TW447113B - Semiconductor device and the manufacturing method thereof - Google Patents
Semiconductor device and the manufacturing method thereof Download PDFInfo
- Publication number
- TW447113B TW447113B TW088113539A TW88113539A TW447113B TW 447113 B TW447113 B TW 447113B TW 088113539 A TW088113539 A TW 088113539A TW 88113539 A TW88113539 A TW 88113539A TW 447113 B TW447113 B TW 447113B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- silicon
- semiconductor device
- silicon film
- patent application
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 120
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 155
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 148
- 239000010703 silicon Substances 0.000 claims abstract description 146
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 110
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 96
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 84
- 239000013078 crystal Substances 0.000 claims abstract description 77
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 77
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 69
- 230000008569 process Effects 0.000 claims description 47
- 239000012535 impurity Substances 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 45
- 238000003860 storage Methods 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 230000002079 cooperative effect Effects 0.000 claims description 18
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 229910021332 silicide Inorganic materials 0.000 claims description 14
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 14
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000010937 tungsten Substances 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 8
- 150000002736 metal compounds Chemical class 0.000 claims description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000010941 cobalt Substances 0.000 claims description 6
- 229910017052 cobalt Inorganic materials 0.000 claims description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- -1 tungsten nitride Chemical class 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 3
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 3
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 2
- 230000003746 surface roughness Effects 0.000 claims description 2
- 239000011856 silicon-based particle Substances 0.000 claims 8
- 239000008186 active pharmaceutical agent Substances 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 16
- 239000003990 capacitor Substances 0.000 abstract description 15
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 150000003376 silicon Chemical class 0.000 abstract 1
- 239000010408 film Substances 0.000 description 518
- 239000010410 layer Substances 0.000 description 71
- 229920002120 photoresistant polymer Polymers 0.000 description 34
- 229910052581 Si3N4 Inorganic materials 0.000 description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 23
- 238000005530 etching Methods 0.000 description 21
- 230000002093 peripheral effect Effects 0.000 description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 14
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 13
- 239000004576 sand Substances 0.000 description 13
- 239000007789 gas Substances 0.000 description 12
- 230000002829 reductive effect Effects 0.000 description 12
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 10
- 238000001312 dry etching Methods 0.000 description 10
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 9
- 239000002994 raw material Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910052770 Uranium Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000000875 corresponding effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 240000002834 Paulownia tomentosa Species 0.000 description 1
- 235000010678 Paulownia tomentosa Nutrition 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000003868 ammonium compounds Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000009036 growth inhibition Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H10D1/712—Electrodes having non-planar surfaces, e.g. formed by texturisation being rough surfaces, e.g. using hemispherical grains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10251308A JP2992516B1 (ja) | 1998-09-04 | 1998-09-04 | 半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW447113B true TW447113B (en) | 2001-07-21 |
Family
ID=17220884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW088113539A TW447113B (en) | 1998-09-04 | 1999-08-07 | Semiconductor device and the manufacturing method thereof |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6524927B1 (enExample) |
| JP (2) | JP2992516B1 (enExample) |
| KR (1) | KR20000022801A (enExample) |
