EP1869625A2 - Multi-layer composite body having an electronic function - Google Patents

Multi-layer composite body having an electronic function

Info

Publication number
EP1869625A2
EP1869625A2 EP06723879A EP06723879A EP1869625A2 EP 1869625 A2 EP1869625 A2 EP 1869625A2 EP 06723879 A EP06723879 A EP 06723879A EP 06723879 A EP06723879 A EP 06723879A EP 1869625 A2 EP1869625 A2 EP 1869625A2
Authority
EP
European Patent Office
Prior art keywords
components
multilayer composite
composite body
layers
common
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06723879A
Other languages
German (de)
French (fr)
Inventor
Andreas Ullmann
Alexander Knobloch
Merlin Welker
Walter Fix
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PolyIC GmbH and Co KG
Original Assignee
PolyIC GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PolyIC GmbH and Co KG filed Critical PolyIC GmbH and Co KG
Publication of EP1869625A2 publication Critical patent/EP1869625A2/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07718—Constructional details, e.g. mounting of circuits in the carrier the record carrier being manufactured in a continuous process, e.g. using endless rolls
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0393—Flexible materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10166—Transistor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10174—Diode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors

Definitions

  • the invention relates to a multilayer composite body with electronic function, in particular an electronic assembly comprising a plurality of organic electronic components.
  • Electronic components are known, for example from WO 02/15264.
  • an electronic device is fabricated by sequentially depositing the various functional layers (conductive, semiconducting, insulating, and again conducting layers) on a substrate.
  • Several electronic components can be combined on a board, as described for example in DE 101 51 440 C1.
  • a disadvantage of the assemblies currently used is that for a more complex assembly, a plurality of individual components individually and sequentially prepared, electrically connected and arranged must be. This requires various costly work and process steps.
  • Object of the present invention is to provide a structure for an assembly available that is simple, mass production suitable and inexpensive to implement and in which a variety of essential electronic components, ie active and passive components alike, as a transistor, field-effect transistor , electrical contact, resistance, conductor resistance, coil, capacitor, Rectifier or the like can be combined as desired and in particular with a diode.
  • essential electronic components ie active and passive components alike, as a transistor, field-effect transistor , electrical contact, resistance, conductor resistance, coil, capacitor, Rectifier or the like can be combined as desired and in particular with a diode.
  • the invention relates to a multilayer composite body, comprising at least two different electronic components, which are common at least two, each applied in one operation layers, which may be homogeneous or structured.
  • one of the layers that is common to the components of the composite according to the invention is a homogeneous or structured semiconducting layer and / or another, for example also a layer, which may not be structured due to its high viscosity during application.
  • all components of the composite body so different components and any number thereof, simultaneously and on the same substrate, for example in a continuous process, produced.
  • some components include layers that have no functionality in the device.
  • the carrier layer ie the substrate common to all the components.
  • all components of a multilayer composite body are built up of contiguous layers, wherein some of the layers are structured and again other homogeneous layers are homogeneous. These layers are produced simultaneously for all the components present in the composite body and, if appropriate, structured suitably for the respective component.
  • the multilayer composite body assemblies are preferably realized, in which at least one diode and another different component are included.
  • Realized rectifier wherein at least two different components, a diode and a capacitance in the composite body are present.
  • a complex rectifier can also be realized in the multilayer composite body if at least three different components, at least two diodes, a capacitance and through-contact are contained in the assembly forming the composite body.
  • the multilayer composite body has, for example, at least three different components, a diode, a capacitance and a transistor.
  • At least four different components are used to construct a transponder in the multilayer composite body.
  • the multilayer composite body can in principle contain all sorts of components such as transistor, field-effect transistor, electrical contact, resistance, conductor resistance, coil, capacitor, rectifier or the like as often as desired and in particular with one or more diode (s) in combination.
  • components such as transistor, field-effect transistor, electrical contact, resistance, conductor resistance, coil, capacitor, rectifier or the like as often as desired and in particular with one or more diode (s) in combination.
  • the multilayer composite body in the two conductive layers has two different - with respect to their work function - different materials.
  • the conductive layer which is in contact with the semiconducting layer is made of silver and the material of the counterelectrode is then a material with different work function, in particular a base material such as copper, nickel, chromium, cobalt or the like.
  • all components be prepared by four structured layers and their well-thought superimposition in a manufacturing process.
  • the typical structure seen from bottom to top, is the sequence substrate, conductive layer, semiconducting layer, insulating layer and upper, conductive layer.
  • a "bottom-up" layer sequence is also conceivable and encompassed by the inventive idea.
  • the two conductive layers of the composite body are made of different materials, which in particular have different work function or different Fermi level.
  • This is realized for example by the use of metallic layers of two dissimilar metals and / or alloys.
  • Particularly preferred is the use of silver as an electrode adjacent to the semiconducting layer, in particular as a conductive layer in contact with the semiconductor layer and another metal / alloy with a work function different from silver as counterelectrode.
  • FIG. 1 shows a schematic cross section through a fully integrated printable electronics, such as is required for a complete transponder circuit.
  • FIG. 2 again shows all the components which can also be seen in FIG. 1, but here the semiconductive layer at the location of the diode is not drawn to the level of the upper electrode of the other components, but the upper electrode of the diode is deeper here placed.
  • FIG. 3 shows a structure for the voltage supply, in which case the components diode, capacitor and through contact are produced simultaneously on a substrate.
  • FIG. 4 shows a composite body which has an electrical
  • the substrate 1 can be seen below.
  • insulating materials with a smooth surface can be used, flexible and rigid materials can equally be used.
  • flexible films such as PET film or other polymer plastic films, glass, quartz, ceramic or other are used in place.
  • the layer 2 following the substrate 1 is the first conductive layer or the lower electrode 2, which is applied in a structured manner.
  • the source and drain electrodes are produced here, which are covered by the following semiconductor layer.
  • the conductive layer 2 only conductive materials can be used, it is immaterial whether it is organic or inorganic or a composite material.
  • the work function is adjusted to the Fermi level of the semiconductor so that the difference to the Fermi level of the Semiconductor is preferably 0.3 eV or less. Then it is ensured that the charge carriers pass smoothly from the semiconducting material into the conducting one.
  • the first and lower electrode layers are followed by the semiconducting layer 3, which may be applied unstructured because of its viscosity.
  • Preferred materials for the semiconducting layer are organic materials such as P3AT, P3DHTT, regioregular polyalkylthiophenes, polyfluorene derivatives, PPVs, in general and / or other polymers, for example with a conjugated main chain or a freely mobile one
  • Electron pair in the main chain used.
  • the semiconductive layer 3 can also be applied structured by printing, for example.
  • the insulating layer 4 is made of, for example, soluble printable material.
  • materials for the insulating layer organic, soluble materials such as e.g. Polystyrene derivatives, PMMA or generally insulating polymers used.
  • the structured insulating layer 4 is followed by an upper conductive layer 5, which in turn is preferably structured.
  • conductive organic and inorganic materials and / or composite materials are used. Particular preference is given to using metals whose work function differs from that of the material of the lower conductive layer (counterelectrode).
  • materials are used whose work function in the range of 3 to 5 eV, in particular from 3.0 eV to 4.6 eV or more, for example, is here copper, nickel, chromium, cobalt, manganese, etc. successfully used.
  • the following components are now realized on the substrate 1 of FIG.
  • FIG. 2 again shows all the components and all layers which can also be seen in FIG. 1, but here the semiconductive layer 3 at the location of the diode c does not become electrical through-contact up to the level of the upper electrode 5 of the other components a, transistor b, capacitor d and resistor e pulled, but the upper electrode 5 of the diode c is here deeper, to the level of the insulating layer 4, set.
  • layer 1 is the substrate, layer 2, a conductive layer and 3 the semiconductor layer, 4 the insulating layer and 5 the counter-electrode, which in turn is structured.
  • the sequence of components is provided as follows: far left outside is the through-hole 1, next to the diode c and subsequent to the diode c, the capacitor d.
  • the composite body shown here can rectify the alternating voltage originating from an antenna.
  • the semiconductor is slightly thicker in the diode region c applied, which can be achieved for example via a at a simultaneous production of the components by a decor pressure.
  • FIG. 4 shows a multilayer composite body which combines an electrical contact, a transistor and a resistor or a coil.
  • this layer structure and this arrangement of the components electrical contact a, transistor b, and resistor or coil e at least PFETs (polymer field effect transistor), inverters, ring oscillators, flip-flops, frequency dividers and / or counters can be constructed.
  • PFETs polymer field effect transistor
  • the layer structure again corresponds to that known from the other figures. Although no diode is realized here, the conductive material of the upper electrode 5 and the lower electrode 2 may be quite different, especially in terms of its work function.
  • the encapsulation and / or sealing of the components which may comprise a wide variety of materials and / or laminates, is still recommended as topmost layer or finish.
  • the encapsulation / seal may be made of a rigid or flexible material.
  • the essential components of electronic devices can be produced side by side and / or in succession on a substrate by continuously applied and / or structured layers, such as transistor, field effect transistor, electrical contact, resistance, track resistance, inductance, diode, capacitor and rectifiers are realized.
  • the gate electrode Due to the cost-effective and mass production suitable production of all components of the assembly at the same time and in a continuous process can be contained in individual components layers that have no special function there, for example, in a field effect transistor and / or in a capacitor, the gate electrode have a work function different from the source / drain electrode, wherein the difference of the work function here has no functionality.
  • a semiconductor is present, which is unnecessary at the site and not functional.
  • the essential components of complex electronic devices can be produced side by side and / or one after another on a substrate by continuously applied and / or structured layers, such as field effect transistor, electrical contact, resistance, conductor resistance, coil, Diode, capacitor and rectifier.
  • the invention opens up for the first time a possibility for a structure of an entire assembly such as an RFID tag, wherein the entire day can be realized with all components in a manufacturing process. As a result, a cost-effective and mass production suitable manufacturing method is described for the first time.

Abstract

The invention relates to a multi-layer composite body having an electronic function, especially an electronic subassembly which comprises a plurality of electroorganic components. The invention allows to construct an entire subassembly such as an RFID tag, whereby the entire tag and all its components can be produced in a single process.

