EP2927716A1 - Härtbare harzzusammensetzung und bildsensorchpherstellungsverfahren und bildsensorchip damit - Google Patents

Härtbare harzzusammensetzung und bildsensorchpherstellungsverfahren und bildsensorchip damit Download PDF

Info

Publication number
EP2927716A1
EP2927716A1 EP13858244.0A EP13858244A EP2927716A1 EP 2927716 A1 EP2927716 A1 EP 2927716A1 EP 13858244 A EP13858244 A EP 13858244A EP 2927716 A1 EP2927716 A1 EP 2927716A1
Authority
EP
European Patent Office
Prior art keywords
dye
group
compound
resin composition
image sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP13858244.0A
Other languages
English (en)
French (fr)
Other versions
EP2927716A4 (de
Inventor
Toshihide Ezoe
Kazuto Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of EP2927716A1 publication Critical patent/EP2927716A1/de
Publication of EP2927716A4 publication Critical patent/EP2927716A4/de
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • H01L27/14621Colour filter arrangements
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00Compositions of unspecified macromolecular compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09BORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B57/00Other synthetic dyes of known constitution
    • C09B57/004Diketopyrrolopyrrole dyes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09BORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B67/00Influencing the physical, e.g. the dyeing or printing properties of dyestuffs without chemical reactions, e.g. by treating with solvents grinding or grinding assistants, coating of pigments or dyes; Process features in the making of dyestuff preparations; Dyestuff preparations of a special physical nature, e.g. tablets, films
    • C09B67/0001Post-treatment of organic pigments or dyes
    • C09B67/0004Coated particulate pigments or dyes
    • C09B67/0008Coated particulate pigments or dyes with organic coatings
    • C09B67/0013Coated particulate pigments or dyes with organic coatings with polymeric coatings
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D201/00Coating compositions based on unspecified macromolecular compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40Additives
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • G02B5/22Absorbing filters
    • G02B5/223Absorbing filters containing organic substances, e.g. dyes, inks or pigments
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14618Containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • H01L27/14623Optical shielding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • H01L27/14627Microlenses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • H01L27/14629Reflectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685Process for coatings or optical elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687Wafer level processing
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a curable resin composition, a production method of image sensor chip using the same, and an image sensor chip.
  • a CCD or CMOS image sensor chip (hereinafter, simply referred to as an "image sensor chip") which is a solid-state imaging device for color image is used in a video camera, a digital still camera, a cellular phone with camera function and the like. Since the solid-state imaging device uses a silicon photodiode having sensitivity to near infrared ray in the light receiving unit thereof, luminosity factor correction is required and an infrared ray cut filter is employed (for example, see Patent Document 1).
  • Patent Document 1 JP-A-2012-28620
  • an object of the invention is to provide a curable resin composition capable of producing an image sensor chip in which the color shading is suppressed.
  • another object of the invention is to provide a curable resin composition which can produce an image sensor chip in which a stack functioning as an infrared ray cut filter and including a layer containing a dye having a maximum absorption wavelength in a wavelength range from 600 to 850 nm (hereinafter, also simply referred to as a "dye-containing layer”), an infrared ray reflecting film and the like and a surface of a solid-state imaging device substrate are closely contacted with each other without a space and by which the incident angle dependence of light received can be suppressed, a production method of image sensor chip using the same, and an image sensor chip.
  • a stack functioning as an infrared ray cut filter and including a layer containing a dye having a maximum absorption wavelength in a wavelength range from 600 to 850 nm (hereinafter, also simply referred to as a "dye-containing layer"), an infrared ray reflecting film and the like and a surface of a solid-state imaging device substrate are closely
  • the invention has the configuration described below, and the objects of the invention described above are achieved thereby.
  • a curable resin composition capable of producing an image sensor chip in which the color shading is suppressed can be provided.
  • a curable resin composition which can produce an image sensor chip in which a stack functioning as an infrared ray cut filter and including a dye-containing layer, an infrared ray reflecting film and the like and a surface of a solid-state imaging device substrate are closely contacted with each other without a space and by which the incident angle dependence of light received can be suppressed, a production method of image sensor chip using the same, and an image sensor chip can be provided.
  • an alkyl group includes not only an alkyl group having no substituent (an unsubstituted alkyl group) but also an alkyl group having a substituent (a substituted alkyl group).
  • a viscosity value denotes a value at 25°C.
  • the curable resin composition according to the invention is capable of being coated on a solid-state imaging device substrate and contains a dye having a maximum absorption wavelength in a wavelength range from 600 to 850 nm.
  • the maximum absorption wavelength of the dye is based on a value obtained by measuring a film having a film thickness of 1 ⁇ m obtained by coating a solution prepared so as to have a content of the dye and a resin of 20% by mass based on the total solution using a spectrophotometer.
  • the curable resin composition according to the invention may be a heat-curable resin composition or a photocurable resin composition.
  • the solid-state imaging device substrate according to the invention preferably includes a color filter layer, a high refractive index layer and a low refractive index layer, as described later with reference to Fig. 1 and Fig. 2 .
  • the term "(meth)acrylate” represents acrylate and methacrylate
  • the term “(meth)acryl” represents acryl and methacryl
  • the term “(meth)acryloyl” represents acryloyl and methacryloyl.
  • the terms “monomer” and “monomer” have the same meaning.
  • the monomer in the invention is distinguished from an oligomer and a polymer and means a compound having a mass average molecular weight of 2,000 or less.
  • a polymerizable compound means a compound having a polymerizable group and may be a monomer or a polymer.
  • the polymerizable group means a group involved in a polymerization reaction.
  • the dye which can be used in the curable resin composition according to the invention is not particularly limited so long as it has a maximum absorption wavelength ( ⁇ max) in a wavelength range from 600 to 850 nm and preferably includes, for example, at least one kind selected from the group consisting of a pyrrolopyrrole, dye, a copper complex, a cyanine-based dye, a phthalocyanine-based dye, a quatenylene-based dye, an aminium-based dye, an imminium-based dye, an azo-based dye, an anthraquinone-based dye, a diimonium-based dye, a squarylium-based dye and a porphyrin-based dye.
  • ⁇ max maximum absorption wavelength
  • a pyrrolopyrrole dye, a copper complex, a cyanide-basted dye, a phthalocyanine-based dye or a quaterrylene-based dye is preferred, and a pyrrolopyrrole dye, a copper complex, a cyanine-based dye or a phthalocyanine-based dye is more preferred.
  • the dye at least one kind selected from the group consisting of a cyanine-based dye, a phthalocyanine-based dye, a quaterrylene-based dye, an aminium-based dye, an imminium-based dye, an azo-based dye, an anthraquinone-based dye, a diimonium-based dye, a squarylium-based dye and a porphyrin-based dye is also one preferred embodiment
  • soldering process in the production of electronic component and the like used in a cellular phone and the like, a conventional process wherein a solder is molten to attach to a substrate surface has been replacing with a so-called a solder reflow process.
  • solder reflow process ordinarily, after mounting components having a solder preliminarily printed on a substrate surface by means of printing or the like, soldering is performed in a reflow furnace.
  • This technique is advantageous in view of response to miniaturization of the electronic component and productivity, and is effective in the production of camera module which is reduced in size and weight
  • a member subjected to the process is required to have heat resistance capable of responding to the reflow temperature.
  • the pyrrolopyrrole dye and copper complex are preferred.
  • the shielding property to a near infrared ray having a wavelength around 700 nm is low so that a satisfactory result cannot be obtained.
  • the maximum absorption wavelength of the dye for use in the invention is preferably in a range from 600 to 800 nm, more preferably in a range from 640 to 770 nm, and particularly preferably in a range from 660 to 720 nm.
  • R 1a and R 1b each independently represents an alkyl group, an aryl group or a heteroaryl group.
  • R 2 and R 3 each independently represents a hydrogen atom or a substituent, and at least one of R 2 and R 3 is an electron withdrawing group, or R 2 and R 3 may be combined with each other to form a ring.
  • R 4 represents a hydrogen atom, an alkyl group, an aryl group, a heteroaryl group, a substituted boron or a metal atom, or R 4 may be covalently connected or coordinately connected with at least one of R 1a , R 1b and R 3 .
  • the alkyl group represented by each of R 1a and R 1b is preferably an alkyl group having from 1 to 30 carbon atoms, more preferably an alkyl group having from 1 to 20 carbon atoms, and particularly preferably an alkyl group having from 1 to 10 carbon atoms.
  • the aryl group represented by each of R 1a and R 1b is preferably an aryl group having from 6 to 30 carbon atoms, more preferably an aryl group having from 6 to 20 carbon atoms, and particularly preferably an aryl group having from 6 to 12 carbon atoms.
  • the heteroaryl group represented by each of R 1a and R 1b is preferably a heteroaryl group having from 1 to 30 carbon atoms, and more preferably a heteroaryl group having from 1 to 12 carbon atoms.
  • a hetero atom for example, a nitrogen atom, an oxygen atom and a sulfur atom are exemplified.
  • an aryl group having an alkoxy group having a branched alkyl group is preferred.
  • the alkyl group in the branched alkyl group preferably has from 3 to 30 carbon atoms, and more preferably has from 3 to 20 carbon atoms.
  • R 1a and R 1b for example, 4-(2-ethylhexyloxy)phenyl, 4-(2-methylbutyloxy)phenyl or 4-(2-octyldodecyloxy)phenyl is particularly preferred.
  • R 1a and R 1b may be the same or different from each other.
  • R 2 and R 3 each independently represents a hydrogen atom or a substituent T, and at least one of R 2 and R 3 is an electron withdrawing group, or R 2 and R 3 may be combined with each other to form a ring.
  • R 2 and R 3 each independently preferably represents a cyano group or a heterocyclic group.
  • the substituent T includes, for example, those described below.
  • An alkyl group (preferably having from 1 to 30 carbon atoms), an alkenyl group (preferably having from 2 to 30 carbon atoms), an alkynyl group (preferably having from 2 to 30 carbon atoms), an aryl group (preferably having from 6 to 30 carbon atoms), an amino group (preferably having from 0 to 30 carbon atoms), an alkoxy group (preferably having from 1 to 30 carbon atoms), an aryloxy group (preferably having from 6 to 30 carbon atoms), an aromatic heterocyclic oxy group (preferably having from 1 to 30 carbon atoms), an acyl group (preferably having from 1 to 30 carbon atoms), an alkoxycarbonyl group (preferably having from 2 to 30 carbon atoms), an aryloxycarbonyl group (preferably having from 7 to 30 carbon atoms), an acyloxy group (preferably having from 2 to 30 carbon atoms), an acylamino group (preferably having from 2 to 30 carbon atoms), an alkoxycarbonylamino group (preferably having from 2 to 30
  • R 2 and R 3 at least one of R 2 and R 3 is an electron withdrawing group.
  • a substituent having a positive Hammett's op value ordinarily functions as an electron withdrawing group.
  • the electron withdrawing group include a cyano group, an acyl group, an alkyloxycarbonyl group, an aryloxycarbonyl group, a sulfamoyl group, a sulfinyl group and a heterocyclic goup, and a cyano group is more preferred.
  • the electron withdrawing group may be further substituted.
  • a substituent having a Hammett's substituent constant op value of at least 0.2 or more can be exemplified as an electron withdrawing group.
  • the ⁇ p value is preferably 0.25 or more, more preferably 0.3 or more, and particularly preferably 0.35 or more.
  • the upper limit thereof is not particularly limited, and is preferably 0.80.
  • cyano group 0.66), a carboxyl group (-COOH: 0.45), an alkoxycarbonyl group (-COOMe: 0.45), an aryloxycarbonyl group (-COOPh: 0.44), a carbamoyl group (-CONH 2 : 0.36), an alkylcarbonyl group (-COMe: 0.50), an arylcarbonyl group (-COPh: 0.43), an alkylsulfonyl group (-SO 2 Me: 0.72) and an arylsulfonyl group (-SO 2 Ph: 0.68).
  • a cyano group is particularly preferred.
  • Me represents a methyl group
  • Ph represents a phenyl group.
  • the Hammett's substituent constant ⁇ value can refer to, for example, paragraphs 0017 to 0018 of JP-A-2011-68731 , and the contents thereof are incorporated into the specification.
  • R 2 and R 3 are combined with each other to form a ring, it is preferred to from a 5-membered to 7-membered ring (preferably a 5-membered or 6-membered ring).
  • a ring which is ordinarily used as an acidic nucleus in a merocyanine dye is preferred, and specific examples thereof can refer to, for example, paragraphs 0019 to 0021 of JP-A-2011-68731 , and the contents thereof are incorporated into the specification.
  • R 3 is particularly preferably a hetero ring.
  • R 3 is preferably quinoline, benzothiazole or naphthothiazole.
  • two groups represented by R 2 may be the same or different from each other, and two goups represented by R 3 may be the same or different from each other.
  • R 4 is the alkyl group, the aryl group or the heteroaryl group, these groups have the same meanings as those described for R 1a and R 1b , respectively and preferred groups are also the same.
  • the substituent has the same meaning as the substituent T described for R 2 and R 3 , and is preferably an alkyl group, an aryl group or a heteroaryl group.
  • the metal atom is preferably a transition metal, particularly preferably a substituted boron.
  • the substituted boron difluoro boron, diphenyl boron, dibutyl boron, dinaphthyl boron and catechol boron are preferably exemplified. Among them, diphenyl boron is particularly preferred.
  • R 4 may be covalently connected or coordinately connected with at least one of R 1a , R 1b and R 3 , and it is particularly preferred that R 4 is coordinately connected with R 3 .
  • R 4 is preferably a hydrogen atom or a substituted boron (particularly diphenyl boron).
  • two groups represented by R 4 may be the same or different from each other.
  • the compound represented by formula (A1) can refer to, for example, paragraphs 0024 to 0052 of JP-A-2011-68731 (corresponding to paragraphs 0043 to 0074 of U.S. Patent Publication No. 2011/0070407 ), and the contents thereof are incorporated into the specification.
  • R 10 each independently represents a hydrogen atom, an alkyl group, an aryl group, a heteroaryl group, a substituted boron or a metal atom, or R 10 may be covalently connected or coordinately connected with R 12 .
  • R 11 and R 12 each independently represents a hydrogen atom or a substituent, and at least one of R 11 and R 12 is an electron withdrawing group, or R 11 and R 12 may be combined with each other to form a ring.
  • R 13 each independently represents a branched alkyl group having from 3 to 30 carbon atoms.
  • R 10 has the same meanings as R 4 in formula (A1) above, and preferred ranges are also the same.
  • R 11 and R 12 have the same meanings as R 2 and R 3 in formula (A1) above, and preferred ranges are also the same.
  • R 13 may be the same or different from each other.
  • R 13 is preferably an alcohol residue derived, for example, from isoeicosanol (FINEOXOCOL 2000 produced by Nissan Chemical Industries, Ltd.).
  • the alcohol may be straight-chain or branched and is preferably an alcohol having from 1 to 30 carbon atoms, more preferably an alcohol having from 3 to 25 carbon atoms, and particularly preferably a branched alcohol having from 3 to 25 carbon atoms. More specifically, ethanol, ethanol, isopropanol, n-butanol, tert-butanol, 1-octanol, 1-decanol, 1-hexadecanol, 2-methylbutanol, 2-ethylhexanol, 2-octyldodecanol, isohexadecanol (FINEOXOCOL 1600 produced by Nissan Chemical Industries, Ltd.), isooctadecanol (FINEOXOCOL 180 produced by Nissan Chemical Industries, Ltd.), isooctadecanol (FINEOXOCOL 180N produced by Nissan Chemical Industries, Ltd.), isooctadecanol (FINEOXOCOL 180T produced by Nissan Chemical Industries, Ltd.),
  • R 20 each independently represents a branched alkyl group having from 3 to 30 carbon atoms.
  • R 20 has the same meanings as R 13 in formula (A2) above, and preferred ranges are also the same.
  • the ligand L coordinated to the copper is not particularly limited so long as it is able to coordinate with a copper ion, and includes, for example, a compound having sulfonic acid, carboxylic acid, phosphoric acid, a phosphoric acid ester, phosphonic acid, a phosphonic acid ester, phosphinic acid, a substituted phosphinic acid, a carbonyl (ester, ketone), an amine, an amide, a sulfonamide, a urethane, a urea, an alcohol, a thiol or the like.
  • the copper complex examples include a phosphorus-containing copper compound, a copper sulfonate compound and a copper compound represented by formula (B) shown below.
  • the phosphorus-containing copper compound specifically can refer to, for example, compounds described from line 27 on page 5 to line 20 on page 7 of WO 2005/030898 , and the contents thereof are incorporated into the specification.
  • X represents a ligand coordinated to the copper, and nl each independently represents an integer from 1 to 6.
  • the ligand X includes a ligand having a substituent containing C, N, O or S as an atom capable of coordinating to the copper, and is more preferably a ligand including a group having a lone pair, for example, N, O or S.
  • the group capable of coordinating is not limited to one kind in the molecule, two or more kinds thereof may be incorporated, and it may be dissociated or non-dissociated.
  • the copper complex is a copper compound in which ligands are coordinated to the copper as the central metal, and the copper is ordinarily a divalent copper.
  • the copper complex can be obtained, for example, by mixing, reacting and the like a compound for forming the ligand or a salt thereof with a copper component.
  • the compound for forming the ligand or a salt thereof is not particularly limited, and preferably includes, for example, an organic acid compound (for example, a sulfonic acid compound or a carboxylic acid compound) and a salt thereof
  • R 7 represents a monovalent organic group.
  • the monovalent organic group may have a substituent
  • the straight-chain or branched alkyl group is preferably an alkyl group having from 1 to 20 carbon atoms, more preferably an alkyl group having from 1 to 12 carbon atoms, and still more preferably an alkyl group having from 1 to 8 carbon atoms.
  • the cyclic alkyl group may be monocyclic or polycyclic.
  • the cyclic alkyl group is preferably a cycloalkyl group having from 3 to 20 carbon atoms, more preferably a cycloalkyl group having from 4 to 10 carbon atoms, and still more preferably a cycloalkyl group having from 6 to 10 carbon atoms.
