JP2992516B1 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JP2992516B1
JP2992516B1 JP10251308A JP25130898A JP2992516B1 JP 2992516 B1 JP2992516 B1 JP 2992516B1 JP 10251308 A JP10251308 A JP 10251308A JP 25130898 A JP25130898 A JP 25130898A JP 2992516 B1 JP2992516 B1 JP 2992516B1
Authority
JP
Japan
Prior art keywords
film
silicon
silicon film
amorphous silicon
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP10251308A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000156475A (ja
Inventor
安浩 菅原
亮一 古川
俊雄 植村
朗 高松
裕彦 山本
正義 吉田
正行 石坂
晋平 飯島
譲 大路
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Solutions Technology Ltd
Original Assignee
Hitachi Ltd
Hitachi ULSI Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi ULSI Systems Co Ltd filed Critical Hitachi Ltd
Priority to JP10251308A priority Critical patent/JP2992516B1/ja
Priority to JP25151198A priority patent/JP4024940B2/ja
Priority to TW088113539A priority patent/TW447113B/zh
Priority to KR1019990036454A priority patent/KR20000022801A/ko
Priority to US09/390,683 priority patent/US6524927B1/en
Application granted granted Critical
Publication of JP2992516B1 publication Critical patent/JP2992516B1/ja
Publication of JP2000156475A publication Critical patent/JP2000156475A/ja
Priority to US10/271,798 priority patent/US6717202B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/712—Electrodes having non-planar surfaces, e.g. formed by texturisation being rough surfaces, e.g. using hemispherical grains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
JP10251308A 1998-09-04 1998-09-04 半導体装置の製造方法 Expired - Fee Related JP2992516B1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP10251308A JP2992516B1 (ja) 1998-09-04 1998-09-04 半導体装置の製造方法
JP25151198A JP4024940B2 (ja) 1998-09-04 1998-09-04 半導体装置の製造方法
TW088113539A TW447113B (en) 1998-09-04 1999-08-07 Semiconductor device and the manufacturing method thereof
KR1019990036454A KR20000022801A (ko) 1998-09-04 1999-08-31 반도체 장치 및 그 제조 방법
US09/390,683 US6524927B1 (en) 1998-09-04 1999-09-07 Semiconductor device and method of fabricating the same
US10/271,798 US6717202B2 (en) 1998-09-04 2002-10-17 HSG semiconductor capacitor with migration inhibition layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10251308A JP2992516B1 (ja) 1998-09-04 1998-09-04 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP25151198A Division JP4024940B2 (ja) 1998-09-04 1998-09-04 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2992516B1 true JP2992516B1 (ja) 1999-12-20
JP2000156475A JP2000156475A (ja) 2000-06-06

Family

ID=17220884

Family Applications (2)

Application Number Title Priority Date Filing Date
JP10251308A Expired - Fee Related JP2992516B1 (ja) 1998-09-04 1998-09-04 半導体装置の製造方法
JP25151198A Expired - Fee Related JP4024940B2 (ja) 1998-09-04 1998-09-04 半導体装置の製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP25151198A Expired - Fee Related JP4024940B2 (ja) 1998-09-04 1998-09-04 半導体装置の製造方法

Country Status (4)

Country Link
US (2) US6524927B1 (enExample)
JP (2) JP2992516B1 (enExample)
KR (1) KR20000022801A (enExample)
TW (1) TW447113B (enExample)