Description

Mehrschichtiger Verbundkörper mit elektronischer FunktionMultilayer composite body with electronic function
Die Erfindung betrifft einen mehrschichtigen Verbundkörper mit elektronischer Funktion, insbesondere eine elektronische Baugruppe, welche mehrere organische elektronische Bauelemente umfasst.The invention relates to a multilayer composite body with electronic function, in particular an electronic assembly comprising a plurality of organic electronic components.
Bekannt sind elektronische Bauelemente, beispielsweise aus der WO 02/15264. In der Regel wird ein elektronisches Bauelement durch aufeinander folgendes Aufbringen der diversen funktionellen Schichten (leitende, halbleitende, isolierende und wiederum leitende Schicht) auf einem Substrat hergestellt. Mehrere elektronische Bauelemente können auf einer Platine kombiniert werden, wie beispielsweise in der DE 101 51 440 C1 beschrieben.Electronic components are known, for example from WO 02/15264. Typically, an electronic device is fabricated by sequentially depositing the various functional layers (conductive, semiconducting, insulating, and again conducting layers) on a substrate. Several electronic components can be combined on a board, as described for example in DE 101 51 440 C1.
Nachteilig an den derzeit verwendeten Baugruppen ist, dass für eine komplexere Baugruppe eine Vielzahl einzelner Komponenten einzeln und nacheinander hergestellt, elektrisch leitend verbunden und angeordnet werden müssen. Dazu sind verschiedene kostspielige Arbeits- und Prozessschritte nötig.A disadvantage of the assemblies currently used is that for a more complex assembly, a plurality of individual components individually and sequentially prepared, electrically connected and arranged must be. This requires various costly work and process steps.
Aufgabe der vorliegenden Erfindung ist es, einen Aufbau für eine Baugruppe zur Verfügung zu stellen, der einfach, massenfertigungstauglich und kostengünstig realisierbar ist und in dem eine Vielzahl essentieller elektronischer Bauelemente, also aktive und passive Komponenten gleichermaßen, wie ein Transistor, Feld-Effekt-Transistor, elektrischer Durchkontakt, Widerstand, Leiterbahnwiderstand, Spule, Kondensator, Gleichrichter oder ähnliches beliebig und insbesondere mit einer Diode kombinierbar sind.Object of the present invention is to provide a structure for an assembly available that is simple, mass production suitable and inexpensive to implement and in which a variety of essential electronic components, ie active and passive components alike, as a transistor, field-effect transistor , electrical contact, resistance, conductor resistance, coil, capacitor, Rectifier or the like can be combined as desired and in particular with a diode.
Gegenstand der Erfindung ist ein mehrschichtiger Verbundkörper, zumindest zwei unterschiedliche elektronische Bauelemente umfassend, denen zumindest zwei, jeweils in einem Arbeitsgang aufgebrachte Schichten, die homogen oder strukturiert sein können, gemeinsam sind.The invention relates to a multilayer composite body, comprising at least two different electronic components, which are common at least two, each applied in one operation layers, which may be homogeneous or structured.
Beispielsweise ist eine der Schichten, die den Bauelementen des Verbundkörpers nach der Erfindung gemeinsam ist, eine homogene oder strukturierte halbleitende und/oder eine andere, beispielsweise auch eine, unter Umständen wegen ihrer hohen Viskosität bei der Aufbringung nicht strukturierte, Schicht.For example, one of the layers that is common to the components of the composite according to the invention is a homogeneous or structured semiconducting layer and / or another, for example also a layer, which may not be structured due to its high viscosity during application.
Nach einer vorteilhaften Ausgestaltung der Erfindung werden alle Bauelemente des Verbundkörpers, also verschiedene Bauelemente und eine beliebige Anzahl davon, gleichzeitig und auf dem gleichen Substrat, beispielsweise in einem kontinuierlich ablaufenden Prozess, hergestellt. Dadurch kommt es vor, dass einige Bauelemente Schichten umfassen, die in dem Bauelement keine Funktionalität besitzen.According to an advantageous embodiment of the invention, all components of the composite body, so different components and any number thereof, simultaneously and on the same substrate, for example in a continuous process, produced. As a result, some components include layers that have no functionality in the device.
Ebenfalls bevorzugt ist eine der zumindest zwei, aber grundsätzlich auch fünf oder mehr Schichten, die den Bauelementen des Verbundkörpers gemeinsam ist, die Trägerschicht, also das allen Bauelementen gemeinsame Substrat.Likewise preferred is one of the at least two, but in principle also five or more layers, which is common to the components of the composite body, the carrier layer, ie the substrate common to all the components.
Nach einer bevorzugten Ausführungsform werden alle Bauelemente eines mehrschichtigen Verbundkörpers aus zusammenhängenden Schichten aufgebaut, wobei einige der Schichten strukturiert und wieder andere durchgehend homogene Schichten sind. Diese Schichten werden für alle, in dem Verbundkörper vorhandenen, Bauelemente gleichzeitig hergestellt und gegebenenfalls passend für das jeweilige Bauelement strukturiert. Mit dem mehrschichtigen Verbundkörper werden bevorzugt Baugruppen realisiert, in denen zumindest eine Diode und ein weiteres unterschiedliches Bauelement enthalten sind.According to a preferred embodiment, all components of a multilayer composite body are built up of contiguous layers, wherein some of the layers are structured and again other homogeneous layers are homogeneous. These layers are produced simultaneously for all the components present in the composite body and, if appropriate, structured suitably for the respective component. With the multilayer composite body assemblies are preferably realized, in which at least one diode and another different component are included.
Beispielsweise wird als mehrschichtiger Verbundkörper ein einfacherFor example, as a multilayer composite, it becomes easier
Gleichrichter realisiert, wobei zumindest zwei unterschiedliche Bauelemente, eine Diode und eine Kapazität im Verbundkörper vorhanden sind.Realized rectifier, wherein at least two different components, a diode and a capacitance in the composite body are present.
Auch ein komplexer Gleichrichter kann in dem mehrschichtigen Verbundkörper realisiert sein, wenn mindestens drei unterschiedliche Bauelemente, zumindest zwei Dioden, eine Kapazität und Durchkontakt in der Baugruppe, die den Verbundkörper bildet, enthalten sind.A complex rectifier can also be realized in the multilayer composite body if at least three different components, at least two diodes, a capacitance and through-contact are contained in the assembly forming the composite body.
Zum Aufbau eines einfachen Gleichrichters mit Modulator hat der mehrschichtige Verbundkörper beispielsweise mindestens drei verschiedene Bauelemente, eine Diode, eine Kapazität und einen Transistor.To construct a simple rectifier with modulator, the multilayer composite body has, for example, at least three different components, a diode, a capacitance and a transistor.
Schließlich kommen zum Aufbau eines Transponders bei dem mehrschichtigen Verbundkörper mindestens vier unterschiedliche Bauelemente vor, eine Diode, eine Kapazität, ein Transistor und ein oder mehrere Durchkontakte.Finally, at least four different components, a diode, a capacitor, a transistor and one or more vias, are used to construct a transponder in the multilayer composite body.
Der mehrschichtige Verbundkörper kann grundsätzlich alle möglichen Bauelemente wie Transistor, Feld-Effekt-Transistor, elektrischer Durchkontakt, Widerstand, Leiterbahnwiderstand, Spule, Kondensator, Gleichrichter oder ähnliches beliebig oft und insbesondere mit einer oder mehreren Diode(n) kombinierbar enthalten.The multilayer composite body can in principle contain all sorts of components such as transistor, field-effect transistor, electrical contact, resistance, conductor resistance, coil, capacitor, rectifier or the like as often as desired and in particular with one or more diode (s) in combination.
Bevorzugt hat der mehrschichtige Verbundkörper bei den beiden leitenden Schichten zwei - hinsichtlich ihrer Austrittsarbeit - verschiedene Materialien. Dabei ist es insbesondere bevorzugt, dass die leitende Schicht, die in Kontakt mit der halbleitenden Schicht ist, aus Silber ist und das Material der Gegenelektrode dann ein Material mit verschiedener Austrittsarbeit, insbesondere ein unedleres Material wie beispielsweise Kupfer, Nickel, Chrom, Cobalt oder ähnliches ist.Preferably, the multilayer composite body in the two conductive layers has two different - with respect to their work function - different materials. In this case, it is particularly preferred that the conductive layer which is in contact with the semiconducting layer is made of silver and the material of the counterelectrode is then a material with different work function, in particular a base material such as copper, nickel, chromium, cobalt or the like.
Bei der Herstellung der Baugruppe ist es besonders bevorzugt, dass alle Bauelemente durch vier strukturierte Schichten und deren gut durchdachte Überlagerung in einem Herstellungsprozess herzustellen sind.In the manufacture of the assembly, it is particularly preferred that all components be prepared by four structured layers and their well-thought superimposition in a manufacturing process.
Der typische Aufbau, von unten nach oben gesehen, ist dabei die Abfolge Substrat, leitfähige Schicht, halbleitende Schicht, isolierende Schicht und obere, leitfähige Schicht. Eine „bottom-up" Schichtabfolge ist auch denkbar und vom Erfindungsgedanken mit umfasst.The typical structure, seen from bottom to top, is the sequence substrate, conductive layer, semiconducting layer, insulating layer and upper, conductive layer. A "bottom-up" layer sequence is also conceivable and encompassed by the inventive idea.
Dabei ist es besonders bevorzugt, dass die beiden leitfähigen Schichten des Verbundkörpers aus verschiedenen Materialien, die insbesondere unterschiedliche Austrittsarbeit oder unterschiedliches Fermi - Niveau haben, gemacht sind. Dies wird beispielsweise durch die Verwendung metallischer Schichten aus zwei ungleichen Metallen und/oder Legierungen, realisiert. Insbesondere bevorzugt ist dabei die Verwendung von Silber als an die halbleitende Schicht angrenzende Elektrode, insbesondere als leitfähige Schicht in Kontakt mit der Halbleiterschicht und einem anderen Metall/einer anderen Legierung mit einer von Silber verschiedenen Austrittsarbeit als Gegenelektrode.In this case, it is particularly preferred that the two conductive layers of the composite body are made of different materials, which in particular have different work function or different Fermi level. This is realized for example by the use of metallic layers of two dissimilar metals and / or alloys. Particularly preferred is the use of silver as an electrode adjacent to the semiconducting layer, in particular as a conductive layer in contact with the semiconductor layer and another metal / alloy with a work function different from silver as counterelectrode.
Im Folgenden wird die Erfindung noch anhand von 4 Zeichnungen, die bevorzugte Ausführungsformen der Erfindung schematisch wiedergeben, näher erläutert.In the following, the invention will be explained in more detail with reference to 4 drawings, which schematically illustrate preferred embodiments of the invention.
Figur 1 zeigt einen schematischen Querschnitt durch eine voll integrierte druckbare Elektronik, wie sie z.B. für eine vollständige Transponderschaltung benötigt wird. Figur 2 zeigt noch einmal alle Bauelemente, die auch in Figur 1 zu sehen sind, allerdings wird hier die halbleitende Schicht an der Stelle der Diode nicht bis auf das Niveau der oberen Elektrode der anderen Bauelemente gezogen, sondern die obere Elektrode der Diode ist hier tiefer gelegt.Figure 1 shows a schematic cross section through a fully integrated printable electronics, such as is required for a complete transponder circuit. FIG. 2 again shows all the components which can also be seen in FIG. 1, but here the semiconductive layer at the location of the diode is not drawn to the level of the upper electrode of the other components, but the upper electrode of the diode is deeper here placed.
Figur 3 zeigt einen Aufbau zur Spannungsversorgung, hier werden die Bauelemente Diode, Kondensator und Durchkontakt gleichzeitig auf einem Substrat erzeugt.FIG. 3 shows a structure for the voltage supply, in which case the components diode, capacitor and through contact are produced simultaneously on a substrate.
Figur 4 schließlich zeigt einen Verbundkörper, der einen elektrischenFinally, FIG. 4 shows a composite body which has an electrical
Durchkontakt, einen Transistor und einen Widerstand und/oder eine Spule vereint.Through contact, a transistor and a resistor and / or a coil united.
In Figur 1 ist unten das Substrat 1 zu erkennen. Als Substrat können alle isolierenden Materialien mit einer glatten Oberfläche eingesetzt werden, es können flexible und starre Materialien gleichermaßen zum Einsatz kommen. Beispielsweise werden flexible Folien wie PET-Folie oder andere Polymer- Plastik-Folien, Glas, Quarz, Keramik oder anderes an der Stelle eingesetzt.In Figure 1, the substrate 1 can be seen below. As a substrate, all insulating materials with a smooth surface can be used, flexible and rigid materials can equally be used. For example, flexible films such as PET film or other polymer plastic films, glass, quartz, ceramic or other are used in place.