  • the alkenyl group is preferably an alkenyl group having from 2 to 10 carbon atoms, more preferably an alkenyl group having from 2 to 8 carbon atoms, and still more preferably an alkenyl group having from 2 to 4 carbon atoms.
  • the aryl group is preferably an aryl group having from 6 to 18 carbon atoms, more preferably an aryl group having from 6 to 14 carbon atoms, and still more preferably an aryl group having from 6 to 10 carbon atoms.
  • the alkylene group, cycloalkylene group and arylene group as the divalent connecting group include divalent connecting groups derived by eliminating one hydrogen atom from the alkyl group, the cycloalkyl group and the aryl group described above, respectively.
  • the substituent which the monovalent organic group may have includes an alkyl group, a polymerizable group (for example, a vinyl group, a (meth)acryloyl group, an epoxy group or an oxetane group), a halogen atom, a carboxyl group, a carboxylic ester group (for example, -CO 2 CH 3 ), a hydroxy group, an amido group and a halogenated alkyl group (for example, a fluoroalkyl group or a chloroalkyl group).
  • a polymerizable group for example, a vinyl group, a (meth)acryloyl group, an epoxy group or an oxetane group
  • a halogen atom for example, a carboxyl group, a carboxylic ester group (for example, -CO 2 CH 3 ), a hydroxy group, an amido group and a halogenated alkyl group (for example, a fluoroalkyl group
  • the molecular weight of the sulfonic acid compound represented by formula (J) or the salt thereof is preferably from 80 to 750, more preferably from 80 to 600, and still more preferably from 80 to 450.
  • the sulfonic acid compound can be used a commercially available sulfonic acid compound or can be synthesized with reference to a known method.
  • the salt of the sulfonic acid compound includes, for example, a metal salt, and specifically includes, for example, a sodium salt and a potassium salt.
  • a copper complex containing a carboxylic acid as the ligand other than those described above a copper complex containing a compound represented by formula (K) shown below as the ligand can be used.
  • R 1 represents a monovalent organic group.
  • R 1 represents a monovalent organic group.
  • the monovalent organic group is not particularly limited, and, for example, has the same meaning as the monovalent organic group in formula (J) described above.
  • the copper complex may be a copper complex obtained by a reaction between a copper component and a compound represented by formula (II) shown below.
  • the copper component is not particularly limited so long as it is capable of forming a compound exhibiting a near infrared ray absorbing property by reacting with a polymer compound having a repeating unit represented by formula (II) shown below or a salt thereof (hereinafter, also simply referred to as a "compound represented by formula (II)”), and preferably includes copper hydroxide, copper acetate and copper sulfate.
  • the polymer compound or salt thereof, which is reacted with the copper component has a repeating unit represented by formula (II) shown below.
  • R 2 represents an organic group
  • Y 1 represents a single bond or a divalent connecting group
  • X 2 represents an acid group
  • R 2 is preferably, a group containing an aliphatic hydrocarbon group, an aromatic hydrocarbon group and/or an aromatic heterocyclic group.
  • the divalent connecting group includes a divalent hydrocarbon group, a heteroarylene group, -O-, -S-, -CO-, -COO-, -OCO-, -SO 2 -, -NX- (wherein X represents a hydrogen atom or an alkyl group, and is preferably a hydrogen atom), and a group formed by a combination of these groups.
  • the divalent hydrocarbon group includes a straight-chain, branched or cyclic alkylene group and an arylene group. Although the hydrocarbon group may have a substituent, it is preferred to be unsubstituted.
  • the carbon number of the straight-chain alkylene group is preferably from 1 to 30, more preferably from 1 to 15, and still more preferably from 1 to 6.
  • the carbon number of the branched alkylene group is preferably from 3 to 30, more preferably from 3 to 15, and still more preferably from 3 to 6.
  • the cyclic alkylene group may be monocyclic or polycyclic.
  • the carbon number of the cyclic alkylene group is preferably from 3 to 20, more preferably from 4 to 10, and still more preferably from 6 to 10.
  • the carbon number of the arylene group is preferably from 6 to 18, more preferably from 6 to 14, and still more preferably from 6 to 10.
  • a phenylene group is particularly preferred as the arylene group.
  • the heteroarylene group is preferably a 5-membered ring or a 6-membered ring.
  • the heteroarylene group may be monocyclic or polycyclic, and is preferably monocyclic or a condensed ring having from 2 to 8 rings, and more preferably monocyclic or a condensed ring having from 2 to 4 rings.
  • X 2 represents an acid group, and is preferably a carboxylic acid group or a sulfonic acid group, and more preferably a sulfonic acid group.
  • the polymer compound is a polymer containing a carbon-carbon bond in the main chain thereof, and preferably contains a repeating unit represented by formula (II-IA) shown below, and more preferably contains a repeating unit represented by formula (II-IB) shown below.
  • R 1 represents a hydrogen atom or a methyl group
  • L 1 represents a single bond or a divalent connecting group
  • X 1 represents an acid group
  • R 2 represents a hydrogen atom or a methyl group
  • L 2 represents a divalent connecting group
  • M 1 represents a hydrogen atom or an atom or atomic group constituting a salt with the sulfonic acid group.
  • R 1 and R 2 each independently preferably represents a hydrogen atom.
  • the divalent connecting group has the same meaning as the divalent connecting group represented by Y 1 described above, and preferred ranges are also the same.
  • X 1 has the same meaning as X 12 in formula (II) above, and preferred ranges are also the same.
  • M 1 is preferably a hydrogen atom.
  • the compounds represented by formula (II) may contain other repeating unit than the repeating unit represented by formula (II-1A) or the repeating unit represented by formula (II-1B).
  • the description of copolymerization component disclosed in paragraphs 0068 to 0075 of JP-A-2010-106268 (corresponding to paragraphs 0112 to 0118 of U.S. Patent Publication No. 2011/0124824 ) can be referred to, and the contents thereof are incorporated into the specification.
  • Preferred other repeating unit includes a repeating unit represented by formula (II-1C) shown below.
  • R 3 represents a hydrogen atom or a methyl group, and is preferably a hydrogen atom.
  • Y 2 represents a single bond or a divalent connecting group, and the divalent connecting group has the same meaning as the divalent connecting group represented by Y 1 described above.
  • Y 2 is preferably -COO-, -CO-, -HN-, a straight-chain or branched alkylene group, a group formed by a combination of these groups, or a single bond.
  • X 2 represents -PO 3 H, -PO 3 H 2 , -OH or -COOH, and is preferably -COOH.
  • a molar ratio of the repeating unit represented by formula (II-1A) or formula (II-1B) and the repeating unit represented by formula (II-1C) is preferably from 95:5 to 20:80, and more preferably from 90:10 to 40:60.
  • cyanine-based dye and the quaterrylene-based dye includes compounds described, for example, in JP-A-2012-215806 and JP-A-2008-9206 .
  • phthalocyanine compound examples include compounds described in JP-A-60-224589 , JP-T-2005-537319 , JP-A-4-23868 , JP-A-4-39361 , JP-A-5-78364 , JP-A-5-222047 , JP-A-5-222301 , JP-A-5-222302 , JP-A-5-345861 , JP-A-6-25548 , JP-A-6-107663 , JP-A-6-192584 , JP-A-6-228533 , JP-A-7-118551 , JP-A-7-118552 , JP-A-8-120186 , JP-A-8-225751 , JP-A-9-202860 , JP-A-10-120927 , JP-A-10-182995 , JP-A-11-35838 , JP-A-2000-26748 , JP-A-2000-63691 , JP-A-2001-2001
  • azo dye examples include compounds described, for example, in JP-A-2012-215806 .
  • the dye is also available as a commercial product, and for example, LUMOGEN IR765 and LUMOGEN IR788 (produced by BASF), ABS643, ABS654, ABS667, ABS670T, IRA693N and IRA735 (produced by Exciton, Inc.), SDA3598, SDA6075, SDA8030, SDA8303, SDA8470, SDA3039, SDA3040, SDA3922 and SDA7257 (produced by H.W.
  • the dye is preferably a fine particle.
  • the average particle size of the dye is preferably 800 nm or less, more preferably 400 nm or less, and still more preferably 200 nm or less.
  • the average particle size is preferred, but because of the ease of handling at the time of production and the like, the average particle size of the dye is ordinarily 1 nm or more.
  • the content of the dye is preferably from 0.05 to 90% by mass, more preferably from 0.5 to 80% by mass, based on the total solid content mass of the composition according to the invention.
  • the content of the copper complex is preferably 30% by mass or more, more preferably from 30 to 90% by mass, still more preferably from 40 to 90% by mass, particularly preferably from 50 to 90% by mass, based on the total solid content mass of the composition according to the invention.
  • the composition according to the invention further contains a polymerizable compound and a solvent described later and the content of the dye in the total solid content of the composition is 30% by mass or more.
  • the content of the dye is preferably from 0.01 to 20% by mass, more preferably from 0.5 to 10% by mass, based on the total solid content mass of the composition according to the invention.
  • two or more kinds of the dyes may be used.
  • the pyrrolopyrrole dye and the copper complex in combination from the standpoint of the heat resistance endurable the reflow process.
  • the dyes may be incorporated into the same layer or may be incorporated into different layers.
  • the curable resin composition according to the invention can be preferably constituted by containing at least one kind of polymerizable compounds.
  • the polymerizable compound a compound having two or more epoxy groups or oxetanyl groups in its molecule is preferably used.
  • the compound having two or more epoxy groups in its molecule as the polymerizable compound include a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a phenol novolac type epoxy resin, a cresol novolac type epoxy resin, and an aliphatic epoxy resin.
  • the bisphenol A type epoxy resin for example, JER-827, JER-828, JER-834, JER-1001, JER-1002, JER-1003, JER-1055, JER-1007, JER-1009 and JER-1010 (produced by Mitsubishi Chemical Corp.), and EPICLON 860, EPICLON 1050, EPICLON 1051 and EPICLON 1055 (produced by DIC Corp.) are exemplified, as the bisphenol F type epoxy resin, JER-806, JER-807, JER-4004, JER-4005, JER-4007, JER-4010 (produced by Mitsubishi Chemical Corp.), EPICLON 830 and EPICLON 835 (produced by DIC Corp.), and LCE-21 and RE-602S (produced by Nippon Kayaku Co., Ltd.) are exemplified, as the phenol novolak type epoxy resin, JER-152, JER-154, JER 157570 and JER 157565 (produced by Mitsubishi Chemical Corp.), and EPICLON 860
  • ADEKA RESIN EP-4000S, ADEKA RESIN EP-4003S, ADEKA RESIN EP-4010S and ADEKA RESIN EP-4011 S (produced by ADEKA Corp.), NC-2000, NC-3000, NC-7300, XD-1000, EPPN-501 and EPPN-502 (produced by ADEKA Corp.), JER-1031S (produced by Mitsubishi Chemical Corp.) and the like are exemplified.
  • the compounds may be used individually or in combination of two or more thereof.
  • Specific examples of the compound having two or more oxetanyl groups in its molecule include ARONOXETAN OXT-121, OXT-221, OX-SQ and PNOX (produced by Toagosei Co., Ltd.).
  • the compound containing oxetanyl groups is preferably used individually or in combination with the compound containing epoxy groups.
  • the polymerizable compound is also preferably selected from compounds having at least one terminal ethylenically unsaturated bond, preferably two or more terminal ethylenically unsaturated bonds.
  • the polymerizable compound may be used individually or in combination of two or more thereof in the invention.
  • any of the compound having two or more epoxy groups or oxetanyl groups in its molecule and the compound having at least one terminal ethylenically unsaturated bond, preferably two or more terminal ethylenically unsaturated bonds may be used individually, or the compound having two or more epoxy groups or oxetanyl groups in its molecule and the compound having at least one terminal ethylenically unsaturated bond, preferably two or more terminal ethylenically unsaturated bonds may be used in combination.
  • examples of the monomer and prepolymer thereof include an unsaturated carboxylic acid (for example, acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid or maleic acid), its esters and its amides, and multimers thereof.
  • unsaturated carboxylic acid for example, acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid or maleic acid
  • esters of an unsaturated carboxylic acid and an aliphatic polyhydric alcohol compound, amides of an unsaturated carboxylic acid and an aliphatic polyvalent amine compound, and multimers thereof are preferred
  • an addition reaction product of an unsaturated carboxylic acid ester or amide having a nucleophilic substituent, for example, a hydroxy group, an amino group or a mercapto group, with a monofunctional or polyfunctional isocyanate or epoxy compound, and a dehydration condensation reaction product of the unsaturated carboxylic acid ester or amide with a monofunctional or polyfunctional carboxylic acid may be also preferably used.
  • an addition reaction product of an unsaturated carboxylic acid ester or amide having an electrophilic substituent for example, an isocyanate group or an epoxy group, with a monofunctional or polyfunctional alcohol, amine or thiol
  • a substitution reaction product of an unsaturated carboxylic acid ester or amide having a releasable substituent for example, a halogen atom or a tosyloxy group, with a monofunctional or polyfunctional alcohol, amine or thiol
  • a vinylbenzene derivative for example, styrene, vinyl ether, allyl ether may also be used.
  • a compound having at least one addition-polymerizable ethylene group and having a boiling point of 100°C or more under normal pressure is also preferred as a polymerizable monomer.
  • a monofunctional acrylate or methacrylate for example, polyethylene glycol mono(meth)acrylate, polypropylene glycol mono(meth)acrylate or phenoxyethyl (meth)acrylate; a polyfunctional acrylate or methacrylate, for example, polyethylene glycol di(meth)acrylate, trimethylolethane tri(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, hexanedi
  • a polyfunctional (meth)acrylate obtained by reacting a polyfunctional carboxylic acid with a compound having a cyclic ether group and an ethylenically unsaturated group, for example, glycidyl (meth)acrylate is also exemplified.
  • compounds having a fluorene ring and difunctional or more ethylenically unsaturated groups described in JP-A-2010-160418 , JP-A-2010-129825 and Japanese Patent No. 4364216 , and a cardo resin may be also used.
  • radical polymerizable monomers represented by formulae (MO-1) to (MO-5) described in paragraphs 0297 to 0300 of JP-A-2012-215806 may also preferably used.
  • radical polymerizable monomers represented by formulae (MO-1) to (MO-5) compounds described in paragraphs 0248 to 0251 of JP-A-2007-269779 may also preferably used in the invention.
  • dipentaerythritol triacrylate (as a commercial product, KAYARAD D-330 produced by Nippon Kayaku Co., Ltd.), dipentaerythritol tetraacrylate (as a commercial product, KAYARAD D-320 produced by Nippon Kayaku Co., Ltd.), dipentaerythritol penta(meth)acrylate (as a commercial product, KAYARAD D-310, produced by Nippon Kayaku Co., Ltd.), dipentaerythritol hexa(meth)acrylate (as a commercial product, KAYARAD DPHA, produced by Nippon Kayaku Co., Ltd.), and structures where the (meth)acryloyl group of the compounds described above are connected through an ethylene glycol or propylene glycol residue are preferred. Oligomer types of these compounds may also be used.
  • the polymerizable compound may be a polyfunctional compound having an acid group, for example, a carboxyl group, sulfonic acid group or phosphoric acid group. Therefore, an ethylenic compound having an unreacted carboxyl group as in the case of the mixture described above may be used as it is, but, if desired, a non-aromatic carboxylic anhydride may be reacted with a hydroxy group of the ethylenic compound to introduce an acid group.
  • non-aromatic carboxylic anhydride examples include tetrahydrophthalic anhydride, an alkylated tetrahydrophthalic anhydride, hexahydrophthalic anhydride, an alkylated hexahydrophthalic anhydride, succinic anhydride and maleic anhydride.
  • the acid group-containing monomer is preferably a polyfunctional monomer which is an ester of an aliphatic polyhydroxy compound and an unsaturated carboxylic acid and obtained by reacting a non-aromatic carboxylic anhydride with an unreacted hydroxyl group of the aliphatic polyhydroxy compound to introduce the acid group, and particularly preferably the ester described above wherein the aliphatic polyhydroxy compound is pentaerythritol and/or dipentaerythritol.
  • the commercial product thereof include as a polybasic acid-modified acryl oligomer, M-305, M-510 and M-520 of ARONIX Series produced by Toagosei Co., Ltd.
  • One of the monomers may be used alone, but since it is difficult to use a single compound in view of production, two or more monomers may be used as a mixture.
  • a polyfunctional monomer having no acid group and an acid polyfunctional monomer having an acid group may be used in combination, if desired.
  • the acid value of the polyfunctional monomer having an acid group is preferably from 0.1 to 40 mg-KOH/g, and particularly preferably from 5 to 30 mg-KOH/g.
  • polymerizable monomer a polyfunctional monomer having a caprolactone structure described in described in paragraphs 0306 to 0313 of JP-A-2012-215806 may be used.
  • the polyfunctional monomer having a caprolactone structure is commercially available as KAYARAD DPCA Series from Nippon Kayaku Co., Ltd., and includes DPCA-20 (compound represented by formulae (1) to (3) described above, wherein m is 1, a number of the group represented by formula (2) is 2, and all of R 1 are hydrogen atoms), DPCA-30 (compound represented by formulae (1) to (3) described above, wherein m is 1, a number of the group represented by formula (2) is 3, and all of R 1 are hydrogen atoms), DPCA-60 (compound represented by formulae (1) to (3) described above, wherein m is 1, a number of the group represented by formula (2) is 6, and all of R 1 are hydrogen atoms) and DPCA-120 (compound represented by formulae (1) to (3) described above, wherein m is 2, a number of the group represented by formula (2) is 6, and all of R 1 are hydrogen atoms).
  • the polyfunctional monomers having a caprolactone structure may be used individually or as a mixture of two or more thereof in the invention.
  • Examples of commercial product of the polymerizable compounds represented by formulae (Z-4) and (Z-5) include SR-494, which is a tetrafunctional acrylate having four ethyleneoxy chains, produced by Sartomer Co., and DPCA-60, which is a hexafunctional acrylate having six pentyleneoxy chains and TPA-330, which is a trifunctional acrylate having three isobutyleneoxy chains, both produced by Nippon Kayaku Co., Ltd.
  • urethane acrylates as described in JP-B-48-41708 , JP-A-51-37193 , JP-B-2-32293 and JP-B-2-16765 , and urethane compounds having an ethylene oxide skeleton described in JP-B-58-49860 , JP-B-56-17654 , JP-B-62-39417 and JP-B-62-39418 are also preferable as the polymerizable compound.
  • an addition-polymerizable compound having an amino structure or a sulfide structure in the molecule thereof described in JP-A-63-277653 , JP-A-63-260909 and JP-A-1-105238 an addition-polymerizable compound having an amino structure or a sulfide structure in the molecule thereof described in JP-A-63-277653 , JP-A-63-260909 and JP-A-1-105238 , a curable composition very excellent in photosensitive speed can be obtained.
  • Examples of commercial product of the polymerizable compound include urethane oligomers UAS-10 and UAB-140 (produced by Sanyo Kokusaku Pulp Co., Ltd.), UA-7200 (produced by Shin-Nakamura Chemical Co., Ltd.), DPHA-40H (produced by Nippon Kayaku Co., Ltd.), UA-306H, UA-306T, UA-306I, AH-600, T-600 and AI-600 (produced by Kyoeisha Chemical Co., Ltd.).
