EP1869625A2 - Mehrschichtiger verbundkörper mit elektronischer funktion - Google Patents

Mehrschichtiger verbundkörper mit elektronischer funktion

Info

Publication number
EP1869625A2
EP1869625A2 EP06723879A EP06723879A EP1869625A2 EP 1869625 A2 EP1869625 A2 EP 1869625A2 EP 06723879 A EP06723879 A EP 06723879A EP 06723879 A EP06723879 A EP 06723879A EP 1869625 A2 EP1869625 A2 EP 1869625A2
Authority
EP
European Patent Office
Prior art keywords
components
multilayer composite
composite body
layers
common
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06723879A
Other languages
German (de)
English (en)
French (fr)
Inventor
Andreas Ullmann
Alexander Knobloch
Merlin Welker
Walter Fix
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PolyIC GmbH and Co KG
Original Assignee
PolyIC GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PolyIC GmbH and Co KG filed Critical PolyIC GmbH and Co KG
Publication of EP1869625A2 publication Critical patent/EP1869625A2/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07718—Constructional details, e.g. mounting of circuits in the carrier the record carrier being manufactured in a continuous process, e.g. using endless rolls
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0393—Flexible materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10166—Transistor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10174—Diode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors

Definitions

  • the invention relates to a multilayer composite body with electronic function, in particular an electronic assembly comprising a plurality of organic electronic components.
  • Electronic components are known, for example from WO 02/15264.
  • an electronic device is fabricated by sequentially depositing the various functional layers (conductive, semiconducting, insulating, and again conducting layers) on a substrate.
  • Several electronic components can be combined on a board, as described for example in DE 101 51 440 C1.
  • a disadvantage of the assemblies currently used is that for a more complex assembly, a plurality of individual components individually and sequentially prepared, electrically connected and arranged must be. This requires various costly work and process steps.
  • Object of the present invention is to provide a structure for an assembly available that is simple, mass production suitable and inexpensive to implement and in which a variety of essential electronic components, ie active and passive components alike, as a transistor, field-effect transistor , electrical contact, resistance, conductor resistance, coil, capacitor, Rectifier or the like can be combined as desired and in particular with a diode.
  • essential electronic components ie active and passive components alike, as a transistor, field-effect transistor , electrical contact, resistance, conductor resistance, coil, capacitor, Rectifier or the like can be combined as desired and in particular with a diode.
  • the invention relates to a multilayer composite body, comprising at least two different electronic components, which are common at least two, each applied in one operation layers, which may be homogeneous or structured.
  • one of the layers that is common to the components of the composite according to the invention is a homogeneous or structured semiconducting layer and / or another, for example also a layer, which may not be structured due to its high viscosity during application.
  • all components of the composite body so different components and any number thereof, simultaneously and on the same substrate, for example in a continuous process, produced.
  • some components include layers that have no functionality in the device.
  • the carrier layer ie the substrate common to all the components.
  • all components of a multilayer composite body are built up of contiguous layers, wherein some of the layers are structured and again other homogeneous layers are homogeneous. These layers are produced simultaneously for all the components present in the composite body and, if appropriate, structured suitably for the respective component.
  • the multilayer composite body assemblies are preferably realized, in which at least one diode and another different component are included.
  • Realized rectifier wherein at least two different components, a diode and a capacitance in the composite body are present.
  • a complex rectifier can also be realized in the multilayer composite body if at least three different components, at least two diodes, a capacitance and through-contact are contained in the assembly forming the composite body.
  • the multilayer composite body has, for example, at least three different components, a diode, a capacitance and a transistor.
  • At least four different components are used to construct a transponder in the multilayer composite body.
  • the multilayer composite body can in principle contain all sorts of components such as transistor, field-effect transistor, electrical contact, resistance, conductor resistance, coil, capacitor, rectifier or the like as often as desired and in particular with one or more diode (s) in combination.
  • components such as transistor, field-effect transistor, electrical contact, resistance, conductor resistance, coil, capacitor, rectifier or the like as often as desired and in particular with one or more diode (s) in combination.
  • the multilayer composite body in the two conductive layers has two different - with respect to their work function - different materials.
  • the conductive layer which is in contact with the semiconducting layer is made of silver and the material of the counterelectrode is then a material with different work function, in particular a base material such as copper, nickel, chromium, cobalt or the like.
  • all components be prepared by four structured layers and their well-thought superimposition in a manufacturing process.
  • the typical structure seen from bottom to top, is the sequence substrate, conductive layer, semiconducting layer, insulating layer and upper, conductive layer.
  • a "bottom-up" layer sequence is also conceivable and encompassed by the inventive idea.
  • the two conductive layers of the composite body are made of different materials, which in particular have different work function or different Fermi level.
  • This is realized for example by the use of metallic layers of two dissimilar metals and / or alloys.
  • Particularly preferred is the use of silver as an electrode adjacent to the semiconducting layer, in particular as a conductive layer in contact with the semiconductor layer and another metal / alloy with a work function different from silver as counterelectrode.
  • FIG. 1 shows a schematic cross section through a fully integrated printable electronics, such as is required for a complete transponder circuit.
