KR20000022801A - 반도체 장치 및 그 제조 방법 - Google Patents
반도체 장치 및 그 제조 방법 Download PDFInfo
- Publication number
- KR20000022801A KR20000022801A KR1019990036454A KR19990036454A KR20000022801A KR 20000022801 A KR20000022801 A KR 20000022801A KR 1019990036454 A KR1019990036454 A KR 1019990036454A KR 19990036454 A KR19990036454 A KR 19990036454A KR 20000022801 A KR20000022801 A KR 20000022801A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- silicon
- electrode
- semiconductor device
- silicon film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 115
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 142
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 139
- 239000010703 silicon Substances 0.000 claims abstract description 134
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 116
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 97
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 97
- 239000013078 crystal Substances 0.000 claims abstract description 66
- 239000003990 capacitor Substances 0.000 claims abstract description 56
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 77
- 239000000758 substrate Substances 0.000 claims description 50
- 239000012535 impurity Substances 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 46
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 238000000151 deposition Methods 0.000 claims description 20
- 229910021332 silicide Inorganic materials 0.000 claims description 16
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 16
- 239000012298 atmosphere Substances 0.000 claims description 13
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 239000011856 silicon-based particle Substances 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 11
- 229910052721 tungsten Inorganic materials 0.000 claims description 10
- 239000010937 tungsten Substances 0.000 claims description 10
- 239000003112 inhibitor Substances 0.000 claims description 8
- 150000002736 metal compounds Chemical class 0.000 claims description 8
- 239000010941 cobalt Substances 0.000 claims description 6
- 229910017052 cobalt Inorganic materials 0.000 claims description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 6
- 238000011049 filling Methods 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- -1 tungsten nitride Chemical class 0.000 claims description 5
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 3
- 229910021342 tungsten silicide Inorganic materials 0.000 claims description 3
- 230000005012 migration Effects 0.000 claims description 2
- 238000013508 migration Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 abstract description 19
- 239000002245 particle Substances 0.000 abstract description 3
- 230000001737 promoting effect Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 492
- 239000010410 layer Substances 0.000 description 58
- 229920002120 photoresistant polymer Polymers 0.000 description 27
- 238000005530 etching Methods 0.000 description 23
- 230000008569 process Effects 0.000 description 23
- 229910052581 Si3N4 Inorganic materials 0.000 description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 19
- 230000002093 peripheral effect Effects 0.000 description 17
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 16
- 238000003860 storage Methods 0.000 description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 14
- 238000001312 dry etching Methods 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 8
- 230000007423 decrease Effects 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 238000002955 isolation Methods 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 229960002050 hydrofluoric acid Drugs 0.000 description 6
- 230000002401 inhibitory effect Effects 0.000 description 6
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 6
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 5
- 239000002313 adhesive film Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000013500 data storage Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910008484 TiSi Inorganic materials 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 150000003376 silicon Chemical class 0.000 description 3