  • a polyfunctional thiol compound having two or more mercapto (SH) groups in its molecule described in paragraphs 0216 to 0220 of JP-A-2012-150468 may also be used.
  • the polymerizable compound details of the method of using thereof, for example, the structure thereof, individual or combination use or the amount thereof added can be appropriately determined in accordance with the final characteristic design of the curable resin composition.
  • a structure having a large unsaturated group content per molecular is preferred, and in many cases, a difunctional or higher functional structure is preferred.
  • a trifunctional or higher functional compound is preferred.
  • a method of using compounds having different numbers of functional groups or different polymerizable groups for example, an acrylate, a methacrylate, a styrene-based compound or a vinyl ether-based compound) in combination to control both the sensitivity and the strength is also effective.
  • the selection and use method of the polymerizable compound are also important factors for the compatibility and dispersibility with other components (for example, a dye, a photopolymerization initiator or a binder) contained in the curable resin composition.
  • the compatibility can be sometimes improved by using a low-purity compound or using two or more kinds of compounds in combination.
  • a specific structure may be selected for the purpose of improving the adhesion property to a hard surface of a support or the like.
  • the content of the polymerizable compound in the curable resin composition according to the invention is preferably from 0.1 to 90% by mass, more preferably from 1.0 to 80% by mass, particularly preferably from 2.0 to 70% by mass, based on the solid content of the curable resin composition.
  • the curable resin composition according to the invention may contain a polymerization initiator.
  • the polymerization initiator is not particularly limited so long as it has a function of initiating polymerization of the polymerizable compound by either light or heat or both of them, and it can be appropriately selected according to the purpose, but it is preferably a photopolymerizable compound.
  • a compound having photosensitivity to light from an ultraviolet region to a visible region is preferred.
  • an initiator capable of being decomposed from 150 to 250°C is preferred.
  • the polymerization initiator which can be used in the invention is preferably a compound having at least an aromatic group, and includes, for example, an acyl phosphine compound, an acetophenone-based compound, an ⁇ -aminoketone compound, a benzophenone-based compound, a benzoin ether-based compound, a ketal derivative compound, a thioxanthone compound, an oxime compound, a hexaarylbiimidazole compound, a trihalomethyl compound, an azo compound, an organic peroxide, a diazonium compound, an iodonium compound, a sulfonium compound, an azinium compound, a benzoin ether-based compound, a ketal derivative compound, an onium salt compound, for example, a metallocene compound, an organic boron salt compound and a disulfone compound.
  • an acyl phosphine compound an acetophenone-based compound, an
  • an oxime compound an acetophenone-based compound, an ⁇ -aminoketone compound, a trihalomethyl compound, a hexaarylbiimidazole compound and a thiol compound are preferred.
  • the acetophenone-based compound specifically includes, for example,
  • a s-triazine derivative having at least one of mono-, di- or tri-halogen substituted methyl group connected to the s-triazine ring is more preferable, and specifically includes, for example,
  • the hexaarylbiimidazole compound includes various compounds described, for example, in JP-B-6-29285 and U.S. Patents 3,479,185 , 4,311,783 and 4,622,286 and specifically, for example,
  • the oxime compound includes, for example, compounds described in J. C. S. Perkin II (1979) 1653-1660 , J. C. S. Perkin II (1979) 156-162 , Journal of Photopolymer Science and Technology (1995) 202-232 and JP-A-2000-66385 , compounds described in JP-A-2000-80068 and JP-T-2004-534797 , and IRGACURE OXE 01 (1.2-octanedione, 1-[4-(phenylthio)-, 2-(O-benzoyl oxime)]), IRGACURE OXE 02 (ethanone, 1-[9-ethyl-6-(2- methylbenzoyl)-9H-carbazol-3-yl]-, 1-(O-acetyloxime)) and 2-(acetyloxyiminomethyl)thioxanthen-9-one (produced by BASF Japan Ltd.).
  • cyclic oxime compounds described in JP-A-2007-231000 and JP-2007-322744 are also preferably used.
  • an oxime compound having a specific substituent described in JP-A-2007-269779 or an oxime compound having a thioaryl group described in JP-2009-191061 is exemplified.
  • the photopolymerization initiator is more preferably a compound selected from the group consisting of an oxime compound, an acetophenone-based compound and an acyl phosphine compound. More specifically, for example, aminoacetophenone-based initiators described in JP-A-10-291969 , acyl phosphine oxide-based initiators described in Japanese Patent No. 4225898 , the oxime-based initiators described above, and as an oxime-based initiator, compounds described in JP-A-2001-233842 can be used.
  • acetophenone-based initiator commercial products, that is, IRGACURE-907, IRGACURE-369 and IRGACURE-379 (trade names, produced by BASF Japan Ltd.) can be used.
  • acyl phosphine-based initiator commercial products, that is, IRGACURE-819 or DAROCUR-TPO (trade names, produced by BASF Japan Ltd.) can be used.
  • the polymerization initiator may be used individually or may be used in combination of two or more thereof.
  • the content of polymerization initiator is preferably from 0.01 to 30% by mass, more preferably from 0.1 to 20% by mass, particularly preferably from 0.1 to 15% by mass, with respect to the total solid content mass of the polymerizable composition according to the invention.
  • the curable resin composition according to the invention may contain a binder.
  • the binder is not particularly limited, and it may be an alkali-soluble resin.
  • the alkali-soluble resin can be appropriately selected from alkali-soluble resins each of which is a liner organic high molecular polymer and contains at least one group accelerating alkali-solubility in its molecule (preferably, molecule in which a main chain is an acrylic copolymer or a styrene copolymer). From the standpoint of heat resistance, a polyhydroxystyrene-based resin, a polysiloxane-based resin, an acrylic resin, an acrylamide-based resin and an acrylic/acrylamide copolymer resin are preferred, and from the standpoint of controlling development property, an acrylic resin, an acrylamide-based resin and an acrylic/acrylamide copolymer resin are preferred.
  • alkali-soluble resin in particular, a benzyl (meth)acrylatel(meth)acrylic acid copolymer and a multicomponent copolymer composed of benzyl (meth)acrylate/(meth)acrylic acid/other monomer are preferred.
  • ACRYLBASE FF-187 and FF-426 are exempa commercial product.
  • the content of the binder in the curable resin composition is preferably from 1 to 20% by mass, more preferably from 2 to 15% by mass, particularly preferably from 3 to 12% by mass, based on the total solid content of the composition.
  • the curable resin composition according to the invention may further contain a filler.
  • the filler which can be used in the invention includes a spherical silica surface-treated with a silane coupling agent.
  • the polymerizable composition containing a filler according to the invention is preferred in view of obtaining an infrared ray cut filter having high durability.
  • the "spherical" as to the spherical filler is sufficient if the particle is not in an acicular, columnar or amorphous shape but is rounded, and the particle need not be necessarily “perfectly spherical", but a typical "spherical” shape is a "perfectly spherical” shape.
  • the volume average particle size of the primary particle of the filler is not particularly limited and may be appropriately selected according to the purpose, and is preferably from 0.05 to 3 ⁇ m, and more preferably from 0.1 to 1 ⁇ m.
  • the volume average particle size of the primary particle of the filler is in the range described above, reduction in the processability due to development of thixotropic property is suppressed and increase in the maximum particle size is prevented, which is advantageous in that the generation of defect caused by attachment of a foreign material to the infrared ray cut filter formed or unevenness of the coated layer is prevented.
  • the volume average particle size of the primary particle of the filler can be measured by a dynamic light scattering particle size distribution measuring device.
  • the filler can be dispersed by using the dispersing agent or binder described above.
  • the alkali-soluble binder polymer having a crosslinkable group in the side chain is particularly preferred from the standpoint of curability.
  • the surface treatment of the filler is described below.
  • the surface treatment of the filler is not particularly limited and may be appropriately selected according to the purpose, and a treatment of covering silica with a silane coupling agent is preferred.
  • the silane coupling agent used for the surface treatment of the filler is not particularly limited and may be appropriately selected according to the purpose, and it preferably has at least one functional group selected from an alkoxysilyl group, a chlorosilyl group and an acetoxysilyl group (hereinafter, also referred to as a "first functional group") and at least one functional group selected from a (meth)acryloyl group, an amino group and an epoxy group (hereinafter, also referred to as a "second functional group”).
  • the second functional group is more preferably a (meth)acryloyl group or an amino group, and still more preferably a (meth)acryloyl group. It is advantageous from the standpoint of preservation stability that the second functional group is a (meth)acryloyl group.
  • the silane coupling agent is not particularly limited and preferable examples thereof include ⁇ -aminopropyltriethoxysilane, N-( ⁇ -aminoethyl)- ⁇ -aminopropyltrimethoxysilane, N-( ⁇ -aminoethyl) ⁇ -aminopropylmethyldimethoxysilane, ⁇ -glycidoxypropyltrimethoxysilane, ⁇ -glycidoxypropylmethyldimethoxysilane, ⁇ -methacryloxypropyltrimethoxysilane, ⁇ -methacryloxypropylmethyldimethoxysilane, and ⁇ -[[3-(trimethoxysilyl)propoxy]methyl]imidazole-1-ethanol, 2-ethyl-4-methyl- ⁇ -[[3-(trimethoxysilyl)propoxy]methyl]imidazole-1-ethanol, 4-vinyl- ⁇ -[[3-(trimethoxysilyl)
  • the surface treatment of the spherical silica with the silane coupling agent may be previously performed only for the spherical silica (in this case, hereinafter, the treatment is also referred to as a "pretreatment") or may be performed together with a part or all of other fillers contained in the curable resin composition.
  • the method for performing the pretreatment is not particularly limited and examples thereof include a dry method, an aqueous solution method, an organic solvent method and a spraying method.
  • the temperature for performing the pretreatment is not particularly limited and is preferably from ordinary temperature to 200°C.
  • the catalyst is not particularly limited and examples thereof include an acid, a base, a metal compound and an organic metal compound.
  • the amount of the silane coupling agent added when performing the pretreatment is not particularly limited and is preferably from 0.01 to 50 parts by mass, more preferably from 0.05 to 50 parts by mass, per 100 parts by mass of the spherical silica.
  • the amount added is in the range described above, the surface treatment sufficient for exhibiting the effect is performed and reduction in the handling property resulting from aggregation of the spherical silica after the treatment is suppressed.
  • the silane coupling agent has an action of increasing the adhesion property between the substrate and the infrared ray cut filter, because the first functional group reacts with an active group on the substrate surface, on the spherical silica surface or in the binder, and further the second functional group reacts with a carboxyl group or an ethylenically unsaturated group in the binder.
  • the silane coupling agent has high reactivity and therefore, when the silane coupling agent itself is added to the polymerizable composition, due to its diffusing action, mainly the second functional group is reacted or deactivated during preservation to cause a decrease in shelf life or pot life in some cases.
  • the reaction rate between the first functional group of the silane coupling agent and the active group of the spherical silica can be significantly increased in comparison with the case of adding the spherical silica without performing the pretreatment Therefore, very good results can be obtained particularly in severe characteristics required, for example, electroless gold plating, electroless solder plating and humidity resistance load test. Also, by performing the pretreatment, the amount of the silane coupling agent used can be reduced and the shelf life and pot life can be more improved.
  • Examples of the spherical silica surface-treated with a silane coupling agent which can be used in the invention include FB and SFP Series of Denki Kagaku Kogyo Kabushiki Kaisha, 1-FX of Tatsumori Ltd., HSP Series of Toagosei Co., Ltd., and SP Series of Fuso Chemical Co., Ltd.
  • the curable resin composition may or may not contain the filler, and in the case where the curable resin composition contains the filler, although the content of the filler is not particularly limited and may be appropriately selected according to the purpose, it is preferably from 1 to 60% by mass based on the total solid content mass of the curable resin composition.
  • the content is in the range described above, a sufficient reduction in the linear expansion coefficient is achieved and the infrared ray cut filter formed is prevented from embrittlement and thus, its function as the infrared ray cut filter is sufficiently exerted.
  • the dye and the filler may be dispersed to use by employing a known dispersing agent for the purpose of enhancing dispersibility and dispersion stability thereof.
  • the dispersing agent which can be used in the invention includes a polymer dispersing agent (for example, polyamidoamine and salt thereof, polycarboxylic acid and salt thereof, a high molecular weight unsaturated acid ester, a modified polyurethane, a modified polyester, a modified poly(meth)acrylate, a (meth)acrylic copolymer or a naphthalenesulfonic acid-formalin condensate), and a surfactant, for example, a polyoxyethylene alkyl phosphate ester, a polyoxyethylene alkylamine or an alkanolamine.
  • a polymer dispersing agent for example, polyamidoamine and salt thereof, polycarboxylic acid and salt thereof, a high molecular weight unsaturated acid ester, a modified polyurethane, a modified polyester, a modified poly(meth)acrylate, a (meth)acrylic copolymer or a naphthalenesulfonic acid
  • the polymer dispersing agent can be further classified into a straight-chain polymer, a terminal-modified polymer, a graft polymer and a block polymer according to the structure thereof
  • terminal-modified polymer having an anchor moiety to the surface examples include polymers having a phosphoric acid group at the terminal described, for example, in JP-A-3-112992 and JP-T-2003-533455 , polymers having a sulfonic acid group at the terminal described, for example, in JP-A-2002-273191 , polymers having an organic dye partial structure or a heterocyclic ring described, for example, in JP-A-9-77994 , and polymers produced by modifying an oligomer or polymer having a hydroxy group or an amino group at one terminal with an acid anhydride described, for example, in JP-A-2008-29901 .
  • a polymer in which two or more anchor moieties (for example, an acid group, a basic group, an organic dye partial structure or a heterocyclic ring) to the surface of infrared ray shielding material are introduced into the polymer terminal described in JP-A-2007-277514 is also preferred because of its excellent dispersion stability.
  • Examples of the graft polymer having an anchor moiety to the surface include reaction products of a poly(lower alkylene imine) and a polyester described, for example, in JP-A-54-37082 , JP-T-8-507960 and JP-A-2009-258668 , reaction products of a polyallylamine and a polyester described, for example, in JP-A-9-169821 , amphoteric dispersing resins having a basic group and an acidic group described in JP-A-2009-203462 , copolymers of a macromonomer and a nitrogen atom-containing monomer described, for example, in JP-A-10-339949 and JP-A-2004-37986 , graft polymers having an organic dye partial structure or a heterocyclic ring described, for example, in JP-A-2003-238837 , JP-A-2008-9426 and JP-A-2008-81732 , and copolymers of a macromonomer and an
  • a known macromonomer may be used and examples thereof include MACROMONOMER AA-6 (polymethyl methacrylate having a terminal group of a methacryloyl group), AS-6 (polystyrene having a terminal group of a methacryloyl group), AN-6S
  • a polyester-based macromonomer excellent in flexibility and solvent affinity is particularly preferred from the standpoint of dispersibility and dispersion stability of the infrared ray shielding material in the composition, and a polyester-based macromonomer represented by the polyester-based macromonomer described in JP-A-2-272009 is most preferred.
  • block polymers having an anchor moiety to the surface block polymers described, for example, in JP-A-2003-49110 and JP-A-2009-52010 are preferred.
  • the dispersing agent which can be used may be appropriately selected, for example, from known dispersing agents and surfactants.
  • DISPERBYK 101 polyamidoamine phosphate
  • 107 carboxylic acid ester
  • 110 copolymer containing an acid group
  • 130 polyamide
  • 161, 162, 163, 164, 165, 166, 170 high molecular weight copolymer
  • BYK-P104 P105 (high molecular weight unsaturated polycarboxylic acid) produced by BYK Chemie GmbH
  • EFKA 4047, 4050-4010-4165 polyurethane-based
  • EFKA 4330-4340 block copolymer
  • 4400-4402 modified polyacrylate
  • 5010 polyyester amide
  • 5765 high molecular weight polycarboxylate
  • 6220 fatty acid polyester
  • 6745 phthalocyanine derivative
  • the dispersing agents may be used individually or in combination of two or more thereof.
  • the terminal-modified polymer, graft polymer or block polymer having an anchor moiety to the surface of the infrared ray shielding material may also be used in combination with an alkali-soluble resin.
  • alkali-soluble resin examples include a (meth)acrylic acid copolymer, an itaconic acid copolymer, a crotonic acid copolymer, a maleic acid copolymer, a partially esterified maleic acid copolymer, an acidic cellulose derivative having a carboxylic acid in its side chain and a resin obtained by modifying a hydroxy group-containing polymer with an acid anhydride, and particularly a (meth)acrylic acid copolymer is preferred.
  • a (meth)acrylic acid copolymer examples include a (meth)acrylic acid copolymer, an itaconic acid copolymer, a crotonic acid copolymer, a maleic acid copolymer, a partially esterified maleic acid copolymer, an acidic cellulose derivative having a carboxylic acid in its side chain and a resin obtained by modifying a hydroxy group-containing polymer with an acid anhydride, and particularly a (meth
  • N-position substituted maleimide monomer copolymers described in JP-A-10-300922 ether dimer copolymers described in JP-A-2004-300204 and polymerizable group-containing alkali-soluble resins described in JP-A-7-319161 are preferred.
  • resins described in JP-A-2010-106268 are preferred.
  • a polymer dispersing agent having a polyester chain in its side chain is preferred, and a resin having an acid group and a polyester chain is also preferably exemplified.
  • the acid group in the dispersing agent in view of adsorptivity, an acid group having a pKa of 6 or less is preferred, and particularly a carboxylic acid, a sulfonic acid or a phosphoric acid is preferred.
  • Specific examples of the resin include specific examples described in paragraphs 0078 to 0111 of JP-A-2010-106268 .
  • the curable resin composition according to the invention contains the polymerizable compound and the dispersing agent
  • the curable resin composition may or may not contain the dispersing agent, and in the case where curable resin composition contains the dispersing agent, the content of the dispersing agent in the composition is preferably from 1 to 90 % by mass, more preferably from 3 to 70% by mass, based on the mass of the dye contained in the composition.