  • FIG. 2 again shows all the components which can also be seen in FIG. 1, but here the semiconductive layer at the location of the diode is not drawn to the level of the upper electrode of the other components, but the upper electrode of the diode is deeper here placed.
  • FIG. 3 shows a structure for the voltage supply, in which case the components diode, capacitor and through contact are produced simultaneously on a substrate.
  • FIG. 4 shows a composite body which has an electrical
  • the substrate 1 can be seen below.
  • insulating materials with a smooth surface can be used, flexible and rigid materials can equally be used.
  • flexible films such as PET film or other polymer plastic films, glass, quartz, ceramic or other are used in place.
  • the layer 2 following the substrate 1 is the first conductive layer or the lower electrode 2, which is applied in a structured manner.
  • the source and drain electrodes are produced here, which are covered by the following semiconductor layer.
  • the conductive layer 2 only conductive materials can be used, it is immaterial whether it is organic or inorganic or a composite material.
  • the work function is adjusted to the Fermi level of the semiconductor so that the difference to the Fermi level of the Semiconductor is preferably 0.3 eV or less. Then it is ensured that the charge carriers pass smoothly from the semiconducting material into the conducting one.
  • the first and lower electrode layers are followed by the semiconducting layer 3, which may be applied unstructured because of its viscosity.
  • Preferred materials for the semiconducting layer are organic materials such as P3AT, P3DHTT, regioregular polyalkylthiophenes, polyfluorene derivatives, PPVs, in general and / or other polymers, for example with a conjugated main chain or a freely mobile one
  • Electron pair in the main chain used.
  • the semiconductive layer 3 can also be applied structured by printing, for example.
  • the insulating layer 4 is made of, for example, soluble printable material.
  • materials for the insulating layer organic, soluble materials such as e.g. Polystyrene derivatives, PMMA or generally insulating polymers used.
  • the structured insulating layer 4 is followed by an upper conductive layer 5, which in turn is preferably structured.
  • conductive organic and inorganic materials and / or composite materials are used. Particular preference is given to using metals whose work function differs from that of the material of the lower conductive layer (counterelectrode).
  • materials are used whose work function in the range of 3 to 5 eV, in particular from 3.0 eV to 4.6 eV or more, for example, is here copper, nickel, chromium, cobalt, manganese, etc. successfully used.
  • the following components are now realized on the substrate 1 of FIG.
  • FIG. 2 again shows all the components and all layers which can also be seen in FIG. 1, but here the semiconductive layer 3 at the location of the diode c does not become electrical through-contact up to the level of the upper electrode 5 of the other components a, transistor b, capacitor d and resistor e pulled, but the upper electrode 5 of the diode c is here deeper, to the level of the insulating layer 4, set.
  • layer 1 is the substrate, layer 2, a conductive layer and 3 the semiconductor layer, 4 the insulating layer and 5 the counter-electrode, which in turn is structured.
  • the sequence of components is provided as follows: far left outside is the through-hole 1, next to the diode c and subsequent to the diode c, the capacitor d.
  • the composite body shown here can rectify the alternating voltage originating from an antenna.
  • the semiconductor is slightly thicker in the diode region c applied, which can be achieved for example via a at a simultaneous production of the components by a decor pressure.
  • FIG. 4 shows a multilayer composite body which combines an electrical contact, a transistor and a resistor or a coil.
  • this layer structure and this arrangement of the components electrical contact a, transistor b, and resistor or coil e at least PFETs (polymer field effect transistor), inverters, ring oscillators, flip-flops, frequency dividers and / or counters can be constructed.
  • PFETs polymer field effect transistor
  • the layer structure again corresponds to that known from the other figures. Although no diode is realized here, the conductive material of the upper electrode 5 and the lower electrode 2 may be quite different, especially in terms of its work function.
  • the encapsulation and / or sealing of the components which may comprise a wide variety of materials and / or laminates, is still recommended as topmost layer or finish.
  • the encapsulation / seal may be made of a rigid or flexible material.
  • the essential components of electronic devices can be produced side by side and / or in succession on a substrate by continuously applied and / or structured layers, such as transistor, field effect transistor, electrical contact, resistance, track resistance, inductance, diode, capacitor and rectifiers are realized.
  • the gate electrode Due to the cost-effective and mass production suitable production of all components of the assembly at the same time and in a continuous process can be contained in individual components layers that have no special function there, for example, in a field effect transistor and / or in a capacitor, the gate electrode have a work function different from the source / drain electrode, wherein the difference of the work function here has no functionality.
  • a semiconductor is present, which is unnecessary at the site and not functional.
  • the essential components of complex electronic devices can be produced side by side and / or one after another on a substrate by continuously applied and / or structured layers, such as field effect transistor, electrical contact, resistance, conductor resistance, coil, Diode, capacitor and rectifier.
  • the invention opens up for the first time a possibility for a structure of an entire assembly such as an RFID tag, wherein the entire day can be realized with all components in a manufacturing process. As a result, a cost-effective and mass production suitable manufacturing method is described for the first time.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
EP06723879A 2005-04-15 2006-03-31 Mehrschichtiger verbundkörper mit elektronischer funktion Withdrawn EP1869625A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005017655A DE102005017655B4 (de) 2005-04-15 2005-04-15 Mehrschichtiger Verbundkörper mit elektronischer Funktion
PCT/EP2006/002916 WO2006108514A2 (de) 2005-04-15 2006-03-31 Mehrschichtiger verbundkörper mit elektronischer funktion

