JP2000156476A5 - - Google Patents

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Publication number
JP2000156476A5
JP2000156476A5 JP1998251511A JP25151198A JP2000156476A5 JP 2000156476 A5 JP2000156476 A5 JP 2000156476A5 JP 1998251511 A JP1998251511 A JP 1998251511A JP 25151198 A JP25151198 A JP 25151198A JP 2000156476 A5 JP2000156476 A5 JP 2000156476A5
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JP
Japan
Prior art keywords
film
manufacturing
semiconductor device
amorphous silicon
forming
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JP1998251511A
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English (en)
Japanese (ja)
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JP4024940B2 (ja
JP2000156476A (ja
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Priority claimed from JP10251308A external-priority patent/JP2992516B1/ja
Publication of JP2000156476A publication Critical patent/JP2000156476A/ja
Publication of JP2000156476A5 publication Critical patent/JP2000156476A5/ja
Application granted granted Critical
Publication of JP4024940B2 publication Critical patent/JP4024940B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP25151198A 1998-09-04 1998-09-04 半導体装置の製造方法 Expired - Fee Related JP4024940B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10251308A JP2992516B1 (ja) 1998-09-04 1998-09-04 半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP10251308A Division JP2992516B1 (ja) 1998-09-04 1998-09-04 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2000156476A JP2000156476A (ja) 2000-06-06
JP2000156476A5 true JP2000156476A5 (enExample) 2005-03-17
JP4024940B2 JP4024940B2 (ja) 2007-12-19

Family

ID=17220884

Family Applications (2)

Application Number Title Priority Date Filing Date
JP10251308A Expired - Fee Related JP2992516B1 (ja) 1998-09-04 1998-09-04 半導体装置の製造方法
JP25151198A Expired - Fee Related JP4024940B2 (ja) 1998-09-04 1998-09-04 半導体装置の製造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP10251308A Expired - Fee Related JP2992516B1 (ja) 1998-09-04 1998-09-04 半導体装置の製造方法

Country Status (4)

Country Link
US (2) US6524927B1 (enExample)
JP (2) JP2992516B1 (enExample)
KR (1) KR20000022801A (enExample)
TW (1) TW447113B (enExample)

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JP3173481B2 (ja) 1998-11-25 2001-06-04 日本電気株式会社 スタック電極を有する半導体装置及びその製造方法
JP2000183311A (ja) 1998-12-17 2000-06-30 Nec Corp 半導体装置及びその製造方法
JP3246476B2 (ja) 1999-06-01 2002-01-15 日本電気株式会社 容量素子の製造方法、及び、容量素子
JP2002016237A (ja) * 2000-06-27 2002-01-18 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2002026289A (ja) * 2000-07-03 2002-01-25 Mitsubishi Electric Corp 半導体装置の製造方法
JP2002043547A (ja) * 2000-07-28 2002-02-08 Nec Kyushu Ltd 半導体装置およびその製造方法
JP3746669B2 (ja) * 2000-10-17 2006-02-15 株式会社ルネサステクノロジ 半導体装置の製造方法
FR2819633B1 (fr) * 2001-01-18 2003-05-30 St Microelectronics Sa Procede d'integration d'une memoire dram
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JP2002313951A (ja) * 2001-04-11 2002-10-25 Hitachi Ltd 半導体集積回路装置及びその製造方法
KR100404478B1 (ko) * 2001-05-16 2003-11-05 주식회사 하이닉스반도체 반도체소자의 커패시터 형성방법
US6458652B1 (en) * 2001-08-20 2002-10-01 Micron Technology, Inc. Methods of forming capacitor electrodes
JP2003078028A (ja) * 2001-08-31 2003-03-14 Hitachi Ltd 半導体装置およびその製造方法
KR100418573B1 (ko) * 2001-09-14 2004-02-11 주식회사 하이닉스반도체 반도체소자의 제조 방법
JP2003273246A (ja) 2002-03-19 2003-09-26 Toshiba Corp 半導体記憶装置、及びその製造方法
KR100808558B1 (ko) * 2002-05-16 2008-02-29 매그나칩 반도체 유한회사 엠아이엠 캐패시터 형성방법
KR100808557B1 (ko) * 2002-05-16 2008-02-29 매그나칩 반도체 유한회사 엠아이엠 캐패시터 형성방법
JP2004140198A (ja) * 2002-10-18 2004-05-13 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
KR100620197B1 (ko) * 2002-12-30 2006-09-01 동부일렉트로닉스 주식회사 반도체 소자의 모스형 트랜지스터 제조 방법
US6964901B2 (en) * 2003-06-03 2005-11-15 Micron Technology, Inc. Methods of forming rugged electrically conductive surfaces and layers
US7132201B2 (en) * 2003-09-12 2006-11-07 Micron Technology, Inc. Transparent amorphous carbon structure in semiconductor devices
FR2871935A1 (fr) * 2004-06-18 2005-12-23 St Microelectronics Crolles 2 Circuit integre comprenant un condensateur a elecrodes metalliques et procede de fabrication d'un tel condensateur
JP4470170B2 (ja) 2004-11-30 2010-06-02 エルピーダメモリ株式会社 半導体装置及びその製造方法
JP2007053279A (ja) * 2005-08-19 2007-03-01 Elpida Memory Inc 半導体装置の製造方法
US7875959B2 (en) * 2005-08-31 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure having selective silicide-induced stress and a method of producing same
KR100806042B1 (ko) * 2006-08-31 2008-02-26 동부일렉트로닉스 주식회사 반도체 소자 제조장치 및 이를 이용한 반도체 소자제조방법
KR100864927B1 (ko) * 2006-11-13 2008-10-23 동부일렉트로닉스 주식회사 반도체 소자의 엠아이엠 형성 방법
DE102007002965A1 (de) * 2007-01-19 2008-07-24 Infineon Technologies Ag Verfahren zur Herstellung einer kapazitiven Struktur oder Varistorstruktur in einem Graben eines Halbleiterkörper
KR101406225B1 (ko) * 2008-04-11 2014-06-13 삼성전자주식회사 반도체 소자의 제조방법
KR101096835B1 (ko) * 2010-01-08 2011-12-22 주식회사 하이닉스반도체 반도체 소자의 형성 방법
JP5731858B2 (ja) * 2011-03-09 2015-06-10 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置及び半導体装置の製造方法
CN115382743B (zh) * 2021-05-24 2023-08-22 成宏能源股份有限公司 形成具有涂层的结构的方法及具有涂层的结构

