WO2006108514A2 - Mehrschichtiger verbundkörper mit elektronischer funktion - Google Patents
Mehrschichtiger verbundkörper mit elektronischer funktion Download PDFInfo
- Publication number
- WO2006108514A2 WO2006108514A2 PCT/EP2006/002916 EP2006002916W WO2006108514A2 WO 2006108514 A2 WO2006108514 A2 WO 2006108514A2 EP 2006002916 W EP2006002916 W EP 2006002916W WO 2006108514 A2 WO2006108514 A2 WO 2006108514A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- components
- multilayer composite
- composite body
- layers
- common
- Prior art date
Links
- 239000002131 composite material Substances 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 18
- 239000003990 capacitor Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 7
- 230000005669 field effect Effects 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 238000010924 continuous production Methods 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 63
- 238000004519 manufacturing process Methods 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 241000702619 Porcine parvovirus Species 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910003471 inorganic composite material Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- -1 organic Substances 0.000 description 1
- 238000004803 parallel plate viscometry Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920002848 poly(3-alkoxythiophenes) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
- G06K19/07718—Constructional details, e.g. mounting of circuits in the carrier the record carrier being manufactured in a continuous process, e.g. using endless rolls
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
- G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/202—Integrated devices comprising a common active layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0393—Flexible materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10166—Transistor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10174—Diode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
Definitions
- the invention relates to a multilayer composite body with electronic function, in particular an electronic assembly comprising a plurality of organic electronic components.
- Electronic components are known, for example from WO 02/15264.
- an electronic device is fabricated by sequentially depositing the various functional layers (conductive, semiconducting, insulating, and again conducting layers) on a substrate.
- Several electronic components can be combined on a board, as described for example in DE 101 51 440 C1.
- a disadvantage of the assemblies currently used is that for a more complex assembly, a plurality of individual components individually and sequentially prepared, electrically connected and arranged must be. This requires various costly work and process steps.
- Object of the present invention is to provide a structure for an assembly available that is simple, mass production suitable and inexpensive to implement and in which a variety of essential electronic components, ie active and passive components alike, as a transistor, field-effect transistor , electrical contact, resistance, conductor resistance, coil, capacitor, Rectifier or the like can be combined as desired and in particular with a diode.
- essential electronic components ie active and passive components alike, as a transistor, field-effect transistor , electrical contact, resistance, conductor resistance, coil, capacitor, Rectifier or the like can be combined as desired and in particular with a diode.
- the invention relates to a multilayer composite body, comprising at least two different electronic components, which are common at least two, each applied in one operation layers, which may be homogeneous or structured.
- one of the layers that is common to the components of the composite according to the invention is a homogeneous or structured semiconducting layer and / or another, for example also a layer, which may not be structured due to its high viscosity during application.
- all components of the composite body so different components and any number thereof, simultaneously and on the same substrate, for example in a continuous process, produced.
- some components include layers that have no functionality in the device.
- the carrier layer ie the substrate common to all the components.
- all components of a multilayer composite body are built up of contiguous layers, wherein some of the layers are structured and again other homogeneous layers are homogeneous. These layers are produced simultaneously for all the components present in the composite body and, if appropriate, structured suitably for the respective component.
- the multilayer composite body assemblies are preferably realized, in which at least one diode and another different component are included.
- Realized rectifier wherein at least two different components, a diode and a capacitance in the composite body are present.
- a complex rectifier can also be realized in the multilayer composite body if at least three different components, at least two diodes, a capacitance and through-contact are contained in the assembly forming the composite body.
- the multilayer composite body has, for example, at least three different components, a diode, a capacitance and a transistor.
- At least four different components are used to construct a transponder in the multilayer composite body.
- the multilayer composite body can in principle contain all sorts of components such as transistor, field-effect transistor, electrical contact, resistance, conductor resistance, coil, capacitor, rectifier or the like as often as desired and in particular with one or more diode (s) in combination.
- components such as transistor, field-effect transistor, electrical contact, resistance, conductor resistance, coil, capacitor, rectifier or the like as often as desired and in particular with one or more diode (s) in combination.
- the multilayer composite body in the two conductive layers has two different - with respect to their work function - different materials.
- the conductive layer which is in contact with the semiconducting layer is made of silver and the material of the counterelectrode is then a material with different work function, in particular a base material such as copper, nickel, chromium, cobalt or the like.
- all components be prepared by four structured layers and their well-thought superimposition in a manufacturing process.
- the typical structure seen from bottom to top, is the sequence substrate, conductive layer, semiconducting layer, insulating layer and upper, conductive layer.
- a "bottom-up" layer sequence is also conceivable and encompassed by the inventive idea.
- the two conductive layers of the composite body are made of different materials, which in particular have different work function or different Fermi level.
- This is realized for example by the use of metallic layers of two dissimilar metals and / or alloys.
- Particularly preferred is the use of silver as an electrode adjacent to the semiconducting layer, in particular as a conductive layer in contact with the semiconductor layer and another metal / alloy with a work function different from silver as counterelectrode.