  • the curable resin composition according to the invention may contain a sensitizer for the purpose of increasing the radical generating efficiency of the polymerization initiator and making the photosensitive wavelength longer.
  • the sensitizer which can be used in the invention is preferably a compound capable of sensitizing the photopolymerization initiator described above by an electron transfer mechanism or an energy transfer mechanism.
  • the sensitizer which can be used in the invention includes compounds belonging to compound groups described below and having an absorption wavelength in the wavelength region from 300 to 450 nm.
  • Preferred examples of the sensitizer include compounds belonging to the following compound groups and having an absorption wavelength in the wavelength region from 330 to 450 nm.
  • preferred compounds include a multinuclear aromatic compound (for example, phenanthrene, anthracene, pyrene, perylene, triphenylene or 9,10-dialkoxyanthracene), a xanthene (for example, fluorescein, eosin, erythrosine, Rhodamine B or rose Bengal), a thioxanthone (2,4-diethylthioxanthone, isopropylthioxanthone, diethylthioxanthone or chlorothioxanthone), a cyanine (for example, thiacarbocyanine or oxacarbocyanine), a merocyanine (for example, merocyanine or carbomerocyanine), a phthalocyanine, a thiazine (for example, thionine, methylene blue or toluidine blue), an acridine (for example, acridine orange, chlor
  • the curable resin composition according to the invention may or may not contain the sensitizer, and in the case where the curable resin composition contains the sensitizer, the content of the sensitizer is preferably from 0.01 to 10% by mass, more preferably from 0.1 to 2% by mass, based on the total solid content mass of the curable resin composition.
  • the curable resin composition according to the invention may further contain a crosslinking agent for the purpose of increasing the strength of the dye-containing layer.
  • the crosslinking agent a compound having a crosslinkable group is preferred, and a compound having two or more crosslinkable groups is more preferred.
  • the crosslinkable group preferably include an oxetane group and a cyanate group.
  • an epoxy group, an oxetane group and a cyanate group are preferred.
  • the crosslinkable agent is particularly preferably an epoxy compound, an oxetane compound or a cyanate compound.
  • Examples of the epoxy compound which can be preferably used as the crosslinkable agent in the invention include an epoxy compound containing at least two oxirane groups per molecule and an epoxy compound containing at least two epoxy groups having an alkyl group at the ⁇ -position per molecule.
  • Examples of the epoxy compound having at least two oxirane groups per molecule include a bixylenol type or biphenol type epoxy compound (for example, YX4000 produced by Japan Epoxy Resin Co., Ltd.) or a mixture thereof, a heterocyclic epoxy compound having an isocyanurate skeleton or the like (for example, TEPIC produced by Nissan Chemical Industries, Ltd.
  • a bisphenol A type epoxy compound for example, diaminodiphenylmethane type epoxy compound, glycidylaniline or triglycidyla
  • an epoxy compound containing at least two epoxy groups having an alkyl group at the ⁇ -position per molecule can be used.
  • a compound containing an epoxy group substituted with an alkyl group at the ⁇ -position is particularly preferred.
  • epoxy compounds containing at least an epoxy group having an allyl group at the ⁇ -position all of two or more epoxy groups contained per molecule may be ⁇ -alkyl-substituted glycidyl groups or at least one epoxy group may be a ⁇ -alkyl-substituted glycidyl group.
  • oxetane compound examples include an oxetane resin having at least two oxetanyl groups per molecule.
  • oxetane for example, bis[(3-methyl-3-oxetanylmethoxy)methyl]ether,bis[(3-ethyl-3-oxetanylmethoxy)methyl]ether, 1,4-bis[(3-methyl-3-oxetanylmethoxy)methyl]benzene, 1,4-bis[(3-ethyl-3-oxetanylmethoxy)methyl]benzene, (3-methyl-3-oxetanyl)methyl acrylate, (3-ethyl-3-oxetanyl)methyl acrylate, (3-methyl-3-oxetanyl)methyl methacrylate, (3-ethyl-3-oxetanyl)methyl methacrylate, or oligomer or copolymer thereof; and an ether compound of a compound having an oxetane group and a compound having a hydroxy group, for example, a novolac resin, poly(p-
  • cyanate compound examples include a bis A type cyanate compound, a bis F type cyanate compound, a cresol novolac type cyanate compound and a phenol novolac type cyanate compound.
  • crosslinking agent melamine or a melamine derivative can be used.
  • melamine derivative examples include methylolmelamine and an alkylated methylolmelamine (a compound obtained by etherifying a methylol group with methyl, ethyl, butyl or the like).
  • the crosslinking agents may be used individually or in combination of two or more thereof.
  • the crosslinking agent is preferably melamine or an alkylated methylolmelamine, particularly preferably a hexamethylated methylolmelamine, in view of good preservation stability and effectiveness in increasing the surface hardness or film strength itself of the cured film (film after performing a crosslinking reaction due to the crosslinking agent with energy, for example, light or heat).
  • the curable resin composition according to the invention may or may not contain the crosslinking agent, and in the case where the curable resin composition contains the crosslinking agent, the content of the crosslinking agent is preferably from 1 to 40% by mass, more preferably from 3 to 20% mass, based on the total solid content mass of the curable resin composition.
  • the curable resin composition according to the invention may further contain a curing accelerator for the purpose of accelerating heat curing of the crosslinking agent, for example, the epoxy compound or oxetane compound described above.
  • a curing accelerator for the purpose of accelerating heat curing of the crosslinking agent, for example, the epoxy compound or oxetane compound described above.
  • the curing accelerator which can be used include an amine compound (for example, dicyandiamide, benzyldimethylamine, 4-(dimethylamino)-N,N-dimethylbenzylamine, 4-methoxy-N,N-dimethylbenzylamine or 4-methyl-N,N-dimethylbenzylamine), a quaternary ammonium salt compound (for example, triethylbenzylammonium chloride), a blocked isocyanate compound (for example, dimethylamine), an imidazole derivative dicyclic amidine compound or salt thereof (for example, imidazole, 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 4-phenylimidazole, 1-cyanoethyl-2-phenylimidazole or 1-(2-cyanoethyl)-2-ethyl-4-methylimidazole), a phosphorus compound (for example
  • the curing accelerators may be used individually or in combination of two or more thereof.
  • the curable resin composition according to the invention may or may not contain the curing accelerator, and in the case where the curable resin composition contains the curing accelerator, the content of the curing accelerator is ordinarily from 0.01 to 15% by mass based on the total solid content of the curable resin composition.
  • the curable resin composition according to the invention may further contain an elastomer.
  • the adhesion property between the substrate and the infrared ray cut filter can be more increased and the heat resistance, heat shock resistance, flexibility and toughness of the infrared ray cut filter can be more increased.
  • the elastomer which can be used in the invention is not particularly limited and may be appropriately selected according to the purpose. Examples thereof include a styrene-based elastomer, an olefin-based elastomer, a urethane-based elastomer, a polyester-based elastomer, a polyamide-based elastomer, an acrylic-based elastomer and a silicone-based elastomer.
  • the elastomer is composed of a hard segment component and a soft segment component, wherein ordinarily, the former contributes to the heat resistance and strength and the latter contributes to the flexibility and toughness.
  • a polyester-based elastomer is advantageous in view of compatibility with other materials.
  • the styrene-based elastomer specifically includes, for example, TUFPRENE, SOLPRENE T, ASAPRENE T and TUFTEC (produced by Asahi Chemical Industry Co., Ltd.), ELASTOMER AR (produced by Aronkasei Co., Ltd.), KRATON G and CALIFLEX (produced by Shell Chemicals Japan Ltd.), JSR-TR, TSR-SIS and DYNARON (produced by JSR Corp.), DENKA STR (produced by Denki Kagaku Kogyo Kabushiki Kaisha), QUINTAC (produced by ZEON Corp.), TPE-SB Series (produced by Sumitomo Chemical Co., Ltd.), RABALON (produced by Mitsubishi Chemical Corp.), SEPTON and HYBRAR (produced by Kuraray Co., Ltd.), SUMIFLEX (produced by Sumitomo Bakelite Co., Ltd.), LEOSTOMER and ACTYMER (produced by Riken Vinyl Industry Co., Ltd.).
  • olefin-based elastomer examples include MILASTOMER (produced by Mitsui Petrochemical Industries, Ltd.), EXACT (produced by Exxon Chemical Corp.), ENGAGE (produced by Dow Chemical Co.), hydrogenated styrene-butadiene rubber (DYNABON HSBR produced by JSR Corp.), butadiene-acrylonitrile copolymer (NBR Series produced by JSR Corp.), crosslinking point-containing butadiene-acrylonitrile copolymer modified with carboxyl group at both terminals (XER Series produced by JSR Corp.) and epoxidized polybutadiene in which polybutadiene is partially epoxidized (BF-1000 produced by Nippon Soda Co., Ltd.).
  • MILASTOMER produced by Mitsui Petrochemical Industries, Ltd.
  • EXACT produced by Exxon Chemical Corp.
  • ENGAGE produced by Dow Chemical Co.
  • hydrogenated styrene-butadiene rubber DYNAB
  • urethane-based elastomer examples include PANDEX T-2185 and T-2983N (produced by DIC Corp.) and SIRACTRAN E790.
  • polyester-based elastomer examples include HYTREL (produced by Du Pont-Toray Co., Ltd.), PELPRENE (produced by Toyobo Co., Ltd.) and ESPEL (produced by Hitachi Chemical Co., Ltd.).
  • the polyamide-based elastomer specifically includes, for example, UBE Polyamide Elastomer (produced by Ube Industries, Ltd.), DAIAMIDE (produced by Daicel-Huels Ltd.), PEBAX (produced by Toray Industries, Inc.), GRILON ELY (EMS-CHEMIE (Japan) Ltd.), NOVAMID (produced by Mitsubishi Chemical Corp.) and GRILAX (produced by DIC Corp.).
  • the acrylic-based elastomer is obtained by copolymerizing an acrylic acid ester, for example, ethyl acrylate, butyl acrylate, methoxyethyl acrylate or ethoxyethyl acrylate with an epoxy group-containing monomer, for example, glycidyl methacrylate or allyl glycidyl ether and/or a vinyl-based monomer, for example, acrylonitrile or ethylene.
  • an acrylic acid ester for example, ethyl acrylate, butyl acrylate, methoxyethyl acrylate or ethoxyethyl acrylate
  • an epoxy group-containing monomer for example, glycidyl methacrylate or allyl glycidyl ether
  • a vinyl-based monomer for example, acrylonitrile or ethylene.
  • acrylic-based elastomer examples include an acrylonitrile-butyl acrylate copolymer, an acrylonitrile-butyl acrylate-ethyl acrylate copolymer and an acrylonitrile-butyl acrylate-glycidyl methacrylate, copolymer.
  • silicone-based elastomer examples include KE Series (produced by Shin-Etsu Chemical Co., Ltd.), SE Series, CY Series and SH Series (produced by Dow Corning Toray Silicone Co., Ltd.).
  • a rubber-modified epoxy resin can be used.
  • the rubber-modified epoxy resin is obtained by modifying a part or all of epoxy groups of, for example, the bisphenol F-type epoxy resin, bisphenol A-type epoxy resin, salicylaldehyde-type epoxy resin, phenol novolac-type epoxy resin or cresol novolac-type epoxy resin described above, with both terminal carboxylic acid-modified butadiene-acrylonitrile rubber, terminal amino-modified silicone rubber or the like.
  • elastomers from the standpoint of shear adhesion property and heat shock resistance, a both terminal carboxyl group-modified butadiene-acrylonitrile copolymer, a polyester-based elastomer having a hydroxy group (ESPEL 1612 and 1620 produced by Hitachi Chemical Co., Ltd.) and an epoxidized polybutadiene are preferred.
  • ESPEL 1612 and 1620 produced by Hitachi Chemical Co., Ltd.
  • an epoxidized polybutadiene are preferred.
  • the curable resin composition according to the invention may or may not contain the elastomer, and in the case where the curable resin composition contains the elastomer, although the content of the elastomer is not particularly limited and may be appropriately selected according to the purpose, it is preferably from 0.5 to 30% by mass, more preferably from 1 to 10% by mass, particularly preferably from 3 to 8% by mass, based on the total solid content mass of the curable resin composition. It is advantageous that the content is in the preferred range described above because the shear adhesion property and heat shock resistance can be more improved.
  • various surfactants from the standpoint of more improving the coating property.
  • various surfactants for example, a fluorine-based surfactant, a nonionic surfactant, a cationic surfactant, an anionic surfactant or a silicone-based surfactant may be used.
  • the liquid property (particularly, fluidity) of a coating solution prepared from the curable resin composition can be more improved so that uniformity of the coating thickness and liquid saving property can be more improved.
  • the interfacial tension between a surface to be coated and the coating solution is reduced, whereby wettability of the surface to be coated is increased and the coating property onto the surface to be coated is improved. Therefore, even when a thin film of approximately several ⁇ m is formed using a smaller amount of the coating solution, it is effective from the standpoint that a film having a uniform thickness with small unevenness in thickness is more preferably formed.
  • the fluorine content in the fluorine-based surfactant is preferably from 3 to 40% by mass, more preferably from 5 to 30% by mass, and particularly preferably from 7 to 25% by mass.
  • the fluorine-based surfactant having the fluorine content of the range described above is effective in view of the uniformity of the thickness of the coated film and liquid saving property and also exhibits good solubility in the curable resin composition.
  • the fluorine-based surfactant includes, for example, MEGAFAC F171, MEGAFAC F172, MEGAFAC F173, MEGAFAC F176, MEGAFAC F177, MEGAFAC F141, MEGAFAC F142, MEGAFAC F143, MEGAFAC F144, MEGAFAC R30, MEGAFAC F437, MEGAFAC F475, MEGAFAC F479, MEGAFAC F482, MEGAFAC F554, MEGAFAC F780 and MEGAFAC F781 (produced by DIC Corp.), FLUORAD FC430, FLUORAD FC431 and FLUORAD FC171 (produced by Sumitomo 3M Ltd.), and SURFLON S-382, SURFLON SC-101, SURFLON SC-103, SURFLON SC-104, SURFLON SC-105, SURFLON SC-1068, SURFLON SC-381, SURFLON SC-383, SURFLON S-393 and SUR
  • the nonionic surfactant specifically includes, for example, polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octylphenyl ether, polyoxyethylene nonylphenyl ether, polyethylene glycol dilaurate, polyethylene glycol distearate and a sorbitan fatty acid ester (for example, PLURONIC L10, L31, L61, L62, 0R5,17R2 and 25R2 and TETRONIC 304, 701, 704, 901, 904 and 150R1 produced by BASF, and SOLSPERSE 20000 produced by Zeneca).
  • polyoxyethylene lauryl ether for example, polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octylphenyl ether, polyoxyethylene nonylphenyl ether, polyethylene glycol dilaurate, polyethylene glycol distea
  • the cationic surfactant specifically includes, for example, a phthalocyanine derivative (trade name: EFKA-745 produced by Morishita Sangyo K.K.), Organosiloxane Polymer KP341 (produced by Shin-Etsu Chemical Co., Ltd.), a (meth)acrylic acid (co)polymer (POLYFLOW No. 75, No. 90 and No. 95 (produced by Kyoeisha Chemical Co., Ltd.), and W001 (produced by Yusho Co Ltd.).
  • a phthalocyanine derivative trade name: EFKA-745 produced by Morishita Sangyo K.K.
  • Organosiloxane Polymer KP341 produced by Shin-Etsu Chemical Co., Ltd.
  • a (meth)acrylic acid (co)polymer POLYFLOW No. 75, No. 90 and No. 95 (produced by Kyoeisha Chemical Co., Ltd.), and W001 (produced by Yusho Co Ltd.).
  • the anionic surfactant specifically includes, for example, W004, W005 and W017 (produced by Yusho Co Ltd.).
  • the silicone-based surfactant includes, for example, TORAY SILICONE DC3PA, TORAY SILICONE SH7PA, TORAY SILICONE DCllPA, TORAY SILICONE SH21PA, TORAY SILICONE SH28PA, TORAY SILICONE SH29PA, TORAY SILICONE SH30PA and TORAY SILICONE SH8400 produced by Dow Corning Toray Co., Ltd., TSF-4440, TSF-4300, TSF-4445, TSF-4460 and TSF-4452 produced by Momentive Performance Materials Inc., KP341, KF6001 and KF6002 produced by Shin-Etsu Silicone Co., Ltd, and BYK-323 and BYK-330 produced by Byk-Chemie GmbH.
  • TSF-4440, TSF-4300, TSF-4445, TSF-4460 and TSF-4452 produced by Momentive Performance Materials Inc.
  • KP341, KF6001 and KF6002 produced by Shin-Etsu Silicone Co., Ltd
  • the surfactants may be used individually or in combination of two or more thereof.
  • the curable resin composition according to the invention may or may not contain the surfactant, and in the case where the curable resin composition contains the surfactant, the content of the surfactant is preferably from 0.001 to 1% by mass, more preferably from 0.01 to 0.1% by mass, based on the total solid content mass of the curable resin composition.
  • Examples of other components which can be used in combination include a heat curing accelerator, a thermal polymerization inhibitor and a plasticizer. Further, an adhesion accelerator to a surface of the substrate, and other auxiliary agents (for example, an electrically conductive particle, a filler, a defoaming agent, a flame retardant, a leveling agent, a release accelerator, an antioxidant, a perfume, a surface tension-controlling agent or a chain transfer agent) may be used in combination.
  • auxiliary agents for example, an electrically conductive particle, a filler, a defoaming agent, a flame retardant, a leveling agent, a release accelerator, an antioxidant, a perfume, a surface tension-controlling agent or a chain transfer agent
  • the properties of the intended infrared ray absorbing filter for example, stability or physical property of film can be adjusted.
  • the thermal polymerization inhibitor is described in detail, for example, in paragraphs 0101 to 0102 of JP-A-2008-250074 .
  • the plasticizer is described in detail, for example, in paragraphs 0103 and 0104 of JP-A-2008-250074 .
  • the adhesion accelerator is described in detail, for example, in paragraphs 0107 to 0109 of JP-A-2008-250074 .
  • the curable resin composition according to the invention preferably contains a solvent
  • the solvent is not particularly limited, and a solvent capable of uniformly dissolving or dispersing each component of the curable rein composition according to the invention may be appropriately selected according to the purpose.
  • the solvent include an alcohol, for example, methanol, ethanol, normal propanol, isopropanol, normal butanol, secondary butanol or normal hexanol; a ketone, for example, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, diisobutyl ketone, cyclohexanone or cyclopentanone; an ester, for example, ethyl acetate, butyl acetate, normal amyl acetate, methyl sulfate, ethyl propionate, dimethyl phthalate, ethyl benzoate, propylene glycol monomethyl ether acetate or methoxypropyl acetate; an aromatic hydrocarbon, for
  • the curable resin composition according to the invention thus-obtained has a solid content concentration preferably from 10 to 90% by mass, more preferably from 15 to 90% by mass, most preferably from 20 to 80% by mass, from the standpoint of being capable of forming a dye-containing layer having a film thickness of 20 ⁇ m or more which is preferably applicable to an image sensor chip.
  • the use of the curable resin composition according to the invention includes, for example, use in a dye-containing layer as a near infrared ray shielding film on a light receiving side of a solid-state imaging device substrate (for example, for a dye-containing layer as a near infrared ray shielding film to a wafer level lens), use in a dye-containing layer as a near infrared ray shielding film on a rear side (opposite side to the light-receiving side) of a solid-state imaging device substrate or use in a dye-containing layer as a near infrared ray shielding film in an infrared ray cut filter, and is preferably use in a dye-containing layer as a near infrared ray shielding film on a light-receiving side of a solid-state imaging device substrate.