- 238000009279 wet oxidation reaction Methods 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000009036 growth inhibition Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 231100000105 margin of exposure Toxicity 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- ARLOROFIQUVYPY-UHFFFAOYSA-N silane silylsilane Chemical compound [SiH4].[SiH3][SiH3] ARLOROFIQUVYPY-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H10D1/712—Electrodes having non-planar surfaces, e.g. formed by texturisation being rough surfaces, e.g. using hemispherical grains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
- H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10251308A JP2992516B1 (ja) | 1998-09-04 | 1998-09-04 | 半導体装置の製造方法 |
| JP1998-251308 | 1998-09-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20000022801A true KR20000022801A (ko) | 2000-04-25 |
Family
ID=17220884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019990036454A Withdrawn KR20000022801A (ko) | 1998-09-04 | 1999-08-31 | 반도체 장치 및 그 제조 방법 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6524927B1 (enExample) |
| JP (2) | JP2992516B1 (enExample) |
| KR (1) | KR20000022801A (enExample) |
| TW (1) | TW447113B (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100713057B1 (ko) * | 2000-06-27 | 2007-05-02 | 엘피다 메모리, 아이엔씨. | 반도체 집적 회로 장치와 그 제조 방법 |
| KR100746541B1 (ko) * | 2000-10-17 | 2007-08-06 | 가부시키가이샤 히타치세이사쿠쇼 | 반도체 장치 및 그 제조 방법 |
| KR100806042B1 (ko) * | 2006-08-31 | 2008-02-26 | 동부일렉트로닉스 주식회사 | 반도체 소자 제조장치 및 이를 이용한 반도체 소자제조방법 |
| KR100808557B1 (ko) * | 2002-05-16 | 2008-02-29 | 매그나칩 반도체 유한회사 | 엠아이엠 캐패시터 형성방법 |
| KR100808558B1 (ko) * | 2002-05-16 | 2008-02-29 | 매그나칩 반도체 유한회사 | 엠아이엠 캐패시터 형성방법 |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3173481B2 (ja) | 1998-11-25 | 2001-06-04 | 日本電気株式会社 | スタック電極を有する半導体装置及びその製造方法 |
| JP2000183311A (ja) | 1998-12-17 | 2000-06-30 | Nec Corp | 半導体装置及びその製造方法 |
| JP3246476B2 (ja) | 1999-06-01 | 2002-01-15 | 日本電気株式会社 | 容量素子の製造方法、及び、容量素子 |
| JP2002026289A (ja) * | 2000-07-03 | 2002-01-25 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JP2002043547A (ja) * | 2000-07-28 | 2002-02-08 | Nec Kyushu Ltd | 半導体装置およびその製造方法 |
| FR2819633B1 (fr) * | 2001-01-18 | 2003-05-30 | St Microelectronics Sa | Procede d'integration d'une memoire dram |
| KR100398580B1 (ko) * | 2001-02-22 | 2003-09-19 | 주식회사 하이닉스반도체 | 반도체 메모리 소자의 제조방법 |
| JP2002313951A (ja) * | 2001-04-11 | 2002-10-25 | Hitachi Ltd | 半導体集積回路装置及びその製造方法 |
| KR100404478B1 (ko) * | 2001-05-16 | 2003-11-05 | 주식회사 하이닉스반도체 | 반도체소자의 커패시터 형성방법 |
| US6458652B1 (en) * | 2001-08-20 | 2002-10-01 | Micron Technology, Inc. | Methods of forming capacitor electrodes |
| JP2003078028A (ja) * | 2001-08-31 | 2003-03-14 | Hitachi Ltd | 半導体装置およびその製造方法 |
| KR100418573B1 (ko) * | 2001-09-14 | 2004-02-11 | 주식회사 하이닉스반도체 | 반도체소자의 제조 방법 |
| JP2003273246A (ja) | 2002-03-19 | 2003-09-26 | Toshiba Corp | 半導体記憶装置、及びその製造方法 |
| JP2004140198A (ja) * | 2002-10-18 | 2004-05-13 | Oki Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| KR100620197B1 (ko) * | 2002-12-30 | 2006-09-01 | 동부일렉트로닉스 주식회사 | 반도체 소자의 모스형 트랜지스터 제조 방법 |
| US6964901B2 (en) * | 2003-06-03 | 2005-11-15 | Micron Technology, Inc. | Methods of forming rugged electrically conductive surfaces and layers |
| US7132201B2 (en) * | 2003-09-12 | 2006-11-07 | Micron Technology, Inc. | Transparent amorphous carbon structure in semiconductor devices |
| FR2871935A1 (fr) * | 2004-06-18 | 2005-12-23 | St Microelectronics Crolles 2 | Circuit integre comprenant un condensateur a elecrodes metalliques et procede de fabrication d'un tel condensateur |
| JP4470170B2 (ja) | 2004-11-30 | 2010-06-02 | エルピーダメモリ株式会社 | 半導体装置及びその製造方法 |
| JP2007053279A (ja) * | 2005-08-19 | 2007-03-01 | Elpida Memory Inc | 半導体装置の製造方法 |
| US7875959B2 (en) * | 2005-08-31 | 2011-01-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure having selective silicide-induced stress and a method of producing same |
| KR100864927B1 (ko) * | 2006-11-13 | 2008-10-23 | 동부일렉트로닉스 주식회사 | 반도체 소자의 엠아이엠 형성 방법 |
| DE102007002965A1 (de) * | 2007-01-19 | 2008-07-24 | Infineon Technologies Ag | Verfahren zur Herstellung einer kapazitiven Struktur oder Varistorstruktur in einem Graben eines Halbleiterkörper |
| KR101406225B1 (ko) * | 2008-04-11 | 2014-06-13 | 삼성전자주식회사 | 반도체 소자의 제조방법 |
| KR101096835B1 (ko) * | 2010-01-08 | 2011-12-22 | 주식회사 하이닉스반도체 | 반도체 소자의 형성 방법 |
| JP5731858B2 (ja) * | 2011-03-09 | 2015-06-10 | ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． | 半導体装置及び半導体装置の製造方法 |
| CN115382743B (zh) * | 2021-05-24 | 2023-08-22 | 成宏能源股份有限公司 | 形成具有涂层的结构的方法及具有涂层的结构 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3071268B2 (ja) | 1991-10-23 | 2000-07-31 | 沖電気工業株式会社 | 半導体装置の製造方法 |