Die auf das Substrat 1 folgende Schicht 2 ist die erste leitfähige Schicht oder die untere Elektrode 2, die strukturiert aufgebracht wird. Nach einer vorteilhaften Ausgestaltung werden hier die Source und Drain Elektroden produziert, die durch die folgende Halbleiterschicht abgedeckt werden. Für die leitfähige Schicht 2 können nur leitfähige Materialien eingesetzt werden, wobei unwesentlich ist, ob es sich dabei um organische oder anorganische oder um ein Verbundmaterial handelt. Nach einer bevorzugten Ausführungsform wird als Material für die leitende Schicht, die in Kontakt mit der halbleitenden Schicht ist, ein Metall oder eine Legierung mit einer Austrittsarbeit, die im Bereich von 4.6 - 5.2 eV, bevorzugt bei 4.9eV liegt. Besonders bevorzugt wird an der Stelle Silber mit einer Austrittsarbeit von 4,9eV eingesetzt. Bei der Wahl des Materials wird bevorzugt darauf geachtet, dass die Austrittsarbeit an das Fermi-Niveau des Halbleiters so angeglichen ist, dass der Unterschied zum Fermi - Niveau des Halbleiters bevorzugt 0,3 eV oder weniger beträgt. Dann ist gewährleistet, dass die Ladungsträger problemlos vom halbleitenden Material in das leitende übergehen.The layer 2 following the substrate 1 is the first conductive layer or the lower electrode 2, which is applied in a structured manner. According to an advantageous embodiment, the source and drain electrodes are produced here, which are covered by the following semiconductor layer. For the conductive layer 2, only conductive materials can be used, it is immaterial whether it is organic or inorganic or a composite material. According to a preferred embodiment, as the material for the conductive layer which is in contact with the semiconductive layer, a metal or alloy having a work function that is in the range of 4.6 - 5.2 eV, preferably 4.9 eV. Particularly preferably, silver with a work function of 4.9 eV is used at the site. In the choice of material, it is preferably ensured that the work function is adjusted to the Fermi level of the semiconductor so that the difference to the Fermi level of the Semiconductor is preferably 0.3 eV or less. Then it is ensured that the charge carriers pass smoothly from the semiconducting material into the conducting one.
Auf die erste und untere Elektrodenschicht folgt die halbleitende Schicht 3, die wegen ihrer Viskosität unter Umständen unstrukturiert aufgebracht wird. Als Materialien für die halbleitende Schicht werden bevorzugt organische Materialien wie P3AT,P3DHTT, regioregulare - Polyalkylthiophenere, Polyfluoren - Derivate, PPVs, allgemein und/oder andere Polymere, beispielsweise mit konjugierter Hauptkette oder einem frei beweglichenThe first and lower electrode layers are followed by the semiconducting layer 3, which may be applied unstructured because of its viscosity. Preferred materials for the semiconducting layer are organic materials such as P3AT, P3DHTT, regioregular polyalkylthiophenes, polyfluorene derivatives, PPVs, in general and / or other polymers, for example with a conjugated main chain or a freely mobile one
Elektronenpaar in der Hauptkette, eingesetzt. Die halbleitende Schicht 3 kann auch beispielsweise durch Drucken strukturiert aufgebracht werden.Electron pair in the main chain, used. The semiconductive layer 3 can also be applied structured by printing, for example.
Darauf folgt bei den meisten elektronischen Bauelementen eine isolierende Schicht 4, die nur insoweit strukturiert aufgebracht werden muss, als an der/den Stellen auf dem Substrat, an denen Dioden oder Durchkontakte hergestellt werden, eine dielektrische oder isolierende Schicht ausgespart bleiben sollte, weil sie störend wirken würde. Die isolierende Schicht 4 ist beispielsweise aus löslichem druckbarem Material. Als Materialien für die isolierende Schicht werden bevorzugt organische, lösliche Materialien wie z.B. Polystyrol-Derivate, PMMA oder allgemein isolierende Polymere eingesetzt.This is followed in the case of most electronic components by an insulating layer 4 which has to be applied in a structured manner only if a dielectric or insulating layer should remain recessed at the point (s) on the substrate where diodes or vias are produced, because they are disturbing would work. The insulating layer 4 is made of, for example, soluble printable material. As materials for the insulating layer, organic, soluble materials such as e.g. Polystyrene derivatives, PMMA or generally insulating polymers used.
Als Abschluss der essentiellen Teile der elektronischen Bauelemente folgt auf die strukturierte isolierende Schicht 4 eine obere leitende Schicht 5, die wiederum bevorzugt strukturiert ist. Dabei werden leitende organische und anorganische Materialien und/oder Verbundmaterialien eingesetzt. Insbesondere bevorzugt werden Metalle eingesetzt, deren Austrittsarbeit von der des Materials der unteren leitenden Schicht (Gegenelektrode) verschieden ist. Nach einer Ausführungsform werden dabei Materialien eingesetzt, deren Austrittsarbeit im Bereich von 3 bis 5 eV, insbesondere von 3.0 eV bis 4,6 eV oder darüber liegen, beispielsweise kommt hier Kupfer, Nickel, Chrom, Cobalt, Mangan etc. erfolgreich zum Einsatz. Auf dem Substrat 1 der Figur 1 sind nun, von links nach rechts gehend, folgende Bauelemente realisiert: ein elektrischer Durchkontakt oder Vias a, im Anschluss daran und z.B. verbunden damit über die obere leitende Schicht 5 befindet sich ein Transistor b mit den Source/Drain Elektroden in der unteren leitenden Schicht 2. Neben dem Transistor b ist eine Diode c angeordnet, bei der die halbleitende Schicht 3 bis auf das Niveau der Gegenelektrode 5 hochgezogen ist, damit keine Strom/Spannungsverluste entstehen. Rechts von der Diode c ist ein Kondensator d zu erkennen und wiederum rechts davon, also ganz rechts außen, befindet sich ein Widerstand oder eine Spule e.As a conclusion of the essential parts of the electronic components, the structured insulating layer 4 is followed by an upper conductive layer 5, which in turn is preferably structured. In this case, conductive organic and inorganic materials and / or composite materials are used. Particular preference is given to using metals whose work function differs from that of the material of the lower conductive layer (counterelectrode). According to one embodiment, materials are used whose work function in the range of 3 to 5 eV, in particular from 3.0 eV to 4.6 eV or more, for example, is here copper, nickel, chromium, cobalt, manganese, etc. successfully used. The following components are now realized on the substrate 1 of FIG. 1, going from left to right: an electrical through contact or vias a, and subsequently, for example, connected thereto via the upper conductive layer 5 is a transistor b with the source / drain Electrodes in the lower conductive layer 2. In addition to the transistor b, a diode c is arranged, in which the semiconducting layer 3 is pulled up to the level of the counter electrode 5, so that no current / voltage losses occur. To the right of the diode c, a capacitor d can be seen, and to the right of it, that is, on the far right, there is a resistor or a coil e.
In Figur 2 sind noch einmal alle Bauelemente und alle Schichten, die auch in Figur 1 zu sehen sind, gezeigt, allerdings wird hier die halbleitende Schicht 3 an der Stelle der Diode c nicht bis auf das Niveau der oberen Elektrode 5 der anderen Bauelemente elektrischer Durchkontakt a, Transistor b, Kondensator d und Widerstand e gezogen, sondern die obere Elektrode 5 der Diode c ist hier tiefer, auf das Niveau der isolierenden Schicht 4, gelegt.FIG. 2 again shows all the components and all layers which can also be seen in FIG. 1, but here the semiconductive layer 3 at the location of the diode c does not become electrical through-contact up to the level of the upper electrode 5 of the other components a, transistor b, capacitor d and resistor e pulled, but the upper electrode 5 of the diode c is here deeper, to the level of the insulating layer 4, set.
In Figur 3 sind alle essentiellen Bauelemente, die zur Spannungsversorgung für einen Gleichrichter erforderlich sind, zusammen auf einem Substrat und, falls alle Schichten in allen Bauelementen gemeinsam sind, gleichzeitig herstellbar, realisiert. Die Schichtabfolge entspricht der aus Figur 1 , wobei auch die gleichen oder andere entsprechende Materialien eingesetzt werden können. So ist die Schicht 1 das Substrat, die Schicht 2, strukturiert eine leitfähige Schicht und 3 die Halbleiterschicht, 4 die isolierende Schicht und 5 die Gegenelektrode, die wiederum strukturiert ist.In FIG. 3, all the essential components required for the voltage supply for a rectifier are implemented together on a substrate and, if all the layers in all components are common, can be produced simultaneously. The layer sequence corresponds to that of Figure 1, wherein the same or other corresponding materials can be used. Thus, layer 1 is the substrate, layer 2, a conductive layer and 3 the semiconductor layer, 4 the insulating layer and 5 the counter-electrode, which in turn is structured.
Die Abfolge der Bauelemente ist dabei wie folgt vorgesehen: Ganz links außen ist der Durchkontakt 1 , daneben die Diode c und im Anschluss an die Diode c der Kondensator d. Durch den hier gezeigten Verbundkörper kann beispielsweise die von einer Antenne stammende Wechselspannung gleichgerichtet werden. Der Halbleiter ist im Diodenbereich c etwas dicker aufgetragen, das kann beispielsweise über einen bei einer gleichzeitigen Herstellung der Bauelemente durch einen Dekordruck erreicht werden.The sequence of components is provided as follows: far left outside is the through-hole 1, next to the diode c and subsequent to the diode c, the capacitor d. By way of example, the composite body shown here can rectify the alternating voltage originating from an antenna. The semiconductor is slightly thicker in the diode region c applied, which can be achieved for example via a at a simultaneous production of the components by a decor pressure.
Figur 4 zeigt einen mehrschichtigen Verbundkörper, der einen elektrischen Durchkontakt, einen Transistor und einen Widerstand oder eine Spule vereint. Mit diesem Schichtaufbau und dieser Anordnung der Bauelemente elektrischer Durchkontakt a, Transistor b, und Widerstand oder Spule e können zumindest PFETs (Polymer-Field-Effect-Transistor), Inverter, Ringoszillatoren, Flip-Flops, Frequenzteiler und/oder Zähler aufgebaut werden.FIG. 4 shows a multilayer composite body which combines an electrical contact, a transistor and a resistor or a coil. With this layer structure and this arrangement of the components electrical contact a, transistor b, and resistor or coil e at least PFETs (polymer field effect transistor), inverters, ring oscillators, flip-flops, frequency dividers and / or counters can be constructed.
Der Schichtaufbau entspricht wieder dem aus den anderen Figuren bekannten. Obwohl hier keine Diode realisiert ist, kann das leitfähige Material der oberen Elektrode 5 und der unteren Elektrode 2 durchaus verschieden, insbesondere hinsichtlich seiner Austrittsarbeit, sein.The layer structure again corresponds to that known from the other figures. Although no diode is realized here, the conductive material of the upper electrode 5 and the lower electrode 2 may be quite different, especially in terms of its work function.
Als oberste Schicht oder Abschluss empfiehlt sich wegen der Empfindlichkeit des Device und/oder der Materialien immer noch eine Verkapselung und/oder Versiegelung der Bauelemente, die die verschiedensten Materialien und/oder Laminate umfassen kann. Die Verkapselung/Versiegelung kann aus einem starren oder flexiblen Material sein.Because of the sensitivity of the device and / or the materials, the encapsulation and / or sealing of the components, which may comprise a wide variety of materials and / or laminates, is still recommended as topmost layer or finish. The encapsulation / seal may be made of a rigid or flexible material.
Über diesen Aufbau können nebeneinander und/oder hintereinander auf einem Substrat durch durchgehend flächig aufgetragene und/oder strukturierte Schichten die essentiellen Bestandteile elektronischer Geräte hergestellt werden, wie Transistor, Feld-Effekt-Transistor, elektrischer Durchkontakt, Widerstand, Leiterbahnwiderstand, Induktivität, Diode, Kondensator und Gleichrichter realisiert sind.About this structure, the essential components of electronic devices can be produced side by side and / or in succession on a substrate by continuously applied and / or structured layers, such as transistor, field effect transistor, electrical contact, resistance, track resistance, inductance, diode, capacitor and rectifiers are realized.
Durch die kostengünstige und massenfertigungstaugliche Herstellung bevorzugt sämtlicher Bauelemente der Baugruppe gleichzeitig und in einem kontinuierlichen Verfahren können in einzelnen Bauelementen Schichten enthalten sein, die dort speziell keine Funktion haben, beispielsweise kann in einem Feld-Effekt Transistor und/oder in einem Kondensator die Gate Elektrode eine von der Source/Drain-Elektrode unterschiedlichen Austrittsarbeit haben, wobei der Unterschied der Austrittsarbeit hier keine Funktionalität hat.Due to the cost-effective and mass production suitable production of all components of the assembly at the same time and in a continuous process can be contained in individual components layers that have no special function there, for example, in a field effect transistor and / or in a capacitor, the gate electrode have a work function different from the source / drain electrode, wherein the difference of the work function here has no functionality.
In dem Kondensator und den Leiterbahnwiderständen, ebenfalls imIn the capacitor and the conductor resistances, also in the
Durchkontakt ist beispielsweise ein Halbleiter vorhanden, der an der Stelle überflüssig und nicht funktional ist.Through contact, for example, a semiconductor is present, which is unnecessary at the site and not functional.
Über den in den Figuren gezeigten Aufbau können nebeneinander und/oder hintereinander auf einem Substrat durch durchgehend flächig aufgetragene und/oder strukturierte Schichten die essentiellen Bestandteile komplexer elektronischer Geräte hergestellt werden, wie Feld-Effekt-Transistor, elektrischer Durchkontakt, Widerstand, Leiterbahnwiderstand, Spule, Diode, Kondensator und Gleichrichter.About the structure shown in the figures, the essential components of complex electronic devices can be produced side by side and / or one after another on a substrate by continuously applied and / or structured layers, such as field effect transistor, electrical contact, resistance, conductor resistance, coil, Diode, capacitor and rectifier.
Die Erfindung eröffnet erstmals eine Möglichkeit für einen Aufbau einer gesamten Baugruppe wie ein RFID-Tag, wobei der gesamte Tag mit allen Bauelementen in einem Herstellungsprozess realisierbar ist. Dadurch wird erstmals eine kostengünstige und massenfertigungstaugliche Herstellungsmethode beschrieben. The invention opens up for the first time a possibility for a structure of an entire assembly such as an RFID tag, wherein the entire day can be realized with all components in a manufacturing process. As a result, a cost-effective and mass production suitable manufacturing method is described for the first time.