  • the viscosity of the curable resin composition according to the invention is preferably from 1 mPa ⁇ s to 1,000 Pa ⁇ s, more preferably from 10 mPa ⁇ s to 1,000 Pa ⁇ s, from the standpoint of thick film-forming property capable of forming a dye-containing layer having a film thickness of 20 ⁇ m or more and uniform coating property in the image sensor chip use.
  • the viscosity of the curable resin composition is preferably from 1 to 500 mPa ⁇ s, more preferably from 10 to 500 mPa ⁇ s, and most preferably from 20 to 100 mPa ⁇ s.
  • the viscosity of the curable resin composition is preferably from 1 to 1,000 mPa ⁇ s, and most preferably from 5 to 200 mPa ⁇ s. Further, in the case of applicator coating, the viscosity of the curable resin composition is preferably from 10 mPa ⁇ s to 1 Pa ⁇ s, and most preferably from 300 to 700 mPa ⁇ s.
  • a formation method of the dye-containing layer includes a method of forming the dye-containing layer by coating the curable resin composition (a coating solution prepared by dissolving, emulsifying or dispersing the solid content of the composition in the solvent described above) according to the invention directly on a support, followed by drying.
  • the curable resin composition a coating solution prepared by dissolving, emulsifying or dispersing the solid content of the composition in the solvent described above
  • the coating method of the curable resin composition (coating solution) on the support is performed by using, for example, an applicator, a spin coater, a slit spin coater, a slit coater or screen printing.
  • the applicator coating means a coating method wherein after putting a drop of a coating solution on a substrate, the coating solution is coated to spread on the substrate by a rod-like instrument referred to as an applicator (with a gap of several hundred ⁇ m between the substrate and the rod).
  • drying conditions of the coated film may be varied depending on the kinds of each component and solvent, the use ratio and the like, and are ordinarily at a temperature from 60 to 150°C for approximately from 30 seconds to 15 minutes.
  • the support may be a solid-state imaging device substrate, another substrate (for example, a glass substrate 30 described later) provided on the light-receiving side of the solid-state imaging device substrate or a low refractive index layer or the like provided on the light-receiving side of the solid-state imaging device substrate.
  • another substrate for example, a glass substrate 30 described later
  • a low refractive index layer or the like provided on the light-receiving side of the solid-state imaging device substrate.
  • the dye-containing layer it is preferred to include a step of hydrophilization treatment of a surface (surface of a support, for example, the glass substrate or the solid-state imaging device substrate) which brings into contact with the dye-containing layer before the step of forming the dye containing layer.
  • a step of hydrophilization treatment of a surface surface of a support, for example, the glass substrate or the solid-state imaging device substrate
  • the hydrophilization treatment is not particularly limited, and includes Method 1 and Method 2 described below and is preferably Method 1.
  • the film thickness of the dye-containing layer is preferably 20 ⁇ m or more, more preferably from 20 to 300 ⁇ m, still more preferably from 20 to 200 ⁇ m, particularly preferably from 30 to 150 ⁇ m, most preferably from 40 to 120 ⁇ m, from the standpoint of being capable of preferably applying to an image sensor chip.
  • the film thickness is appropriately adjusted by the dye used, but by coating in such a thick film the desired infrared ray cut function can be achieved without limitation of the kind of dye used.
  • the dye-containing layer may be composed of multiple layers.
  • a copper complex is incorporated into a first dye-containing layer (copper complex-containing layer) and a dye different from the copper complex (preferably a pyrrolopyrrole dye) is incorporated into a second dye-containing layer.
  • the film thickness of the copper complex-containing layer is preferably composed of the thick layer described above, and specifically 50 ⁇ m or more.
  • the film thickness of the second dye-containing layer is preferably 10 ⁇ m or less, more preferably 5 ⁇ m or less, and particularly preferably 3 ⁇ m or less.
  • the method of forming the dye-containing layer using the curable resin composition according to the invention may contain other steps.
  • the other steps are not particularly limited, can be appropriately selected according to the purpose, and include, for example, a surface treatment step of substrate, a pre-heating step (prebake step), a curing treatment step and a post-heating step (postbake step).
  • the heating temperature in the pre-heating step and post-heating step is ordinarily from 80 to 200°C, and preferably from 90 to 150°C.
  • the heating time in the pre-heating step and post-heating step is ordinarily from 30 to 240 seconds, and preferably from 60 to 180 seconds.
  • the curing treatment step is a step of applying a curing treatment to the film formed, if desired. By conducting the treatment, the mechanical strength of the dye-containing layer is enhanced.
  • the curing treatment step is not particularly limited, can be appropriately selected according to the purpose, and preferably includes, for example, an entire surface exposure treatment and an entire surface heating treatment
  • exposure means and includes not only exposure to light having various wavelengths but also irradiation with radiation, for example, an electron beam or an X-ray.
  • the exposure is preferably performed by the irradiation with radiation and as the radiation usable at the exposure, in particular, an electron beam, KrF, ArF, an ultraviolet light, for example, g-line, h-line or i-line, or visible light is preferably used.
  • KrF, g-line, h-line or i-line is preferred.
  • Examples of the exposure system include stepper exposure and exposure with a high-pressure mercury lamp.
  • the exposure amount is preferably from 5 to 3,000 mJ/cm 2 , more preferably from 10 to 2,000 mJ/cm 2 , and most preferably from 50 to 1,000 mJ/cm 2 .
  • Examples of the method for the entire surface exposure treatment include a method of exposing the entire surface of the film formed.
  • the curable resin composition contains a polymerizable compound
  • curing of the polymerization component in the film formed from the curable resin composition is accelerated and curing of the film formed is further proceeds, thereby improving the mechanical strength and durability.
  • the apparatus for conducting the entire surface exposure is not particularly limited, can be appropriately selected according to the purpose, and preferably includes an UV exposure machine, for example, an ultrahigh-pressure mercury lamp.
  • examples of the method for the entire surface heating treatment includes a method of heating the entire surface of the film formed. BY the entire surface heating, the film strength of the pattern is enhanced.
  • the heating temperature at the entire surface heating is preferably from 120 to 250°C, and more preferably from 120 to 250°C.
  • the heating temperature is 120°C or more, the film strength is increased by the heat treatment, and when the heating temperature is 250°C or less, the occurrence of decomposition of the components in the film to weaken and embrittle the film quality can be prevented.
  • the heating time in the entire surface heating is preferably from 3 to 180 minutes, and more preferably from 5 to 120 minutes.
  • the apparatus for conducting the entire surface heating is not particularly limited, can be appropriately selected from known apparatuses according to the purpose, and includes, for example, a dry oven, a hot plate and an IR heater.
  • the dye-containing layer obtained by using the curable resin composition according to the invention described above has a high light-shielding property in the near infrared region around wavelength of 700 nm (near infrared ray shielding property) and a high light-transmitting property in the visible region (visible light transmitting property) because it is formed from the curable resin composition according to the invention.
  • a surface of the image sensor chip may be further subjected to a hydrophilization treatment.
  • the hydrophilization treatment the adhesion property of the dye-containing layer is increased.
  • the hydrophilization treatment is preferably performed by a plasma ashing treatment using U-621 (produced by Hitachi High-Technologies Corp.). In this case, it is preferred to perform under conditions of Ar flow rate from 500 to 2,000 ml/min, O 2 flow rate from 1 to 50 ml/min, and pressure from 0.1 to 50 Pa.
  • the time is preferably from 3 to 300 seconds.
  • the invention also relates to a camera module comprising a solid-state imaging device substrate and the dye-containing layer provided on a light-receiving side of the solid-state imaging device substrate.
  • the camera module according to one preferred embodiment of the invention is described below with reference to Fig. 1 and Fig. 2 , but the invention should not be construed as being limited thereto.
  • top each indicates a side farther from a silicon substrate 10
  • bottom each indicates a side closer to the silicon substrate 10.
  • Fig. 1 is a schematic cross-sectional view showing a configuration of a camera module equipped with an image sensor chip.
  • the camera module 200 shown in Fig. 1 is connected to a circuit board 70 as a mounting substrate through a solder ball 60 as a connection member.
  • the camera module 200 is configured to comprise a solid-state imaging device substrate 100 having an image-forming device unit on a first major surface of a silicon substrate, a dye-containing layer 42 provided on the solid-state imaging device substrate 100, a glass substrate 30 (light-transmitting substrate) disposed above the dye-containing layer 42, an infrared ray reflecting film 35 disposed above the glass substrate 30, a lens holder 50 having an imaging lens 40 in an internal space and being disposed above the glass substrate 30, and a light-shielding and electromagnetic shield 44 disposed so as to surround the periphery of the solid-state imaging device substrate 100 and the glass substrate 30.
  • Respective members are adhered using adhesives 20 (not shown in Fig. 1 ) and 45.
  • incident light hv from the outside sequentially passes through the imaging lens 40, the infrared ray reflecting film 35, the glass substrate 30 and the dye-containing layer 42 so as to reach the imaging device unit of the solid-state imaging device substrate 100.
  • the camera module 200 is connected to a circuit board 70 through the solder ball 60 (connection material) on the second major surface side of the solid-state imaging device substrate 100.
  • Fig. 2 is an enlarged cross-sectional view of the solid-state imaging device substrate 100 in Fig. 1 .
  • the solid-state imaging device substrate 100 is configured to comprise a silicon substrate 10 as a base material, an imaging device 12, an interlayer insulating film 13, a base layer 14, a red color filter 15R, a green color filter 15G, a blue color filter 15B, an overcoat 16, a high refractive index layer (microlens) 17, a low refractive index layer, a light-shielding film 18, an insulating film 22, a metal electrode 23, a solder resist layer 24, an internal electrode 26 and a device surface electrode 27.
  • solder resist layer 24 may be omitted.
  • the configuration on the first major surface side (light-receiving side) of the solid-state imaging device substrate 100 is mainly described below.
  • an imaging device unit where a plurality of imaging devices 12, for example, CCD and CMOS are two-dimensionally arrayed is provided on the first major surface side of the silicon substrate 10 which is the base material of the solid-state imaging device substrate 100.
  • the interlayer insulating film 13 is formed on the imaging device 12 in the imaging device unit, and the base layer 14 is formed on the interlayer insulating film 13. Further, the red color filter 15R, the green color filter 15G and the blue color filter 15B (hereinafter, these are collectively referred to as a "color filter 15" sometimes) corresponding to respective imaging devices 12 are disposed on the base layer 14, respectively.
  • a light-shielding film not shown may be provided in the boundaries of the red color filter 15R, the green color filter 15G and the blue color filter 15B and in the periphery of the imaging device unit.
  • the light-shielding film can be produced, for example, using a known black color resist.
  • the overcoat 16 is formed on the color filter 15, and the high refractive index layer 17 is formed on the overcoat 16 so as to correspond to the imaging device 12 (color filter 15).
  • the low refractive index layer 46 is provided on the high refractive index layer 17.
  • a peripheral circuit (not shown) and the internal electrode 26 are provided, and the internal electrode 26 is electrically connected to the imaging device 12 through the peripheral circuit
  • the device surface electrode 27 is formed on the internal electrode 26 through the interlayer insulating film 13.
  • a contact plug (not shown) for electrically connecting these electrodes is formed.
  • the device surface electrode 27 is used for voltage application, signal reading and the like though the contact plug and the internal electrode 26.
  • the base layer 14 is formed on the device surface electrode 27.
  • the overcoat 16 is formed on the base layer 14.
  • the base layer 14 and the overcoat 16 formed on the device surface electrode 27 are opened to form a pad opening and to expose a part of the device surface electrode 27.
  • the adhesive 20 is provided in the periphery of the imaging device unit, and the solid-state imaging device substrate 100 and the glass substrate 30 are adhered through the adhesive 20.
  • the silicon substrate 10 has a through-hole penetrating the silicon substrate 10, and a penetrating electrode which is a part of the metal electrode 23 is provided in the through-hole.
  • the imaging device unit and the circuit board 70 are electrically connected by the penetrating electrode.
  • the insulating film 22 is formed from the second major surface to the inner wall of the through-hole.
  • the metal electrode 23 patterned to extend from the region on the second major surface of the silicon substrate 10 to the inside of the through hole is provided.
  • the metal electrode 23 is an electrode for connecting the imaging device unit in the solid-state imaging device substrate 100 and the circuit board 70.
  • the penetrating electrode is the portion formed inside the through hole of the metal electrode 23.
  • the penetrating electrode penetrates the silicon substrate 10 and a part of the interlayer insulating film and reaches the lower side of the internal electrode 26 to be electrically connected to the internal electrode 26.
  • solder resist layer 24 (protective insulating film) covering the second major surface on which the metal electrode 23 is formed and having an opening to expose a part of the metal electrode 23 is provided.
  • the light-shielding film 18 covering the second major surface on which the solder resist layer 24 is formed and having an opening to expose a part of the metal electrode 23 is provided.
  • the light-shielding film 18 is patterned so as to cover a part of the metal electrode 23 and to expose the remaining portion, it may be patterned to expose the entirety of the metal electrode 23 (the same applies to the patterning of the solder resist layer 24).
  • solder resist layer 24 may be omitted and the light-shielding film 18 may be formed directly on the second major surface where the metal electrode 23 is formed.
  • solder ball 60 as a connection member is provided on the exposed metal electrode 23, and the metal electrode 23 of the solid-state imaging device substrate 100 and a connection electrode not shown of the circuit board 70 are electrically connected through the solder ball 60.
  • the configuration of the solid-state imaging device substrate 100 has been described above, and the solid-state imaging device substrate 100 can be formed by a known method, for example, a method described in paragraphs 0033 to 0068 of JP-A-2009-158863 or a method described in paragraphs 0036 to 0065 of JP-A-2009-99591 .
  • the interlayer insulating film 13 is formed, for example, by sputtering or CVD (chemical vapor deposition) as an SiO 2 film or an SiN film.
  • the color filter 15 is formed by photolithography, for example, using a known color resist.
  • the overcoat 16 and the base layer 14 are formed by photolithography using, for example, a known resist for forming an organic interlayer film, respectively.
  • the microlens 17 is formed, for example, by photolithography using a styrene-based resin or the like.
  • the solder resist layer 24 is preferably formed by photolithography using a known solder resist containing, for example, a phenolic resin, a polyimide-based resin or an amine-based resin.
  • the solder ball 60 is formed as a sphere having, for example, a diameter from 100 to 1,000 ⁇ m (preferably a diameter from 150 to 700 ⁇ m).
  • the internal electrode 26 and the device surface electrode 27 are formed, for example, by CMP (chemical mechanical polishing) or photolithography and etching, as a metal electrode, for example, of Cu.
  • CMP chemical mechanical polishing
  • photolithography and etching as a metal electrode, for example, of Cu.
  • the metal electrode 23 is formed as a metal electrode, for example, of Cu, Au, Al, Ni, W, Pt, Mo, a Cu compound, a W compound or a Mo compound.
  • the metal electrode 23 may have a sing-layer configuration or a multilayer configuration composed of two or more layers.
  • the film thickness of the metal electrode 23 is, for example, from 0.1 to 20 ⁇ m (preferably from 0.1 to 10 ⁇ m).
  • the silicon substrate 10 is not particularly limited, and a silicon substrate thinned by grinding the back surface of the substrate may be used.
  • the thickness of the substrate is not limited and, for example, a silicon wafer having a thickness from 20 to 200 ⁇ m (preferably from 30 to 150 ⁇ m) is used.
  • the through-hole of the silicon substrate 10 is formed, for example, by photolithography or RIE (reactive ion etching).
  • One embodiment of the camera module has been described hereinbefore with reference to Fig.1 and Fig. 2 , but the embodiment above is not limited to the configuration of Fig. 1 and Fig. 2 .
  • the invention relates to an infrared ray cut filter comprising the dye-containing layer described above, as a near infrared ray shielding film, provided on a light-transmitting substrate, for example, a glass substrate.
  • the infrared ray cut filter according to the invention may be an infrared ray cut filter comprising two or more dye-containing layers, as a near infrared ray shielding film, provided on a light-transmitting substrate.
  • an infrared ray cut filter comprising a first dye-containing layer containing a copper complex and a second dye-containing layer containing a pyrrolopyrrole dye is preferred from the standpoint of the heat resistance in the reflow process.
  • the infrared ray cut filter comprising two or more dye-containing layers can be formed by coating, drying, and curing described later using a curable resin composition containing a dye having a maximum absorption wavelength in a wavelength range from 600 to 850 nm to from a dye-containing layer, and then using a curable resin composition containing a dye which is different from the dye described above and may have a maximum absorption wavelength in a wavelength range from 600 to 850 nm.
  • the infrared ray cut filter according to the invention can be subjected to a solder reflow process.
  • the production of camera module by the solder reflow process makes automatic mounting of electronic component mounting substrate and the like requiring to perform soldering possible, and productivity can be significantly improved in comparison with the case where the solder reflow process is not used. Further, since the mounting can be performed automatically, it is possible to reduce the cost In the case where the infrared ray cut filter is subjected to the solder reflow process, since the infrared ray cut filter is exposed to a temperature approximately from 250 to 270°C, it is preferred for the infrared ray cut filter to have heat resistance endurable the solder reflow process (hereinafter, also referred to as "solder reflow resistance").
