293-20030603-C00009.png)
AU2000264849A8 (US06573293-20030603-C00009.png)
CN3151058S (US06573293-20030603-C00009.png)
CN3143905S (US06573293-20030603-C00009.png)
CL2006000179A1 (US06573293-20030603-C00009.png)
CN3134543S (US06573293-20030603-C00009.png)
CN3134731S (US06573293-20030603-C00009.png)
CN3134893S (US06573293-20030603-C00009.png)
CN3135584S (US06573293-20030603-C00009.png)
CN3135789S (US06573293-20030603-C00009.png)
CN3136262S (US06573293-20030603-C00009.png)
CN3149762S (US06573293-20030603-C00009.png)
CN3139849S (US06573293-20030603-C00009.png)