- FIG. 1 shows a schematic cross section through a fully integrated printable electronics, such as is required for a complete transponder circuit.
- FIG. 2 again shows all the components which can also be seen in FIG. 1, but here the semiconductive layer at the location of the diode is not drawn to the level of the upper electrode of the other components, but the upper electrode of the diode is deeper here placed.
- FIG. 3 shows a structure for the voltage supply, in which case the components diode, capacitor and through contact are produced simultaneously on a substrate.
- FIG. 4 shows a composite body which has an electrical
- the substrate 1 can be seen below.
- insulating materials with a smooth surface can be used, flexible and rigid materials can equally be used.
- flexible films such as PET film or other polymer plastic films, glass, quartz, ceramic or other are used in place.
- the layer 2 following the substrate 1 is the first conductive layer or the lower electrode 2, which is applied in a structured manner.
- the source and drain electrodes are produced here, which are covered by the following semiconductor layer.
- the conductive layer 2 only conductive materials can be used, it is immaterial whether it is organic or inorganic or a composite material.
- the work function is adjusted to the Fermi level of the semiconductor so that the difference to the Fermi level of the Semiconductor is preferably 0.3 eV or less. Then it is ensured that the charge carriers pass smoothly from the semiconducting material into the conducting one.
- the first and lower electrode layers are followed by the semiconducting layer 3, which may be applied unstructured because of its viscosity.
- Preferred materials for the semiconducting layer are organic materials such as P3AT, P3DHTT, regioregular polyalkylthiophenes, polyfluorene derivatives, PPVs, in general and / or other polymers, for example with a conjugated main chain or a freely mobile one
- Electron pair in the main chain used.
- the semiconductive layer 3 can also be applied structured by printing, for example.
- the insulating layer 4 is made of, for example, soluble printable material.
- materials for the insulating layer organic, soluble materials such as e.g. Polystyrene derivatives, PMMA or generally insulating polymers used.
- the structured insulating layer 4 is followed by an upper conductive layer 5, which in turn is preferably structured.
- conductive organic and inorganic materials and / or composite materials are used. Particular preference is given to using metals whose work function differs from that of the material of the lower conductive layer (counterelectrode).
- materials are used whose work function in the range of 3 to 5 eV, in particular from 3.0 eV to 4.6 eV or more, for example, is here copper, nickel, chromium, cobalt, manganese, etc. successfully used.
- the following components are now realized on the substrate 1 of FIG.
- FIG. 2 again shows all the components and all layers which can also be seen in FIG. 1, but here the semiconductive layer 3 at the location of the diode c does not become electrical through-contact up to the level of the upper electrode 5 of the other components a, transistor b, capacitor d and resistor e pulled, but the upper electrode 5 of the diode c is here deeper, to the level of the insulating layer 4, set.
- layer 1 is the substrate, layer 2, a conductive layer and 3 the semiconductor layer, 4 the insulating layer and 5 the counter-electrode, which in turn is structured.
- the sequence of components is provided as follows: far left outside is the through-hole 1, next to the diode c and subsequent to the diode c, the capacitor d.
- the composite body shown here can rectify the alternating voltage originating from an antenna.
- the semiconductor is slightly thicker in the diode region c applied, which can be achieved for example via a at a simultaneous production of the components by a decor pressure.
- FIG. 4 shows a multilayer composite body which combines an electrical contact, a transistor and a resistor or a coil.
- this layer structure and this arrangement of the components electrical contact a, transistor b, and resistor or coil e at least PFETs (polymer field effect transistor), inverters, ring oscillators, flip-flops, frequency dividers and / or counters can be constructed.
- PFETs polymer field effect transistor
- the layer structure again corresponds to that known from the other figures. Although no diode is realized here, the conductive material of the upper electrode 5 and the lower electrode 2 may be quite different, especially in terms of its work function.
- the encapsulation and / or sealing of the components which may comprise a wide variety of materials and / or laminates, is still recommended as topmost layer or finish.
- the encapsulation / seal may be made of a rigid or flexible material.
- the essential components of electronic devices can be produced side by side and / or in succession on a substrate by continuously applied and / or structured layers, such as transistor, field effect transistor, electrical contact, resistance, track resistance, inductance, diode, capacitor and rectifiers are realized.
- the gate electrode Due to the cost-effective and mass production suitable production of all components of the assembly at the same time and in a continuous process can be contained in individual components layers that have no special function there, for example, in a field effect transistor and / or in a capacitor, the gate electrode have a work function different from the source / drain electrode, wherein the difference of the work function here has no functionality.
- a semiconductor is present, which is unnecessary at the site and not functional.
- the essential components of complex electronic devices can be produced side by side and / or one after another on a substrate by continuously applied and / or structured layers, such as field effect transistor, electrical contact, resistance, conductor resistance, coil, Diode, capacitor and rectifier.