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JP3173481B2 (ja) 1998-11-25 2001-06-04 日本電気株式会社 スタック電極を有する半導体装置及びその製造方法
JP2000183311A (ja) 1998-12-17 2000-06-30 Nec Corp 半導体装置及びその製造方法
JP3246476B2 (ja) 1999-06-01 2002-01-15 日本電気株式会社 容量素子の製造方法、及び、容量素子
JP2002016237A (ja) * 2000-06-27 2002-01-18 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2002026289A (ja) * 2000-07-03 2002-01-25 Mitsubishi Electric Corp 半導体装置の製造方法
JP2002043547A (ja) * 2000-07-28 2002-02-08 Nec Kyushu Ltd 半導体装置およびその製造方法
JP3746669B2 (ja) * 2000-10-17 2006-02-15 株式会社ルネサステクノロジ 半導体装置の製造方法
FR2819633B1 (fr) * 2001-01-18 2003-05-30 St Microelectronics Sa Procede d'integration d'une memoire dram
KR100398580B1 (ko) * 2001-02-22 2003-09-19 주식회사 하이닉스반도체 반도체 메모리 소자의 제조방법
JP2002313951A (ja) * 2001-04-11 2002-10-25 Hitachi Ltd 半導体集積回路装置及びその製造方法
KR100404478B1 (ko) * 2001-05-16 2003-11-05 주식회사 하이닉스반도체 반도체소자의 커패시터 형성방법
US6458652B1 (en) * 2001-08-20 2002-10-01 Micron Technology, Inc. Methods of forming capacitor electrodes
JP2003078028A (ja) * 2001-08-31 2003-03-14 Hitachi Ltd 半導体装置およびその製造方法
KR100418573B1 (ko) * 2001-09-14 2004-02-11 주식회사 하이닉스반도체 반도체소자의 제조 방법
JP2003273246A (ja) 2002-03-19 2003-09-26 Toshiba Corp 半導体記憶装置、及びその製造方法
KR100808558B1 (ko) * 2002-05-16 2008-02-29 매그나칩 반도체 유한회사 엠아이엠 캐패시터 형성방법
KR100808557B1 (ko) * 2002-05-16 2008-02-29 매그나칩 반도체 유한회사 엠아이엠 캐패시터 형성방법
JP2004140198A (ja) * 2002-10-18 2004-05-13 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
KR100620197B1 (ko) * 2002-12-30 2006-09-01 동부일렉트로닉스 주식회사 반도체 소자의 모스형 트랜지스터 제조 방법
US6964901B2 (en) * 2003-06-03 2005-11-15 Micron Technology, Inc. Methods of forming rugged electrically conductive surfaces and layers
US7132201B2 (en) * 2003-09-12 2006-11-07 Micron Technology, Inc. Transparent amorphous carbon structure in semiconductor devices
FR2871935A1 (fr) * 2004-06-18 2005-12-23 St Microelectronics Crolles 2 Circuit integre comprenant un condensateur a elecrodes metalliques et procede de fabrication d'un tel condensateur
JP4470170B2 (ja) 2004-11-30 2010-06-02 エルピーダメモリ株式会社 半導体装置及びその製造方法
JP2007053279A (ja) * 2005-08-19 2007-03-01 Elpida Memory Inc 半導体装置の製造方法
US7875959B2 (en) * 2005-08-31 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure having selective silicide-induced stress and a method of producing same
KR100806042B1 (ko) * 2006-08-31 2008-02-26 동부일렉트로닉스 주식회사 반도체 소자 제조장치 및 이를 이용한 반도체 소자제조방법
KR100864927B1 (ko) * 2006-11-13 2008-10-23 동부일렉트로닉스 주식회사 반도체 소자의 엠아이엠 형성 방법
DE102007002965A1 (de) * 2007-01-19 2008-07-24 Infineon Technologies Ag Verfahren zur Herstellung einer kapazitiven Struktur oder Varistorstruktur in einem Graben eines Halbleiterkörper
KR101406225B1 (ko) * 2008-04-11 2014-06-13 삼성전자주식회사 반도체 소자의 제조방법
KR101096835B1 (ko) * 2010-01-08 2011-12-22 주식회사 하이닉스반도체 반도체 소자의 형성 방법
JP5731858B2 (ja) * 2011-03-09 2015-06-10 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置及び半導体装置の製造方法
CN115382743B (zh) * 2021-05-24 2023-08-22 成宏能源股份有限公司 形成具有涂层的结构的方法及具有涂层的结构