Publications (1)

Publication Number Publication Date
EP1869625A2 true EP1869625A2 (de) 2007-12-26

Family

ID=37084894

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06723879A Withdrawn EP1869625A2 (de) 2005-04-15 2006-03-31 Mehrschichtiger verbundkörper mit elektronischer funktion

Country Status (8)

Country Link
US (1) US7812343B2 (ja)
EP (1) EP1869625A2 (ja)
JP (1) JP4977126B2 (ja)
KR (1) KR101244124B1 (ja)
CN (1) CN101160594B (ja)
DE (1) DE102005017655B4 (ja)
TW (1) TWI314369B (ja)
WO (1) WO2006108514A2 (ja)

Families Citing this family (6)

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DE102005031448A1 (de) 2005-07-04 2007-01-11 Polyic Gmbh & Co. Kg Aktivierbare optische Schicht
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DE102008036736B4 (de) * 2008-08-07 2010-04-29 Abb Ag Elektrisches Installationsschaltgerät mit einer elektronischen Baugruppe
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DE102013102052B4 (de) 2013-03-01 2018-07-26 Infineon Technologies Ag Chip-Anordnung

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US20080203383A1 (en) 2008-08-28
DE102005017655B4 (de) 2008-12-11
KR101244124B1 (ko) 2013-03-14
WO2006108514A2 (de) 2006-10-19
TWI314369B (en) 2009-09-01
JP4977126B2 (ja) 2012-07-18
JP2008536227A (ja) 2008-09-04
CN101160594B (zh) 2014-03-05
KR20080002833A (ko) 2008-01-04
TW200707818A (en) 2007-02-16
WO2006108514A3 (de) 2007-04-05
US7812343B2 (en) 2010-10-12
DE102005017655A1 (de) 2006-11-02
CN101160594A (zh) 2008-04-09

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