- the invention opens up for the first time a possibility for a structure of an entire assembly such as an RFID tag, wherein the entire day can be realized with all components in a manufacturing process. As a result, a cost-effective and mass production suitable manufacturing method is described for the first time.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008505763A JP4977126B2 (ja) | 2005-04-15 | 2006-03-31 | 電子機能を備える多層複合体 |
US11/911,429 US7812343B2 (en) | 2005-04-15 | 2006-03-31 | Multilayer composite body having an electronic function |
CN200680012163.5A CN101160594B (zh) | 2005-04-15 | 2006-03-31 | 具有电子功能的多层复合体 |
EP06723879A EP1869625A2 (de) | 2005-04-15 | 2006-03-31 | Mehrschichtiger verbundkörper mit elektronischer funktion |
KR1020077023640A KR101244124B1 (ko) | 2005-04-15 | 2006-03-31 | 전자 기능을 구비한 다층 복합체 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102005017655.0 | 2005-04-15 | ||
DE102005017655A DE102005017655B4 (de) | 2005-04-15 | 2005-04-15 | Mehrschichtiger Verbundkörper mit elektronischer Funktion |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006108514A2 true WO2006108514A2 (de) | 2006-10-19 |
WO2006108514A3 WO2006108514A3 (de) | 2007-04-05 |
Family
ID=37084894
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2006/002916 WO2006108514A2 (de) | 2005-04-15 | 2006-03-31 | Mehrschichtiger verbundkörper mit elektronischer funktion |
Country Status (8)
Country | Link |
---|---|
US (1) | US7812343B2 (de) |
EP (1) | EP1869625A2 (de) |
JP (1) | JP4977126B2 (de) |
KR (1) | KR101244124B1 (de) |
CN (1) | CN101160594B (de) |
DE (1) | DE102005017655B4 (de) |
TW (1) | TWI314369B (de) |
WO (1) | WO2006108514A2 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005031448A1 (de) | 2005-07-04 | 2007-01-11 | Polyic Gmbh & Co. Kg | Aktivierbare optische Schicht |
EP2038817B1 (de) * | 2006-06-07 | 2015-04-01 | Nxp B.V. | Halbleiterchip, transponder und verfahren zum herstellen eines transponders |
DE102007046679B4 (de) | 2007-09-27 | 2012-10-31 | Polyic Gmbh & Co. Kg | RFID-Transponder |
DE102008036736B4 (de) * | 2008-08-07 | 2010-04-29 | Abb Ag | Elektrisches Installationsschaltgerät mit einer elektronischen Baugruppe |
DE102008061928A1 (de) * | 2008-12-15 | 2010-06-17 | Polylc Gmbh & Co. Kg | Organisch elektronische Schaltung |
DE102013102052B4 (de) | 2013-03-01 | 2018-07-26 | Infineon Technologies Ag | Chip-Anordnung |
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EP1251720A2 (de) * | 2001-03-26 | 2002-10-23 | Pioneer Corporation | Organische Halbleiterdiode und organische Elektrolumineszente Anzeigevorrichtung |
EP1296280A1 (de) * | 1997-09-11 | 2003-03-26 | Precision Dynamics Corporation | RF-ID Etikett mit einem integriertem Schaltkreis aus organischen Materialen |
WO2004063806A1 (de) * | 2003-01-09 | 2004-07-29 | Polyic Gmbh & Co. Kg | Platine oder substrat für ein organisches elektronikgerät, sowie verwendung dazu |
US6859093B1 (en) * | 2000-11-28 | 2005-02-22 | Precision Dynamics Corporation | Rectifying charge storage device with bi-stable states |
DE10340641A1 (de) * | 2003-09-03 | 2005-04-07 | Siemens Ag | Strukturierung von Gate-Dielektrika in organischen Feldeffekt-Transistoren |
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GB723598A (en) | 1951-09-07 | 1955-02-09 | Philips Nv | Improvements in or relating to methods of producing electrically conductive mouldings from plastics |
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DE2102735B2 (de) | 1971-01-21 | 1979-05-10 | Transformatoren Union Ag, 7000 Stuttgart | Einrichtung zur Regelung des Mengendurchsatzes von Mühlen und Brechern |
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AU488652B2 (en) | 1973-09-26 | 1976-04-01 | Commonwealth Scientific And Industrial Research Organisation | Improvements in or relating to security tokens |
JPS543594B2 (de) | 1973-10-12 | 1979-02-24 | ||
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JPS54101176A (en) | 1978-01-26 | 1979-08-09 | Shinetsu Polymer Co | Contact member for push switch |
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TW200707818A (en) | 2007-02-16 |
US20080203383A1 (en) | 2008-08-28 |
DE102005017655A1 (de) | 2006-11-02 |
CN101160594A (zh) | 2008-04-09 |
KR20080002833A (ko) | 2008-01-04 |
TWI314369B (en) | 2009-09-01 |
WO2006108514A3 (de) | 2007-04-05 |
US7812343B2 (en) | 2010-10-12 |
EP1869625A2 (de) | 2007-12-26 |
CN101160594B (zh) | 2014-03-05 |
JP4977126B2 (ja) | 2012-07-18 |
DE102005017655B4 (de) | 2008-12-11 |
JP2008536227A (ja) | 2008-09-04 |
KR101244124B1 (ko) | 2013-03-14 |
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