  • the phrase "having a solder reflow resistance" means that the property of the infrared ray cut filter is maintained before and after performing the heating at 250°C for 5 minutes. More preferably, the property is maintained before and after performing the heating at 260°C for 5 minutes. Still more preferably, the property is maintained before and after performing the heating at 270°C for 3 minutes. In the case of having no solder reflow resistance, when the infrared ray cut filter is maintained under the conditions described above, the infrared ray absorbing ability of the infrared ray cut filter deteriorates and the function as a film becomes insuffcient in some cases.
  • the invention relates to a production method of camera module including a step of the reflow processing.
  • the infrared ray cut filter according to the invention can maintain the infrared ray absorbing ability even when it is subjected to the solder reflow process so that the characteristics of compact, lightweight and high-performance camera module are not destroyed.
  • the infrared ray cut filter is required to have heat resistance capable of responding to the reflow temperature.
  • the invention also relates to an image sensor chip which can be preferably used for the camera module described above and a production method thereof,
  • Fig. 3(a) and (b) are both schematic cross-sectional views showing an embodiment of the production method of image sensor chip according to the invention.
  • the production method of image sensor chip according to the invention comprises a step of coating the curable resin composition described above on a solid-state imaging device substrate 100 (in Fig. 3 , a surface of the planarizing film 46 of the substrate) to form a dye-containing layer 42, and a step of adhering a glass substrate 30 having an infrared ray reflecting film 35 onto the dye-containing layer 42.
  • the production method of image sensor chip according to the invention from the standpoint of adhesion property between the dye-containing layer 42 and the solid-state imaging device substrate 100, it is preferred to include a step of hydrophilization treatment of a surface of the solid-state imaging device substrate 100 (in Fig. 3 , a planarizing film 46 of the substrate) before a step of forming the dye containing layer 42 on the solid-state imaging device substrate 100.
  • the hydrophilization treatment is not particularly limited, and includes Method 1 and Method 2 described above.
  • an image sensor chip comprising a solid-state imaging device substrate 100 (in Fig. 3 , a low refractive index layer 46 of the substrate), a dye-containing layer 42 and a glass substrate 30 having an infrared ray reflecting film 35, wherein these members are closely contacted with each other without intervention of an air layer can be produced.
  • a surface of the glass substrate 30 on which the infrared ray reflecting film 35 is not formed may be adhered to the dye-containing layer 42 as the embodiment shown in Fig. 3(a) or a surface of the glass substrate 30 on which the infrared ray reflecting film 35 is formed may be adhered to the dye-containing layer 42 as the embodiment shown in Fig. 3(b) .
  • an image sensor chip having the infrared ray reflecting film 35 on a surface of the glass substrate 30 opposite to the dye-containing layer 42 can be produced.
  • an image sensor chip having the infrared ray reflecting film 35 between the dye-containing layer 42 and the glass substrate 30 can be produced.
  • a stack containing a dye-containing layer 42 as a near infrared ray shielding film, a glass substrate 30 and an infrared ray reflecting film 35 is able to function as an infrared ray cut filter.
  • the infrared ray reflecting film 35 is not particularly limited, and is preferably a dielectric multilayer firm.
  • the dielectric multilayer film for use in the invention is a film having a function of reflecting and/or absorbing a near infrared ray.
  • a stack in which a dye-containing layer 42 formed from the curable resin composition described above, a glass substrate 30 and a dielectric multilayer film as an infrared ray reflecting film 35 are continuously provided in this order may be formed as the embodiment shown in Fig. 3(a) , or a stack in which a dye-containing layer 42, a dielectric multilayer film as an infrared ray reflecting film 35, and a glass substrate 30 are continuously provided in this order may be formed as the embodiment shown in Fig. 3(b) .
  • ceramic can be used as a material of the dielectric multilayer film.
  • a noble metal film having an absorption in the hear infrared region by considering the thickness and the number of layers so as not to affect the transmittance of visible light of the near infrared ray cut filter.
  • the dielectric multilayer film specifically, a structure in which a high refractive index material and a low refractive index material are alternatively stacked can be preferably used.
  • a material constituting the high refractive index material layer a material having a refractive index of 1.7 or more can be used, and a material having a refractive index ranging from 1.7 to 2.5 is ordinarily selected.
  • titanium oxide titanium oxide (titania), zirconium oxide, tantalum pentoxide, niobium pentoxide, lanthanum oxide, yttrium oxide, zinc oxide, zinc sulfide, indium oxide, and materials containing these oxides as the main component and a small amount of titanium oxide, tin oxide and/or cerium oxide are exemplified. Among them, titanium oxide (titania) is preferred.
  • a material constituting the low refractive index material layer a material having a refractive index of 1.6 or less can be used, and a material having a refractive index ranging from 1.2 to 1.6 is ordinarily selected.
  • silica for example, silica, alumina, lanthanum fluoride, magnesium fluoride and sodium aluminum hexafluoride are exemplified. Among them, silica is preferred.
  • each of the high refractive index material layer and the low refractive index material layer is ordinarily a value from 0.1 to 0.5 k wherein ⁇ (nm) is a wavelength of infrared ray to be shielded.
  • ⁇ (nm) is a wavelength of infrared ray to be shielded.
  • the number of layers in the dielectric multilayer film is preferably from 5 to 50 layers, and more preferably from 10 to 45 layers.
  • the formation method of the dielectric multilayer film is not particularly limited, and includes, for example, a method wherein a high refractive index material and a low refractive index material are alternatively stacked, for example, by a CVD method, a sputtering method or a vacuum deposition method to form a dielectric multilayer film and the dielectric multilayer film is adhered to the film described above with an adhesive or a method wherein a high refractive index material and a low refractive index material are alternatively stacked directly on the film described above, for example, by a CVD method, a sputtering method or a vacuum deposition method to form to form a dielectric multilayer film.
  • a method may be taken, for example, of depositing the dielectric multilayer film onto the both surface of the substrate or of irradiating radiation, for example, an ultraviolet ray on the surface of the substrate on which the dielectric multilayer film is deposited.
  • irradiating radiation the irradiation may be performed while conducting the deposition of dielectric multilayer film, or may be separately performed after the deposition.
  • the glass substrate 30 further has an antireflection film (not shown in Fig.3 ).
  • the infrared ray reflecting film 35 may be formed on one surface of the glass substrate 30 and the antireflection film may be formed on the other surface of the glass substrate 30.
  • the antireflection film is further provided on the outermost surface of the image sensor chip comprising the solid-state imaging device substrate 100, the dye-containing layer 42 and the glass substrate 30 having the infrared ray reflecting film 35.
  • the antireflection film for use in the invention is not particularly limited so long as it can prevent or reduce the reflection of visible light.
  • the antireflection film can be formed, for example, by stacking from 1 to 5 layers of the high refractive index material and the low refractive index material described as to the dielectric multilayer film using, for example, a CVD method, a sputtering method or a vacuum deposition method.
  • the antireflection film may be formed by using an energy ray (for example, an ultraviolet ray) to generate an acid or the like, which is a condensation catalyst, thereby performing curing, that is, so-called photocuring ( JP-A-2000-109560 and JP-A-2000-1648 ).
  • an energy ray for example, an ultraviolet ray
  • the antireflection film may be formed by using an energy ray (for example, an ultraviolet ray) to generate an acid or the like, which is a condensation catalyst, thereby performing curing, that is, so-called photocuring ( JP-A-2000-109560 and JP-A-2000-1648 ).
  • a method of forming the antireflection film in the same manner as in the formation of dielectric multilayer film, or from the standpoint of increase in productivity a method of forming the antireflection film by the wet coating described above can be preferably used.
  • the thickness of the antireflection film is not particularly limited so long as the effect of the invention is not damaged, and it is preferably from 0.01 to 1.0 ⁇ m, and more preferably from 0.05 to 0.5 ⁇ m.
  • the dielectric multilayer film and the antireflection film used in the examples described in paragraph 0083 or later ofJP-A-2013-68688 can also be used.
  • composition components described below were mixed by a mixer to prepare a curable resin composition of Example 1.
  • PEGMEA Propylene glycol monomethyl ether acetate
  • Phthalocyanine-based dye B EXCOLOR TX-EX 708K produced by Nippon Shokubai Co., Ltd.
  • maximum absorption wavelength ( ⁇ max ) 755 nm (film)
  • a cyanine-based dye Daito Chmix 1371F produced by Daito Chemix Corp.
  • maximum absorption wavelength ( ⁇ max ) 805 n
  • Phthalocyanine-based dye B EXCOLOR TX-EX 708K produced by Nippon Shokubai Co., Ltd.
  • maximum absorption wavelength ( ⁇ max ) 755 nm (film)
  • a quaterrylene-based dye Liogen IR765 produced by BASF
  • maximum absorption wavelength ( ⁇ max ) 705 nm (film)
  • a cyanine-based dye Daito Chmix 1371F produced by Daito Chemix Corp.
  • maximum absorption wavelength ( ⁇ max ) 805 nm (film)
  • a quaterrylene-based dye Liogen IR765 produced by BASF
  • maximum absorption wavelength ( ⁇ max ) 705 nm (film)
  • a curable resin composition of Example 11 was prepared in the same manner as in Example 1 except that 25 parts by mass of ARONIX M-305 (produced by Toagosei Co., Ltd.) was used in place of 25 parts by mass of Polymerizable compound 1.
  • a curable resin composition of Example 12 was prepared in the same manner as in Example 1 except that 25 parts by mass of CYCLOMER P ACA 230AA (produced by Daicel Chemical Industries, Ltd.) was used in place of 25 parts by mass of Polymerizable compound 2.
  • a curable resin composition of Example 13 was prepared in the same manner as in Example 1 except that 25 parts by mass of ARONIX M-305 (produced by Toagosei Co., Ltd.) and 25 parts by mass of CYCLOMER P ACA 230AA (produced by Daicel Chemical Industries, Ltd.) were used in place of 25 parts by mass of Polymerizable compound 1 and 25 parts by mass of Polymerizable compound 2, respectively.
  • a curable resin composition of Example 14 was prepared in the same manner as in Example 1 except that 49.5 parts by mass of propylene glycol monomethyl ether (PGME) was used in place of 49.5 parts by mass of PGMEA.
  • PGME propylene glycol monomethyl ether
  • CMOS sensor equipped with a plurality of light-receiving elements composed of photodiode (light-receiving unit size 1.0 ⁇ m x 1.0 ⁇ m) having a pixel light-receiving unit pitch of 2.0 ⁇ m and 2592 pixels (X axis direction) x 1944 pixels (Y axis direction) arranged two-dimensionally at a certain arrangement pitch on a substrate, an insulating layer (silicon oxide) having a wiring layer composed of Al and a light-shielding layer, a passivation layer (silicon nitride), and a waveguide (silicon nitride) was prepared.
  • photodiode light-receiving unit size 1.0 ⁇ m x 1.0 ⁇ m
  • pixel light-receiving unit pitch 2.0 ⁇ m and 2592 pixels (X axis direction) x 1944 pixels (Y axis direction) arranged two-dimensionally at a certain arrangement pitch on a substrate
  • an insulating layer silicon
  • the thickness of the passivation layer was set to 0.3 ⁇ m
  • the thickness of the insulating layer intervening between the passivation layer and the waveguide was set to 0.3 ⁇ m
  • the thickness of the waveguide was set to 2.1 ⁇ m.
  • the entrance plane dimension of the waveguide was set to 1.5 ⁇ m x 1.5 ⁇ m
  • the exit plane dimension of the waveguide was set to 1.0 ⁇ m x 1.0 ⁇ m same as the dimension of the photodiode.
  • the refractive index of the passivation layer was 2.0
  • the refractive index of the insulating layer was 1.46
  • the refractive index of the waveguide was 1.88
  • the refractive index of the insulating layer outside of the waveguide was 1.46.
  • the value of the refractive index, including henceforth, is a value at a wavelength of 550 nm, unless particularly specified in the wavelength.
  • a photocurable type acrylic transparent resin material (CT-2020L produced by Fujifilm Electronic Materials Co., Ltd.) was spincoated on the passivation layer, followed by performing prebake, ultraviolet ray entire surface exposure and postbake to form a lower planarizing layer (thickness: 0.3 ⁇ m).
  • CT-2020L produced by Fujifilm Electronic Materials Co., Ltd.
  • the materials described above were spincoated in the formation order of G, R and B, followed by performing prebake, exposure by a 1/5 reduction type i-line stepper, development and postbake to form a color filter (film thickness: 0.8 ⁇ m).
  • a color filter film thickness: 0.8 ⁇ m.
  • Material for G was coated on the lower planarizing layer, and after performing exposure and development, postbake (220°C for 10 minutes) was conducted to form a green filter in a checkerboard-like pattern.
  • Material for R was coated so as to cover the green filter, and after exposure using a photomask and development, postbake (220°C for 10 minutes) was conducted to form a red filter.
  • Material for B was coated so as to cover the red filter and the green filter, and after exposure using a photomask and development, postbake (220°C for 10 minutes) was conducted to form a blue filter.
  • the refractive index of the red filter was 1.59 (wavelength: 620 nm)
  • the refractive index of the green filter was 1.60 (wavelength: 550 nm)
  • the refractive index of the blue filter was 1.61 (wavelength: 450 nm).
  • a photocurable type acrylic transparent resin material (CT-2020L produced by Fujifilm Electronic Materials Co., Ltd.) was spincoated on the color filter, followed by conducting prebake, ultraviolet ray entire surface exposure and postbake to form an upper planarizing layer.
  • the thickness of the upper planarizing layer formed was 0.3 ⁇ m.
  • the refractive index of the upper planarizing layer measured in the as manner as described above was 1.56.
  • MFR401L produced by JSR Corp. was spincoated as a microlens material on the upper planarizing layer, and prebake, exposure by a 1/5 reduction type i-line stepper, development, post exposure and melt flow by postbake were performed to form a microlens (height: 0.657 ⁇ m).
  • the refractive index of the microlens formed in the as manner as described above it was 1.61.
  • the developer 1.19% by mass solution of TMAH (tetramethylammonium hydroxide) was used.
  • window opening of a bonding pad portion was performed. Specifically, a positive resist (positive resist for i-line PFI-27 produced by Sumitomo Chemical Co., Ltd.) was spincoated, and then, prebake, exposure using a photomask having a pattern corresponding to a bonding pad portion and a scribe portion, and development were performed. Thus, a resist pattern having apertures in the bonding pad portion and the scribe portion was formed, and oxygen ashing was performed using the resist pattern as a mask to remove the planarizing layer on the portion by etching. Then, the positive resist was removed using a resist peeling liquid.
  • a positive resist positive resist for i-line PFI-27 produced by Sumitomo Chemical Co., Ltd.
  • a coating film was formed on the solid-state imaging device obtained using each of the curable resin compositions of Examples 1 to 14 according to a slit coat method (baker applicator YBA-3 Type produced by Yoshimitsu Seiki Co., Ltd., slit width adjusted to 250 ⁇ m), and then after performing preheating at 100°C for 2 minutes, postheating at 140°C for 10 minutes was conducted.
  • a dye-containing layer having a film thickness of about 100 ⁇ m was obtained.
  • a deposition temperature of 200°C was obtained.
  • Each total thickness of the dielectric multilayer film was about 5.5 ⁇ m.
  • the glass substrate was stuck on the dye-containing layer using an adhesive.
  • a camera lens was combined with the solid-state imaging device thus-produced, and taking sensitivity in the valid imaging region (chief ray incident angle: 0°) as 100%, relative sensitivity in each green pixel was measured at the chief ray incident angle of 5°, 10°, 15°, 20°, 25° and 30°. It was confirmed from the results that the shading was inhibited.
  • a coating film was formed by the same method as in the formation of dye-containing layer using the curable resin composition of Example 1 except that a surface of the solid-state imaging device obtained by removing the positive resist using the resist peeling liquid was subjected to a surface hydrophilization treatment by Method 1 described below to obtain a dye-containing layer having a film thickness of about 100 ⁇ m.
  • Method 1 A plasma ashing treatment was performed using U-621 (produced by Hitachi High-Technologies Corp.) under conditions of Ar flow rate of 1,000 ml/min, O 2 flow rate of 10 ml/min, pressure of 1Pa and 800 W for 10 seconds.
  • the adhesion property between the surface of the solid-state imaging device and the dye-containing layer was evaluated by a cross-cut method described below.
  • a coating film was formed by the same method as in the formation of dye-containing layer using the curable resin composition of Example 2 except that a surface of the solid-state imaging device obtained by removing the positive resist using the resist peeling liquid was subjected to a surface hydrophilization treatment by Method 1 described above to obtain a dye-containing layer having a film thickness of about 100 ⁇ m.
  • a coating film was formed by the same method as in the formation of dye-containing layer using the curable resin composition of Example 3 except that a surface of the solid-state imaging device obtained by removing the positive resist using the resist peeling liquid was subjected to a surface hydrophilization treatment by Method 1 described above to obtain a dye-containing layer having a film thickness of about 100 ⁇ m
  • a curable resin composition capable of producing an image sensor chip in which the color shading is suppressed can be provided.
  • a curable resin composition which can produce an image sensor chip in which a stack functioning as an infrared ray cut filter and including, for example, a dye-containing layer and an infrared ray reflecting film and a surface of a solid-state imaging device substrate are closely contacted with each other without a space and by which the incident angle dependence of light received can be suppressed, a production method of image sensor chip using the same, and an image sensor chip can be provided.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Optical Filters (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
EP13858244.0A 2012-11-30 2013-11-27 Härtbare harzzusammensetzung und bildsensorchpherstellungsverfahren und bildsensorchip damit Withdrawn EP2927716A4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012263643 2012-11-30
PCT/JP2013/081979 WO2014084288A1 (ja) 2012-11-30 2013-11-27 硬化性樹脂組成物、これを用いたイメージセンサチップの製造方法及びイメージセンサチップ

