JP2000040679A5 - - Google Patents

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Publication number
JP2000040679A5
JP2000040679A5 JP1998209857A JP20985798A JP2000040679A5 JP 2000040679 A5 JP2000040679 A5 JP 2000040679A5 JP 1998209857 A JP1998209857 A JP 1998209857A JP 20985798 A JP20985798 A JP 20985798A JP 2000040679 A5 JP2000040679 A5 JP 2000040679A5
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JP
Japan
Prior art keywords
wafer
main surface
metal layer
integrated circuit
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP1998209857A
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English (en)
Japanese (ja)
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JP2000040679A (ja
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Publication date
Priority to JP10209857A priority Critical patent/JP2000040679A/ja
Application filed filed Critical
Priority claimed from JP10209857A external-priority patent/JP2000040679A/ja
Priority to TW088112316A priority patent/TW445534B/zh
Priority to US09/356,707 priority patent/US6376345B1/en
Priority to KR1019990029445A priority patent/KR100576630B1/ko
Publication of JP2000040679A publication Critical patent/JP2000040679A/ja
Priority to US10/050,562 priority patent/US6458674B1/en
Priority to US10/222,848 priority patent/US6531400B2/en
Priority to US10/369,716 priority patent/US6800557B2/en
Priority to US10/760,292 priority patent/US20040152298A1/en
Priority to KR1020040029620A priority patent/KR100683028B1/ko
Publication of JP2000040679A5 publication Critical patent/JP2000040679A5/ja
Priority to US11/357,181 priority patent/US7510970B2/en
Priority to US12/127,564 priority patent/US7659201B2/en
Priority to US12/700,784 priority patent/US8129275B2/en
Withdrawn legal-status Critical Current

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JP10209857A 1998-07-24 1998-07-24 半導体集積回路装置の製造方法 Withdrawn JP2000040679A (ja)

Priority Applications (12)

Application Number Priority Date Filing Date Title
JP10209857A JP2000040679A (ja) 1998-07-24 1998-07-24 半導体集積回路装置の製造方法
TW088112316A TW445534B (en) 1998-07-24 1999-07-20 Manufacture of semiconductor integrated circuit device
US09/356,707 US6376345B1 (en) 1998-07-24 1999-07-20 Process for manufacturing semiconductor integrated circuit device
KR1019990029445A KR100576630B1 (ko) 1998-07-24 1999-07-21 반도체 집적회로장치의 제조방법
US10/050,562 US6458674B1 (en) 1998-07-24 2002-01-18 Process for manufacturing semiconductor integrated circuit device
US10/222,848 US6531400B2 (en) 1998-07-24 2002-08-19 Process for manufacturing semiconductor integrated circuit device
US10/369,716 US6800557B2 (en) 1998-07-24 2003-02-21 Process for manufacturing semiconductor integrated circuit device
US10/760,292 US20040152298A1 (en) 1998-07-24 2004-01-21 Process for manufacturing semiconductor integrated circuit device
KR1020040029620A KR100683028B1 (ko) 1998-07-24 2004-04-28 반도체 집적회로장치의 제조방법
US11/357,181 US7510970B2 (en) 1998-07-24 2006-02-21 Process for manufacturing semiconductor integrated circuit device
US12/127,564 US7659201B2 (en) 1998-07-24 2008-05-27 Process for manufacturing semiconductor integrated circuit device
US12/700,784 US8129275B2 (en) 1998-07-24 2010-02-05 Process for manufacturing semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10209857A JP2000040679A (ja) 1998-07-24 1998-07-24 半導体集積回路装置の製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2003327905A Division JP2004104137A (ja) 2003-09-19 2003-09-19 半導体集積回路装置の製造方法
JP2004022381A Division JP4764604B2 (ja) 2004-01-30 2004-01-30 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JP2000040679A JP2000040679A (ja) 2000-02-08
JP2000040679A5 true JP2000040679A5 (enExample) 2004-12-24

Family

ID=16579782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10209857A Withdrawn JP2000040679A (ja) 1998-07-24 1998-07-24 半導体集積回路装置の製造方法