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JP3071268B2 (ja) 1991-10-23 2000-07-31 沖電気工業株式会社 半導体装置の製造方法
JP3071284B2 (ja) 1991-12-20 2000-07-31 宮崎沖電気株式会社 半導体素子の製造方法
JPH11150249A (ja) * 1997-11-16 1999-06-02 Anelva Corp 凹凸状ポリシリコン層の形成方法及びこの方法の実施に使用される基板処理装置並びに半導体メモリデバイス
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JP3039173B2 (ja) 1993-01-06 2000-05-08 日本電気株式会社 スタックト型ｄｒａｍのストレージノード電極の形成方法
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US5340765A (en) * 1993-08-13 1994-08-23 Micron Semiconductor, Inc. Method for forming enhanced capacitance stacked capacitor structures using hemi-spherical grain polysilicon
JP2595883B2 (ja) 1993-12-01 1997-04-02 日本電気株式会社 半導体装置の製造方法
US5418180A (en) * 1994-06-14 1995-05-23 Micron Semiconductor, Inc. Process for fabricating storage capacitor structures using CVD tin on hemispherical grain silicon
US5831282A (en) * 1995-10-31 1998-11-03 Micron Technology, Inc. Method of producing an HSG structure using an amorphous silicon disorder layer as a substrate
US5801413A (en) * 1995-12-19 1998-09-01 Micron Technology, Inc. Container-shaped bottom electrode for integrated circuit capacitor with partially rugged surface
JPH09213892A (ja) 1996-02-05 1997-08-15 Miyagi Oki Denki Kk 半導体素子の製造方法
JP2795313B2 (ja) * 1996-05-08 1998-09-10 日本電気株式会社 容量素子及びその製造方法
JPH09298284A (ja) 1996-05-09 1997-11-18 Nec Corp 半導体容量素子の形成方法
KR100219482B1 (ko) 1996-05-23 1999-09-01 윤종용 반도체 메모리 장치의 커패시터 제조 방법
KR100230363B1 (ko) * 1996-06-28 1999-11-15 윤종용 반도체장치의 커패시터 제조방법
US5937314A (en) * 1997-02-28 1999-08-10 Micron Technology, Inc. Diffusion-enhanced crystallization of amorphous materials to improve surface roughness
JP3149910B2 (ja) * 1997-06-05 2001-03-26 日本電気株式会社 半導体装置の製造方法
US6207523B1 (en) * 1997-07-03 2001-03-27 Micron Technology, Inc. Methods of forming capacitors DRAM arrays, and monolithic integrated circuits
US6146967A (en) * 1997-08-20 2000-11-14 Micron Technology, Inc. Selective deposition of amorphous silicon film seeded in a chlorine gas and a hydride gas ambient when forming a stacked capacitor with HSG
US6143605A (en) * 1998-03-12 2000-11-07 Worldwide Semiconductor Manufacturing Corporation Method for making a DRAM capacitor using a double layer of insitu doped polysilicon and undoped amorphous polysilicon with HSG polysilicon
US6037219A (en) * 1998-06-25 2000-03-14 Vanguard International Semiconductor Corporation One step in situ doped amorphous silicon layers used for selective hemispherical grain silicon formation for crown shaped capacitor applications
US5913119A (en) * 1998-06-26 1999-06-15 Vanguard Int Semiconduct Corp Method of selective growth of a hemispherical grain silicon layer on the outer sides of a crown shaped DRAM capacitor structure
US6046083A (en) * 1998-06-26 2000-04-04 Vanguard International Semiconductor Corporation Growth enhancement of hemispherical grain silicon on a doped polysilicon storage node capacitor structure, for dynamic random access memory applications
KR100292938B1 (ko) * 1998-07-16 2001-07-12 윤종용 고집적디램셀커패시터및그의제조방법
US6090679A (en) * 1998-11-30 2000-07-18 Worldwide Semiconductor Manufacturing Corporation Method for forming a crown capacitor
JP2000183311A (ja) * 1998-12-17 2000-06-30 Nec Corp 半導体装置及びその製造方法

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