Publications (2)

Publication Number Publication Date
EP2927716A1 true EP2927716A1 (de) 2015-10-07
EP2927716A4 EP2927716A4 (de) 2015-12-30

Family

ID=50827920

Family Applications (1)

Application Number Title Priority Date Filing Date
EP13858244.0A Withdrawn EP2927716A4 (de) 2012-11-30 2013-11-27 Härtbare harzzusammensetzung und bildsensorchpherstellungsverfahren und bildsensorchip damit

Country Status (8)

Country Link
US (1) US9620542B2 (de)
EP (1) EP2927716A4 (de)
JP (1) JP6140593B2 (de)
KR (1) KR20150081315A (de)
CN (1) CN104854486A (de)
SG (1) SG11201504182RA (de)
TW (1) TWI598419B (de)
WO (1) WO2014084288A1 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017121572A1 (en) * 2016-01-13 2017-07-20 Ams Ag An optoelectronic device with a refractive element and a method of producing such an optoelectronic device
EP3202855A4 (de) * 2014-10-03 2017-08-30 FUJIFILM Corporation Nahinfrarot-absorbierende zusammensetzung, härtbare zusammensetzung, gehärteter film, nahinfrarot-sperrfilter, festkörperbildgebungselement, infrarotsensor, kameramodul, verarbeiteter farbstoff und verfahren zur herstellung eines verarbeiteten farbstoffes
US11118059B2 (en) 2016-02-03 2021-09-14 Fujifilm Corporation Film, film forming method, optical filter, laminate, solid image pickup element, image display device, and infrared sensor

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014126642A (ja) * 2012-12-26 2014-07-07 Adeka Corp 波長カットフィルタ
TWI667243B (zh) * 2014-06-30 2019-08-01 日商富士軟片股份有限公司 Near-infrared absorbing composition, near-infrared cut filter, near-infrared cut filter manufacturing method, solid-state imaging device, and camera module
WO2016088645A1 (ja) 2014-12-04 2016-06-09 Jsr株式会社 固体撮像装置
TWI675907B (zh) 2015-01-21 2019-11-01 日商Jsr股份有限公司 固體攝像裝置
TW201628179A (zh) * 2015-01-21 2016-08-01 Jsr 股份有限公司 固體攝像裝置及紅外線吸收性組成物
WO2016194527A1 (ja) 2015-05-29 2016-12-08 富士フイルム株式会社 近赤外線吸収性色素多量体、組成物、膜、光学フィルタ、パターン形成方法および装置
WO2016195031A1 (ja) 2015-06-05 2016-12-08 Jsr株式会社 固体撮像装置、感放射線性組成物、着色剤分散液及びカラーフィルタ
DE102015007830B4 (de) * 2015-06-18 2017-12-28 e.solutions GmbH Optische Baugruppe, elektronisches Gerät und Kraftfahrzeug mit einer optischen Baugruppe sowie Verfahren zum Herstellen einer optischen Baugruppe
CN106883541B (zh) * 2015-12-16 2021-04-02 张家港康得新石墨烯应用科技有限公司 蓝膜组合物、未固化胶、蓝色基膜、其制备方法及其应用
JP6626905B2 (ja) * 2016-01-15 2019-12-25 東洋インキScホールディングス株式会社 固体撮像素子用近赤外線吸収性組成物およびフィルタ
US10310144B2 (en) * 2016-06-09 2019-06-04 Intel Corporation Image sensor having photodetectors with reduced reflections
CN109477916B (zh) * 2016-07-01 2021-06-29 富士胶片株式会社 图像传感器用彩色滤光片、图像传感器及图像传感器用彩色滤光片的制造方法
JP6818468B2 (ja) * 2016-08-25 2021-01-20 キヤノン株式会社 光電変換装置及びカメラ
JP2018200423A (ja) * 2017-05-29 2018-12-20 ソニーセミコンダクタソリューションズ株式会社 撮像装置、および電子機器
JP2018200980A (ja) 2017-05-29 2018-12-20 ソニーセミコンダクタソリューションズ株式会社 撮像装置および固体撮像素子、並びに電子機器
WO2019039159A1 (ja) * 2017-08-24 2019-02-28 富士フイルム株式会社 硬化性組成物、膜、近赤外線カットフィルタ、固体撮像素子、画像表示装置および赤外線センサ
WO2019167876A1 (ja) * 2018-02-27 2019-09-06 Jsr株式会社 光学フィルターおよび光学フィルターを用いた装置
US20220082371A1 (en) * 2019-03-15 2022-03-17 Dow Global Technologies Llc Film thickness gauge by near-infrared hyperspecral imaging
WO2022064896A1 (ja) * 2020-09-23 2022-03-31 富士フイルム株式会社 組成物、膜、光学フィルタ、固体撮像素子、画像表示装置、赤外線センサ、カメラモジュール、化合物および赤外線吸収剤