Country Status (4)

Country Link
US (8) US6376345B1 (enExample)
JP (1) JP2000040679A (enExample)
KR (2) KR100576630B1 (enExample)
TW (1) TW445534B (enExample)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000040679A (ja) * 1998-07-24 2000-02-08 Hitachi Ltd 半導体集積回路装置の製造方法
US6572453B1 (en) * 1998-09-29 2003-06-03 Applied Materials, Inc. Multi-fluid polishing process
JP3693847B2 (ja) 1999-03-26 2005-09-14 Ｎｅｃエレクトロニクス株式会社 研磨後ウェハの保管方法および装置
JP2000311876A (ja) * 1999-04-27 2000-11-07 Hitachi Ltd 配線基板の製造方法および製造装置
KR20020019056A (ko) * 1999-06-01 2002-03-09 히가시 데쓰로 반도체 장치의 제조 방법 및 제조 장치
JP4554011B2 (ja) * 1999-08-10 2010-09-29 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP4513145B2 (ja) * 1999-09-07 2010-07-28 ソニー株式会社 半導体装置の製造方法および研磨方法
EP1093161A1 (en) * 1999-10-12 2001-04-18 Applied Materials, Inc. Method and composite arrangement inhibiting corrosion of a metal layer following chemical mechanical polishing
JP3705724B2 (ja) 1999-11-19 2005-10-12 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
JP2001274123A (ja) * 2000-03-27 2001-10-05 Matsushita Electric Ind Co Ltd 基板研磨装置及び基板研磨方法
JP3510562B2 (ja) * 2000-04-28 2004-03-29 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法及び処理装置
US6645550B1 (en) * 2000-06-22 2003-11-11 Applied Materials, Inc. Method of treating a substrate
WO2001099168A1 (fr) * 2000-06-23 2001-12-27 Fujitsu Limited Dispositif a semi-conducteur et procede de fabrication associe
US7170115B2 (en) * 2000-10-17 2007-01-30 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit device and method of producing the same
JP4535629B2 (ja) * 2001-02-21 2010-09-01 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2002319556A (ja) * 2001-04-19 2002-10-31 Hitachi Ltd 半導体集積回路装置の製造方法
JP4803625B2 (ja) * 2001-09-04 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US6579798B2 (en) * 2001-09-24 2003-06-17 Texas Instruments Incorporated Processes for chemical-mechanical polishing of a semiconductor wafer
JP2003218084A (ja) * 2002-01-24 2003-07-31 Nec Electronics Corp 除去液、半導体基板の洗浄方法および半導体装置の製造方法
US20030154999A1 (en) * 2002-02-20 2003-08-21 Taiwan Semiconductor Manufacturing Co., Ltd. Method for preventing chemical attack on a copper containing semiconductor wafer
JP2003318151A (ja) * 2002-04-19 2003-11-07 Nec Electronics Corp 半導体装置の製造方法
TWI288443B (en) 2002-05-17 2007-10-11 Semiconductor Energy Lab SiN film, semiconductor device, and the manufacturing method thereof
US6787470B2 (en) * 2002-05-17 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd Sacrificial feature for corrosion prevention during CMP
JP2004063589A (ja) * 2002-07-25 2004-02-26 Ebara Corp ポリッシング装置