| TW (1) | TW447113B (enExample) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3173481B2 (ja) | 1998-11-25 | 2001-06-04 | 日本電気株式会社 | スタック電極を有する半導体装置及びその製造方法 |
| JP2000183311A (ja) | 1998-12-17 | 2000-06-30 | Nec Corp | 半導体装置及びその製造方法 |
| JP3246476B2 (ja) | 1999-06-01 | 2002-01-15 | 日本電気株式会社 | 容量素子の製造方法、及び、容量素子 |
| JP2002016237A (ja) * | 2000-06-27 | 2002-01-18 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
| JP2002026289A (ja) * | 2000-07-03 | 2002-01-25 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JP2002043547A (ja) * | 2000-07-28 | 2002-02-08 | Nec Kyushu Ltd | 半導体装置およびその製造方法 |
| JP3746669B2 (ja) * | 2000-10-17 | 2006-02-15 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| FR2819633B1 (fr) * | 2001-01-18 | 2003-05-30 | St Microelectronics Sa | Procede d'integration d'une memoire dram |
| KR100398580B1 (ko) * | 2001-02-22 | 2003-09-19 | 주식회사 하이닉스반도체 | 반도체 메모리 소자의 제조방법 |
| JP2002313951A (ja) * | 2001-04-11 | 2002-10-25 | Hitachi Ltd | 半導体集積回路装置及びその製造方法 |
| KR100404478B1 (ko) * | 2001-05-16 | 2003-11-05 | 주식회사 하이닉스반도체 | 반도체소자의 커패시터 형성방법 |
| US6458652B1 (en) * | 2001-08-20 | 2002-10-01 | Micron Technology, Inc. | Methods of forming capacitor electrodes |
| JP2003078028A (ja) * | 2001-08-31 | 2003-03-14 | Hitachi Ltd | 半導体装置およびその製造方法 |
| KR100418573B1 (ko) * | 2001-09-14 | 2004-02-11 | 주식회사 하이닉스반도체 | 반도체소자의 제조 방법 |
| JP2003273246A (ja) | 2002-03-19 | 2003-09-26 | Toshiba Corp | 半導体記憶装置、及びその製造方法 |
| KR100808558B1 (ko) * | 2002-05-16 | 2008-02-29 | 매그나칩 반도체 유한회사 | 엠아이엠 캐패시터 형성방법 |
| KR100808557B1 (ko) * | 2002-05-16 | 2008-02-29 | 매그나칩 반도체 유한회사 | 엠아이엠 캐패시터 형성방법 |
| JP2004140198A (ja) * | 2002-10-18 | 2004-05-13 | Oki Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| KR100620197B1 (ko) * | 2002-12-30 | 2006-09-01 | 동부일렉트로닉스 주식회사 | 반도체 소자의 모스형 트랜지스터 제조 방법 |
| US6964901B2 (en) * | 2003-06-03 | 2005-11-15 | Micron Technology, Inc. | Methods of forming rugged electrically conductive surfaces and layers |
| US7132201B2 (en) * | 2003-09-12 | 2006-11-07 | Micron Technology, Inc. | Transparent amorphous carbon structure in semiconductor devices |
| FR2871935A1 (fr) * | 2004-06-18 | 2005-12-23 | St Microelectronics Crolles 2 | Circuit integre comprenant un condensateur a elecrodes metalliques et procede de fabrication d'un tel condensateur |
| JP4470170B2 (ja) | 2004-11-30 | 2010-06-02 | エルピーダメモリ株式会社 | 半導体装置及びその製造方法 |
| JP2007053279A (ja) * | 2005-08-19 | 2007-03-01 | Elpida Memory Inc | 半導体装置の製造方法 |
| US7875959B2 (en) * | 2005-08-31 | 2011-01-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure having selective silicide-induced stress and a method of producing same |
| KR100806042B1 (ko) * | 2006-08-31 | 2008-02-26 | 동부일렉트로닉스 주식회사 | 반도체 소자 제조장치 및 이를 이용한 반도체 소자제조방법 |
| KR100864927B1 (ko) * | 2006-11-13 | 2008-10-23 | 동부일렉트로닉스 주식회사 | 반도체 소자의 엠아이엠 형성 방법 |
| DE102007002965A1 (de) * | 2007-01-19 | 2008-07-24 | Infineon Technologies Ag | Verfahren zur Herstellung einer kapazitiven Struktur oder Varistorstruktur in einem Graben eines Halbleiterkörper |
| KR101406225B1 (ko) * | 2008-04-11 | 2014-06-13 | 삼성전자주식회사 | 반도체 소자의 제조방법 |
| KR101096835B1 (ko) * | 2010-01-08 | 2011-12-22 | 주식회사 하이닉스반도체 | 반도체 소자의 형성 방법 |
| JP5731858B2 (ja) * | 2011-03-09 | 2015-06-10 | ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． | 半導体装置及び半導体装置の製造方法 |
| CN115382743B (zh) * | 2021-05-24 | 2023-08-22 | 成宏能源股份有限公司 | 形成具有涂层的结构的方法及具有涂层的结构 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3071268B2 (ja) | 1991-10-23 | 2000-07-31 | 沖電気工業株式会社 | 半導体装置の製造方法 |
| JP3071284B2 (ja) | 1991-12-20 | 2000-07-31 | 宮崎沖電気株式会社 | 半導体素子の製造方法 |
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| US6090679A (en) * | 1998-11-30 | 2000-07-18 | Worldwide Semiconductor Manufacturing Corporation | Method for forming a crown capacitor |
| JP2000183311A (ja) * | 1998-12-17 | 2000-06-30 | Nec Corp | 半導体装置及びその製造方法 |
-
1998
- 1998-09-04 JP JP10251308A patent/JP2992516B1/ja not_active Expired - Fee Related
- 1998-09-04 JP JP25151198A patent/JP4024940B2/ja not_active Expired - Fee Related
-
1999
- 1999-08-07 TW TW088113539A patent/TW447113B/zh not_active IP Right Cessation
- 1999-08-31 KR KR1019990036454A patent/KR20000022801A/ko not_active Withdrawn
- 1999-09-07 US US09/390,683 patent/US6524927B1/en not_active Expired - Fee Related
-
2002
- 2002-10-17 US US10/271,798 patent/US6717202B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20000022801A (ko) | 2000-04-25 |
| US20030038325A1 (en) | 2003-02-27 |
| JP4024940B2 (ja) | 2007-12-19 |
| JP2000156476A (ja) | 2000-06-06 |
| US6717202B2 (en) | 2004-04-06 |
| JP2992516B1 (ja) | 1999-12-20 |
| US6524927B1 (en) | 2003-02-25 |
| JP2000156475A (ja) | 2000-06-06 |
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