Claims

Patentansprüche claims
1. Mehrschichtiger Verbundkörper, zumindest zwei unterschiedliche elektronische organische Bauelemente umfassend, denen zumindest zwei, jeweils in einem Arbeitsgang aufgebrachte Schichten, die homogen oder strukturiert sein können, gemeinsam sind.1. Multilayer composite body, comprising at least two different electronic organic components, which are common to at least two, each applied in one operation layers, which may be homogeneous or structured.
2. Mehrschichtiger Verbundkörper nach Anspruch 1 , bei dem die zumindest zwei gemeinsamen Schichten zwei Elektrodenschichten aus zwei - hinsichtlich ihrer Austrittsarbeit - verschiedenen Materialien umfassen.2. A multilayer composite according to claim 1, wherein the at least two common layers comprise two electrode layers of two - with respect to their work function - different materials.
3. Mehrschichtiger Verbundkörper nach Anspruch 2, wobei die edlere Elektrodenschicht im Wesentlichen aus Silber ist.The multilayer composite according to claim 2, wherein the nobler electrode layer is substantially silver.
4. Mehrschichtiger Verbundkörper nach Anspruch 2 oder Anspruch 3, wobei die unedlere Elektrodenschicht im Wesentlichen aus Kupfer ist.The multilayer composite according to claim 2 or claim 3, wherein the less noble electrode layer is substantially copper.
5. Mehrschichtiger Verbundkörper nach einem der Ansprüche 2 bis 4, bei dem die zwei Elektrodenschichten eine Elektrode und eine Gegenelektrode bilden.5. A multilayer composite according to any one of claims 2 to 4, wherein the two electrode layers form an electrode and a counter electrode.
6. Mehrschichtiger Verbundkörper nach einem der vorstehenden Ansprüche, bei dem zumindest eine der zumindest zwei gemeinsamen Schichten in zumindest einem der zumindest zwei unterschiedlichen elektronischen organischen Bauelemente in dem Bauelement selbst keine Funktionalität besitzt. 6. The multilayer composite according to claim 1, wherein at least one of the at least two common layers in at least one of the at least two different electronic organic devices has no functionality in the device itself.
7. Mehrschichtiger Verbundkörper nach Anspruch 6, bei dem eine durchgehende, den unterschiedlichen Bauelementen gemeinsame Schicht enthalten ist, die in einigen Bauelementen essentiell ist und in anderen keine Funktionalität hat.7. A composite composite body according to claim 6, wherein a continuous, common to the different components layer is included, which is essential in some components and has no functionality in others.
8. Mehrschichtiger Verbundkörper nach einem der vorstehenden Ansprüche, wobei eines der zumindest zwei unterschiedlichen Bauelemente eine Diode ist.8. Multilayer composite body according to one of the preceding claims, wherein one of the at least two different components is a diode.
9. Mehrschichtiger Verbundkörper nach einem der vorstehenden Ansprüche und insbesondere nach Anspruch 8, wobei eines der zumindest zwei unterschiedlichen Bauelemente ein Kondensator ist.9. Multilayer composite body according to one of the preceding claims and in particular according to claim 8, wherein one of the at least two different components is a capacitor.
10. Mehrschichtiger Verbundkörper nach einem der Ansprüche 8 oder 9, in dem zumindest zwei Dioden und ein Kondensator realisiert sind.10. Multilayer composite body according to one of claims 8 or 9, in which at least two diodes and a capacitor are realized.
11. Mehrschichtiger Verbundkörper nach einem der vorstehenden Ansprüche, in dem zumindest drei unterschiedliche Bauelemente realisiert sind, eine Diode, ein Kondensator und ein Transistor.11. Multilayer composite body according to one of the preceding claims, in which at least three different components are realized, a diode, a capacitor and a transistor.
12. Mehrschichtiger Verbundkörper nach einem der vorstehenden Ansprüche, in dem zumindest vier unterschiedliche Bauelemente wie eine Diode, ein Kondensator, ein Transistor und ein Durchkontakt realisiert sind.12. Multilayer composite body according to one of the preceding claims, in which at least four different components such as a diode, a capacitor, a transistor and a contact are realized.
13. Mehrschichtiger Verbundkörper nach einem der vorstehenden Ansprüche, in dem zumindest eines der elektronischen Bauelemente, ausgewählt aus der Gruppe folgende Bauelemente umfassend: Transistor, Feld-Effekt-Transistor, elektrischer Durchkontakt, Widerstand, Leiterbahnwiderstand, Spule, Kondensator und/oder Gleichrichter zusammen mit einer Diode realisiert sind.13. The multilayer composite according to claim 1, wherein at least one of the electronic components selected from the group comprises the following components: transistor, field-effect transistor, electrical contact, resistor, conductor resistance, coil, capacitor and / or rectifier together with a diode are realized.
14. Mehrschichtiger Verbundkörper nach einem der vorstehenden Ansprüche, wobei zumindest eine der, zumindest zwei Bauelementen gemeinsamen, Schichten in einem kontinuierlichen Herstellungsverfahren herstellbar ist. 14. Multilayer composite body according to one of the preceding claims, wherein at least one of the, at least two components common, layers can be produced in a continuous production process.
15. Mehrschichtiger Verbundkörper nach einem der vorstehenden Ansprüche, bei dem zumindest eine der, zumindest zwei Bauelementen gemeinsamen, Schichten drucktechnisch herstellbar ist.15. Multilayer composite body according to one of the preceding claims, wherein at least one of the, at least two components common, layers can be produced by printing technology.
16. Mehrschichtiger Verbundkörper, bei dem auf einem Substrat mehrere Bauelemente realisiert sind, wobei zumindest ein Bauelement enthalten ist, das zumindest eine Schicht hat, die in dem Bauelement selbst keine Funktionalität besitzt.16. A multilayer composite body in which a plurality of components are realized on a substrate, wherein at least one component is included, which has at least one layer which has no functionality in the component itself.
17. Mehrschichtiger Verbundkörper nach Anspruch 16, bei dem eine durchgehende, den unterschiedlichen Bauelementen gemeinsame Schicht enthalten ist, die in einigen Bauelementen essentiell ist und in anderen keine Funktionalität hat.The multilayer composite according to claim 16, wherein a continuous layer common to the different components is included, which is essential in some components and has no functionality in others.
18. Mehrschichtiger Verbundkörper nach einem der Ansprüche 16 oder 17, wobei eine Halbleiterschicht mehreren Bauelementen gemeinsam ist und dabei auch in einem Kondensator enthalten ist, in dem sie keine Funktionalität hat. 18. A multilayer composite body according to any one of claims 16 or 17, wherein a semiconductor layer is common to a plurality of components and is also contained in a capacitor in which it has no functionality.
EP06723879A 2005-04-15 2006-03-31 Multi-layer composite body having an electronic function Withdrawn EP1869625A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005017655A DE102005017655B4 (en) 2005-04-15 2005-04-15 Multilayer composite body with electronic function
PCT/EP2006/002916 WO2006108514A2 (en) 2005-04-15 2006-03-31 Multi-layer composite body having an electronic function

