JPS6265472A - Mis type semiconductor element - Google Patents

Mis type semiconductor element

Info

Publication number
JPS6265472A
JPS6265472A JP20572585A JP20572585A JPS6265472A JP S6265472 A JPS6265472 A JP S6265472A JP 20572585 A JP20572585 A JP 20572585A JP 20572585 A JP20572585 A JP 20572585A JP S6265472 A JPS6265472 A JP S6265472A
Authority
JP
Japan
Prior art keywords
gaas substrate
type
semiconductor
element
mis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20572585A
Inventor
Minoru Azuma
Akira Miura
Koichi Mizushima
Nobuhiro Motoma
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP20572585A priority Critical patent/JPS6265472A/en
Publication of JPS6265472A publication Critical patent/JPS6265472A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/312Organic layers, e.g. photoresist
    • H01L21/3128Organic layers, e.g. photoresist by Langmuir-Blodgett techniques
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51Insulating materials associated therewith
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92Capacitors with potential-jump barrier or surface barrier
    • H01L29/94Metal-insulator-semiconductors, e.g. MOS

Abstract

PURPOSE:To reduce the influence of a boundary level upon element characteristics and facilitate P-type inversion by specifying the relation between the ionizing potential of a semiconductor and the electron affinity of an organic molecule in an MIS type semiconductor element. CONSTITUTION:A thin film containing organic molecules is employed as an insulator in an MIS type element. The insulator is composed of the thin film containing organic molecules which conform to the relation IPS<X1 + 0.3, wherein X1 (eV) denotes an electron affinity of the organic molecule and IPS (eV) denotes the ionizing potential of a semiconductor. For instance, first, an AuGe ohmic electrode 12 is formed on a backplane of an N-type GaAs substrate 11 doped with Si or the like and the surface of the substrate is cleaned. Then, about 20 layers of LB films 13 of mixture of 7,7,8,8-tetracyanoquinodimethane (TCNQ) and arachidic acid are applied to the GaAs substrate 11. After that, an Al electrode 14 is formed on the LB films 13 by evaporation. In the C-V characteristics of an MIS capacitor, the surface of the GaAs substrate 11 is inversed by a reverse bias of about 1.5 V. Incidentally, a leakage current is very small in the range of the reverse bias of 0-10 V.
JP20572585A 1985-09-18 1985-09-18 Mis type semiconductor element Pending JPS6265472A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20572585A JPS6265472A (en) 1985-09-18 1985-09-18 Mis type semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20572585A JPS6265472A (en) 1985-09-18 1985-09-18 Mis type semiconductor element

Publications (1)

Publication Number Publication Date
JPS6265472A true JPS6265472A (en) 1987-03-24

Family

ID=16511644

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20572585A Pending JPS6265472A (en) 1985-09-18 1985-09-18 Mis type semiconductor element

Country Status (1)

Country Link
JP (1) JPS6265472A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1376679A2 (en) * 2002-06-27 2004-01-02 Sumitomo Electric Industries, Ltd. Method and device for determining backgate characteristics
US7678857B2 (en) 2003-09-03 2010-03-16 Polyic Gmbh & Co. Kg Polymer mixtures for printed polymer electronic circuits
US7724550B2 (en) 2004-12-23 2010-05-25 Polyic Gmbh & Co. Kg Organic rectifier
US7786818B2 (en) 2004-12-10 2010-08-31 Polyic Gmbh & Co. Kg Electronic component comprising a modulator
US7812343B2 (en) 2005-04-15 2010-10-12 Polyic Gmbh & Co. Kg Multilayer composite body having an electronic function
US7843342B2 (en) 2005-03-01 2010-11-30 Polyic Gmbh & Co. Kg Organic clock generator
US7846838B2 (en) 2005-07-29 2010-12-07 Polyic Gmbh & Co. Kg Method for producing an electronic component
US7847695B2 (en) 2004-08-23 2010-12-07 Polyic Gmbh & Co. Kg External package capable of being radio-tagged
US7940159B2 (en) 2004-12-10 2011-05-10 Polyic Gmbh & Co. Kg Identification system
US7940340B2 (en) 2005-07-04 2011-05-10 Polyic Gmbh & Co. Kg Multilayer body with electrically controllable optically active systems of layers
US8315061B2 (en) 2005-09-16 2012-11-20 Polyic Gmbh & Co. Kg Electronic circuit with elongated strip layer and method for the manufacture of the same

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1376679A2 (en) * 2002-06-27 2004-01-02 Sumitomo Electric Industries, Ltd. Method and device for determining backgate characteristics
EP1376679A3 (en) * 2002-06-27 2010-03-10 Sumitomo Electric Industries, Ltd. Method and device for determining backgate characteristics
US7678857B2 (en) 2003-09-03 2010-03-16 Polyic Gmbh & Co. Kg Polymer mixtures for printed polymer electronic circuits
US7847695B2 (en) 2004-08-23 2010-12-07 Polyic Gmbh & Co. Kg External package capable of being radio-tagged
US7940159B2 (en) 2004-12-10 2011-05-10 Polyic Gmbh & Co. Kg Identification system
US7786818B2 (en) 2004-12-10 2010-08-31 Polyic Gmbh & Co. Kg Electronic component comprising a modulator
US7724550B2 (en) 2004-12-23 2010-05-25 Polyic Gmbh & Co. Kg Organic rectifier
US7843342B2 (en) 2005-03-01 2010-11-30 Polyic Gmbh & Co. Kg Organic clock generator
US7812343B2 (en) 2005-04-15 2010-10-12 Polyic Gmbh & Co. Kg Multilayer composite body having an electronic function
US7940340B2 (en) 2005-07-04 2011-05-10 Polyic Gmbh & Co. Kg Multilayer body with electrically controllable optically active systems of layers
US7846838B2 (en) 2005-07-29 2010-12-07 Polyic Gmbh & Co. Kg Method for producing an electronic component
US8315061B2 (en) 2005-09-16 2012-11-20 Polyic Gmbh & Co. Kg Electronic circuit with elongated strip layer and method for the manufacture of the same

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