JP2004186493A (ja) * 2002-12-04 2004-07-02 Matsushita Electric Ind Co Ltd 化学的機械研磨方法及び化学的機械研磨装置
US6936534B2 (en) * 2003-09-17 2005-08-30 Micron Technology, Inc. Method for the post-etch cleaning of multi-level damascene structures having underlying copper metallization
JP3909850B2 (ja) * 2003-11-07 2007-04-25 京セラミタ株式会社 電子写真感光体および画像形成装置
US7700477B2 (en) * 2004-02-24 2010-04-20 Panasonic Corporation Method for fabricating semiconductor device
US8159478B2 (en) * 2004-09-27 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device using the same
US7863188B2 (en) * 2005-07-29 2011-01-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7521266B2 (en) * 2005-11-16 2009-04-21 Taiwan Semiconductor Manufacturing Company, Ltd. Production and packaging control for repaired integrated circuits
JP2008091698A (ja) * 2006-10-03 2008-04-17 Matsushita Electric Ind Co Ltd 基板処理装置および基板処理方法
US20090029490A1 (en) * 2007-07-26 2009-01-29 Baiocchi Frank A Method of fabricating an electronic device
US8231431B2 (en) * 2008-01-24 2012-07-31 Applied Materials, Inc. Solar panel edge deletion module
JP5291991B2 (ja) * 2008-06-10 2013-09-18 株式会社日立製作所 半導体装置およびその製造方法
US7838425B2 (en) * 2008-06-16 2010-11-23 Kabushiki Kaisha Toshiba Method of treating surface of semiconductor substrate
DE102009030292B4 (de) * 2009-06-24 2011-12-01 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
US8384214B2 (en) * 2009-10-13 2013-02-26 United Microelectronics Corp. Semiconductor structure, pad structure and protection structure
JP5404361B2 (ja) 2009-12-11 2014-01-29 株式会社東芝 半導体基板の表面処理装置及び方法
US8808459B1 (en) * 2010-09-01 2014-08-19 WD Media, LLC Method for cleaning post-sputter disks using tape and diamond slurry
CN102402635B (zh) * 2010-09-19 2014-03-05 复旦大学 一种针对耦合电容影响的化学机械抛光工艺哑元金属填充方法
US20120090648A1 (en) * 2010-10-15 2012-04-19 United Microelectronics Corp. Cleaning method for semiconductor wafer and cleaning device for semiconductor wafer
CN102485424B (zh) * 2010-12-03 2015-01-21 中芯国际集成电路制造(北京)有限公司 抛光装置及其异常处理方法
US9530676B2 (en) 2011-06-01 2016-12-27 Ebara Corporation Substrate processing apparatus, substrate transfer method and substrate transfer device
WO2013089502A1 (en) * 2011-12-16 2013-06-20 Lg Siltron Inc. Apparatus and method for polishing wafer
JP6128941B2 (ja) * 2013-05-10 2017-05-17 ルネサスエレクトロニクス株式会社 半導体装置の製造方法及び半導体製造装置
CN108203074B (zh) * 2016-12-19 2020-07-07 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制备方法
US11573189B2 (en) * 2019-01-11 2023-02-07 Microchip Technology Incorporated Systems and methods for monitoring copper corrosion in an integrated circuit device