Publications (1)

Publication Number Publication Date
EP1869625A2 true EP1869625A2 (en) 2007-12-26

Family

ID=37084894

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06723879A Withdrawn EP1869625A2 (en) 2005-04-15 2006-03-31 Multi-layer composite body having an electronic function

Country Status (8)

Country Link
US (1) US7812343B2 (en)
EP (1) EP1869625A2 (en)
JP (1) JP4977126B2 (en)
KR (1) KR101244124B1 (en)
CN (1) CN101160594B (en)
DE (1) DE102005017655B4 (en)
TW (1) TWI314369B (en)
WO (1) WO2006108514A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005031448A1 (en) 2005-07-04 2007-01-11 Polyic Gmbh & Co. Kg Activatable optical layer
CN101467162B (en) * 2006-06-07 2011-11-23 Nxp股份有限公司 Semiconductor chip, transponder and method of manufacturing a transponder
DE102007046679B4 (en) 2007-09-27 2012-10-31 Polyic Gmbh & Co. Kg RFID transponder
DE102008036736B4 (en) * 2008-08-07 2010-04-29 Abb Ag Electrical service switching device with an electronic module
DE102008061928A1 (en) * 2008-12-15 2010-06-17 Polylc Gmbh & Co. Kg Organic electronic circuit
DE102013102052B4 (en) 2013-03-01 2018-07-26 Infineon Technologies Ag Chip arrangement