| JP3071284B2 (ja) | 1991-12-20 | 2000-07-31 | 宮崎沖電気株式会社 | 半導体素子の製造方法 |
| JPH11150249A (ja) * | 1997-11-16 | 1999-06-02 | Anelva Corp | 凹凸状ポリシリコン層の形成方法及びこの方法の実施に使用される基板処理装置並びに半導体メモリデバイス |
| JP3034377B2 (ja) | 1992-05-12 | 2000-04-17 | 宮崎沖電気株式会社 | 半導体素子におけるキャパシタ電極の製造方法 |
| US5208479A (en) * | 1992-05-15 | 1993-05-04 | Micron Technology, Inc. | Method of increasing capacitance of polycrystalline silicon devices by surface roughening and polycrystalline silicon devices |
| JP3039173B2 (ja) | 1993-01-06 | 2000-05-08 | 日本電気株式会社 | スタックト型ｄｒａｍのストレージノード電極の形成方法 |
| DE4419074C2 (de) * | 1993-06-03 | 1998-07-02 | Micron Semiconductor Inc | Verfahren zum gleichmäßigen Dotieren von polykristallinem Silizium mit halbkugelförmiger Körnung |
| US5340765A (en) * | 1993-08-13 | 1994-08-23 | Micron Semiconductor, Inc. | Method for forming enhanced capacitance stacked capacitor structures using hemi-spherical grain polysilicon |
| JP2595883B2 (ja) | 1993-12-01 | 1997-04-02 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5418180A (en) * | 1994-06-14 | 1995-05-23 | Micron Semiconductor, Inc. | Process for fabricating storage capacitor structures using CVD tin on hemispherical grain silicon |
| US5831282A (en) * | 1995-10-31 | 1998-11-03 | Micron Technology, Inc. | Method of producing an HSG structure using an amorphous silicon disorder layer as a substrate |
| US5801413A (en) * | 1995-12-19 | 1998-09-01 | Micron Technology, Inc. | Container-shaped bottom electrode for integrated circuit capacitor with partially rugged surface |
| JPH09213892A (ja) | 1996-02-05 | 1997-08-15 | Miyagi Oki Denki Kk | 半導体素子の製造方法 |
| JP2795313B2 (ja) * | 1996-05-08 | 1998-09-10 | 日本電気株式会社 | 容量素子及びその製造方法 |
| JPH09298284A (ja) | 1996-05-09 | 1997-11-18 | Nec Corp | 半導体容量素子の形成方法 |
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| KR100230363B1 (ko) * | 1996-06-28 | 1999-11-15 | 윤종용 | 반도체장치의 커패시터 제조방법 |
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| US6037219A (en) * | 1998-06-25 | 2000-03-14 | Vanguard International Semiconductor Corporation | One step in situ doped amorphous silicon layers used for selective hemispherical grain silicon formation for crown shaped capacitor applications |
| US5913119A (en) * | 1998-06-26 | 1999-06-15 | Vanguard Int Semiconduct Corp | Method of selective growth of a hemispherical grain silicon layer on the outer sides of a crown shaped DRAM capacitor structure |
| US6046083A (en) * | 1998-06-26 | 2000-04-04 | Vanguard International Semiconductor Corporation | Growth enhancement of hemispherical grain silicon on a doped polysilicon storage node capacitor structure, for dynamic random access memory applications |
| KR100292938B1 (ko) * | 1998-07-16 | 2001-07-12 | 윤종용 | 고집적디램셀커패시터및그의제조방법 |
| US6090679A (en) * | 1998-11-30 | 2000-07-18 | Worldwide Semiconductor Manufacturing Corporation | Method for forming a crown capacitor |
| JP2000183311A (ja) * | 1998-12-17 | 2000-06-30 | Nec Corp | 半導体装置及びその製造方法 |
-
1998
- 1998-09-04 JP JP10251308A patent/JP2992516B1/ja not_active Expired - Fee Related
- 1998-09-04 JP JP25151198A patent/JP4024940B2/ja not_active Expired - Fee Related
-
1999
- 1999-08-07 TW TW088113539A patent/TW447113B/zh not_active IP Right Cessation
- 1999-08-31 KR KR1019990036454A patent/KR20000022801A/ko not_active Withdrawn
- 1999-09-07 US US09/390,683 patent/US6524927B1/en not_active Expired - Fee Related
-
2002
- 2002-10-17 US US10/271,798 patent/US6717202B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100713057B1 (ko) * | 2000-06-27 | 2007-05-02 | 엘피다 메모리, 아이엔씨. | 반도체 집적 회로 장치와 그 제조 방법 |
| KR100746541B1 (ko) * | 2000-10-17 | 2007-08-06 | 가부시키가이샤 히타치세이사쿠쇼 | 반도체 장치 및 그 제조 방법 |
| KR100808557B1 (ko) * | 2002-05-16 | 2008-02-29 | 매그나칩 반도체 유한회사 | 엠아이엠 캐패시터 형성방법 |
| KR100808558B1 (ko) * | 2002-05-16 | 2008-02-29 | 매그나칩 반도체 유한회사 | 엠아이엠 캐패시터 형성방법 |
| KR100806042B1 (ko) * | 2006-08-31 | 2008-02-26 | 동부일렉트로닉스 주식회사 | 반도체 소자 제조장치 및 이를 이용한 반도체 소자제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20030038325A1 (en) | 2003-02-27 |
| JP4024940B2 (ja) | 2007-12-19 |
| TW447113B (en) | 2001-07-21 |
| JP2000156476A (ja) | 2000-06-06 |
| US6717202B2 (en) | 2004-04-06 |
| JP2992516B1 (ja) | 1999-12-20 |
| US6524927B1 (en) | 2003-02-25 |
| JP2000156475A (ja) | 2000-06-06 |
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