Family Cites Families (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62124866A (ja) 1985-10-28 1987-06-06 Hitachi Ltd 研磨装置
JPH01164039A (ja) 1987-12-21 1989-06-28 Nec Corp 半導体基板自動洗浄装置
US5084071A (en) 1989-03-07 1992-01-28 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
JP2655616B2 (ja) 1989-03-29 1997-09-24 信越半導体株式会社 半導体ウェーハの洗浄方法
US5144498A (en) 1990-02-14 1992-09-01 Hewlett-Packard Company Variable wavelength light filter and sensor system
JP3105902B2 (ja) 1990-06-19 2000-11-06 株式会社東芝 表面処理方法および表面処理装置
JPH0770504B2 (ja) * 1990-12-26 1995-07-31 信越半導体株式会社 ウエーハのハンドリング方法及び装置
US5139571A (en) 1991-04-24 1992-08-18 Motorola, Inc. Non-contaminating wafer polishing slurry
JPH0547735A (ja) 1991-08-20 1993-02-26 Tadahiro Omi 洗浄装置
US6146135A (en) 1991-08-19 2000-11-14 Tadahiro Ohmi Oxide film forming method
US5240749A (en) * 1991-08-27 1993-08-31 University Of Central Florida Method for growing a diamond thin film on a substrate by plasma enhanced chemical vapor deposition
JP2885616B2 (ja) 1992-07-31 1999-04-26 株式会社東芝 半導体装置およびその製造方法
US5480748A (en) 1992-10-21 1996-01-02 International Business Machines Corporation Protection of aluminum metallization against chemical attack during photoresist development
US5602246A (en) 1992-11-25 1997-02-11 Schering Aktiengesellschaft Process for the preparation of fludarabine or fludarabine phosphate from guanosine
JPH06188203A (ja) 1992-12-21 1994-07-08 Hitachi Ltd 結晶成長装置
JP3314099B2 (ja) * 1993-02-26 2002-08-12 ジャパン メンブレン テクノロジー株式会社 フィルターとその製造方法ならびにその使用方法
JPH06252144A (ja) 1993-03-01 1994-09-09 Matsushita Electron Corp 半導体装置の製造方法
US5607718A (en) 1993-03-26 1997-03-04 Kabushiki Kaisha Toshiba Polishing method and polishing apparatus
JP3187216B2 (ja) 1993-09-17 2001-07-11 株式会社東芝 半導体装置の製造方法
JP3172008B2 (ja) 1993-09-17 2001-06-04 株式会社東芝 半導体装置の製造方法
US5575837A (en) 1993-04-28 1996-11-19 Fujimi Incorporated Polishing composition
JP3238536B2 (ja) * 1993-06-30 2001-12-17 株式会社岡本工作機械製作所 半導体ウエハのカセット内保管方法
US5340370A (en) 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
JP3326642B2 (ja) * 1993-11-09 2002-09-24 ソニー株式会社 基板の研磨後処理方法およびこれに用いる研磨装置
JP3132284B2 (ja) * 1994-03-22 2001-02-05 三菱マテリアル株式会社 ウエハの製造装置
DE69533245D1 (de) 1994-03-25 2004-08-19 Nec Electronics Corp Vorrichtung zur elektrolytischen Behandlung
JP2743822B2 (ja) 1994-03-25 1998-04-22 日本電気株式会社 電解活性水処理装置
JP2737643B2 (ja) 1994-03-25 1998-04-08 日本電気株式会社 電解活性水の生成方法および生成装置
JP3397501B2 (ja) 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
JPH0864594A (ja) 1994-08-18 1996-03-08 Sumitomo Metal Ind Ltd 配線の形成方法
US5527423A (en) 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5602423A (en) 1994-11-01 1997-02-11 Texas Instruments Incorporated Damascene conductors with embedded pillars
JPH08238463A (ja) 1995-03-03 1996-09-17 Ebara Corp 洗浄方法及び洗浄装置
JP3311203B2 (ja) 1995-06-13 2002-08-05 株式会社東芝 半導体装置の製造方法及び半導体製造装置、半導体ウェーハの化学的機械的ポリッシング方法
KR0165413B1 (ko) * 1995-07-18 1999-02-01 이대원 패턴 에칭 방법
JP3329644B2 (ja) 1995-07-21 2002-09-30 株式会社東芝 研磨パッド、研磨装置及び研磨方法
KR100487590B1 (ko) 1995-08-21 2005-08-04 가부시키가이샤 에바라 세이사꾸쇼 폴리싱장치
US5573633A (en) * 1995-11-14 1996-11-12 International Business Machines Corporation Method of chemically mechanically polishing an electronic component
JPH09213699A (ja) 1996-02-06 1997-08-15 Tokyo Electron Ltd 多層配線半導体装置の配線形成方法
KR100198678B1 (ko) * 1996-02-28 1999-06-15 구본준 금속 배선 구조 및 형성방법
JP3333684B2 (ja) * 1996-03-15 2002-10-15 東京エレクトロン株式会社 研磨処理方法
JP3211147B2 (ja) 1996-05-29 2001-09-25 株式会社荏原製作所 装置の排気構造
JPH1092781A (ja) 1996-06-04 1998-04-10 Ebara Corp 基板の搬送方法及び装置