Family Cites Families (253)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US65757A (en) * 1867-06-11 Improved lifter foe the lids of pitchers
GB723598A (en) 1951-09-07 1955-02-09 Philips Nv Improvements in or relating to methods of producing electrically conductive mouldings from plastics
US3512052A (en) * 1968-01-11 1970-05-12 Gen Motors Corp Metal-insulator-semiconductor voltage variable capacitor with controlled resistivity dielectric
DE2102735B2 (en) 1971-01-21 1979-05-10 Transformatoren Union Ag, 7000 Stuttgart Mill, eg for grinding plastics fillers - with electric circuit for controlling the throughput of the mill
US3769096A (en) 1971-03-12 1973-10-30 Bell Telephone Labor Inc Pyroelectric devices
AU488652B2 (en) 1973-09-26 1976-04-01 Commonwealth Scientific And Industrial Research Organisation Improvements in or relating to security tokens
JPS543594B2 (en) * 1973-10-12 1979-02-24
DE2407110C3 (en) 1974-02-14 1981-04-23 Siemens AG, 1000 Berlin und 8000 München Sensor for the detection of a substance contained in a gas or a liquid
JPS54101176A (en) 1978-01-26 1979-08-09 Shinetsu Polymer Co Contact member for push switch
US4442019A (en) * 1978-05-26 1984-04-10 Marks Alvin M Electroordered dipole suspension
US4246298A (en) * 1979-03-14 1981-01-20 American Can Company Rapid curing of epoxy resin coating compositions by combination of photoinitiation and controlled heat application
JPS5641938U (en) 1979-09-10 1981-04-17
US4340057A (en) * 1980-12-24 1982-07-20 S. C. Johnson & Son, Inc. Radiation induced graft polymerization
US4472627A (en) 1982-09-30 1984-09-18 The United States Of America As Represented By The Secretary Of The Treasury Authenticating and anti-counterfeiting device for currency
JPS59145576A (en) 1982-11-09 1984-08-21 ザイトレツクス・コ−ポレ−シヨン Programmable mos transistor
DE3321071A1 (en) 1983-06-10 1984-12-13 Basf Ag PRESSURE SWITCH
DE3338597A1 (en) 1983-10-24 1985-05-02 GAO Gesellschaft für Automation und Organisation mbH, 8000 München DATA CARRIER WITH INTEGRATED CIRCUIT AND METHOD FOR PRODUCING THE SAME
US4554229A (en) 1984-04-06 1985-11-19 At&T Technologies, Inc. Multilayer hybrid integrated circuit
JPS6265472A (en) 1985-09-18 1987-03-24 Toshiba Corp Mis type semiconductor element
US4726659A (en) 1986-02-24 1988-02-23 Rca Corporation Display device having different alignment layers
US4926052A (en) * 1986-03-03 1990-05-15 Kabushiki Kaisha Toshiba Radiation detecting device
DE3751376T2 (en) 1986-10-13 1995-11-16 Canon Kk Circuit element.
GB2215307B (en) 1988-03-04 1991-10-09 Unisys Corp Electronic component transportation container
DE68912426T2 (en) 1988-06-21 1994-05-11 Gec Avery Ltd Manufacture of portable electronic cards.
US5364735A (en) 1988-07-01 1994-11-15 Sony Corporation Multiple layer optical record medium with protective layers and method for producing same
US4937119A (en) * 1988-12-15 1990-06-26 Hoechst Celanese Corp. Textured organic optical data storage media and methods of preparation
US5892244A (en) * 1989-01-10 1999-04-06 Mitsubishi Denki Kabushiki Kaisha Field effect transistor including πconjugate polymer and liquid crystal display including the field effect transistor
FR2644920B1 (en) 1989-03-21 1993-09-24 France Etat POLYCHROMIC DISPLAY DEVICE WITH PHOTOCONDUCTOR-LIGHT EMITTING TYPE
US6331356B1 (en) * 1989-05-26 2001-12-18 International Business Machines Corporation Patterns of electrically conducting polymers and their application as electrodes or electrical contacts
EP0418504B1 (en) 1989-07-25 1995-04-05 Matsushita Electric Industrial Co., Ltd. Organic semiconductor memory device having a MISFET structure and its control method
FI84862C (en) 1989-08-11 1992-01-27 Vaisala Oy Capacitive humidifier construction and method of making it
DE3942663A1 (en) 1989-12-22 1991-06-27 Gao Ges Automation Org DATA CARRIER WITH A LIQUID CRYSTAL SECURITY ELEMENT
US5206525A (en) * 1989-12-27 1993-04-27 Nippon Petrochemicals Co., Ltd. Electric element capable of controlling the electric conductivity of π-conjugated macromolecular materials
FI91573C (en) 1990-01-04 1994-07-11 Neste Oy Method for manufacturing electronic and electro-optical components and circuits
JP2969184B2 (en) 1990-04-09 1999-11-02 カシオ計算機株式会社 Thin film transistor memory
FR2664430B1 (en) 1990-07-04 1992-09-18 Centre Nat Rech Scient THIN FILM FIELD EFFECT TRANSISTOR WITH MIS STRUCTURE, IN WHICH THE INSULATION AND THE SEMICONDUCTOR ARE MADE OF ORGANIC MATERIALS.
US5202677A (en) * 1991-01-31 1993-04-13 Crystal Images, Inc. Display apparatus using thermochromic material
DE4103675C2 (en) 1991-02-07 1993-10-21 Telefunken Microelectron Circuit for voltage surge of AC input signals
FR2673041A1 (en) 1991-02-19 1992-08-21 Gemplus Card Int METHOD FOR MANUFACTURING INTEGRATED CIRCUIT MICROMODULES AND CORRESPONDING MICROMODULE.
EP0501456A3 (en) 1991-02-26 1992-09-09 Sony Corporation Video game computer provided with an optical disc drive
US5408109A (en) * 1991-02-27 1995-04-18 The Regents Of The University Of California Visible light emitting diodes fabricated from soluble semiconducting polymers
EP0511807A1 (en) 1991-04-27 1992-11-04 Gec Avery Limited Apparatus and sensor unit for monitoring changes in a physical quantity with time
JP3224829B2 (en) 1991-08-15 2001-11-05 株式会社東芝 Organic field effect device
JPH0580530A (en) 1991-09-24 1993-04-02 Hitachi Ltd Production of thin film pattern
US5173835A (en) 1991-10-15 1992-12-22 Motorola, Inc. Voltage variable capacitor
DE59105477D1 (en) * 1991-10-30 1995-06-14 Fraunhofer Ges Forschung EXPOSURE DEVICE.
JP2709223B2 (en) * 1992-01-30 1998-02-04 三菱電機株式会社 Non-contact portable storage device
FR2696043B1 (en) 1992-09-18 1994-10-14 Commissariat Energie Atomique Support for a network of resistive elements made of conductive polymer and its manufacturing process.
EP0603939B1 (en) 1992-12-21 1999-06-16 Koninklijke Philips Electronics N.V. N-type conductive polymer and method of preparing such a polymer
DE4243832A1 (en) 1992-12-23 1994-06-30 Daimler Benz Ag Push button arrangement
JP3457348B2 (en) * 1993-01-15 2003-10-14 株式会社東芝 Method for manufacturing semiconductor device
FR2701117B1 (en) * 1993-02-04 1995-03-10 Asulab Sa Electrochemical measurement system with multizone sensor, and its application to glucose measurement.
EP0615256B1 (en) 1993-03-09 1998-09-23 Koninklijke Philips Electronics N.V. Method of manufacturing a pattern of an electrically conductive polymer on a substrate surface and method of metallizing such a pattern
US5567550A (en) 1993-03-25 1996-10-22 Texas Instruments Incorporated Method of making a mask for making integrated circuits
DE4312766C2 (en) 1993-04-20 1997-02-27 Telefunken Microelectron Circuit for voltage boost
JPH0722669A (en) * 1993-07-01 1995-01-24 Mitsubishi Electric Corp Plastic functional element
CA2170402C (en) 1993-08-24 2000-07-18 Michael P. Allen Novel disposable electronic assay device
JP3460863B2 (en) 1993-09-17 2003-10-27 三菱電機株式会社 Method for manufacturing semiconductor device
FR2710413B1 (en) * 1993-09-21 1995-11-03 Asulab Sa Measuring device for removable sensors.
US5556706A (en) * 1993-10-06 1996-09-17 Matsushita Electric Industrial Co., Ltd. Conductive layered product and method of manufacturing the same
IL111151A (en) 1994-10-03 1998-09-24 News Datacom Ltd Secure access systems
US6028649A (en) * 1994-04-21 2000-02-22 Reveo, Inc. Image display systems having direct and projection viewing modes
DE69531477T2 (en) * 1994-05-16 2004-07-15 Koninklijke Philips Electronics N.V. SEMICONDUCTOR ARRANGEMENT MADE OF SEMICONDUCTIVE ORGANIC MATERIAL
IL110318A (en) 1994-05-23 1998-12-27 Al Coat Ltd Polyaniline-containing solutions for preparing transparent electrodes for liquid crystal devices
US5684884A (en) 1994-05-31 1997-11-04 Hitachi Metals, Ltd. Piezoelectric loudspeaker and a method for manufacturing the same
JP3246189B2 (en) * 1994-06-28 2002-01-15 株式会社日立製作所 Semiconductor display device
US5528222A (en) * 1994-09-09 1996-06-18 International Business Machines Corporation Radio frequency circuit and memory in thin flexible package
US5574291A (en) 1994-12-09 1996-11-12 Lucent Technologies Inc. Article comprising a thin film transistor with low conductivity organic layer
US5630986A (en) * 1995-01-13 1997-05-20 Bayer Corporation Dispensing instrument for fluid monitoring sensors
DE19506907A1 (en) 1995-02-28 1996-09-05 Telefunken Microelectron Voltage or current level input signal changing circuit for e.g. EEPROM
JP3068430B2 (en) * 1995-04-25 2000-07-24 富山日本電気株式会社 Solid electrolytic capacitor and method of manufacturing the same
JPH08328031A (en) * 1995-06-02 1996-12-13 Sharp Corp Full-color liquid crystal display device and its production
JPH0933645A (en) 1995-07-21 1997-02-07 Oki Electric Ind Co Ltd Power supply circuit of transponder
US5652645A (en) * 1995-07-24 1997-07-29 Anvik Corporation High-throughput, high-resolution, projection patterning system for large, flexible, roll-fed, electronic-module substrates
US5707894A (en) * 1995-10-27 1998-01-13 United Microelectronics Corporation Bonding pad structure and method thereof
US5625199A (en) * 1996-01-16 1997-04-29 Lucent Technologies Inc. Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors
EP0785457A3 (en) * 1996-01-17 1998-10-14 Nippon Telegraph And Telephone Corporation Optical device and three-dimensional display device
US6326640B1 (en) 1996-01-29 2001-12-04 Motorola, Inc. Organic thin film transistor with enhanced carrier mobility
GB2310493B (en) * 1996-02-26 2000-08-02 Unilever Plc Determination of the characteristics of fluid
JP3080579B2 (en) 1996-03-06 2000-08-28 富士機工電子株式会社 Manufacturing method of air rear grid array package
DE19610284A1 (en) 1996-03-15 1997-08-07 Siemens Ag Transponder antenna coil design
JP2000512428A (en) * 1996-06-12 2000-09-19 ザ トラスティーズ オブ プリンストン ユニバーシテイ Thin film patterning for organic multicolor display manufacturing
DE19629656A1 (en) * 1996-07-23 1998-01-29 Boehringer Mannheim Gmbh Diagnostic test carrier with multilayer test field and method for the determination of analyte with its aid
US5693956A (en) 1996-07-29 1997-12-02 Motorola Inverted oleds on hard plastic substrate
DE19648937A1 (en) 1996-11-26 1997-05-15 Meonic Sys Eng Gmbh Product recognition electronic label
US6259506B1 (en) * 1997-02-18 2001-07-10 Spectra Science Corporation Field activated security articles including polymer dispersed liquid crystals, and including micro-encapsulated field affected materials
US5946551A (en) * 1997-03-25 1999-08-31 Dimitrakopoulos; Christos Dimitrios Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric
US6344662B1 (en) * 1997-03-25 2002-02-05 International Business Machines Corporation Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages
US5841325A (en) 1997-05-12 1998-11-24 Hewlett-Packard Company Fully-integrated high-speed interleaved voltage-controlled ring oscillator
KR100248392B1 (en) 1997-05-15 2000-09-01 정선종 The operation and control of the organic electroluminescent devices with organic field effect transistors
WO1999010939A2 (en) * 1997-08-22 1999-03-04 Koninklijke Philips Electronics N.V. A method of manufacturing a field-effect transistor substantially consisting of organic materials
BR9811636A (en) 1997-09-11 2000-08-08 Precision Dynamics Corp Radio frequency identification label on flexible substrate
EP1296280A1 (en) * 1997-09-11 2003-03-26 Precision Dynamics Corporation Rf-id tag with integrated circuit consisting of organic materials
US6251513B1 (en) * 1997-11-08 2001-06-26 Littlefuse, Inc. Polymer composites for overvoltage protection
JPH11142810A (en) 1997-11-12 1999-05-28 Nintendo Co Ltd Portable information processor
US5997817A (en) 1997-12-05 1999-12-07 Roche Diagnostics Corporation Electrochemical biosensor test strip
JP2001510670A (en) 1997-12-05 2001-07-31 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Identification transponder
US5998805A (en) 1997-12-11 1999-12-07 Motorola, Inc. Active matrix OED array with improved OED cathode
US6083104A (en) * 1998-01-16 2000-07-04 Silverlit Toys (U.S.A.), Inc. Programmable toy with an independent game cartridge
EP1051741A1 (en) * 1998-01-28 2000-11-15 Opticom ASA A method for generation of electrical conducting or semiconducting structures in three dimensions and methods for erasure of the same structures
US6087196A (en) * 1998-01-30 2000-07-11 The Trustees Of Princeton University Fabrication of organic semiconductor devices using ink jet printing
US6045977A (en) * 1998-02-19 2000-04-04 Lucent Technologies Inc. Process for patterning conductive polyaniline films
DE19816860A1 (en) 1998-03-06 1999-11-18 Deutsche Telekom Ag Chip card, especially credit card
US6033202A (en) 1998-03-27 2000-03-07 Lucent Technologies Inc. Mold for non - photolithographic fabrication of microstructures
US6369793B1 (en) * 1998-03-30 2002-04-09 David C. Zimman Printed display and battery
CA2323879C (en) * 1998-04-10 2007-01-16 E Ink Corporation Electronic displays using organic-based field effect transistors
GB9808061D0 (en) * 1998-04-16 1998-06-17 Cambridge Display Tech Ltd Polymer devices
JP3466954B2 (en) * 1998-04-24 2003-11-17 キヤノン株式会社 Light emitting diode device and method of manufacturing the same
US6350996B1 (en) 1998-04-24 2002-02-26 Canon Kabushiki Kaisha Light emitting diode device
GB9808806D0 (en) 1998-04-24 1998-06-24 Cambridge Display Tech Ltd Selective deposition of polymer films
TW410478B (en) 1998-05-29 2000-11-01 Lucent Technologies Inc Thin-film transistor monolithically integrated with an organic light-emitting diode
US6107920A (en) * 1998-06-09 2000-08-22 Motorola, Inc. Radio frequency identification tag having an article integrated antenna
US5967048A (en) 1998-06-12 1999-10-19 Howard A. Fromson Method and apparatus for the multiple imaging of a continuous web
KR100282393B1 (en) 1998-06-17 2001-02-15 구자홍 method for fabricating Organic Electroluminescent display Device
JP3597468B2 (en) * 1998-06-19 2004-12-08 シン フイルム エレクトロニクス エイエスエイ Integrated inorganic / organic complementary type thin film transistor circuit and method of manufacturing the same
DE19836174C2 (en) 1998-08-10 2000-10-12 Illig Maschinenbau Adolf Heater for heating thermoplastic sheets and method for adjusting the temperature of this heater
US6215130B1 (en) * 1998-08-20 2001-04-10 Lucent Technologies Inc. Thin film transistors
ES2306525T3 (en) 1998-08-26 2008-11-01 Sensors For Medicine And Science, Inc. OPTICAL-BASED DETECTION DEVICES.
JP4493741B2 (en) 1998-09-04 2010-06-30 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
DE69831243T2 (en) 1998-10-13 2006-08-10 Sony Deutschland Gmbh A manufacturing method of an active matrix light-emitting display device
DE19851703A1 (en) 1998-10-30 2000-05-04 Inst Halbleiterphysik Gmbh Electronic structure, e.g. FET, is produced by plotting, spraying, spin coating or spreading of insulating, semiconducting and-or conductive layers onto a substrate
US6384804B1 (en) * 1998-11-25 2002-05-07 Lucent Techonologies Inc. Display comprising organic smart pixels
US6506438B2 (en) * 1998-12-15 2003-01-14 E Ink Corporation Method for printing of transistor arrays on plastic substrates
US6321571B1 (en) 1998-12-21 2001-11-27 Corning Incorporated Method of making glass structures for flat panel displays
US6114088A (en) * 1999-01-15 2000-09-05 3M Innovative Properties Company Thermal transfer element for forming multilayer devices
EP1144197B1 (en) 1999-01-15 2003-06-11 3M Innovative Properties Company Thermal Transfer Method.
DE19902029A1 (en) 1999-01-20 2000-07-27 Philips Corp Intellectual Pty Withstand voltage thin film capacitor with interdigital structure
GB2347013A (en) * 1999-02-16 2000-08-23 Sharp Kk Charge-transport structures
WO2000050658A1 (en) * 1999-02-22 2000-08-31 Nippon Steel Corporation High strength galvanized steel plate excellent in adhesion of plated metal and formability in press working and high strength alloy galvanized steel plate and method for production thereof
US6300141B1 (en) 1999-03-02 2001-10-09 Helix Biopharma Corporation Card-based biosensor device
US6180956B1 (en) * 1999-03-03 2001-01-30 International Business Machine Corp. Thin film transistors with organic-inorganic hybrid materials as semiconducting channels