Family Cites Families (127)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3479185A (en) 1965-06-03 1969-11-18 Du Pont Photopolymerizable compositions and layers containing 2,4,5-triphenylimidazoyl dimers
DE2033769B2 (de) 1969-07-11 1980-02-21 Ppg Industries, Inc., Pittsburgh, Pa. (V.St.A.) Bis-<2-acryloxyäthyl)hexahydrophthalat enthaltende Gemische und Herstellungsverfahren
JPS4841708B1 (de) 1970-01-13 1973-12-07
JPS506034B1 (de) 1970-08-11 1975-03-10
DE2064079C2 (de) 1970-12-28 1982-09-09 Hoechst Ag, 6000 Frankfurt Photopolymerisierbares Gemisch
JPS5324989B2 (de) 1971-12-09 1978-07-24
JPS5230490B2 (de) 1972-03-21 1977-08-09
DE2361041C3 (de) 1973-12-07 1980-08-14 Hoechst Ag, 6000 Frankfurt Photopolymerisierbares Gemisch
JPS5311314B2 (de) 1974-09-25 1978-04-20
US4224212A (en) 1977-07-15 1980-09-23 Imperial Chemical Industries Limited Dispersing agents, dispersions containing these agents and paints and inks made from the dispersions
DE2822190A1 (de) 1978-05-20 1979-11-22 Hoechst Ag Photopolymerisierbares gemisch
DE2822189A1 (de) 1978-05-20 1980-04-17 Hoechst Ag Photopolymerisierbares gemisch
US4311783A (en) 1979-08-14 1982-01-19 E. I. Du Pont De Nemours And Company Dimers derived from unsymmetrical 2,4,5,-triphenylimidazole compounds as photoinitiators
DE3036694A1 (de) 1980-09-29 1982-06-03 Hoechst Ag, 6000 Frankfurt Gummielastische, ethylenisch ungesaettigte polyurethane und dieselben enthaltendes durch strahlung polymerisierbares gemisch
DE3048502A1 (de) 1980-12-22 1982-07-22 Hoechst Ag, 6000 Frankfurt Durch strahlung polymerisierbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
NL8300155A (nl) 1983-01-17 1984-08-16 Philips Nv Registratie-element met een pyrylium- of thiopyrylium-squarylium kleurstoflaag en nieuwe pyrylium- of thiopyrylium-squarylium verbindingen.
JPH0629285B2 (ja) 1983-10-14 1994-04-20 三菱化成株式会社 光重合性組成物
GB8408259D0 (en) 1984-03-30 1984-05-10 Ici Plc Printing apparatus
US4622286A (en) 1985-09-16 1986-11-11 E. I. Du Pont De Nemours And Company Photoimaging composition containing admixture of leuco dye and 2,4,5-triphenylimidazolyl dimer
JP2677786B2 (ja) * 1986-07-10 1997-11-17 ソニー株式会社 固体撮像装置の製造方法
DE3710282A1 (de) 1987-03-28 1988-10-13 Hoechst Ag Photopolymerisierbares gemisch und daraus hergestelltes aufzeichnungsmaterial
DE3710281A1 (de) 1987-03-28 1988-10-06 Hoechst Ag Photopolymerisierbares gemisch und daraus hergestelltes aufzeichnungsmaterial
DE3710279A1 (de) 1987-03-28 1988-10-06 Hoechst Ag Polymerisierbare verbindungen und diese enthaltendes durch strahlung polymerisierbares gemisch
JP2893531B2 (ja) 1989-04-13 1999-05-24 三菱化学株式会社 ポリエステルマクロモノマー
DE3930687A1 (de) 1989-09-14 1991-04-11 Byk Chemie Gmbh Phosphorsaeureester, verfahren zu deren herstellung und deren verwendung als dispergiermittel
CA2011515C (en) 1990-03-05 1994-10-11 Roger Boulanger Method for producing a non-woven fabric with a thermally activated adhesive surface, resulting product and applications thereof
JPH0423868A (ja) 1990-05-17 1992-01-28 Nippon Shokubai Co Ltd 新規フタロシアニン化合物及びそれらを用いてなる近赤外線吸収材料
JPH0439361A (ja) 1990-06-04 1992-02-10 Nippon Shokubai Co Ltd 新規フタロシアニン化合物,その製造方法及びそれらを用いてなる近赤外線吸収材料
JP2907624B2 (ja) 1991-02-28 1999-06-21 株式会社日本触媒 新規含フッ素フタロシアニン化合物、その製造方法、およびそれらを含んでなる近赤外線吸収材料
JPH0768256B2 (ja) 1991-08-01 1995-07-26 株式会社ジャパンエナジー 新規イミダゾールシラン化合物及びその製造方法並びにそれを用いる金属表面処理剤
JP3278451B2 (ja) 1992-02-10 2002-04-30 株式会社日本触媒 新規フタロシアニン化合物およびその製造方法
JP3238183B2 (ja) 1992-02-10 2001-12-10 株式会社日本触媒 新規フタロシアニン化合物およびその製造方法
JPH05222047A (ja) 1992-02-14 1993-08-31 Nippon Shokubai Co Ltd 新規フタロシアニン化合物およびその製造方法
JP2812624B2 (ja) 1992-04-14 1998-10-22 株式会社日本触媒 新規含フッ素フタロシアニン化合物、その製造方法、およびそれを含んでなる近赤外線吸収材料
DE69320241T2 (de) 1992-05-06 1999-04-29 Kyowa Hakko Kogyo Kk Chemisch amplifizierte Resistzusammensetzung
JP2746293B2 (ja) 1992-07-08 1998-05-06 株式会社日本触媒 新規フタロシアニン化合物、その製造方法およびそれらを含んでなる近赤外線吸収材料
JP2633170B2 (ja) * 1992-08-20 1997-07-23 呉羽化学工業株式会社 光学フィルター
US5466755A (en) 1992-08-20 1995-11-14 Kureha, Kagaku Kogyo Kabushiki Kaisha Optical filter
JP3014221B2 (ja) 1992-09-30 2000-02-28 株式会社日本触媒 新規含フッ素フタロシアニン化合物、その製造方法、およびそれを含んでなる近赤外線吸収材料
JP3576182B2 (ja) 1993-02-04 2004-10-13 株式会社日本触媒 新規含フッ素フタロシアニン化合物、その製造方法、それを含む近赤外線吸収材料およびそれらを含む光記録媒体
GB9306222D0 (en) 1993-03-25 1993-05-19 Zeneca Ltd Dispersants
JPH06192584A (ja) 1993-09-01 1994-07-12 Nippon Shokubai Co Ltd 新規フタロシアニン化合物、その製造方法およびそれらを含んでなる近赤外線吸収材料
JP3455915B2 (ja) 1993-09-24 2003-10-14 Jsr株式会社 カラーフィルタ用感放射線性組成物およびカラーフィルタ
JPH07118551A (ja) 1993-10-22 1995-05-09 Nippon Shokubai Co Ltd 新規含フッ素フタロシアニン化合物、その製造方法、それを含む近赤外線吸収材料、およびそれらを含む光記録媒体
JPH07118552A (ja) 1993-10-22 1995-05-09 Nippon Shokubai Co Ltd 新規含フッ素フタロシアニン化合物、その製造方法、それを含む近赤外線吸収材料、およびそれらを含む光記録媒体
JP3421428B2 (ja) 1994-05-27 2003-06-30 日立化成工業株式会社 着色画像形成材料を含む感光液、これを用いた感光性エレメント及びカラーフィルターの製造法
JPH08225751A (ja) 1994-10-26 1996-09-03 Nippon Shokubai Co Ltd 新規フタロシアニン化合物、その製造方法およびそれらを用いた光記録媒体
JPH08120186A (ja) 1994-10-26 1996-05-14 Nippon Shokubai Co Ltd 新規フタロシアニン化合物、その製法およびそれらを用いた光記録媒体
JPH0977994A (ja) 1995-09-18 1997-03-25 Toyo Ink Mfg Co Ltd 非水系用顔料分散剤、およびそれを含有する顔料組成物、ならびに非水系顔料分散体
JP3718915B2 (ja) 1995-10-16 2005-11-24 味の素株式会社 顔料分散剤
JP3444734B2 (ja) 1995-11-20 2003-09-08 株式会社日本触媒 フタロシアニン化合物、その製造方法およびそれらを用いた光記録媒体
JPH1062986A (ja) 1996-08-21 1998-03-06 Fuji Photo Film Co Ltd 感放射線性着色組成物
JP3963524B2 (ja) 1997-05-20 2007-08-22 株式会社日本触媒 フタロシアニン化合物、その製造方法およびそれらを用いた光記録媒体
JP3963509B2 (ja) 1996-10-14 2007-08-22 株式会社日本触媒 フタロシアニン化合物、その製造方法およびそれを用いた光記録媒体
TW452575B (en) 1996-12-06 2001-09-01 Ciba Sc Holding Ag New Α-aminoacetophenone photoinitiators and photopolymerizable compositions comprising these photoinitiators
JP3959143B2 (ja) 1996-12-26 2007-08-15 株式会社日本触媒 新規フタロシアニン化合物、その製造方法および近赤外吸収材料
JPH10270672A (ja) 1997-03-25 1998-10-09 Sony Corp 固体撮像素子
JP3946309B2 (ja) 1997-04-10 2007-07-18 富士フイルム株式会社 着色感光性組成物
JP3867177B2 (ja) 1997-04-30 2007-01-10 Jsr株式会社 カラーフィルタ用感放射線性組成物
JP3939822B2 (ja) * 1997-08-07 2007-07-04 協立化学産業株式会社 近赤外線吸収材料、その合成方法、および近赤外線吸収性樹脂組成物
JPH11271969A (ja) 1998-01-21 1999-10-08 Mitsubishi Chemical Corp 光重合性組成物及び感光性平版印刷版
JP3226504B2 (ja) 1998-02-03 2001-11-05 株式会社日本触媒 フタロシアニン化合物、その製造方法およびその用途
JPH11277997A (ja) * 1998-03-31 1999-10-12 Dainippon Printing Co Ltd 転写捺染用金属板
US6359090B1 (en) 1998-06-09 2002-03-19 Kerr Corporation Polymerizable dispersant
JP4058808B2 (ja) 1998-06-18 2008-03-12 Jsr株式会社 光硬化性組成物および硬化膜
SG77689A1 (en) 1998-06-26 2001-01-16 Ciba Sc Holding Ag New o-acyloxime photoinitiators
JP4265039B2 (ja) 1998-08-04 2009-05-20 Jsr株式会社 光硬化性組成物および硬化膜
DK199901098A (da) 1998-08-18 2000-02-19 Ciba Sc Holding Ag Sylfonyloximer til i-linie-fotoresists med høj følsomhed og høj resisttykkelse
JP2000063691A (ja) 1998-08-19 2000-02-29 Nippon Shokubai Co Ltd フタロシアニン化合物およびこれを用いてなる近赤外吸収色素
JP2000190430A (ja) 1998-10-21 2000-07-11 Tomoegawa Paper Co Ltd 赤外線カットオフフィルム
JP3721298B2 (ja) 1999-07-30 2005-11-30 株式会社日本触媒 フタロシアニン化合物およびその製造方法ならびにこれを用いてなる近赤外吸収色素
JP4422866B2 (ja) 1999-09-16 2010-02-24 株式会社クレハ 光学フィルタ及びその製造方法
JP2001125255A (ja) 1999-10-27 2001-05-11 Fuji Photo Film Co Ltd 感光性平版印刷版
NL1016815C2 (nl) 1999-12-15 2002-05-14 Ciba Sc Holding Ag Oximester-fotoinitiatoren.
JP2002273191A (ja) 2001-03-21 2002-09-24 Dainippon Printing Co Ltd 顔料分散剤および感光性着色組成物
US6849679B2 (en) 2001-05-21 2005-02-01 Ciba Specialty Chemicals Corporation Pigment compositions with modified block copolymer dispersants
US7189489B2 (en) 2001-06-11 2007-03-13 Ciba Specialty Chemicals Corporation Oxime ester photoiniators having a combined structure
MXPA04001483A (es) 2001-08-21 2004-07-30 Ciba Sc Holding Ag Mono y bis-acilfosfina oxidos y sulfuro batrocromicos y su uso como fotoiniciadores.
JP4064681B2 (ja) 2002-02-14 2008-03-19 富士フイルム株式会社 顔料分散剤、それを含む顔料分散組成物及び着色感光性組成物
EP1341235A3 (de) 2002-02-28 2006-05-10 Canon Kabushiki Kaisha Bildaufnahmegerät
JP2003258220A (ja) * 2002-02-28 2003-09-12 Canon Inc 撮像素子及び撮像装置
JP4278923B2 (ja) 2002-06-12 2009-06-17 株式会社日本触媒 フタロシアニン化合物ならびにその製造方法および用途
JP4428911B2 (ja) 2002-07-05 2010-03-10 Jsr株式会社 カラーフィルタ用感放射線性組成物、カラーフィルタおよびカラー液晶表示素子
JP2004200360A (ja) * 2002-12-18 2004-07-15 Toppan Printing Co Ltd 固体撮像素子及びその製造方法
GB0219938D0 (en) 2002-08-28 2002-10-02 Avecia Ltd Compound
JP4142973B2 (ja) 2003-03-28 2008-09-03 株式会社日本触媒 硬化性樹脂組成物およびその用途
AU2004276119A1 (en) 2003-09-26 2005-04-07 Kureha Corporation Absorptive composition for infrared ray and absorptive resin composition for infrared ray
JP4644423B2 (ja) * 2003-09-30 2011-03-02 富士フイルム株式会社 カラー固体撮像素子及びこのカラー固体撮像素子を用いた固体撮像装置並びにデジタルカメラ
JP4648637B2 (ja) 2004-02-04 2011-03-09 株式会社日本触媒 カルボキシル基および/またはスルホン酸基を有するフタロシアニン化合物ならびにその製造方法
JP4447393B2 (ja) * 2004-07-23 2010-04-07 Hoya株式会社 光学多層膜付きガラス部材、及び該ガラス部材を用いた光学素子
JP4020150B1 (ja) 2005-07-08 2007-12-12 東洋インキ製造株式会社 分散剤、その製造方法、及び該分散剤を含む顔料分散体
JP5046515B2 (ja) 2005-12-19 2012-10-10 株式会社日本触媒 フタロシアニン化合物並びにその製造方法及び用途
KR100655045B1 (ko) 2005-12-30 2006-12-06 제일모직주식회사 감광성 수지 조성물 및 이를 이용한 블랙 매트릭스
JP5312743B2 (ja) 2006-02-01 2013-10-09 富士フイルム株式会社 オキシム化合物及びそれを含む感光性組成物
JP5354863B2 (ja) 2006-02-24 2013-11-27 富士フイルム株式会社 オキシム誘導体、光重合性組成物、カラーフィルタおよびその製造方法
JP5171005B2 (ja) 2006-03-17 2013-03-27 富士フイルム株式会社 高分子化合物およびその製造方法、並びに顔料分散剤
JP4958461B2 (ja) * 2006-03-30 2012-06-20 富士フイルム株式会社 近赤外吸収色素含有硬化性組成物
JP2007322744A (ja) 2006-05-31 2007-12-13 Fujifilm Corp 着色感光性樹脂組成物、及び感光性樹脂転写材料、並びに、カラーフィルタ、カラーフィルタの製造方法、及び液晶表示装置
JP5219408B2 (ja) 2006-06-02 2013-06-26 富士フイルム株式会社 顔料分散組成物、光硬化性組成物、それを用いたカラーフィルタおよびカラーフィルタの製造方法
JP2008009206A (ja) 2006-06-30 2008-01-17 Fujifilm Corp 近赤外吸収フィルター
JP5191181B2 (ja) 2006-09-01 2013-04-24 富士フイルム株式会社 顔料分散組成物、光硬化性組成物、カラーフィルタ、及びカラーフィルタの製造方法
JP5085256B2 (ja) 2006-09-27 2012-11-28 富士フイルム株式会社 化合物及びその互変異性体、金属錯体化合物、感光性着色硬化性組成物、カラーフィルタ、及びその製造方法
JP2008182223A (ja) 2006-12-28 2008-08-07 Fujifilm Corp 固体撮像装置の接合方法および固体撮像装置
JP2008250074A (ja) 2007-03-30 2008-10-16 Fujifilm Corp 感光性樹脂組成物、感光性フィルム、感光性積層体、永久パターン形成方法、及びプリント基板
JP2008268267A (ja) * 2007-04-16 2008-11-06 Nippon Shokubai Co Ltd ハードコート用樹脂組成物
JP5320760B2 (ja) 2007-07-27 2013-10-23 三菱化学株式会社 カラーフィルタ用着色組成物、カラーフィルタ、及び液晶表示装置
JP5496482B2 (ja) 2007-08-27 2014-05-21 富士フイルム株式会社 新規化合物、光重合性組成物、カラーフィルタ用光重合性組成物、カラーフィルタ、及びその製造方法、固体撮像素子、並びに、平版印刷版原版
JP2009099591A (ja) 2007-10-12 2009-05-07 Toshiba Corp 固体撮像素子及びその製造方法
JP4799543B2 (ja) 2007-12-27 2011-10-26 株式会社東芝 半導体パッケージ及びカメラモジュール
JP5371449B2 (ja) 2008-01-31 2013-12-18 富士フイルム株式会社 樹脂、顔料分散液、着色硬化性組成物、これを用いたカラーフィルタ及びその製造方法
JP5334624B2 (ja) 2008-03-17 2013-11-06 富士フイルム株式会社 着色硬化性組成物、カラーフィルタ、及びカラーフィルタの製造方法
JP5538688B2 (ja) 2008-05-30 2014-07-02 富士フイルム株式会社 着色硬化性組成物、カラーフィルタ、その製造方法、及び、固体撮像素子
JP5340102B2 (ja) 2008-10-03 2013-11-13 富士フイルム株式会社 分散組成物、重合性組成物、遮光性カラーフィルタ、固体撮像素子、液晶表示装置、ウェハレベルレンズ、及び撮像ユニット
JP5293120B2 (ja) 2008-11-28 2013-09-18 住友化学株式会社 有機エレクトロルミネッセンス素子およびその製造方法
JP5470842B2 (ja) * 2008-12-26 2014-04-16 株式会社ニコン 光学フィルタ及び受光装置
JP5618118B2 (ja) 2009-01-09 2014-11-05 日立化成株式会社 感光性樹脂組成物,並びにこれを用いた感光性エレメント,ソルダーレジスト及びプリント配線板
JP5490475B2 (ja) 2009-09-24 2014-05-14 富士フイルム株式会社 近赤外吸収性色素を含有する硬化性組成物、インク用組成物および近赤外線吸収フィルタの製造方法
JP5325805B2 (ja) 2010-01-29 2013-10-23 株式会社タムラ製作所 感光性樹脂組成物およびその硬化膜を用いたプリント配線板
JP2011178328A (ja) * 2010-03-03 2011-09-15 Equos Research Co Ltd 車両、及び車両制御プログラム
JP5676171B2 (ja) 2010-07-26 2015-02-25 シャープ株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP5674399B2 (ja) * 2010-09-22 2015-02-25 富士フイルム株式会社 重合性組成物、感光層、永久パターン、ウエハレベルレンズ、固体撮像素子、及び、パターン形成方法
JP5383755B2 (ja) * 2010-12-17 2014-01-08 株式会社日本触媒 光選択透過フィルター、樹脂シート及び固体撮像素子
JP5701742B2 (ja) 2010-12-28 2015-04-15 富士フイルム株式会社 遮光膜形成用チタンブラック分散組成物、それを含有する感放射線性組成物、遮光膜の製造方法、及び固体撮像素子
JP5283747B2 (ja) * 2011-02-09 2013-09-04 富士フイルム株式会社 着色感放射線性組成物、カラーフィルタ、その製造方法、固体撮像素子、及び液晶表示装置
JP5377595B2 (ja) 2011-03-25 2013-12-25 富士フイルム株式会社 着色感放射線性組成物、カラーフィルタ、着色パターンの製造方法、カラーフィルタの製造方法、固体撮像素子、及び液晶表示装置
JP2013041141A (ja) * 2011-08-17 2013-02-28 Asahi Glass Co Ltd 撮像装置、固体撮像素子、撮像装置用レンズ、及び近赤外光カットフィルタ
JP5741347B2 (ja) 2011-09-21 2015-07-01 旭硝子株式会社 光学フィルタ及びこれを用いた撮像装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3202855A4 (de) * 2014-10-03 2017-08-30 FUJIFILM Corporation Nahinfrarot-absorbierende zusammensetzung, härtbare zusammensetzung, gehärteter film, nahinfrarot-sperrfilter, festkörperbildgebungselement, infrarotsensor, kameramodul, verarbeiteter farbstoff und verfahren zur herstellung eines verarbeiteten farbstoffes
WO2017121572A1 (en) * 2016-01-13 2017-07-20 Ams Ag An optoelectronic device with a refractive element and a method of producing such an optoelectronic device
US10644047B2 (en) 2016-01-13 2020-05-05 Ams Ag Optoelectronic device with a refractive element and a method of producing such an optoelectronic device
US11118059B2 (en) 2016-02-03 2021-09-14 Fujifilm Corporation Film, film forming method, optical filter, laminate, solid image pickup element, image display device, and infrared sensor

Also Published As

Publication number Publication date
TW201428068A (zh) 2014-07-16
SG11201504182RA (en) 2015-06-29
WO2014084288A1 (ja) 2014-06-05
US9620542B2 (en) 2017-04-11
TWI598419B (zh) 2017-09-11
EP2927716A4 (de) 2015-12-30
KR20150081315A (ko) 2015-07-13
CN104854486A (zh) 2015-08-19
JP6140593B2 (ja) 2017-05-31
US20150287756A1 (en) 2015-10-08
JP2014130343A (ja) 2014-07-10

Similar Documents

Publication Publication Date Title
US9620542B2 (en) Curable resin composition, production method of image sensor chip using the same, and image sensor chip
US9657182B2 (en) Curable resin composition, production method of image sensor chip using the same, and image sensor chip
JP5953322B2 (ja) 赤外線吸収組成物ないしは赤外線吸収組成物キット、これを用いた赤外線カットフィルタ及びその製造方法、並びに、カメラモジュール及びその製造方法
JP5674399B2 (ja) 重合性組成物、感光層、永久パターン、ウエハレベルレンズ、固体撮像素子、及び、パターン形成方法
US9389505B2 (en) Polymerizable composition for solder resist, and solder resist pattern formation method
KR101668668B1 (ko) 중합성 조성물
JP5757749B2 (ja) 重合性組成物
JP5723699B2 (ja) 遮光性組成物、遮光性組成物の製造方法、ソルダレジスト、パターン形成方法、及び固体撮像素子
WO2014142259A1 (ja) 固体撮像素子及びその製造方法、赤外光カットフィルタ形成用硬化性組成物、カメラモジュール
KR101925820B1 (ko) 적외광 차폐 조성물, 적외광 차단 필터, 고체 촬상 소자
JP5965639B2 (ja) 赤外線カットフィルタの製造方法、該製造方法に用いられる赤外線吸収性液状組成物、及びカメラモジュールの製造方法
KR20180112055A (ko) 감광성 조성물, 컬러 필터, 패턴 형성 방법, 고체 촬상 소자 및 화상 표시 장치
KR20200063261A (ko) 착색 조성물, 컬러 필터, 패턴 형성 방법, 고체 촬상 소자, 및 화상 표시 장치
KR20130132460A (ko) 중합성 조성물, 및 이것을 사용한 감광층, 영구 패턴, 웨이퍼 레벨 렌즈, 고체 촬상 소자 및 패턴형성방법
WO2019044505A1 (ja) 樹脂組成物、膜、近赤外線カットフィルタ、赤外線透過フィルタ、固体撮像素子、画像表示装置、赤外線センサおよびカメラモジュール
JP2011141512A (ja) 黒色硬化性組成物、遮光性カラーフィルタ、固体撮像素子、ウエハレベルレンズ、遮光膜およびその製造方法
WO2017130883A1 (ja) 着色組成物、カラーフィルタ、パターン形成方法、固体撮像素子および画像表示装置

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20150529

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

RA4 Supplementary search report drawn up and despatched (corrected)

Effective date: 20151202

RIC1 Information provided on ipc code assigned before grant

Ipc: H04N 5/335 20110101ALI20151126BHEP

Ipc: C08L 101/00 20060101ALI20151126BHEP

Ipc: H01L 27/14 20060101ALI20151126BHEP

Ipc: C09D 201/00 20060101ALI20151126BHEP

Ipc: G02B 5/22 20060101AFI20151126BHEP

Ipc: H04N 5/225 20060101ALI20151126BHEP

Ipc: C09D 7/12 20060101ALI20151126BHEP

DAX Request for extension of the european patent (deleted)
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20160629