US6221171B1 (en) 1996-06-04 2001-04-24 Ebara Corporation Method and apparatus for conveying a workpiece
US6082373A (en) * 1996-07-05 2000-07-04 Kabushiki Kaisha Toshiba Cleaning method
DE19732433A1 (de) 1996-07-29 1998-02-12 Mitsubishi Material Silicon Verfahren und Gerät zum Polieren von Schrägkanten von Halbleiterwafern
KR980012019A (ko) * 1996-07-29 1998-04-30 김광호 웨이퍼 세정장치 및 세정방법
KR980012026A (ko) * 1996-07-29 1998-04-30 김광호 연마공정 후처리용 세정장치 및 이를 이용한 세정방법
JP3649531B2 (ja) 1996-08-06 2005-05-18 三菱マテリアル株式会社 半導体ウェーハの面取り面研磨装置
JP2800802B2 (ja) * 1996-09-20 1998-09-21 日本電気株式会社 半導体ウェハーのｃｍｐ装置
JPH10154709A (ja) * 1996-09-25 1998-06-09 Toshiba Corp 半導体装置の製造方法
US5972792A (en) * 1996-10-18 1999-10-26 Micron Technology, Inc. Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad
JPH10128655A (ja) 1996-10-31 1998-05-19 Toshiba Corp 研磨装置
US5854140A (en) * 1996-12-13 1998-12-29 Siemens Aktiengesellschaft Method of making an aluminum contact
TW408433B (en) * 1997-06-30 2000-10-11 Hitachi Ltd Method for fabricating semiconductor integrated circuit
US6068879A (en) * 1997-08-26 2000-05-30 Lsi Logic Corporation Use of corrosion inhibiting compounds to inhibit corrosion of metal plugs in chemical-mechanical polishing
JPH1183809A (ja) 1997-09-05 1999-03-26 Chiyuuden Kankyo Technos Kk 廃液回収・省力型磁粉探傷検査方法および装置
US6165956A (en) * 1997-10-21 2000-12-26 Lam Research Corporation Methods and apparatus for cleaning semiconductor substrates after polishing of copper film
JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6117784A (en) * 1997-11-12 2000-09-12 International Business Machines Corporation Process for integrated circuit wiring
US6153043A (en) * 1998-02-06 2000-11-28 International Business Machines Corporation Elimination of photo-induced electrochemical dissolution in chemical mechanical polishing
US6140230A (en) 1998-02-19 2000-10-31 Micron Technology, Inc. Methods of forming metal nitride and silicide structures
JPH11251317A (ja) 1998-03-04 1999-09-17 Hitachi Ltd 半導体装置の製造方法および製造装置
JP2000040679A (ja) * 1998-07-24 2000-02-08 Hitachi Ltd 半導体集積回路装置の製造方法
JP4008586B2 (ja) * 1998-08-09 2007-11-14 エムテック株式会社 ワークのエッジの研摩装置
US6468909B1 (en) * 1998-09-03 2002-10-22 Micron Technology, Inc. Isolation and/or removal of ionic contaminants from planarization fluid compositions using macrocyclic polyethers and methods of using such compositions
US6461226B1 (en) * 1998-11-25 2002-10-08 Promos Technologies, Inc. Chemical mechanical polishing of a metal layer using a composite polishing pad
US6140239A (en) * 1998-11-25 2000-10-31 Advanced Micro Devices, Inc. Chemically removable Cu CMP slurry abrasive
US6413871B2 (en) * 1999-06-22 2002-07-02 Applied Materials, Inc. Nitrogen treatment of polished halogen-doped silicon glass
US6274478B1 (en) * 1999-07-13 2001-08-14 Motorola, Inc. Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process
US6432823B1 (en) * 1999-11-04 2002-08-13 International Business Machines Corporation Off-concentric polishing system design
US6429130B1 (en) * 1999-11-29 2002-08-06 Taiwan Semiconductor Manufacturing Co., Ltd Method and apparatus for end point detection in a chemical mechanical polishing process using two laser beams
TWI227012B (en) * 2000-01-12 2005-01-21 Hitachi Ltd A method of manufacturing an optical disk substrate, an apparatus of manufacturing an optical disk and an optical disk substrate
KR100338777B1 (ko) * 2000-07-22 2002-05-31 윤종용 화학 기계적 연마 이후의 구리층 부식을 방지하는 반도체장치 제조방법 및 이에 이용되는 화학 기계적 연마장치

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