US6207472B1 (en) * 1999-03-09 2001-03-27 International Business Machines Corporation Low temperature thin film transistor fabrication
JP4486261B2 (en) 1999-03-29 2010-06-23 セイコーエプソン株式会社 Composition, method for producing film, functional element and method for producing the same
WO2000059040A1 (en) 1999-03-30 2000-10-05 Seiko Epson Corporation Method of manufacturing thin-film transistor
US6498114B1 (en) 1999-04-09 2002-12-24 E Ink Corporation Method for forming a patterned semiconductor film
US6072716A (en) * 1999-04-14 2000-06-06 Massachusetts Institute Of Technology Memory structures and methods of making same
US6387736B1 (en) * 1999-04-26 2002-05-14 Agilent Technologies, Inc. Method and structure for bonding layers in a semiconductor device
FR2793089B3 (en) 1999-04-28 2001-06-08 Rene Liger TRANSPONDER WITH INTEGRATED ANTENNA
DE19919448A1 (en) 1999-04-29 2000-11-02 Miele & Cie Cooling device and method for indicating germs
US6736985B1 (en) * 1999-05-05 2004-05-18 Agere Systems Inc. High-resolution method for patterning a substrate with micro-printing
DE19921024C2 (en) 1999-05-06 2001-03-08 Wolfgang Eichelmann Video game system
US6383664B2 (en) * 1999-05-11 2002-05-07 The Dow Chemical Company Electroluminescent or photocell device having protective packaging
JP4136185B2 (en) 1999-05-12 2008-08-20 パイオニア株式会社 Organic electroluminescent multicolor display and method for manufacturing the same
EP1052594A1 (en) 1999-05-14 2000-11-15 Sokymat S.A. Transponder and molding die, and their method of manufacture
BR9917304A (en) 1999-05-17 2002-02-19 Goodyear Tire & Rubber programmable modulation index for transponder
TW556357B (en) 1999-06-28 2003-10-01 Semiconductor Energy Lab Method of manufacturing an electro-optical device
ATE344535T1 (en) 1999-07-06 2006-11-15 Elmos Semiconductor Ag CMOS COMPATIBLE SOI PROCESS
US6366017B1 (en) * 1999-07-14 2002-04-02 Agilent Technologies, Inc/ Organic light emitting diodes with distributed bragg reflector
JP2001085272A (en) 1999-07-14 2001-03-30 Matsushita Electric Ind Co Ltd Variable capacitor
DE19933757A1 (en) 1999-07-19 2001-01-25 Giesecke & Devrient Gmbh Manufacturing chip card with integral battery involves applying first conducting track structure, electrolyte and second conducting track structure to form opposite polarity electrodes
WO2001008242A1 (en) * 1999-07-21 2001-02-01 E Ink Corporation Preferred methods for producing electrical circuit elements used to control an electronic display
DE19935527A1 (en) 1999-07-28 2001-02-08 Giesecke & Devrient Gmbh Active film for chip cards with display
DE19937262A1 (en) 1999-08-06 2001-03-01 Siemens Ag Arrangement with transistor function
US6593690B1 (en) * 1999-09-03 2003-07-15 3M Innovative Properties Company Large area organic electronic devices having conducting polymer buffer layers and methods of making same
JP4595143B2 (en) * 1999-09-06 2010-12-08 双葉電子工業株式会社 Organic EL device and manufacturing method thereof
EP1085320A1 (en) * 1999-09-13 2001-03-21 Interuniversitair Micro-Elektronica Centrum Vzw A device for detecting an analyte in a sample based on organic materials
US6517995B1 (en) * 1999-09-14 2003-02-11 Massachusetts Institute Of Technology Fabrication of finely featured devices by liquid embossing
WO2001023131A1 (en) 1999-09-28 2001-04-05 Sumitomo Heavy Industries, Ltd. Laser drilling method and laser drilling device
US6340822B1 (en) * 1999-10-05 2002-01-22 Agere Systems Guardian Corp. Article comprising vertically nano-interconnected circuit devices and method for making the same
EP1149420B1 (en) * 1999-10-11 2015-03-04 Creator Technology B.V. Integrated circuit
US6335539B1 (en) * 1999-11-05 2002-01-01 International Business Machines Corporation Method for improving performance of organic semiconductors in bottom electrode structure
US6284562B1 (en) 1999-11-17 2001-09-04 Agere Systems Guardian Corp. Thin film transistors
JP2001147659A (en) 1999-11-18 2001-05-29 Sony Corp Display device
EP1103916A1 (en) 1999-11-24 2001-05-30 Infineon Technologies AG IC-card
US6136702A (en) 1999-11-29 2000-10-24 Lucent Technologies Inc. Thin film transistors
US6621098B1 (en) 1999-11-29 2003-09-16 The Penn State Research Foundation Thin-film transistor and methods of manufacturing and incorporating a semiconducting organic material
US6197663B1 (en) * 1999-12-07 2001-03-06 Lucent Technologies Inc. Process for fabricating integrated circuit devices having thin film transistors
CA2394886C (en) * 1999-12-21 2012-07-17 Plastic Logic Limited Inkjet-fabricated integrated circuits
WO2001047043A1 (en) * 1999-12-21 2001-06-28 Plastic Logic Limited Solution processed devices
CN100379048C (en) 1999-12-21 2008-04-02 造型逻辑有限公司 Forming interconnects
US7002451B2 (en) 2000-01-11 2006-02-21 Freeman Jeffrey R Package location system
JP2002162652A (en) 2000-01-31 2002-06-07 Fujitsu Ltd Sheet-like display device, resin spherical body and microcapsule
US6706159B2 (en) 2000-03-02 2004-03-16 Diabetes Diagnostics Combined lancet and electrochemical analyte-testing apparatus
TW497120B (en) * 2000-03-06 2002-08-01 Toshiba Corp Transistor, semiconductor device and manufacturing method of semiconductor device
JP3614747B2 (en) 2000-03-07 2005-01-26 Ｎｅｃエレクトロニクス株式会社 BOOST CIRCUIT, IC CARD WITH THE SAME AND ELECTRONIC DEVICE WITH THE SAME
DE10012204A1 (en) 2000-03-13 2001-09-20 Siemens Ag Electronic postage stamp for identifying postal articles
EP1134694A1 (en) 2000-03-16 2001-09-19 Infineon Technologies AG Document with integrated electronic circuit
JP2001267578A (en) 2000-03-17 2001-09-28 Sony Corp Thin-film semiconductor device, and method for manufacturing the same
ES2252212T3 (en) 2000-03-28 2006-05-16 Diabetes Diagnostics, Inc. MANUFACTURING PROCEDURE IN CONTINUOUS DISPOSABLE ELECTROCHEMICAL SENSOR.
WO2001090809A1 (en) 2000-05-24 2001-11-29 Schott Donnelly Llc Electrochromic devices
US6535057B2 (en) 2000-05-29 2003-03-18 Stmicroelectronics Ltd. Programmable glitch filter
US6329226B1 (en) 2000-06-01 2001-12-11 Agere Systems Guardian Corp. Method for fabricating a thin-film transistor
JP2003535379A (en) * 2000-06-06 2003-11-25 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Liquid crystal display device and manufacturing method thereof
DE10032260B4 (en) 2000-07-03 2004-04-29 Texas Instruments Deutschland Gmbh Circuit arrangement for doubling the voltage of a battery
DE10033112C2 (en) 2000-07-07 2002-11-14 Siemens Ag Process for the production and structuring of organic field-effect transistors (OFET), OFET produced thereafter and its use
US6483473B1 (en) 2000-07-18 2002-11-19 Marconi Communications Inc. Wireless communication device and method
JP2004507096A (en) * 2000-08-18 2004-03-04 シーメンス　アクチエンゲゼルシヤフト Organic field effect transistor (OFET), method of manufacturing the organic field effect transistor, integrated circuit formed from the organic field effect transistor, and use of the integrated circuit
JP2004506985A (en) 2000-08-18 2004-03-04 シーメンス　アクチエンゲゼルシヤフト Encapsulated organic electronic component, method of manufacture and use thereof
DE10120687A1 (en) 2001-04-27 2002-10-31 Siemens Ag Encapsulated organic-electronic circuit has electronic components especially made of organic material and arranged between at least two layers forming barrier
JP2002068324A (en) 2000-08-30 2002-03-08 Nippon Sanso Corp Heat-insulating container
DE10043204A1 (en) 2000-09-01 2002-04-04 Siemens Ag Organic field-effect transistor, method for structuring an OFET and integrated circuit
US6699728B2 (en) * 2000-09-06 2004-03-02 Osram Opto Semiconductors Gmbh Patterning of electrodes in oled devices
DE10044842A1 (en) 2000-09-11 2002-04-04 Siemens Ag Organic rectifier, circuit, RFID tag and use of an organic rectifier
DE10045192A1 (en) 2000-09-13 2002-04-04 Siemens Ag Organic data storage, RFID tag with organic data storage, use of an organic data storage
DE10047171A1 (en) 2000-09-22 2002-04-18 Siemens Ag Electrode and/or conductor track used for components of OFETs and OLEDs is produced by treating an organic functional polymer with a chemical compound
KR20020036916A (en) * 2000-11-11 2002-05-17 주승기 Method of crystallizing a silicon thin film and semiconductor device fabricated thereby
DE10058559A1 (en) 2000-11-24 2002-05-29 Interactiva Biotechnologie Gmb System for distribution of refrigerated goods has communication network connecting supplier to local storage areas and hence to customers
US6414543B1 (en) * 2000-11-28 2002-07-02 Precision Dynamics Corporation Rectifying charge storage element
US6859093B1 (en) * 2000-11-28 2005-02-22 Precision Dynamics Corporation Rectifying charge storage device with bi-stable states
KR100390522B1 (en) * 2000-12-01 2003-07-07 피티플러스(주) Method for fabricating thin film transistor including a crystalline silicone active layer
DE10061297C2 (en) 2000-12-08 2003-05-28 Siemens Ag Procedure for structuring an OFET
DE10162037A1 (en) 2000-12-18 2002-09-12 Cubit Electronics Gmbh Retainer of active or passive electric components on flexible, insulating, miniaturized support foil
KR100388272B1 (en) * 2000-12-26 2003-06-19 삼성에스디아이 주식회사 A triodic rectifier switch device
GB2371910A (en) * 2001-01-31 2002-08-07 Seiko Epson Corp Display devices
DE10105914C1 (en) * 2001-02-09 2002-10-10 Siemens Ag Organic field effect transistor with photo-structured gate dielectric and a method for its production
EP1237207B1 (en) 2001-03-02 2012-01-04 FUJIFILM Corporation Method for producing organic thin film device
JP2002289355A (en) * 2001-03-26 2002-10-04 Pioneer Electronic Corp Organic semiconductor diode and organic electroluminescense element display
DE10117663B4 (en) 2001-04-09 2004-09-02 Samsung SDI Co., Ltd., Suwon Process for the production of matrix arrangements based on various types of organic conductive materials
CN100353580C (en) * 2001-04-17 2007-12-05 皇家菲利浦电子有限公司 LED comprising conductive transparent polymer layer with low sulfate and high metal lon content
DE10120686A1 (en) 2001-04-27 2002-11-07 Siemens Ag Process for producing thin homogeneous layers with the help of screen printing technology, device for carrying out the process and its use
US6781868B2 (en) 2001-05-07 2004-08-24 Advanced Micro Devices, Inc. Molecular memory device
US20020170897A1 (en) 2001-05-21 2002-11-21 Hall Frank L. Methods for preparing ball grid array substrates via use of a laser
US7244669B2 (en) 2001-05-23 2007-07-17 Plastic Logic Limited Patterning of devices
DE10126859A1 (en) 2001-06-01 2002-12-12 Siemens Ag Production of conducting structures used in organic FETs, illuminated diodes, organic diodes and integrated circuits comprises directly or indirectly forming conducting pathways
DE10126860C2 (en) 2001-06-01 2003-05-28 Siemens Ag Organic field effect transistor, process for its manufacture and use for the construction of integrated circuits
US6870180B2 (en) 2001-06-08 2005-03-22 Lucent Technologies Inc. Organic polarizable gate transistor apparatus and method
JP2003017248A (en) 2001-06-27 2003-01-17 Sony Corp Electroluminescent element
DE20111825U1 (en) 2001-07-20 2002-01-17 Lammering Thomas Print media
DE10141440A1 (en) 2001-08-23 2003-03-13 Daimler Chrysler Ag tripod
JP2003089259A (en) 2001-09-18 2003-03-25 Hitachi Ltd Pattern forming method and pattern forming apparatus
US7351660B2 (en) * 2001-09-28 2008-04-01 Hrl Laboratories, Llc Process for producing high performance interconnects
US6679036B2 (en) * 2001-10-15 2004-01-20 Shunchi Crankshaft Co., Ltd. Drive gear shaft structure of a self-moving type mower
DE10151440C1 (en) * 2001-10-18 2003-02-06 Siemens Ag Organic electronic component for implementing an encapsulated partially organic electronic component has components like a flexible foil as an antenna, a diode or capacitor and an organic transistor.
DE10153656A1 (en) 2001-10-31 2003-05-22 Infineon Technologies Ag Process for reducing the contact resistance in organic field effect transistors by applying a reactive intermediate layer that doses the organic semiconductor layer in the contact region in a regio-selective manner
DE10160732A1 (en) * 2001-12-11 2003-06-26 Siemens Ag OFET used e.g. in RFID tag, comprises an intermediate layer on an active semiconductor layer
DE10163267A1 (en) 2001-12-21 2003-07-03 Giesecke & Devrient Gmbh Banknotes incorporating an electronic, data containing, circuit and transceiver and a device for processing said notes ensure that banknote handling is greatly simplified
US6819181B2 (en) * 2001-12-21 2004-11-16 Motorola, Inc. Method and structure for integrated circuit interference isolation enhancement
DE10209400A1 (en) 2002-03-04 2003-10-02 Infineon Technologies Ag Transponder circuit for a transponder has a rectifier circuit with a component that has a coating of organic material
US6596569B1 (en) * 2002-03-15 2003-07-22 Lucent Technologies Inc. Thin film transistors
US7204425B2 (en) * 2002-03-18 2007-04-17 Precision Dynamics Corporation Enhanced identification appliance
DE10212640B4 (en) * 2002-03-21 2004-02-05 Siemens Ag Logical components made of organic field effect transistors
DE10219905B4 (en) 2002-05-03 2011-06-22 OSRAM Opto Semiconductors GmbH, 93055 Optoelectronic component with organic functional layers and two carriers and method for producing such an optoelectronic component
US6812509B2 (en) * 2002-06-28 2004-11-02 Palo Alto Research Center Inc. Organic ferroelectric memory cells
DE10229168A1 (en) 2002-06-28 2004-01-29 Infineon Technologies Ag Laminate with an electrically conductive layer designed as an antenna structure
EP1383179A2 (en) * 2002-07-17 2004-01-21 Pioneer Corporation Organic semiconductor device
AT502890B1 (en) 2002-10-15 2011-04-15 Atomic Austria Gmbh ELECTRONIC MONITORING SYSTEM FOR CHECKING BZW. RECORDING OF A SPORTS COMBINATION COMPOSED OF MULTIPLE SPORTS
US6870183B2 (en) * 2002-11-04 2005-03-22 Advanced Micro Devices, Inc. Stacked organic memory devices and methods of operating and fabricating
WO2004042837A2 (en) 2002-11-05 2004-05-21 Siemens Aktiengesellschaft Organic electronic component with high-resolution structuring and method for the production thereof
WO2004047144A2 (en) 2002-11-19 2004-06-03 Polyic Gmbh & Co.Kg Organic electronic component comprising a structured, semi-conductive functional layer and a method for producing said component
US20060035423A1 (en) 2002-11-19 2006-02-16 Walter Fix Organic electronic component comprising the same organic material for at least two functional layers
US7088145B2 (en) * 2002-12-23 2006-08-08 3M Innovative Properties Company AC powered logic circuitry
EP1434281A3 (en) 2002-12-26 2007-10-24 Konica Minolta Holdings, Inc. Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit
DE50313445D1 (en) * 2003-01-09 2011-03-10 Polyic Gmbh & Co Kg ICE DEVICE, AND USE THEREOF
US8665247B2 (en) 2003-05-30 2014-03-04 Global Oled Technology Llc Flexible display
US6950157B2 (en) 2003-06-05 2005-09-27 Eastman Kodak Company Reflective cholesteric liquid crystal display with complementary light-absorbing layer
DE10330063A1 (en) 2003-07-03 2005-02-03 Siemens Ag Organic layer structuring method for organic integrated circuit manufacture e.g. for manufacture of radio frequency identification tag, using structured anorganic layer as structuring mask
DE10330064B3 (en) 2003-07-03 2004-12-09 Siemens Ag Organic logic gate has load field effect transistor with potential-free gate electrode in series with switching field effect transistor
DE10335336B4 (en) * 2003-08-01 2011-06-16 Polyic Gmbh & Co. Kg Field effect devices and capacitors with electrode arrangement in a layer plane
DE10338277A1 (en) 2003-08-20 2005-03-17 Siemens Ag Organic capacitor with voltage controlled capacity
DE10340641A1 (en) * 2003-09-03 2005-04-07 Siemens Ag Production of a through-contact, especially an organic switch, for integrated plastic circuits comprises using a dispersion of a sulfonic acid derivative in an aqueous solvent mixture
JP4400327B2 (en) * 2003-09-11 2010-01-20 セイコーエプソン株式会社 Wiring formation method for tile-shaped element
US7122828B2 (en) * 2003-09-24 2006-10-17 Lucent Technologies, Inc. Semiconductor devices having regions of induced high and low conductivity, and methods of making the same
US7358530B2 (en) * 2003-12-12 2008-04-15 Palo Alto Research Center Incorporated Thin-film transistor array with ring geometry