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JP3071268B2 (ja) 1991-10-23 2000-07-31 沖電気工業株式会社 半導体装置の製造方法
JP3071284B2 (ja) 1991-12-20 2000-07-31 宮崎沖電気株式会社 半導体素子の製造方法
JPH11150249A (ja) * 1997-11-16 1999-06-02 Anelva Corp 凹凸状ポリシリコン層の形成方法及びこの方法の実施に使用される基板処理装置並びに半導体メモリデバイス
JP3034377B2 (ja) 1992-05-12 2000-04-17 宮崎沖電気株式会社 半導体素子におけるキャパシタ電極の製造方法
US5208479A (en) * 1992-05-15 1993-05-04 Micron Technology, Inc. Method of increasing capacitance of polycrystalline silicon devices by surface roughening and polycrystalline silicon devices
JP3039173B2 (ja) 1993-01-06 2000-05-08 日本電気株式会社 スタックト型ｄｒａｍのストレージノード電極の形成方法
DE4419074C2 (de) * 1993-06-03 1998-07-02 Micron Semiconductor Inc Verfahren zum gleichmäßigen Dotieren von polykristallinem Silizium mit halbkugelförmiger Körnung
US5340765A (en) * 1993-08-13 1994-08-23 Micron Semiconductor, Inc. Method for forming enhanced capacitance stacked capacitor structures using hemi-spherical grain polysilicon
JP2595883B2 (ja) 1993-12-01 1997-04-02 日本電気株式会社 半導体装置の製造方法
US5418180A (en) * 1994-06-14 1995-05-23 Micron Semiconductor, Inc. Process for fabricating storage capacitor structures using CVD tin on hemispherical grain silicon
US5831282A (en) * 1995-10-31 1998-11-03 Micron Technology, Inc. Method of producing an HSG structure using an amorphous silicon disorder layer as a substrate
US5801413A (en) * 1995-12-19 1998-09-01 Micron Technology, Inc. Container-shaped bottom electrode for integrated circuit capacitor with partially rugged surface
JPH09213892A (ja) 1996-02-05 1997-08-15 Miyagi Oki Denki Kk 半導体素子の製造方法
JP2795313B2 (ja) * 1996-05-08 1998-09-10 日本電気株式会社 容量素子及びその製造方法
JPH09298284A (ja) 1996-05-09 1997-11-18 Nec Corp 半導体容量素子の形成方法
KR100219482B1 (ko) 1996-05-23 1999-09-01 윤종용 반도체 메모리 장치의 커패시터 제조 방법
KR100230363B1 (ko) * 1996-06-28 1999-11-15 윤종용 반도체장치의 커패시터 제조방법
US5937314A (en) * 1997-02-28 1999-08-10 Micron Technology, Inc. Diffusion-enhanced crystallization of amorphous materials to improve surface roughness
JP3149910B2 (ja) * 1997-06-05 2001-03-26 日本電気株式会社 半導体装置の製造方法
US6207523B1 (en) * 1997-07-03 2001-03-27 Micron Technology, Inc. Methods of forming capacitors DRAM arrays, and monolithic integrated circuits
US6146967A (en) * 1997-08-20 2000-11-14 Micron Technology, Inc. Selective deposition of amorphous silicon film seeded in a chlorine gas and a hydride gas ambient when forming a stacked capacitor with HSG
US6143605A (en) * 1998-03-12 2000-11-07 Worldwide Semiconductor Manufacturing Corporation Method for making a DRAM capacitor using a double layer of insitu doped polysilicon and undoped amorphous polysilicon with HSG polysilicon
US6037219A (en) * 1998-06-25 2000-03-14 Vanguard International Semiconductor Corporation One step in situ doped amorphous silicon layers used for selective hemispherical grain silicon formation for crown shaped capacitor applications
US5913119A (en) * 1998-06-26 1999-06-15 Vanguard Int Semiconduct Corp Method of selective growth of a hemispherical grain silicon layer on the outer sides of a crown shaped DRAM capacitor structure
US6046083A (en) * 1998-06-26 2000-04-04 Vanguard International Semiconductor Corporation Growth enhancement of hemispherical grain silicon on a doped polysilicon storage node capacitor structure, for dynamic random access memory applications
KR100292938B1 (ko) * 1998-07-16 2001-07-12 윤종용 고집적디램셀커패시터및그의제조방법
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JP2000183311A (ja) * 1998-12-17 2000-06-30 Nec Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
KR20000022801A (ko) 2000-04-25
US20030038325A1 (en) 2003-02-27
JP4024940B2 (ja) 2007-12-19
TW447113B (en) 2001-07-21
JP2000156476A (ja) 2000-06-06
US6717202B2 (en) 2004-04-06
US6524927B1 (en) 2003-02-25
JP2000156475A (ja) 2000-06-06

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