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2006108514A2 *

Also Published As

Publication number Publication date
CN101160594B (en) 2014-03-05
TWI314369B (en) 2009-09-01
KR20080002833A (en) 2008-01-04
WO2006108514A3 (en) 2007-04-05
CN101160594A (en) 2008-04-09
JP4977126B2 (en) 2012-07-18
DE102005017655A1 (en) 2006-11-02
WO2006108514A2 (en) 2006-10-19
DE102005017655B4 (en) 2008-12-11
TW200707818A (en) 2007-02-16
US7812343B2 (en) 2010-10-12
KR101244124B1 (en) 2013-03-14
US20080203383A1 (en) 2008-08-28
JP2008536227A (en) 2008-09-04

Similar Documents

Publication Publication Date Title
DE69937485T2 (en) METHOD FOR PRODUCING TWO OR THREE-DIMENSIONAL ELECTRICALLY CONDUCTIVE OR SEMICONDUCTIVE STRUCTURES, A CLEARING METHOD THEREOF, AND A GENERATOR / MODULATOR OF AN ELECTRICAL FIELD FOR USE IN THE MANUFACTURE METHOD
EP2201585B1 (en) Electric multilayer component
WO2006061000A2 (en) Organic field effect transistor gate
DE102005017655B4 (en) Multilayer composite body with electronic function
DE102007046679B4 (en) RFID transponder
EP1310004A2 (en) Organic field-effect transistor (ofet), a production method therefor, an integrated circuit constructed from the same and their uses
EP1836655A1 (en) Organic rectifier
EP1656683B1 (en) Organic capacitor having a voltage-controlled capacitance
DE102011004543B4 (en) Resistor, circuit board and electrical or electronic device
DE102007023860B4 (en) Circuit module for constructing an electronic circuit designed as a multilayer body
DE102008026347A1 (en) Power-electronic arrangement, has electrically conducting regions arranged in edge region, where arrangement between one of conducting regions and base body comprises electrically conductive connection
DE102005009819A1 (en) electronics assembly
DE102004059396B3 (en) Polymer e.g. Polypyrrole, electronic circuit, has organic FET linked by conductor lying on level connecting gate electrode of one transistor with bottom electrode of another transistor, and including top and bottom gate structures
DE102017213759A1 (en) Printed circuit board element and method for producing a printed circuit board element
EP3189242A1 (en) Rolling bearing comprising an electric circuit, and method for producing an electric circuit for a rolling bearing
DE112014003271B4 (en) Organic light-emitting component
EP2068447B1 (en) Electronics component with organic switching elements
EP2092570B1 (en) Layered structure
DE102018114409A1 (en) Method for producing a switching device and switching device
EP2399292A2 (en) Organic electronic circuit
WO2003100718A2 (en) Data carrier
DE19738550A1 (en) Multiple layer conductor structure e.g. for electronic circuit

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20071024

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

DAX Request for extension of the european patent (deleted)
17Q First examination report despatched

Effective date: 20101015

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20141001